海面流场的三种雷达体制成像仿真

监测海面流场是微波遥感重要应用之一,它对民用和军用领域都有非常重要的意义。微波传感器主要包括早期的真实孔径雷达、高分辨率合成孔径雷达和新兴的双站合成孔径雷达。文中提出一种对海面弱流场和波浪进行真实孔径雷达/合成孔径雷达/双站合成孔径雷达成像的仿真方法。该方法根据给定的海面流场数据、海况条件和雷达参数,考虑倾斜、流体动力和速度聚束调制作用,并利用海面微波散射模型和雷达回波信号模型生成雷达仿真图像,得到的雷达图像可为后续的海洋目标检测等算法提供仿真数据源。     

SAR的海洋遥感探测技术综述

从研究SAR的海洋遥感探测重要性和基本特点出发,概述了SAR系统的海洋遥感探测技术所涉及的主要研究内容,针对海洋环境要素分布的随机性和时变性,研究了海面微波散射特性和SAR的海面成像机理,给出了研究结果;分析了SAR系统主要特点,提出研究包括系统的宽测绘带特性和雷达的弱信号获取、海面精确成像算法和时空相关性等方面;同时探讨了海洋目标检测的技术途径,以满足SAR系统海洋观测应用的需要.     

SAR有源相干干扰和非相干干扰功率分析

SAR作为相干体制雷达,通过距离向和方位向的匹配处理可获得很高的空间分辨率及抗干扰性能,对SAR的有效干扰成为SAR信号处理中的一个难点。文章从干扰方程入手,开展了SAR有源相干干扰和非相干干扰对比研究,首次规范和详细推导了两种干扰下信噪比、杂噪比、信杂比、信干比、杂干比、信号干扰噪声比以及信号干扰杂波噪声比等功率比指标的理论表达式,分析了信号、干扰、杂波、噪声等功率因素对干扰效果的影响,研究了各功率指标及干扰效果随分辨率的变化关系。通过算例验证了理论分析的正确性,得到了一些有价值的结论。该研究对SAR干扰的实施和干扰功率的管理有重要的理论指导意义。     

星载合成孔径雷达遥感海洋风场波浪场

星载合成孔径雷达(SAR)能够全天时、全天候、高空间分辨率、宽刈幅观测海洋表面，是获取海面风场和波浪场信息的重要微波传感器。该文综述了多极化SAR海面风场遥感原理、地球物理模式函数，以及潜在应用(海气边界层现象、海上风能资源开发、台风监测与预警预报)，系统总结了传统星载SAR、新型干涉和极化SAR海浪遥感方法和技术。随着雷达卫星编队飞行技术的逐步成熟，未来海洋卫星组网将成为全球海洋和极地观测新趋势，合成孔径雷达海面风场和波浪场定量遥感将从科学研究向业务化海洋动力环境监测发展。      

顺轨干涉SAR海洋表面流场迭代反演算法

该文在分析传统顺轨干涉SAR表面流场速度分离方法不足的基础上,根据海面微波成像仿真模型建立了顺轨干涉SAR海洋表面流场迭代反演算法。利用该迭代反演算法对JPL AIRSAR获得的机载顺轨干涉SAR数据进行流场反演,并将反演流场与普林斯顿海洋模型(POM)的输出流场进行对比,两个流场具有很好的一致性,证实了该迭代反演算法的有效性。     

分布式机场异物检测雷达处理算法研究

微弱目标检测是机场异物监测系统面临的关键问题。小尺寸异物回波弱、信杂比低,传统异物检测雷达对其探测能力有限。本文从实测数据出发对机场环境地杂波展开分析,并由此提出杂波空间去相关约束条件。在此基础上,本文提出分布式机场异物检测雷达的设想,其核心是利用目标与道面杂波不同的空间相关特性,通过多站回波相参积累提高微弱目标信杂比,并由此改善机场异物检测雷达的探测能力。考虑到非理想正交信号带来的性能恶化问题以及结合机场跑道异物的目标特性,本文针对机场特定环境提出“乒乓”相参模型。相参参数估计问题是分布式体制的共性问题之一,本文针对传统峰值法在低信杂比条件下估计精度差的问题提出引导信息预估计方法,并且在“乒乓”相参模型中定量分析了时延参数估计误差与相位参数估计误差引起信杂比增益损失的边界条件。最后,本文基于实测杂波数据开展仿真实验,仿真结果表明,本文所提及的分布式机场异物检测信号处理方法可以有效提高弱型异物的信杂比。     

基于灰度相关性的SAR图像联合CFAR舰船检测算法

分析了中高分辨率SAR海洋图像的目标和海杂波特点,利用了SAR海洋图像中舰船目标的灰度相关性、形状特性以及舰船目标与背景杂波的信杂比特性,提出了一种基于灰度相关性的联合CFAR舰船检测算法。算法综合利用了舰船目标内部相邻像素间的灰度强相关性和舰船目标和海杂波的信杂比,建立了海杂波区域内相邻像素间灰度值的二维对数正态分布来实现联合CFAR检测。该算法能够改善斑点噪声和背景局部不均匀对检测带来的虚警,检测效果相比于传统检测算法更加优越。     

天线副瓣杂波对雷达信杂比的影响

为了分析强地物回波产生副瓣干扰,根据毫米波雷达制导系统的实际需求,提出了考虑天线副瓣杂波影响的精确的信杂比模型,并通过仿真计算得到了考虑副瓣影响的雷达的最佳搜索角。文中所提出的方法对精确预测雷达信杂比有重要的指导意义,同时对综合设计雷达中天线的性能指标也有重要意义,可提高整个雷达系统的性能。     

一种海洋涡旋SAR图像仿真方法

海洋涡旋对海洋热循环起着关键作用,是海洋科学研究中的一个重要分支。合成孔径雷达(Synthetic Aperture Radar, SAR)为海洋涡旋的观测和研究提供了大量的图像数据,但是涡旋在SAR成像时会受到各种海洋环境因素的影响,难以解译涡旋SAR图像特征。仿真SAR图像可以用于研究涡旋的特征,但是目前极少有关于涡旋SAR图像仿真方法的研究。为了更好地解译SAR图像中的涡旋特征,该文提出了一种涡旋SAR图像仿真方法。首先,基于流体力学中典型的Burgers-Rott涡旋模型,建立涡旋2维表面流场;然后,利用SAR海洋成像仿真模型,仿真给定涡旋2维流场、海面风场以及雷达系统参数下的涡旋SAR图像。该文针对气旋式涡旋与反气旋式涡旋进行了仿真实验,并建立了仿真涡旋SAR图像的相似度评价标准。实验结果表明,仿真的涡旋SAR图像与真实星载涡旋SAR图像能够较好地吻合,验证了方法的有效性。      

复杂杂波背景下海洋SAR图像中舰船目标的检测

针对卫星SAR图像海洋背景和舰船目标特点,文献[1]提出了基于小波多分辨率分析的卫星SAR海洋图像舰船目标检测的新方法。在此基础上,本文针对不同海情杂波服从不同概率密度分布的特点,讨论了复杂杂波背景下基于小波变换检测海洋SAR图像中舰船目标的性能,给出了不同海情下的检测性能,并与传统门限检测方法比较,给出了不同信杂比下虚警概率曲线。仿真结果表明,该方法实用、有效。     

基于光学滤波的水面弱纹理提取方法研究

水下潜体运动产生的内波反映到水表会形成一定的红外弱纹理信号,这使得利用红外遥感手段探测成为可能。但是这种纹理信号的对比度很弱,而且往往和振幅很强的背景杂波混在一起,给信号的提取造成很大困难。比较了已有水面弱纹理探测方法的优缺点,提出光学滤波的方法增强水面弱纹理信号的信杂比,使这种信号的提取更容易。基于非相干光学滤波的原理和特定信杂比评估弱纹理信号提取性能的方法,对不同特定频率信号的光学滤波方法采用信杂比进行分析和评估,然后在此基础上,针对特定频率的信号优化了相应的非相干光学传递函数,通过仿真和实验验证了该方法的可行性,同时表明优化的双孔径非相干光系统对弱纹理模型和信号具有较好的提取能力,该优化的系统可以得到7%以上的信杂比增强,再结合后续的数字对比度增强技术可以进一步有效提高对弱纹理信号的提取能力。     

Retrieval of ocean wave spectra and RAR MTF's fromdual-polarization SAR data

A method for the retrieval of the real aperture radar (RAR) modulation transfer function (MTF) and ocean wave spectra from dual-polarization (i.e., simultaneously acquired HH and VV polarizations) synthetic aperture radar (SAR) image data is described. The RAR MTF is estimated by applying empirical MTF estimation methodologies to inter-look cross spectra between various combinations of individual looks and available polarizations for a given radar frequency. The concept behind the nonlinear inversion is that any combination of like- and cross-polarization image spectra should return the same wave spectrum, in agreement with in situ and model wave spectra. This permits estimation of the RAR MTF on a case-by-case basis. The results are compared with theoretical treatments of the RAR MTF, which are shown to be inadequate for the range of conditions encountered in their data set. However, the theory and measurements fit well in describing the polarization dependence of the RAR MTF. The data set consists of SIR-C/X-SAR L-band and CCRS CV-580 C-band SAR data, in situ buoy measurements, and model data from field programs in Canadian waters in October and December 1994     

Polarimetric SAR image signatures of the ocean and Gulf Streamfeatures

Polarimetric signatures and related polarimetric properties of microwave ocean backscatter are analyzed for both the ambient ocean and for ocean features such as those associated with the Gulf Stream. Interpretation of the polarimetric signatures for the ocean surface is accomplished using a tilted-Bragg theoretical model. This model is used to calculate the EM fields, to second order, which is necessary to compute the full Stokes matrix and, ultimately, the polarimetric signature. The polarimetric studies lead to a technique for potentially improving the visibility of all azimuthally traveling waves in real-aperture radar (RAR) images and very long waves in synthetic-aperture radar (SAR) images. This technique utilizes linear polarization signatures to maximize the instrument sensitivity to azimuthally traveling waves. Wave tilts create a modulation of the cell polarization orientation which, in turn, modulates the backscatter. Critical to the success of this technique is that the ocean polarimetric signatures be sharply peaked (i.e., returns be highly polarized). The polarimetric contribution to the overall modulation transfer function is evaluated     

MUSIC算法提取海洋表面径向流方位的信号预处理

阐述从高频地波雷达海洋回波反演海洋表面流中,使用MUSIC算法提取径向流方位必须的信号预处理.海洋回波首先经线性调频中断连续波(FMICW)波形解调,分成不同距离元海洋回波.在各通道独立接收的海洋回波谱分析的基础上,针对每一距离元进行通道幅度的软件校准.接着从每一距离元合成的海洋回波多普勒功率谱中,分离包含海洋表面流信息的一阶谱区,再依据“局部噪声阈值扣除法”确定其中的可用信号.最终由MUSIC算法提取每一可用信号(其频偏对应径向流速)的多个存在方位,从而获得海洋表面径向流场的完整信息.本文阐述预处理使用的各种算法、效果及实测信号的部分处理结果.     

Effect of illumination on noise and some other characteristics of p-n junctions in InSb

Spectra of low-frequency (f = 20 Hz-20 kHz) noise in InSb p-n junctions are investigated at different voltage biases and under different illumination intensities at T = 77°K.

It is found that fluctuations of ohmic leakage current are the main source of the current noise in the dark. Fluctuations of conduction of the space charge region (SCR) are observed only at sufficiently large forward biases. Under illumination fluctuations of the photocurrent make the essential contribution to the excess noises. It is shown that these fluctuations are generated in SCR and their peculiarities depend not only on the value of voltage bias but also on the level of illumination L. A variety of other characteristics of p-n junction are found to be conditioned by illumination level as well: with increasing L the photoelectric efficiency of the diode decreases, and an increase takes place in the equivalent differential conductivity of SCR as well as in the forward current measured at constant voltage biases on the p-n junction. Such changes may be explained either by a decrease of the carrier life-time in SCR or by an increase of the width of SCR.

Arguments are adduced supporting the supposition that excess fluctuations of conductivity of SCR arise only in some regions of SCR which are characterized by the specific mechanism of current conduction.     

An analysis of space-charge-region recombination in HBT's

The importance of including recombination in the base side of the emitter-base space-charge-region (SCR) in the computation of the current gain in AlGaAs/GaAs HBT's is investigated. Recombination due to Shockley-Read-Hall, Auger and radiative processes is considered. The interaction of the base-side SCR recombination currents with the neutral-base current and the collector current, which occurs via their dependence on the quasi-Fermi level splitting (ΔE_fn) at the base-emitter junction, is not found to be a significant factor in the computation of ΔE_fn. However, it is confirmed that the quasi-Fermi level splitting, as calculated from a balancing of the thermionic/tunnel current with the neutral base and collector currents, must subsequently be included in the computation of the base-side SCR currents if the current gain is not to be severely underestimated. A discussion of why the ideality factor is ≈1 for the base-side SCR currents is given. Finally, simple analytical expressions for ΔE _fn and the SCR recombination currents are presented and should prove useful for HBT device- and circuit-simulation purposes     

Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-/spl mu/m CMOS process

The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or substrate of the SCR device, it can be quickly triggered into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR devices can be stacked in ESD protection circuits to avoid the transient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices can be reduced from 27.4 to 7.8 ns by the substrate-triggering technique. The substrate-triggered SCR device with a small active area of only 20 /spl mu/m /spl times/ 20 /spl mu/m can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-/spl mu/m CMOS process.     

Latchup-free ESD protection design with complementary substrate-triggered SCR devices

The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V/sub SS/ and pad-to-V/sub DD/ ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-/spl mu/m salicided CMOS process with the human body model (machine model) ESD level of /spl sim/7.25 kV (500 V) in a small layout area.     

Space-charge region recombination in heterojunction bipolartransistors

A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is derived. It is shown that if a spike is present in one of the bands at the heterojunction interface, the SCR recombination current becomes interrelated with the collector current. A previously proposed charge control model for the HBT is modified to include the SCR recombination current. The model is used to study SCR recombination characteristics in HBTs