Organic Tribotronic Transistor for Contact‐Electrification‐Gated Light‐Emitting Diode

Tribotronics is a new field about the devices fabricated using the electrostatic potential created by contact electrification as a “gate” voltage to tune/control charge carrier transport in semiconductors. In this paper, an organic tribotronic transistor is proposed by coupling an organic thin film transistor (OTFT) and a triboelectric nanogenerator (TENG) in vertical contact‐separation mode. Instead of using the traditional gate voltage for controlling, the charge carrier transportation in the OTFT can be modulated by the contact‐induced electrostatic potential of the TENG. By further coupling with an organic light‐emitting diode, a contact‐electrification‐gated light‐emitting diode (CG‐LED) is fabricated, in which the operating current and light‐emission intensity can be tuned/controlled by an external force–induced contact electrification. Two different modes of the CG‐LED have been demonstrated and the brightness can be decreased and increased by the applied physical contact, respectively. Different from the conventional organic light‐emitting transistor controlled by an electrical signal, the CG‐LED has realized the direct interaction between the external environment/stimuli and the electroluminescence device. By introducing optoelectronics into tribotronics, the CG‐LED has open up a new field of tribophototronics with many potential applications in interactive display, mechanical imaging, micro‐opto‐electro‐mechanical systems, and flexible/touch optoelectronics.     

Low‐Voltage Operational,Low‐Power Consuming,and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics

Electronics based on layered indium selenide (InSe) channels exhibit promising carrier mobility and switching characteristics. Here, an InSe tribotronic transistor (denoted as w/In InSe T‐FET) obtained through the vertical combination of an In‐doped InSe transistor and triboelectric nanogenerator is demonstrated. The w/In InSe T‐FET can be operated by adjusting the distance between two triboelectrification layers, which generates a negative electrostatic potential that serves as a gate voltage to tune the charge carrier transport behavior of the InSe channel. Benefiting from the surface charging doping of the In layer, the w/In InSe T‐FET exhibits high reliability and sensitivity with a large on/off current modulation of 10⁶ under a low drain–source voltage of 0.1 V and external frictional force. To demonstrate its function as a power‐saving tactile sensor, the w/In InSe T‐FET is used to sense “INSE” in Morse code and power on a light‐emitting diode. This work reveals the promise of 2D material–based tribotronics for use in nanosensors with low power consumption as well as in intelligent systems.     

Transparent Nanopaper‐Based Flexible Organic Thin‐Film Transistor Array

Eco‐friendly and low‐cost cellulose nanofiber paper (nanopaper) is a promising candidate as a novel substrate for flexible electron device applications. Here, a thin transparent nanopaper‐based high‐mobility organic thin‐film transistor (OTFT) array is demonstrated for the first time. Nanopaper made from only native wood cellulose nanofibers has excellent thermal stability (>180 °C) and chemical durability, and a low coefficient of thermal expansion (CTE: 5–10 ppm K^‐1). These features make it possible to build an OTFT array on nanopaper using a similar process to that for an array on conventional glass. A short‐channel bottom‐contact OTFT is successfully fabricated on the nanopaper by a lithographic and solution‐based process. Owing to the smoothness of the cast‐coated nanopaper surface, a solution processed organic semiconductor film on the nanopaper comprises large crystalline domains with a size of approximately 50–100 μm, and the corresponding TFT exhibits a high hole mobility of up to 1 cm²V^‐1 s^‐1 and a small hysteresis of below 0.1 V under ambient conditions. The nanopaper‐based OTFT also had excellent flexibility and can be formed into an arbitrary shape. These combined technologies of low‐cost and eco‐friendly paper substrates and solution‐based organic TFTs are promising for use in future flexible electronics application such as flexible displays and sensors.     

采用不同透明电极的非晶铟镓锌氧化物薄膜晶体管

采用透明材料ITO和AZO为源漏电极,在室温下利用射频磁控溅射方法制作了底栅结构的非晶铟镓锌氧化物薄膜晶体管。实验发现,制备的薄膜晶体管均表现出了良好的开关特性。其中采用AZO为电极的薄膜晶体管的场效应迁移率为1.95cm2/V.s,开关比为4.53×105,在正向偏压应力测试下,阈值电压的漂移量为4.49V。     

Mechanoplastic Tribotronic Floating‐Gate Neuromorphic Transistor

The emulation of synaptic plasticity to achieve sophisticated cognitive functions and adaptive behaviors is critical to the evolution of neuromorphic computation and artificial intelligence. More feasible plastic strategies (e.g., mechanoplasticity) are urgent to achieve comparable, versatile, and active cognitive complexity in neuromorphic systems. Here, a versatile mechanoplastic artificial synapse based on tribotronic floating‐gate MoS₂ synaptic transistors is proposed. Mechanical displacement can induce triboelectric potential coupling to the floating‐gate synaptic transistor, trigger a postsynaptic current signal, and modulate the synaptic weights, which realizes the synaptic mechanoplasticity in an active and interactive way. Typical synaptic plasticity behaviors including potentiation/inhibition and paired pulse facilitation/depression are successfully imitated. Assistant with the charge trapping by floating gate, the artificial synapse can realize mechanical displacement derived short‐term and long‐term plasticity simultaneously. A facile artificial neural network is also constructed to demonstrate an adding synaptic weight and neuromorphic logic switching (AND, OR) by mechanoplasticity without building complex complementary metal oxide semiconductor circuits. The proposed mechanoplastic artificial synapse offers a favorable candidate for the construction of mechanical behavior derived neuromorphic devices to overcome the von Neumann bottleneck and perform advanced synaptic behaviors.     

Ultrathin,Organic, Semiconductor/Polymer Blends by Scanning Corona‐Discharge Coating for High‐Performance Organic Thin‐Film Transistors

A new thin‐film coating process, scanning corona‐discharge coating (SCDC), to fabricate ultrathin tri‐isopropylsilylethynyl pentacene (TIPS‐PEN)/amorphous‐polymer blend layers suitable for high‐performance, bottom‐gate, organic thin‐film transistors (OTFTs) is described. The method is based on utilizing the electrodynamic flow of gas molecules that are corona‐discharged at a sharp metallic tip under a high voltage and subsequently directed towards a bottom electrode. With the static movement of the bottom electrode, on which a blend solution of TIPS‐PEN and an amorphous polymer is deposited, SCDC provides an efficient route to produce uniform blend films with thicknesses of less than one hundred nanometers, in which the TIPS‐PEN and the amorphous polymer are vertically phase‐separated into a bilayered structure with a single‐crystalline nature of the TIPS‐PEN. A bottom‐gate field‐effect transistor with a blend layer of TIPS‐PEN/polystyrene (PS) (90/10 wt%) operated at ambient conditions, for example, indeed exhibits a highly reliable device performance with a field‐effect mobility of approximately 0.23 cm² V^?1 s^?1: two orders of magnitude greater than that of a spin‐coated blend film. SCDC also turns out to be applicable to other amorphous polymers, such as poly(α‐methyl styrene) and poly(methyl methacrylate) and, readily combined with the conventional transfer‐printing technique, gives rise to micropatterned arrays of TIPS‐PEN/polymer films.     

High‐Performance and Stable Organic Thin‐Film Transistors Based on Fused Thiophenes

A series of new organic semiconductors for organic thin‐film transistors (OTFTs) using dithieno[3,2‐b:2′,3′‐d]thiophene as the core are synthesized. Their electronic and optical properties are investigated using scanning electron microscopy (SEM), X‐ray diffraction (XRD), UV‐vis and photoluminescence spectroscopies, thermal gravimetric analysis (TGA), and differential scanning calorimetry (DSC). The compounds exhibit an excellent field‐effect performance with a high mobility of 0.42 cm² V^–1 s^–1 and an on/off ratio of 5 × 10⁶. XRD patterns reveal these films, grown by vacuum deposition, to be highly crystalline, and SEM reveals well‐interconnected, microcrystalline domains in these films at room temperature. TGA and DSC demonstrate that the phenyl‐substituted compounds possess excellent thermal stability. Furthermore, weekly shelf‐life tests (under ambient conditions) of the OTFTs based on the phenyl‐substituted compounds show that the mobility for the bis(diphenyl)‐substituted thiophene was almost unchanged for more than two months, indicating a high environmental stability.     

Polymer Thin‐Film Transistor Arrays Patterned by Stamping

We present a process to stamp semiconductor polymers suitable for the parallel fabrication of thin‐film transistor island arrays. This process is compatible with roll‐to‐roll fabrication. When a chemically treated elastomeric stamp is pressed against a substrate previously coated with the polymer solution, a capillary force drives the polymer solution into the stamp recesses. Simultaneously, the raised features of the stamp in contact with the substrate absorb the solvent. The resulting polymer thin film reproduces the pattern of the raised features of the stamp. Features with lateral dimensions as small as 2 μm are faithfully reproduced. We use this stamping process to fabricate arrays of polymer thin‐film transistors (TFTs) using poly(fluorene‐co‐bithiophene) and poly(thiophene) semiconductors.     

Bioinspired Triboelectric Nanogenerators as Self‐Powered Electronic Skin for Robotic Tactile Sensing

Electronic skin (e‐skin) has been under the spotlight due to great potential for applications in robotics, human–machine interfaces, and healthcare. Meanwhile, triboelectric nanogenerators (TENGs) have been emerging as an effective approach to realize self‐powered e‐skin sensors. In this work, bioinspired TENGs as self‐powered e‐skin sensors are developed and their applications for robotic tactile sensing are also demonstrated. Through the facile replication of the surface morphology of natural plants, the interlocking microstructures are generated on tribo‐layers to enhance triboelectric effects. Along with the adoption of polytetrafluoroethylene (PTFE) tinny burrs on the microstructured tribo‐surface, the sensitivity for pressure measurement is boosted with a 14‐fold increase. The tactile sensing capability of the TENG e‐skin sensors are demonstrated through the characterizations of handshaking pressure and bending angles of each finger of a bionic hand during handshaking with human. The TENG e‐skin sensors can also be utilized for tactile object recognition to measure surface roughness and discern hardness. The facile fabrication scheme of the self‐powered TENG e‐skin sensors enables their great potential for applications in robotic dexterous manipulation, prosthetics, human–machine interfaces, etc.     

Anodized ITO Thin‐Film Transistors

This paper reports that the electrical, optical and structural properties of ITO film can be significantly modulated by an anodization treatment. An ITO TFT technology based on the anodization approach is then proposed and demonstrated, which results in an ideal homo‐junction device structure with the source/drain/pixel electrodes and channel region made of one single ITO layer. A preliminary device fabrication at room temperature shows the resulting TFT has an on/off current ratio exceeding 1 × 10⁸, a saturation mobility of 29.0 cm² V^?1 s^?1, and a subthreshold swing of 0.20 V per decade. This technology also allows a feasible V_T adjustment and muti‐V_T implementation.     

Design of Novel Dielectric Surface Modifications for Perylene Thin‐Film Transistors

Dielectric surface modifications (DSMs) can improve the performance of organic thin‐film transistors (OTFTs) significantly. In order to gain a deeper understanding of this performance enhancement and to facilitate high‐mobility transistors, perylene based devices utilizing novel dielectric surface modifications have been produced. Novel DSMs, based on derivates of tridecyltrichlorosilane (TTS) with different functional end‐groups as well as polymeric dielectrics have been applied to tailor the adhesion energy of perylene. The resulting samples were characterized by electronic transport measurements, scanning probe microscopy, and X‐ray diffraction (XRD). Measurements of the surface free energy of the modified dielectric enabled the calculation of the adhesion energy of perylene upon these novel DSMs by the equation‐of‐state approach. These calculations demonstrate the successful tailoring of the adhesion energy. With these novel DSMs, perylene thin‐films with a superior film quality were produced, which enabled high‐performance perylene‐based OTFTs with high charge‐carrier mobility.     

Self‐Powered Tactile Sensor Array Systems Based on the Triboelectric Effect

With the arrival of intelligent terminals, tactile sensors which are capable of sensing various external physical stimuli are considered among the most vital devices for the next generation of smart electronics. To create a self‐powered tactile sensor system that can function sustainably and continuously without an external power source is of crucial significance. An overview of the development in self‐powered tactile sensor array system based on the triboelectric effect is systematically presented. The combination of multi‐functionalization and high performance of tactile sensors aimed at achieving highly comprehensive performance is presented. For the tactile sensor unit, a development is summarized based on the two primary modes which are vertical contact–separation and single‐electrode. For the pressure mapping array, the resolution is significantly enhanced by the novel cross‐type configuration based on the single‐electrode mode. Integrated with other mechanisms, the performance will be further elevated by broadening of the detect range and realizing of visualization of pressure imaging. Then, two main applications of human–machine interaction (HMI) and trajectory monitoring are comprehensively summarized. Finally, the future perspectives of self‐powered tactile sensor system based on triboelectric effect are discussed.     

Flexible High-Resolution Triboelectric Sensor Array Based on Patterned Laser-Induced Graphene for Self-Powered Real-Time Tactile Sensing

Flexible tactile sensors are garnering substantial interest for various promising applications, including artificial intelligence, prosthetics, healthcare monitoring, and human–machine interactions (HMI). However, it still remains a critical challenge in developing high-resolution tactile sensors without involving high-cost and complicated manufacturing processes. Herein, a flexible high-resolution triboelectric sensing array (TSA) for self-powered real-time tactile sensing is developed through a facile, mask-free, high-efficient, and environmentally friendly laser direct writing technique. A 16 × 16 pixelated TSA with a resolution of 8 dpi based on patterned laser-induced graphene (LIG) electrodes (7 Ω sq⁻¹) is fabricated by the complementary intersection overlapping between upper and lower aligned semicircular electrode arrays. With the especially patterning design, the complexity of TSA and the number of data channels is reduced. Meanwhile, the TSA platform exhibits excellent durability and synchronicity and enables the achievement of real-time visualization of multipoint touch, sliding, and tracking motion trajectory without power consumption. Furthermore, a smart wireless controlled HMI system, composed of a 9-digital arrayed touch panel based on a LIG-patterned triboelectric nanogenerator, is constructed to control personal electronics wirelessly. Consequently, the self-powered TSA as a promising platform demonstrates great potential for an active real-time tactile sensing system, wireless controlled HMI, security identification and, many others.     

n‐Type Quinoidal Oligothiophene‐Based Semiconductors for Thin‐Film Transistors and Thermoelectrics

Organic electronic devices have gained immense popularity in the last 30 years owing to their increasing performance. Organic thin‐film transistors (OTFTs) are one of the basic organic electronic devices with potential industrial applications. Another class of devices called organic thermoelectric (OTE) materials can directly transform waste heat into usable electrical power without causing any pollution. p‐Type transistors outperform n‐type transistors because the latter requires a lower orbital energy level for efficient electron injection and stable electron transport under ambient conditions. Aromatic building blocks can be utilized in constructing n‐type semiconductors. Quinoidal compounds are another promising platform for optoelectronic applications because of their unique properties. Since their discovery in 1970s, quinoidal oligothiophene‐based n‐type semiconductors have drawn considerable attention as candidates for high‐performance n‐type semiconductors in OTFTs and OTEs. Herein, the development history of quinoidal oligothiophene‐based semiconductors is summarized, with a focus on the molecular design and the influence of structural modification on molecular packing and thus the device performance of the corresponding quinoidal oligothiophene‐based semiconductors. Insights on the potential of quinoidal oligothiophenes for high‐performance n‐type OTFTs and OTEs are also provided.     

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

Flexible transparent display is a promising candidate to visually communicate with each other in the future Internet of Things era. The flexible oxide thin‐film transistors (TFTs) have attracted attention as a component for transparent display by its high performance and high transparency. The critical issue of flexible oxide TFTs for practical display applications, however, is the realization on transparent and flexible substrate without any damage and characteristic degradation. Here, the ultrathin, flexible, and transparent oxide TFTs for skin‐like displays are demonstrated on an ultrathin flexible substrate using an inorganic‐based laser liftoff process. In this way, skin‐like ultrathin oxide TFTs are conformally attached onto various fabrics and human skin surface without any structural damage. Ultrathin flexible transparent oxide TFTs show high optical transparency of 83% and mobility of 40 cm² V^?1 s^?1. The skin‐like oxide TFTs show reliable performance under the electrical/optical stress tests and mechanical bending tests due to advanced device materials and systematic mechanical designs. Moreover, skin‐like oxide logic inverter circuits composed of n‐channel metal oxide semiconductor TFTs on ultrathin, transparent polyethylene terephthalate film have been realized.     

Solubility‐Induced Ordered Polythiophene Precursors for High‐Performance Organic Thin‐Film Transistors

With the aim of enhancing the field‐effect mobility of self‐assembled regioregular poly(3‐hexylthiophene), P3HT, by promoting two‐dimensional molecular ordering, the organization of the P3HT in precursor solutions is transformed from random‐coil conformation to ordered aggregates by adding small amounts of the non‐solvent acetonitrile to the solutions prior to film formation. The ordering of the precursor in the solutions significantly increases the crystallinity of the P3HT thin films. It is found that with the appropriate acetonitrile concentration in the precursor solution, the resulting P3HT nanocrystals adopt a highly ordered molecular structure with a field‐effect mobility dramatically improved by a factor of approximately 20 depending on the P3HT concentration. This improvement is due to the change in the P3HT organization in the precursor solution from random‐coil conformation to an ordered aggregate structure as a result of the addition of acetonitrile. In the good solvent chloroform, the P3HT molecules are molecularly dissolved and adopt a random‐coil conformation, whereas upon the addition of acetonitrile, which is a non‐solvent for aromatic backbones and alkyl side chains, 1D or 2D aggregation of the P3HT molecules occurs depending on the P3HT concentration. This state minimizes the unfavorable interactions between the poorly soluble P3HT and the acetonitrile solvent, and maximizes the favorable π–π stacking interactions in the precursor solution, which improves the molecular ordering of the resulting P3HT thin film and enhances the field‐effect mobility without post‐treatment.     

Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer

Here, a new approach to the layer‐by‐layer solution‐processed fabrication of organic/inorganic hybrid self‐assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P‐PAE, consists of polarizable π‐electron phosphonic acid‐based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin‐coating or blade‐coating in air, by alternating P‐PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic‐ZrOx bilayers, exhibit tunable film thickness, well‐defined nanostructures, large electrical capacitance (up to 558 nF cm^?2), and good insulating properties (leakage current densities as low as 10^?6 A cm^?2). Organic thin‐film transistors that are fabricated with representative p‐/n‐type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin‐coated PSAND‐based devices.     

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution‐processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low‐temperature (<350 °C) solution‐processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n‐type and p‐type oxide‐based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low‐temperature solution‐processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.