共查询到20条相似文献,搜索用时 15 毫秒
1.
Grain growth in a high-purity ZnO and for the same ZnO with Bi2 O3 additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G n — G n 0 = K 0 t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn2+ lattice diffusion mechanism. Additions of Bi2 O3 to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi2 O3 content. The preexponential term K 0 was also independent of Bi2 O3 content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi2 O3 ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi2 O3 -rich liquid phase. 相似文献
2.
Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi2 O3 ceramic was investigated for A12 O3 additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI2 O3 reacted with the ZnO to form ZnAl2 O4 spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl2 O4 spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl2 O4 spinel particles, most probably controlled by the diffusion of O2- in the ZnAl2 O4 spinel structure. 相似文献
3.
Grain growth in a high-purity ZnO with systematic additions of Sb2 O3 from 0.29 to 2.38 wt% was studied for sintering in air from 1106° to 1400°C. The results are discussed and compared with previous studies of pure ZnO and ZnO with Bi2 O3 additions in terms of the kinetic grain growth expression: Gn – Gn 0 = K 0 t exp(— Q/RT ). Additions of Sb2 O3 inhibited the grain growth of ZnO and increased the grain growth exponent ( n -value) to 6 from 3 for pure ZnO and 5 for the ZnO—Bi2 O3 ceramic. The apparent activation energy for the grain growth of ZnO also increased to about 600 kJ/mol from 220 kJ/mol for pure ZnO and 150 kJ/mol for the ZnO—Bi2 O3 ceramics. Both the grain growth exponent and the activation energy were independent of the Sb2 O3 content. Particles of the Zn7 Sb2 O12 spinel were observed on the grain boundaries and at the grain triple point junctions. It was also observed that the Sb2 O3 additions caused twin formation in each ZnO grain. It is concluded that both the Zn7 Sb2 O12 particles and the twins are responsible for the ZnO grain growth inhibition by Sb2 O3 . 相似文献
4.
Zinc oxide (ZnO) nanoparticles coated with 1–5 wt% Bi2 O3 were prepared by precipitating a Bi(NO3 )3 solution onto a ZnO precursor. Transmission electron microscopy showed that a homogeneous Bi2 O3 layer coated the surface of the ZnO nanoparticles and that the ZnO particle size was ∼30–50 nm. Scanning electron microscopy showed that ZnO grains sintered at 1150°C were homogeneous in size and surrounded by a uniform Bi2 O3 layer. When the ZnO grains were surrounded fully by Bi2 O3 liquid phases, further increases in the ZnO grain size were not affected by the Bi2 O3 content. This predesigned ZnO nanoparticle structure was shown to promote homogeneous ZnO grains with perfect crystal growth. 相似文献
5.
Jung-Hae Choi Nong-Moon Hwang Doh-Yeon Kim 《Journal of the American Ceramic Society》2001,84(6):1398-1400
Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi2 O3 (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi2 O3 -doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi2 O3 -rich phase existed at the boundaries in the Bi2 O3 -doped specimens. The pore separation in 99.95ZnO·0.05Bi2 O3 specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary. 相似文献
6.
A type of new low sintering temperature ceramic, Li2 TiO3 ceramic, has been found. Although it is difficult for the Li2 TiO3 compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li2 O, dense Li2 TiO3 ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B2 O3 frit. The sintering behavior and microwave dielectric properties of Li2 TiO3 ceramics with less ZnO–B2 O3 frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B2 O3 frit can lower the sintering temperature of the Li2 TiO3 ceramics, but it does not apparently degrade the microwave dielectric properties of the Li2 TiO3 ceramics. Typically, the good microwave dielectric properties of ɛr =23.06, Q × f =32 275 GHz, τf = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B2 O3 frit-doped Li2 TiO3 ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li2 TiO3 ceramic system may be a promising candidate for low-temperature cofired ceramics applications. 相似文献
7.
Nina Daneu Aleksander Renik Slavko Bernik Drago Kolar 《Journal of the American Ceramic Society》2000,83(12):3165-3171
The effects of adding small quantities of SnO2 to the basic ZnO–Bi2 O3 varistor composition were studied in terms of phase reactions, microstructural development, and the formation of inversion boundaries. Scanning and transmission electron microscopy studies showed that the inversion boundaries, triggered by the addition of SnO2 , cause anisotropic grain growth in the early stages of sintering. ZnO grains that include inversion boundaries grow exaggeratedly, at the expense of normal grains, until they dominate the microstructure. Higher additions of SnO2 lead to an increase in number of grains with inversion boundaries and to a more fine-grained microstructure. The increasing amount of secondary phases is also related to a higher level of SnO2 addition; however, the influence of these phases on ZnO grain growth is subordinate to the role of inversion boundaries. 相似文献
8.
Miha Drofenik rej Znidarsic Darko Makovec 《Journal of the American Ceramic Society》1998,81(11):2841-2848
Additions of Bi2 O3 were used to promote grain growth and to increase magnetic permeability during sintering of MnZn ferrites. The results showed that small additions of Bi2 O3 of <0.05 wt% remarkably increase the permeability of MnZn ferrites. On the other hand, addition of 0.05 wt% Bi2 O3 induced the formation of a microstructure composed of giant grains with trapped pores embedded in a normal microstructure. The permeability of these samples showed a pronounced secondary maximum in permeability. At still higher Bi2 O3 concentrations, above 0.2 wt%, the grain growth was retarded and a normal microstructure appeared; however, the magnetic permeability was strongly reduced. 相似文献
9.
Rajiv Kudesia Anna E. McHale Robert L. Snyder 《Journal of the American Ceramic Society》1994,77(12):3215-3220
Dielectric ceramics of Zr0.8 Sn0.2 TiO4 containing La2 O3 and ZnO as sintering aids were prepared and investigated for microstructure and microwave dielectric properties. Low-level doping with La2 O3 and ZnO (up to 0.30 wt%) is good for densification and dielectric properties. These additives do not affect the dielectric constant and the temperature coefficient. Dielectric losses increase significantly at additive levels higher than 0.15 wt%. The combined additives La2 O3 and ZnO act as grain growth enhancers. With 0.15 wt% additives, a ceramic having a dielectric constant, a quality factor, and a temperature coefficient of frequency at 4.2 GHz of 37.6, 12 800, and –2.9 ppm/°C, respectively, was obtained. The quality factor was considerably improved by prolonged sintering. 相似文献
10.
Hongliang Du Daijun Liu Fusheng Tang Dongmei Zhu Wancheng Zhou Shaobo Qu 《Journal of the American Ceramic Society》2007,90(9):2824-2829
Lead-free piezoelectric (K0.5 Na0.5 )NbO3 – x wt% Bi2 O3 ceramics have been synthesized by an ordinary sintering technique. The addition of Bi2 O3 increases the melting point of the system and improves the sintering temperature of (K0.5 Na0.5 )NbO3 ceramics. All samples show a pure perovskite phase with a typical orthorhombic symmetry when the Bi2 O3 content <0.7 wt%. The phase transition temperature of orthorhombic–tetragonal ( T O − T ) and tetragonal–cubic ( T C ) slightly decreased when a small amount of Bi2 O3 was added. The remnant polarization P r increased and the coercive field E c decreased with increasing addition of Bi2 O3 . The piezoelectric properties of (K0.5 Na0.5 )NbO3 ceramics increased when a small amount of Bi2 O3 was added. The optimum piezoelectric properties are d 33 =140 pC/N, k p =0.46, Q m =167, and T C =410°C for (K0.5 Na0.5 )NbO3 –0.5 wt% Bi2 O3 ceramics. 相似文献
11.
Hyo Tae Kim Myoung-Hwa Nam Jong-Hee Kim Sahn Nahm 《International Journal of Applied Ceramic Technology》2009,6(5):587-592
Dolomite-type borate ceramics consisting of CaZrB2 O6 were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi2 O3 –CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB2 O6 ceramics with 3 wt% Bi2 O3 –CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛr =10.55, Q × f =87,350 GHz, and τf =+2 ppm/°C. The chemical resistance test result showed that both CaZrB2 O6 - and Bi2 O3 –CuO-added CaZrB2 O6 ceramics were durable in basic solution but were degraded in acid solution. 相似文献
12.
Jin-Seong Kim Ngoc-Huan Nguyen Myung-Eun Song Jong-Bong Lim Dong-Soo Paik Sahn Nahm Jong-Hoo Paik Byung-Hyun Choi Soon-Jae Yu 《International Journal of Applied Ceramic Technology》2009,6(5):581-586
Bi2 O3 was added to a nominal composition of Zn1.8 SiO3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi2 O3 content was <8.0 mol%, a porous microstructure with Bi4 (SiO4 )3 and SiO2 second phases was developed in the specimen sintered at 885°C. However, when the Bi2 O3 content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛr =7.6, and τf =−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi2 O3 sintered at 885°C for 2 h. 相似文献
13.
Michel W. Barsoum Alexander Elkind Fadel A. Selim 《Journal of the American Ceramic Society》1996,79(4):962-966
Diffusion of molten Bi2 O3 into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi2 O3 powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi2 O3 layer between the grains. Separate wetting experiments have shown that the penetration of Bi2 O3 into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed. 相似文献
14.
C. C. Khaw C. K. Lee Z. Zainal G. C. Miles A. R. West 《Journal of the American Ceramic Society》2007,90(9):2900-2904
The subsolidus phase diagram of the system Bi2 O3 –ZnO–Ta2 O5 in the region of the cubic pyrochlore phase has been determined at 1050°C. This phase forms a solid solution area that includes the ideal composition P, Bi3 Zn2 Ta3 O14 ; possible solid solution mechanisms are proposed, supported by density measurements of Zn-deficient solid solutions. The general formula of the solid solutions is Bi3+ y Zn2− x Ta3− y O14− x − y , based on the creation of Zn2+ , O2− vacancies in Zn-deficient compositions and a variable Bi/Ta ratio. 相似文献
15.
Solid-state reactions of equimolar mixtures of Bi2 O3 and Fe2 O3 from 625° to 830°C and their kinetics were investigated. The reaction rates were determined from the integrated X-ray diffraction intensities of the strongest peaks of the reactants and products. The activation energy for the formation of BiFeO3 was 96.6±9.0 kcal/mol; that for a second-phase compound, Bi2 Fe4 O9 , which formed above 675°C, was 99.4±9.0 kcal/mol. Specific rate constants for these simultaneous reactions were obtained. The preparation of single-phase BiFeO3 from the stoichiometric mixture of Bi2 O3 and Fe2 O3 is discussed. 相似文献
16.
Takahiro Takada Sea Fue Wang Shoko Yoshikawa Sei-Joo Jang Robert E. Newnham 《Journal of the American Ceramic Society》1994,77(7):1909-1916
The effect of glass addition on the properties of BaO–TiO2 -WO3 microwave dielectric material N-35, which has Q = 5900 and K = 35 at 7.2 GHz for samples sintered at 1360°C, was investigated. Several glasses including B2 O3 , SiO2 , 5ZnO–2B2 O3 , and nine other commercial glasses were selected for this study. Among these glasses, one with a 5 wt% addition of B2 O3 to N-35, when sintered at 1200°C, had the best dielectric properties: Q = 8300 and K = 34 at 8.5 GHz. Both Q and K increased with firing temperature as well as with density. The Q of N-35, when sintered with a ZnO–B2 O3 glass system, showed a sudden drop in the sintering temperature to about 1000°C. The results of XRD, thermal analysis, and scanning electron microscopy indicated that the chemical reaction between the dielectric ceramics and glass had a greater effect on Q than on the density. The effects of the glass content and the mixing process on the densification and microwave dielectric properties are also presented. Ball milling improved the densification and dielectric properties of the N-35 sintered with ZnO–B2 O3 . 相似文献
17.
Two cubic pyrochlore phases exist in the system ZnO–Bi2 O3 –Sb2 O5 . Neither has the supposed "ideal" stoichiometry, Zn2 Bi3 Sb3 O14 . One, P 1 , is a solid solution phase, Zn2+ x Bi2.96−( x − y ) Sb3.04− y O14.04+δ where 0< x <0.13(1), 0< y <0.017(2) and a =10.4285(9)−10.451(1) Å. The other, P 2 , is a line phase, Zn2 Bi3.08 Sb2.92 O13.92 with a =10.462(2) Å. Subsolidus phase relations at 950°C involving phases P 1 and P 2 in the ZnO–Bi2 O3 –Sb2 O5 phase diagram have been determined. 相似文献
18.
YiHua Sun WeiHao Xiong ChenHui Li Lu Yuan 《Journal of the American Ceramic Society》2009,92(9):2168-2171
The rheological behavior of concentrated ZnO–Al2 O3 aqueous suspensions has been studied in order to obtain an ultrahigh-density ZnO–Al2 O3 composite ceramic target by slip casting. The influence of the mass fraction of polyacrylic acid (PAA) on the fluidity of slurries and the density and strength of the green and sintered bodies was investigated. The slurries exhibited a near-Newtonian flow behavior and had a lower viscosity with 0.3 wt% PAA. The excess of PAA enhanced the green strength and the density and strength of the sintered bodies. An ultrahigh density sintered body (>99.7% theoretical density) could be obtained after pressureless sintering at 1400°C. The Al species were well distributed in the sintered bodies, which showed a homogeneous, defect-free microstructure with no abnormal grain growth. 相似文献
19.
Phase relations in the system Bi2 O3 -WO3 were studied from 500° to 1100°C. Four intermediate phases, 7Bi2 O3 · WO3 , 7Bi2 O3 · 2WO3 , Bi2 O3 · WO3 , and Bi2 O3 · 2WO3 , were found. The 7B2 O · WO3 phase is tetragonal with a 0 = 5.52 Å and c 0 = 17.39 Å and transforms to the fcc structure at 784°C; 7Bi2 O3 · 2WO3 has the fcc structure and forms an extensive range of solid solutions in the system. Both Bi2 O3 · WO3 and Bi2 O3 · 2WO3 are orthorhombic with (in Å) a 0 = 5.45, b 0 =5.46, c 0 = 16.42 and a 0 = 5.42, b 0 = 5.41, c 0 = 23.7, respectively. Two eutectic points and one peritectic exist in the system at, respectively, 905°± 3°C and 64 mol% WO3 , 907°± 3°C and 70 mol% WO3 , and 965°± 5°C and 10 mol% WO3 . 相似文献
20.
Hyuk-Joon Youn Tomohiro Sogabe Clive A. Randall Tom R. Shrout Michael T. Lanagan 《Journal of the American Ceramic Society》2001,84(11):2557-2562
Dielectric properties and phase formation of Bi-based pyrochlore ceramics were evaluated for the Bi2 O3 –ZnO–Ta2 O5 system. The compositional range r Bi2 (Zn1/3 Ta2/3 )2 O7 · (1− r )(Bi3/2 Zn1/2 )(Zn1/2 Ta3/2 )O7 (0 ≤ r ≤ 1) in Bi2 O3 –ZnO–Ta2 O5 was investigated to determine the relative solubility of BZT cubic (α-BZT, r = 0) and the pseudo-orthorhombic (β-BZT, r = 1) end members. It was found that extrinsic factors, such as kinetically limited phase formation and bismuth loss, contribute to apparent phase boundaries in addition to thermodynamic stability of each phase. Considering this, the locations of true phase boundaries were r < 0.30 and r ≥ 0.74 for α and β phases, respectively. Dielectric constants between 58 and 80 and low dielectric loss (tan δ < 0.003) were measured for the complete compositional range. The temperature coefficient of capacitance was controlled by composition, which was found to be <30 ppm/°C at the edge of β-phase solid solution. In addition to the excellent dielectric properties these materials can be sintered at low temperatures, which make Bi-based pyrochlores promising candidates for high-frequency electronic applications. 相似文献