Large intrinsic energy bandgaps in annealed nanotube-derived graphene nanoribbons

The usefulness of graphene for electronics has been limited because it does not have an energy bandgap. Although graphene nanoribbons have non-zero bandgaps, lithographic fabrication methods introduce defects that decouple the bandgap from electronic properties, compromising performance. Here we report direct measurements of a large intrinsic energy bandgap of approximately 50 meV in nanoribbons (width, approximately 100 nm) fabricated by high-temperature hydrogen-annealing of unzipped carbon nanotubes. The thermal energy required to promote a charge to the conduction band (the activation energy) is measured to be seven times greater than in lithographically defined nanoribbons, and is close to the width of the voltage range over which differential conductance is zero (the transport gap). This similarity suggests that the activation energy is in fact the intrinsic energy bandgap. High-resolution transmission electron and Raman microscopy, in combination with an absence of hopping conductance and stochastic charging effects, suggest a low defect density.     

Electronic structure and stability of semiconducting graphene nanoribbons

We present a systematic density functional theory study of the electronic properties, optical spectra, and relative thermodynamic stability of semiconducting graphene nanoribbons. We consider ribbons with different edge nature including bare and hydrogen-terminated ribbons, several crystallographic orientations, and widths up to 3 nm. Our results can be extrapolated to wider ribbons providing a qualitative way of determining the electronic properties of ribbons with widths of practical significance. We predict that in order to produce materials with band gaps similar to Ge or InN, the width of the ribbons must be between 2 and 3 nm. If larger bang gap ribbons are needed (like Si, InP, or GaAs), their width must be reduced to 1-2 nm. According to the extrapolated inverse power law obtained in this work, armchair carbon nanoribbons of widths larger than 8 nm will present a maximum band gap of 0.3 eV, while for ribbons with a width of 80 nm the maximum possible band gap is 0.05 eV. For chiral nanoribbons the band gap oscillations rapidly vanish as a function of the chiral angle indicating that a careful design of their crystallographic nature is an essential ingredient for controlling their electronic properties. Optical excitations show important differences between ribbons with and without hydrogen termination and are found to be sensitive to the carbon nanoribbon width. This should provide a practical way of revealing information on their size and the nature of their edges.     

Thermal, structural, optical, and dielectric properties of (100 - x)Li2B4O7 - x(BaO-Bi2O3-Nb2O5) glasses and glass-nanocrystal composites

Transparent glasses in the system (100 - x)Li2B4O7 - x(BaO-Bi2O3-Nb2O5) (x = 10, 20, and 30) were fabricated via the conventional melt-quenching technique. The amorphous and glassy characteristics of the as-quenched samples were established by the differential thermal analyses (DTA) and X-ray powder diffraction (XRD) studies. Glass-nanocrystal composites (GNCs) i.e., the glasses embedded with BaBi2Nb2O9 (BBN) nanocrystals (10-50 nm) were produced by heat-treating the as-quenched glasses at temperatures higher than 500 degrees C. Perovskite BBN phase formation through an intermediate fluorite-like phase in the glass matrix was confirmed via XRD and transmission electron microscopic (TEM) studies. The optical transmission properties of these GNCs were found to have a strong compositional (BBN content) dependence. The refractive index (n = 1.90) and optical polarizability (alphao = 15.3 x 10(-24) cm3) of the GNC (x = 30) were larger than those of as-quenched glasses. The temperature dependent dielectric constant (epsilonr) and loss factor (D) for the glasses and GNCs were determined in the 100-40 MHz frequency range. The epsilonr was found to increase with increase in heat-treatment temperatures, while the loss of the glass-nanocomposites was less than that of as-quenched glasses. The sample heat-treated at 620 degrees C/1 h (x = 30) exhibited relaxor behavior associated with a dielectric anomaly in the 150-250 degrees C temperature range. The frequency dependence of the dielectric maximum temperature was found to obey the Vogel-Fulcher relation (Ea = 0.32 eV and Tf = 201 K).     

Construction of multilayers of bare and Pd modified gold nanoclusters and their electrocatalytic properties for oxygen reduction

Abstract

Multilayers of gold nanoclusters (GNCs) coated with a thin Pd layer were constructed using GNCs modified with self-assembled monolayers (SAMs) of mercaptoundecanoic acid and a polyallylamine hydrochloride (PAH) multilayer assembly, which has been reported to act as a three-dimensional electrode. SAMs were removed from GNCs by electrochemical anodic decomposition and then a small amount of Pd was electrochemically deposited on the GNCs. The kinetics of the oxygen reduction reaction (ORR) on the Pd modified GNC/PAH multilayer assembly was studied using a rotating disk electrode, and a significant increase in the ORR rate was observed after Pd deposition. Electrocatalytic activities in alkaline and acidic solutions were compared both for the GNC multilayer electrode and Pd modified GNC electrode.     

First-principles study of heat transport properties of graphene nanoribbons

We use density-functional theory and the nonequilibrium Green's function method as well as phonon dispersion calculations to study the thermal conductance of graphene nanoribbons with armchair and zigzag edges, with and without hydrogen passivation. We find that low-frequency phonon bands of the zigzag ribbons are more dispersive than those of the armchair ribbons and that this difference accounts for the anisotropy in the thermal conductance of graphene nanoribbons. Comparing our results with data on large-area graphene, edge effects are shown to contribute to thermal conductance, enhance the anisotropy in thermal conductance of graphene nanoribbons, and increase thermal conductance per unit width. The edges with and without hydrogen passivation modify the atomic structure and ultimately influence the phonon thermal transport differently for the two ribbon types.     

Fabrication of sub-micrometer graphene ribbon using electrospun nanofiber

Here we demonstrate a simple and effective method to fabricate graphene ribbon with a sub-micrometer width down to 260 nm by using an electrospun polymer nanofiber as a physical etch mask. Our method involves electrospinning polystyrene nanofiber onto chemical vapor deposition-grown graphene film, followed the oxygen plasma etching to remove the exposed graphene without disturbing the underlying graphene. This work shows that the width of the resulting graphene ribbons can be engineered by controlling the nanofiber size and etch conditions. Based on this graphene ribbon, we fabricated a graphene-field effect transistor with a bottom-gated geometry, which shows an ambipolar characteristic with a hole and electron mobility of 1636 and 134 cm²/(V s), respectively. Our approach here may allow the fabrication of sub-micrometer graphene ribbon for graphene-based electronics.     

Semiconducting two-dimensional graphene nanoconstriction arrays

The fabrication and characterization of two-dimensional nanoconstriction arrays consisting of sub-20-nm graphene constrictions and interconnecting graphene islands are reported. The arrays are fabricated in a scalable top-down fashion using self-assembled close-packed polystyrene nanospheres as lithographic templates and characterized using electron microscopy, Raman spectroscopy, and charge transport measurements. At room temperature, the arrays behave as semiconductors with a field-effect conductance modulation of up to 450 and charge mobilities of ~1 cm(2) V(-1) s(-1) . The effective bandgap of the arrays scales inversely with the nanoconstriction width, indicating that its magnitude is determined by quantum confinement in the constrictions. At low temperatures, the arrays act as semiconductors, with increasing ON/OFF conductance modulation up to ～1000, and simultaneously act as 2D arrays of coupled Coulomb islands affected by single-electron charging events. The high conductance modulation of these nanopatterned graphene materials, combined with the scalability of the patterning approach is expected to impact thin film, flexible, and transparent semiconductor electronics.     

Rheology of polyaniline-dinonylnaphthalene disulfonic acid (DNNDSA) montmorillonite clay nanocomposites in the sol state: shear thinning versus pseudo-solid behavior

The melt rheology of polyaniline (PANI)-dinonylnaphthalenedisulfonic acid (DNNDSA) gel nanocomposites (GNCs) with organically modified (modified with cetyl trimethylammonium bromide)-montmorillonite (om-MMT) clay has been studied for three different clay concentrations at the temperature range 120-160 degrees C. Field emission scanning electron microscopy (FE-SEM), wide angle X-ray scattering (WAXS), differential scanning calorimetry (DSC) and dc-conductivity data (approximately 10(-3) S/cm) indicate that the PANI-DNNDSA melt is in sol state and it is not de-doped at that condition. The WAXS data indicate that in GNC-1 sol clay tactoids are in exfoliated state but in the other sols they are in intercalated state. The zero shear viscosity (eta0), storage modulus (G') and loss modulus (G") increase than that of pure gel in the GNCs. The pure sol and the sols of gel nanocomposites (GNCs) exhibit Newtonian behavior for low shear rate (< 6 x 10(-3) s(-1)) and power law variation for the higher shear rate region. The characteristic time (A) increase with increasing clay concentration and the power law index (n) decreases with increase in clay concentration in the GNCs indicating increased shear thinning for the clay addition. Thus the sols of om-clay nanocomposites of PANI-DNNDSA system are easily processible. The storage modulus (G') of GNC sols are higher than that of pure PANI-DNNDSA sol, GNC1 sol shows a maximum of 733% increase in storage modulus and the percent increase decreases with increase in temperature. Exfoliated nature of clay tactoids has been attributed for the above dramatic increase of G'. The PANI-DNNDSA sol nanocomposites behave as a pseudo-solid at higher frequency where G' and loss modulus (G") show a crossover point in the frequency sweep experiment at a fixed temperature. The crossover frequency decreases with increase in clay concentration and it increases with increase in temperature for GNC sols. The pseudo-solid behavior has been explained from jamming or network formation of clay tactoids under shear. A probable explanation of the two apparently contradictory phenomena of shear thinning versus pseudo-solid behavior of the nanocomposite sols is discussed.     

Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors

We have fabricated suspended few-layer (1-3 layers) graphene nanoribbon field-effect transistors from unzipped multi-wall carbon nanotubes. Electrical transport measurements show that current annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates a narrow constriction in the ribbon, leading to the formation of a large bandgap and subsequent high on/off ratio (which can exceed 10(4)). Such fabricated devices are thermally and mechanically stable: repeated thermal cycling has little effect on their electrical properties. This work shows for the first time that ambipolar field-effect characteristics and high on/off ratios at room temperature can be achieved in relatively wide graphene nanoribbons (15-50 nm) by controlled current annealing.     

Understanding Interlayer Contact Conductance in Twisted Bilayer Graphene

Bilayer or few‐layer 2D materials showing novel electrical properties in electronic device applications have aroused increasing interest in recent years. Obtaining a comprehensive understanding of interlayer contact conductance still remains a challenge, but is significant for improving the performance of bilayer or few‐layer 2D electronic devices. Here, conductive atomic force microscope (C‐AFM) experiments are reported to explore the interlayer contact conductance between bilayer graphene (BLG) with various twisted stacking structures fabricated by the chemical vapor deposition (CVD) method. The current maps show that the interlayer contact conductance between BLG strongly depends on the twist angle. The interlayer contact conductance of 0° AB‐stacking bilayer graphene (AB‐BLG) is ≈4 times as large as that of 30° twisted bilayer graphene (t‐BLG), which indicates that the twist angle–dependent interlayer contact conductance originates from the coupling–decoupling transitions. Moreover, the moiré superlattice‐level current images of t‐BLG show modulations of local interlayer contact conductance. Density functional theory calculations together with a theoretical model reproduce the C‐AFM current map and show that the modulation is mainly attributed to the overall contribution of local interfacial carrier density and tunneling barrier.     

Printing of sub-20 nm wide graphene ribbon arrays using nanoimprinted graphite stamps and electrostatic force assisted bonding

Nano-graphene ribbons are promising in many electronic applications, as their bandgaps can be opened by reducing the widths, e.g. below 20 nm. However, a high-throughput method to pattern large-area nano-graphene features is still not available. Here we report a fabrication method of sub-20 nm ribbons on graphite stamps by nanoimprint lithography and a transfer-printing of the graphene ribbons to a Si wafer using electrostatic force assisted bonding. These methods provide a path for fast and high-throughput nano-graphene device production.     

Nanoparticles embedded into glass matrices: glass nanocomposites

Research on glass nanocomposites (GNCs) has been very active in the past decades. GNCs have attracted — and still do — great interest in the fields of optoelectronics, photonics, sensing, electrochemistry, catalysis, biomedicine, and art. In this review, the potential applications of GNCs in these fields are briefly described to show the reader the possibilities of these materials. The most important synthesis methods of GNCs (melt-quenching, sol-gel, ion implantation, ion-exchange, staining process, spark plasma sintering, radio frequency sputtering, spray pyrolysis, and chemical vapor deposition techniques) are extensively explained. The major aim of this review is to systematize our knowledge about the synthesis of GNCs and to explore the mechanisms of formation and growth of NPs within glass matrices. The size-controlled preparation of NPs within glass matrices, which remains a challenge, is essential for advanced applications. Therefore, a thorough understanding of GNC synthesis techniques is expected to facilitate the preparation of innovative GNCs.     

Bulk production of a new form of sp(2) carbon: crystalline graphene nanoribbons

We report the use of chemical vapor deposition (CVD) for the bulk production (grams per day) of long, thin, and highly crystalline graphene ribbons (<20-30 microm in length) exhibiting widths of 20-300 nm and small thicknesses (2-40 layers). These layers usually exhibit perfect ABAB... stacking as in graphite crystals. The structure of the ribbons has been carefully characterized by several techniques and the electronic transport and gas adsorption properties have been measured. With this material available to researchers, it should be possible to develop new applications and physicochemical phenomena associated with layered graphene.     

Nitrogen‐Doped Graphene‐Buffered Mn2O3 Nanocomposite Anodes for Fast Charging and High Discharge Capacity Lithium‐Ion Batteries

Mn₂O₃ is a promising anode material for lithium‐ion batteries (LIBs) because of its high theoretical capacity and low discharge potential. However, low electronic conductivity and capacity fading limits its practical application. In this work, Mn₂O₃ with 1D nanowire geometry is synthesized in neutral aqueous solutions by a facile and effective hydrothermal strategy for the first time, and then Mn₂O₃ nanoparticle and nitrogen‐doped reduced graphene oxide (N‐rGO) are composited with Mn₂O₃ nanowires (Mn₂O₃‐GNCs) to enhance its volume utilization and conductivity. When used as an anode material for LIBs, the Mn₂O₃‐GNCs exhibit high reversible capacity (1350 mAh g^?1), stable cycling stability, and good rate capability. Surprisingly, the Mn₂O₃‐GNC electrodes can also show fast charging capability; even after 200 cycles (charge: 10 A g^?1; discharge: 0.5 A g^?1), its discharge capacity can also keep at ≈500 mAh g^?1. In addition, the Mn₂O₃‐GNCs also have considerable full cell and supercapacitor performance. The excellent electrochemical performances can be ascribed to the N‐rGO network structure and 1D nanowire structure, which can ensure fast ion and electron transportation.     

Observing the evolution of graphene layers at high current density

Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope (TEM). The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be ~1.6 × 10⁹ A·cm^–2, which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening (OR), indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path.

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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on SiO(2) back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used SiO(2) back gate, which is usually about 300 nm thick. In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.     

Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography

The practical realization of nanoscale electronics faces two major challenges: the precise engineering of the building blocks and their assembly into functional circuits. In spite of the exceptional electronic properties of carbon nanotubes, only basic demonstration devices have been realized that require time-consuming processes. This is mainly due to a lack of selective growth and reliable assembly processes for nanotubes. However, graphene offers an attractive alternative. Here we report the patterning of graphene nanoribbons and bent junctions with nanometre-precision, well-defined widths and predetermined crystallographic orientations, allowing us to fully engineer their electronic structure using scanning tunnelling microscope lithography. The atomic structure and electronic properties of the ribbons have been investigated by scanning tunnelling microscopy and tunnelling spectroscopy measurements. Opening of confinement gaps up to 0.5 eV, enabling room-temperature operation of graphene nanoribbon-based devices, is reported. This method avoids the difficulties of assembling nanoscale components and may prove useful in the realization of complete integrated circuits, operating as room-temperature ballistic electronic devices.     

Ballistic transport of graphene pnp junctions with embedded local gates

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.     

Plasmonic Graphene Transparent Conductors

Plasmonic graphene is fabricated using thermally assisted self‐assembly of silver nanoparticles on graphene. The localized surface‐plasmonic effect is demonstrated with the resonance frequency shifting from 446 to 495 nm when the lateral dimension of the Ag nanoparticles increases from about 50 to 150 nm. Finite‐difference time‐domain simulations are employed to confirm the experimentally observed light‐scattering enhancement in the solar spectrum in plasmonic graphene and the decrease of both the plasmonic resonance frequency and amplitude with increasing graphene thickness. In addition, plasmonic graphene shows much‐improved electrical conductance by a factor of 2–4 as compared to the original graphene, making the plasmonic graphene a promising advanced transparent conductor with enhanced light scattering for thin‐film optoelectronic devices.     

High-on/off-ratio graphene nanoconstriction field-effect transistor

A method is reported to pattern monolayer graphene nanoconstriction field-effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback-controlled electromigration (FCE) to form a constriction in a gold etch mask that is first patterned using conventional lithographic techniques. The use of FCE allows the etch mask to be patterned on size scales below the limit of conventional nanolithography. The opening of a confinement-induced energy gap is observed as the NCFET width is reduced, as evidenced by a sharp increase in the NCFET on/off ratio. The on/off ratios obtained with this procedure can be larger than 1000 at room temperature for the narrowest devices; this is the first report of such large room-temperature on/off ratios for patterned graphene FETs.