Precursor Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with 14.78% Efficiency

The optoelectronic properties of perovskite films are closely related to the film quality, so depositing dense, uniform, and stable perovskite films is crucial for fabricating high‐performance perovskite solar cells (PSCs). CsPbI₂Br perovskite, prized for its superb stability toward light soaking and thermal aging, has received a great deal of attention recently. However, the air instability and poor performance of CsPbI₂Br PSCs are hindering its further progress. Here, an approach is reported for depositing high‐quality CsPbI₂Br films via the Lewis base adducts PbI₂(DMSO) and PbBr₂(DMSO) as precursors to slow the crystallization of the perovskite film. This process produces CsPbI₂Br films with large‐scale crystalline grains, flat surfaces, low defects, and long carrier lifetimes. More interestingly, PbI₂(DMSO) and PbBr₂(DMSO) adducts could significantly improve the stability of CsPbI₂Br films in air. Using films prepared by this technique, a power conversion efficiency (PCE) of 14.78% is obtained in CsPbI₂Br PSCs, which is the highest PCE value reported for CsPbI₂Br‐based PSCs to date. In addition, the PSCs based on DMSO adducts show an extended operational lifetime in air. These excellent performances indicate that preparing high‐quality inorganic perovskite films by using DMSO adducts will be a potential method for improving the performance of other inorganic PSCs.     

Chromium-Based Metal–Organic Framework as A-Site Cation in CsPbI2Br Perovskite Solar Cells

Inorganic CsPbI_xBr_3−x perovskite solar cells (PSCs) have gained enormous interest due to their excellent thermal stabilities. However, their intrinsically poor moisture stability hampers their further development. Herein, a chromium-based metal–organic framework group is intercalated inside the inorganic Pb I framework, resulting in a new multiple-dimensional electronically coupled CsPbI₂Br perovskite. In this structurally and electronically coupled perovskite, the π-conjugated terpyridyl can delocalize the excited valence electrons of metal Cr³⁺ ion, enabling multi-interactive charge-carrier transport channels within CsPbI₂Br perovskites. The stability and efficiency of the produced devices are substantially enhanced in comparison to their counterparts with only a pristine CsPbI₂Br active layer. The optimized all-inorganic PSC yields a power conversion efficiency (PCE) as high as 17.02%. Remarkably, the stabilized device retains 80% of its PCE after 1000 h in the ambient atmosphere. This study provides a new paradigm toward addressing the stability challenge of the inorganic perovskite while enhancing its carrier transport ability.     

Uniform Stepped Interfacial Energy Level Structure Boosts Efficiency and Stability of CsPbI2Br Solar Cells

All-inorganic CsPbI₂Br perovskite has attracted great attention as an absorber for perovskite solar cells (PSCs) due to its excellent thermal and light resistance. However, its device performance is restricted by the large energy level offset between CsPbI₂Br and the most commonly used hole-transporting layer (HTL). Herein, multicarbazolyl-substituted benzonitrile (4t-5CzBn) is inserted into the interface between CsPbI₂Br and HTL to form a uniform stepped (0.24 eV) interfacial energy level structure, which reduces the energy loss and boosts the hole extraction of CsPbI₂Br PSCs. The incorporation of 4t-5CzBn induces the increase in open-circuit voltage and fill factor from 1.256 V and 74.5% to 1.335 V and 82.3%, respectively. The optimized device achieves a power conversion efficiency of 17.34%, which is among the highest reported values of CsPbI₂Br PSCs. Besides the energy level tuning effect, the tert-butyl groups in 4t-5CzBn improve the moisture-resistance of CsPbI₂Br PSCs. The unencapsulated device maintains over 75% of its initial efficiency after 700 h storage in air. These results demonstrate that the rational tuned energy level step benefits the performance improvement of CsPbI₂Br PSCs.     

Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching

CsPbX₃ (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI₃ perovskite are reported. An air‐stable CsPbI₃ perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI₃/Pt/Ti/SiO₂/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>10⁶), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI₃ perovskite RS memory device on a flexible substrate is also successfully confirmed. With analyzing the influence of phase transition in CsPbI₃ on RS characteristics, a mechanism involving conducting filaments formed by metal cation migration is proposed to explain the RS behavior of the memory device. This study will contribute to the understanding of the intrinsic characteristics of IHPs for low‐voltage resistive switching and demonstrate the huge potential of them for use in low‐power consumption nonvolatile memory devices on next‐generation computing systems.     

Constructing All-Inorganic Perovskite/Fluoride Nanocomposites for Efficient and Ultra-Stable Perovskite Solar Cells

Organic-inorganic hybrid perovskite solar cells (PSCs) have rapidly developed over the past decade and have achieved the latest certified power conversion efficiency (PCE) up to 25.5%. However, unsatisfactory long-term operational stability for these hybrid PSCs remains a huge obstacle to further development and commercialization. Herein, a unique hetero-structured CsPbI₃/CaF₂ perovskite/fluoride nanocomposites (PFNCs) is fabricated via a newly developed facile two-step hetero-epitaxial growth strategy to deliver efficient and ultra-stable PSCs. After being incorporated into the crystal lattice of α-phase CsPbI₃ perovskite, the cubic-phase CaF₂ in the resultant CsPbI₃/CaF₂ PFNCs can not only passivate the intrinsic defects of CsPbI₃ perovskite itself but also effectively suppress the notorious ion migration in hybrid perovskite Cs_0.05FA_0.81MA_0.14PbI_2.55Br_0.45 (CsFAMA) thin-films of PSCs. As such, the CsFAMA PSC devices based on CsPbI₃/CaF₂-deposited perovskite thin-film achieve a mean PCE of 20.45%, in sharp contrast to 19.33% of the control devices without deposition. Specifically, the CsPbI₃/CaF₂-deposited PSC retains 85% of its original PCE after 1000 h continuous operation at the maximum power point under AM 1.5G solar light, far better than those of the control and CsPbI₃-deposited PSCs with a device T₈₅ lifetime of 315 and 125 h, respectively.     

Simultaneous Power Conversion Efficiency and Stability Enhancement of Cs2AgBiBr6 Lead‐Free Inorganic Perovskite Solar Cell through Adopting a Multifunctional Dye Interlayer

Perovskite solar cells (PSCs) are highly promising next‐generation photovoltaic devices because of the cheap raw materials, ideal band gap of ≈1.5 eV, broad absorption range, and high absorption coefficient. Although lead‐based inorganic‐organic PSC has achieved the highest power conversion efficiency (PCE) of 25.2%, the toxic nature of lead and poor stability strongly limits the commercialization. Lead‐free inorganic PSCs are potential alternatives to toxic and unstable organic‐inorganic PSCs. Particularly, double‐perovskite Cs₂AgBiBr₆‐based PSC has received interests for its all inorganic and lead‐free features. However, the PCE is limited by the inherent and extrinsic defects of Cs₂AgBiBr₆ films. Herein, an effective and facile strategy is reported for improving the PCE and stability by introducing an N719 dye interlayer, which plays multifunctional roles such as broadening the absorption spectrum, suppressing the charge carrier recombination, accelerating the hole extraction, and constructing an appropriate energy level alignment. Consequently, the optimizing cell delivers an outstanding PCE of 2.84%, much improved as compared with other Cs₂AgBiBr₆‐based PSCs reported so far in the literature. Moreover, the N719 interlayer greatly enhances the stability of PSCs under ambient conditions. This work highlights a useful strategy to boost the PCE and stability of lead‐free Cs₂AgBiBr₆‐based PSCs simultaneously, accelerating the commercialization of PSC technology.     

Preparation of Tortuous 3D γ‐CsPbI3 Films at Low Temperature by CaI2 as Dopant for Highly Efficient Perovskite Solar Cells

Inorganic cubic CsPbI₃ perovskite (α‐CsPbI₃) has been widely explored for perovskite solar cells (PSCs) due to its thermal stability and suitable bandgap of 1.73 eV. However, α‐CsPbI₃ usually requires high synthesis temperatures (>320 °C). Additionally, it usually undergoes phase transition to the nonperovskite structure phase (β‐CsPbI₃), which results in poor photoelectric performance in devices. In this study, it is first found that the tortuous 3D CsPbI₃ phase (γ‐CsPbI₃) can be prepared and used for PSCs by solution process without any additive at low temperature (60 °C). The γ‐CsPbI₃ exhibits suitable bandgap of 1.75 eV and favorable photoelectric properties. However, γ‐CsPbI₃ is a metastable phase and easily transforms into β‐CsPbI₃ in ambient moisture. In order to improve the stability of γ‐CsPbI₃, calcium ions (Ca²⁺) with a relatively small radius of 100 pm are used to partially substitute lead ions (119 pm). This research proves that Ca²⁺ can effectively improve the stability of the γ‐CsPbI₃ at room temperature. By optimizing the doping concentration of Ca²⁺ (CsPb_1?xCa_xI₃, x is from 0% to 2%), the Ca²⁺‐doped γ‐CsPbI₃ PSCs achieve a hysteresis‐free J–V curve and a maximum power conversion efficiency (PCE) of 9.20%.     

Highly-Stable CsPbI3 Perovskite Solar Cells with an Efficiency of 21.11% via Fluorinated 4-Amino-Benzoate Cesium Bifacial Passivation

The poor interface quality between cesium lead triiodide (CsPbI₃) perovskite and the electron transport layer limits the stability and efficiency of CsPbI₃ perovskite solar cells (PSCs). Herein, a 4-amino-2,3,5,6-tetrafluorobenzoate cesium (ATFC) is designed as a bifacial defect passivator to tailor the perovskite/TiO₂ interface. The comprehensive experiments demonstrate that ATFC can not only optimize the conductivity, electron mobility, and energy band structure of the TiO₂ layer by passivation of the undercoordinated Ti⁴⁺, oxygen vacancy (V_O), and free  OH defects but also promote the yield of high-quality CsPbI₃ film by synergistic passivation of undercoordinated Pb²⁺ defects with the  CO group and F atom, and limiting I⁻ migration via F···I interaction. Benefiting from the above interactions, the ATFC-modified CsPbI₃ device yields a champion power conversion efficiency (PCE) of 21.11% and an excellent open-circuit voltage (V_OC) of 1.24 V. Meanwhile, the optimized CsPbI₃ PSC maintains 92.74% of its initial efficiency after aging 800 h in air atmosphere, and has almost no efficiency attenuation after tracking at maximum power point for 350 h.     

Modification of Energy Level Alignment for Boosting Carbon-Based CsPbI2Br Solar Cells with 14% Certified Efficiency

Hole transfer material (HTM)-free, carbon-based all-inorganic perovskite solar cells (C-PSCs) are promising alternatives to conventional organic–inorganic hybrid PSCs in addressing thermal and moisture instability issues. However, the energy level mismatch between the inorganic perovskite and carbon electrode coupled, together with the incapability of the carbon electrode to reflect incident light for reabsorption, limits the power conversion efficiency (PCE) of C-PSCs. To address these issues, herein, a new strategy of a hexyltrimethylammonium bromide (HTAB)-modified CsPbI₂Br perovskite surface is devised to reduce this energy offset from 0.70 to 0.32 eV and increase the built-in potential by 70 mV for the final devices. Additionally, a CsPbI₂Br perovskite film with a thickness of up to 800 nm is realized via a hot-flow-assisted spin coating approach in an ambient atmosphere with humidity of less than 80%. Reduced energy offset coupled with suppressed charge recombination and thick perovskite layer boosts the champion PCE of CsPbI₂Br C-PSCs to 14.3% (J_sc = 14.1 mA cm⁻², V_oc = 1.26 V, and fill factor = 0.806), and the average PCE to 13.9% under one sun illumination. A new certified efficiency record of 14.0% is obtained for HTM-free inorganic C-PSCs. Meanwhile, the moisture-resistant barrier from the alkyl chain in HTAB improves the stability of the final devices.     

Stable α‐CsPbI3 Perovskite Nanowire Arrays with Preferential Crystallographic Orientation for Highly Sensitive Photodetectors

All‐inorganic metal‐halide perovskites CsPbX₃ (X = Cl, Br, I) exhibit higher stability than their organic–inorganic hybrid counterparts, but the thermodynamically instable perovskite α phase at room temperature of CsPbI₃ restricts the practical optoelectronic applications. Although the stabilization of α‐CsPbI₃ polycrystalline thin films is extensively studied, the creation of highly crystalline micro/nanostructures of α‐CsPbI₃ with large grain size and suppressed grain boundary remains challenging, which impedes the implementations of α‐CsPbI₃ for lateral devices, such as photoconductor‐type photodetectors. In this work, stable α‐CsPbI₃ perovskite nanowire arrays are demonstrated with large grain size, high crystallinity, regulated alignment, and position by controlling the dewetting dynamics of precursor solution on an asymmetric‐wettability topographical template. The correlation between the higher photoluminescence (PL) intensity and longer PL lifetime indicates the nanowires exhibit stable α phase and suppressed trap density. The preferential (100) orientation is characterized by discrete diffraction spots in grazing incidence wide‐angle scattering patterns, suggesting the long‐range crystallographic order of these nanowires. Based on these high‐quality nanowire arrays, highly sensitive photodetectors are realized with a responsivity of 1294 A W^?1 and long‐term stability with 90% performance retention after 30‐day ambient storage.     

Efficient and Ambient‐Air‐Stable Solar Cell with Highly Oriented 2D@3D Perovskites

3D organic–inorganic lead halide perovskites have shown great potential in efficient photovoltaic devices. However, the low stability of the 3D perovskite layer and random arrangement of the perovskite crystals hinder its commercialization road. Herein, a highly oriented 2D@3D ((AVA)₂PbI₄@MAPbI₃) perovskite structure combining the advantages of both 2D and 3D perovskite is fabricated through an in situ route. The highest power conversion efficiency (PCE) of 18.0% is observed from a 2D@3D perovskite solar cell (PSC), and it also shows significantly enhanced device stability under both inert (90% of initial PCE for 32 d) and ambient conditions (72% of initial PCE for 20 d) without encapsulation. The high efficiency of 18.0% and nearly twofold improvement of device stability in ambient compared with pure 3D PSCs confirm that such 2D@3D perovskite structure is an effective strategy for high performance and increasing stability and thus will enable the timely commercialization of PSCs.     

Stable Organic–Inorganic Perovskite Solar Cells without Hole‐Conductor Layer Achieved via Cell Structure Design and Contact Engineering

Within the past few years, the record efficiency of inorganic–organic perovskite solar cell (PSC) has improved rapidly up to over 20%. However, the viability of commercialization of the PSC technology has been seriously questioned due to the moisture‐ and thermal‐induced instabilities. Here, it is demonstrated that these issues may be mitigated via cell structure design and contact engineering. By employing the hole‐conductor layer‐free cell structure and a bi‐layer back contact consisting of a carbon/CH₃NH₃I composite layer and a compact hydrophobic carbon layer, the PSCs have shown excellent stability, inhibiting moisture ingression and heat‐induced perovskite degradation. It is found that, the unique bi‐layer contact enables the optimization of perovskite absorbers during thermal stress. As a result, instead of degradation, the devices present enhanced performance under heating at 100 °C for 30 min. The best‐performing cell shows a final efficiency of 13.6% from an initial efficiency of 11.3% after thermal stress. Upon encapsulation, these cells can even retain 90% of the initial efficiencies after water exposure and over 100% initial efficiency under thermal stress at 150 °C for half an hour. This approach provides a facile way for stabilizing the PSCs and opens a door for viable commercialization of the emerging PSC technology.     

Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses

Neuromorphic computing, which mimics biological neural networks, can overcome the high‐power and large‐throughput problems of current von Neumann computing. Two‐terminal memristors are regarded as promising candidates for artificial synapses, which are the fundamental functional units of neuromorphic computing systems. All‐inorganic CsPbI₃ perovskite‐based memristors are feasible to use in resistive switching memory and artificial synapses due to their fast ion migration. However, the ideal perovskite phase α‐CsPbI₃ is structurally unstable at ambient temperature and rapidly degrades to a non‐perovskite δ‐CsPbI₃ phase. Here, dual‐phase (Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6 is successfully fabricated to achieve improved air stability and surface morphology compared to each single phase. Notably, the Ag/polymethylmethacrylate/(Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6/Pt device exhibits non‐volatile memory functions with an endurance of ≈10³ cycles and retention of ≈10⁴ s with low operation voltages. Moreover, the device successfully emulates synaptic behavior such as long‐term potentiation/depression and spike timing/width‐dependent plasticity. This study will contribute to improving the structural and mechanical stability of all‐inorganic halide perovskites (IHPs) via the formation of dual phase. In addition, it proves the great potential of IHPs for use in low‐power non‐volatile memory devices and electronic synapses.     

One-Source Strategy Boosting Dopant-Free Hole Transporting Layers for Highly Efficient and Stable CsPbI2Br Perovskite Solar Cells

All-inorganic perovskites have emerged as promising photovoltaic materials due to their superior thermal stability compared to their organic–inorganic hybrid counterparts. However, the inferior film quality and doped hole transport layer (HTL) have a strong tendency to degrade the perovskite under high temperatures or harsh operating conditions. To solve these problems, a one-source strategy using the same polymer donor material (PDM) to simultaneously dope CsPbI₂Br perovskite films via antisolvent engineering and fabricating the HTL is proposed. The doping assists perovskite film growth and forms a top–down gradient distribution, generating CsPbI₂Br with enlarged grain size and reduced defect density. The PDM as the HTL suppresses the energy barrier and forms favorable electrical contacts for hole extraction, and assemble into a fingerprint-like morphology that improves the conductivity, facilitating the creation of a dopant-free HTL. Based on this one-source strategy using PBDB-T as PDM, the CsPbI₂Br perovskite solar cell with a dopant-free HTL achieves a power conversion efficiency (PCE) of 16.40%, which is one of the highest PCEs reported among all-inorganic CsPbI₂Br pero-SCs with a dopant-free HTL. Importantly, the devices exhibit the highest thermal stability at 85 °C and operational stability under continuous illumination even with Ag as the top electrode and present good universality.     

Carbon Nanotube Based Inverted Flexible Perovskite Solar Cells with All‐Inorganic Charge Contacts

Organolead halide perovskite solar cells (PSC) are arising as promising candidates for next‐generation renewable energy conversion devices. Currently, inverted PSCs typically employ expensive organic semiconductor as electron transport material and thermally deposited metal as cathode (such as Ag, Au, or Al), which are incompatible with their large‐scale production. Moreover, the use of metal cathode also limits the long‐term device stability under normal operation conditions. Herein, a novel inverted PSC employs a SnO₂‐coated carbon nanotube (SnO₂@CSCNT) film as cathode in both rigid and flexible substrates (substrate/NiO‐perovskite/Al₂O₃‐perovskite/SnO₂@CSCNT‐perovskite). Inverted PSCs with SnO₂@CSCNT cathode exhibit considerable enhancement in photovoltaic performance in comparison with the devices without SnO₂ coating owing to the significantly reduced charge recombination. As a result, a power conversion efficiency of 14.3% can be obtained on rigid substrates while the flexible ones achieve 10.5% efficiency. More importantly, SnO₂@CSCNT‐based inverted PSCs exhibit significantly improved stability compared to the standard inverted devices made with silver cathode, retaining over 88% of their original efficiencies after 550 h of full light soaking or thermal stress. The results indicate that SnO₂@CSCNT is a promising cathode material for long‐term device operation and pave the way toward realistic commercialization of flexible PSCs.     

δ‐CsPbI3 Intermediate Phase Growth Assisted Sequential Deposition Boosts Stable and High‐Efficiency Triple Cation Perovskite Solar Cells

Cs/FA/MA triple cation perovskite films have been well developed in the antisolvent dripping method, attributable to its outstanding photovoltaic and stability performances. However, a facile and effective strategy is still lacking for fabricating high‐quality large‐grain triple cation perovskite films via sequential deposition method a, which is one of the key technologies for high efficiency perovskite solar cells. To address this issue, a δ‐CsPbI₃ intermediate phase growth (CsPbI₃‐IPG) assisted sequential deposition method is demonstrated for the first time. The approach not only achieves incorporation of controllable cesium into (FAPbI₃)_1–x(MAPbBr₃)_x perovskite, but also enlarges the perovskite grains, manipulates the crystallization, modulates the bandgap, and improves the stability of final perovskite films. The photovoltaic performances of the devices based on these Cs/FA/MA perovskite films with various amounts of the δ‐CsPbI₃ intermediate phase are investigated systematically. Benefiting from moderate cesium incorporation and intermediate phase‐assisted grain growth, the optimized Cs/FA/MA perovskite solar cells exhibit a significantly improved power conversion efficiency and operational stability of unencapsulated devices. This facile strategy provides new insights into the compositional engineering of triple or quadruple cation perovskite materials with enlarged grains and superior stability via a sequential deposition method.     

Dopant‐Free,Amorphous–Crystalline Heterophase SnO2 Electron Transport Bilayer Enables >20% Efficiency in Triple‐Cation Perovskite Solar Cells

Improving the ohmic contact and interfacial morphology between an electron transport layer (ETL) and perovskite film is the key to boost the efficiency of planar perovskite solar cells (PSCs). In the current work, an amorphous–crystalline heterophase tin oxide bilayer (Bi‐SnO₂) ETL is prepared via a low‐temperature solution process. Compared with the amorphous SnO₂ sol–gel film (SG‐SnO₂) or the crystalline SnO₂ nanoparticle (NP‐SnO₂) counterparts, the heterophase Bi‐SnO₂ ETL exhibits improved surface morphology, considerably fewer oxygen defects, and better energy band alignment with the perovskite without sacrificing the optical transmittance. The best PSC device (active area ≈ 0.09 cm²) based on a Bi‐SnO₂ ETL is hysteresis‐less and achieves an outstanding power conversion efficiency of ≈20.39%, which is one of the highest efficiencies reported for SnO₂‐triple cation perovskite system based on green antisolvent. More fascinatingly, large‐area PSCs (active areas of ≈3.55 cm²) based on the Bi‐SnO₂ ETL also achieves an extraordinarily high efficiency of ≈14.93% with negligible hysteresis. The improved device performance of the Bi‐SnO₂‐based PSC arises predominantly from the improved ohmic contact and suppressed bimolecular recombination at the ETL/perovskite interface. The tailored morphology and energy band structure of the Bi‐SnO₂ has enabled the scalable fabrication of highly efficient, hysteresis‐less PSCs.     

Composition Engineering of All‐Inorganic Perovskite Film for Efficient and Operationally Stable Solar Cells

Cesium‐based inorganic perovskites have recently attracted great research focus due to their excellent optoelectronic properties and thermal stability. However, the operational instability of all‐inorganic perovskites is still a main hindrance for the commercialization. Herein, a facile approach is reported to simultaneously enhance both the efficiency and long‐term stability for all‐inorganic CsPbI_2.5Br_0.5 perovskite solar cells via inducing excess lead iodide (PbI₂) into the precursors. Comprehensive film and device characterizations are conducted to study the influences of excess PbI₂ on the crystal quality, passivation effect, charge dynamics, and photovoltaic performance. It is found that excess PbI₂ improves the crystallization process, producing high‐quality CsPbI_2.5Br_0.5 films with enlarged grain sizes, enhanced crystal orientation, and unchanged phase composition. The residual PbI₂ at the grain boundaries also provides a passivation effect, which improves the optoelectronic properties and charge collection property in optimized devices, leading to a power conversion efficiency up to 17.1% with a high open‐circuit voltage of 1.25 V. More importantly, a remarkable long‐term operational stability is also achieved for the optimized CsPbI_2.5Br_0.5 solar cells, with less than 24% degradation drop at the maximum power point under continuous illumination for 420 h.     

All‐Inorganic CsPbI3 Perovskite Phase‐Stabilized by Poly(ethylene oxide) for Red‐Light‐Emitting Diodes

Despite the excellent photoelectronic properties of the all‐inorganic cesium lead iodide (CsPbI₃) perovskite, which does not contain volatile and hygroscopic organic components, only a few CsPbI₃ devices are developed mainly owing to the frequent formation of an undesirable yellow δ‐phase at room temperature. Herein, it is demonstrated that a small quantity of poly(ethylene oxide) (PEO) added to the precursor solution effectively inhibits the formation of the yellow δ‐phase during film preparation, and promotes the development of a black α‐phase at a low crystallization temperature. A systematic study reveals that a thin, dense, pinhole‐free CsPbI₃ film is produced in the α‐phase and is stabilized with PEO that effectively reduces the grain size during crystallization. A thin α‐phase CsPbI₃ film with excellent photoluminescence is successfully employed in a light‐emitting diode with an inverted configuration of glass substrate/indium tin oxide/zinc oxide/poly(ethyleneimine)/α‐CsPbI₃/poly(4‐butylphenyl‐diphenyl‐amine)/WO₃/Al, yielding the characteristic red emission of the perovskite film at 695 nm with brightness, external quantum efficiency, and emission band width of ≈101 cd m^?2, 1.12%, and 32 nm, respectively.     

Buried Interface Modulation via Preferential Crystallization in All-Inorganic Perovskite Solar Cells: The Case of Multifunctional Ti3C2Tx

Despite inorganic CsPbI_3−xBr_x perovskite solar cells (PSCs) being promising in thermal stability, the perovskite degradation and severe nonradiative recombination at the interface hamper their further development. Herein, the typical MXene material, that is, Ti₃C₂T_x, is employed to be the buried interface prior to the perovskite absorber layer in the device, which multi-functionalizes the as-prepared electron-transfer layers by means of both fascinating preferential crystallization of perovskite and/or accelerating the charge extraction with respect to an ideal energy-level alignment and suppressed trap states. Accordingly, the power conversion efficiency of the modified PSC device is substantially enhanced by as high as 19.56% in comparison to their counterparts with only the pristine CsPbI_3−xBr_x active layer. More importantly, MXene modification is favorable to improve the wettability of perovskite precursor solution with enhanced grain size and crystallinity, thereby increasing the UV long-term stability of solar cells. This work provides a new paradigm toward alleviating the severe nonradiative recombination at the interface in the device whilst enhancing the long-term stability via the preferential crystallization process.