Micropatterned P(VDF‐TrFE) Film‐Based Piezoelectric Nanogenerators for Highly Sensitive Self‐Powered Pressure Sensors

Here micropatterned poly(vinylidenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) films‐based piezoelectric nanogenerators (PNGs) with high power‐generating performance for highly sensitive self‐powered pressure sensors are demonstrated. The microstructured P(VDF‐TrFE)‐based PNGs reveal nearly five times larger power output compared to a flat film‐based PNG. The micropatterning of P(VDF‐TrFE) polymer makes itself ultrasensitive in response to mechanical deformation. The application is demonstrated successfully as self‐powered pressure sensors in which mechanical energy comes from water droplet and wind. The mechanism of the high performance is intensively discussed and illustrated in terms of strain developed in the flat and micropatterned P(VDF‐TrFE) films. The impact derived from the patterning on the output performance is studied in term of effective pressure using COMSOL multiphysics software.     

Semitransparent,Flexible, and Self‐Powered Photodetectors Based on Ferroelectricity‐Assisted Perovskite Nanowire Arrays

Transparent and flexible photodetectors hold great promise in next‐generation portable and wearable optoelectronic devices. However, most of the previously reported devices need an external energy power source to drive its operation or require complex fabrication processes. Herein, designed is a semitransparent, flexible, and self‐powered photodetector based on the integrated ferroelectric poly(vinylidene‐fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and perovskite nanowire arrays on the flexible polyethylene naphthalate substrate via a facile imprinting method. Through optimizing the treatment conditions, including polarization voltage, polarization time, and the concentration of P(VDF‐TrFE), the resulting device exhibits remarkable detectivity (7.3 × 10¹² Jones), fast response time (88/154 µs) at zero bias, as well as outstanding mechanical stability. The excellent performance is attributed to the efficient charge separation and transport originating from the highly oriented 1D transport pathway and the polarization‐induced internal electric field within P(VDF‐TrFE)/perovskite hybrid nanowire arrays.     

Non‐volatile Ferroelectric Poly(vinylidene fluoride‐co‐trifluoroethylene) Memory Based on a Single‐Crystalline Tri‐isopropylsilylethynyl Pentacene Field‐Effect Transistor

A new type of nonvolatile ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) memory based on an organic thin‐film transistor (OTFT) with a single crystal of tri‐isopropylsilylethynyl pentacene (TIPS‐PEN) as the active layer is developed. A bottom‐gate OTFT is fabricated with a thin P(VDF‐TrFE) film gate insulator on which a one‐dimensional ribbon‐type TIPS‐PEN single crystal, grown via a solvent‐exchange method, is positioned between the Au source and drain electrodes. Post‐thermal treatment optimizes the interface between the flat, single‐crystalline ab plane of TIPS‐PEN and the polycrystalline P(VDF‐TrFE) surface with characteristic needle‐like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source–drain current modulation with an ON/OFF ratio hysteresis greater than 10³, which is superior to a ferroelectric P(VDF‐TrFE) OTFT that has a vacuum‐evaporated pentacene layer. Data retention longer than 5 × 10⁴ s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF‐TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS‐PEN on the chemically micropatterned surface allows fabrication arrays of TIPS‐PEN single crystals that can be potentially useful for integrated arrays of ferroelectric polymeric TFT memory.     

Bio‐Inspired Stretchable,Adhesive, and Conductive Structural Color Film for Visually Flexible Electronics

The rapid progress in flexible electronic devices has attracted immense interest in many applications, such as health monitoring devices, sensory skins, and implantable apparatus. Here, inspired by the adhesion features of mussels and the color shift mechanism of chameleons, a novel stretchable, adhesive, and conductive structural color film is presented for visually flexible electronics. The film is generated by adding a conductive carbon nanotubes polydopamine (PDA) filler into an elastic polyurethane (PU) inverse opal scaffold. Owing to the brilliant flexibility and inverse opal structure of the PU layer, the film shows stable stretchability and brilliant structural color. Besides, the catechol groups on PDA impart the film with high tissue adhesiveness and self‐healing capability. Notably, because of its responsiveness, the resultant film is endowed with color‐changing ability that responds to motions, which can function as dual‐signal soft human‐motion sensors for real‐time color‐sensing and electrical signal monitoring. These features make the bio‐inspired hydrogel‐based electronics highly potential in the flexible electronics field.     

Ultrahigh‐Performance Flexible and Self‐Powered Photodetectors with Ferroelectric P(VDF‐TrFE)/Perovskite Bulk Heterojunction

Flexible and self‐powered perovskite photodetectors attract widespread research interests due to their potential applications in portable and wearable optoelectronic devices. However, the reported devices mainly adopt an independent layered structure with complex fabrication processes and high carrier recombination. Herein, an integrated ferroelectric poly(vinylidene‐fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and perovskite bulk heterojunction film photodetector on the polyethylene naphthalate substrate is demonstrated. Under the optimum treatment conditions (the polarization voltage and time, and the concentration of P(VDF‐TrFE)), the photodetector exhibits a largely enhanced performance compared to the pristine perovskite device. The resulting device exhibits ultrahigh performance with a large detectivity (1.4 × 10¹³ Jones) and fast response time (92/193 µs) at the wavelength of 650 nm. The improved performance is attributed to the fact that the polarized P(VDF‐TrFE)/perovskite hybrid film provides a stronger built‐in electric field to facilitate the separation and transportation of photogenerated carriers. These findings provide a new route to design self‐powered photodetectors from the aspect of device structure and carrier transport.     

A Highly Stretchable Fiber‐Based Triboelectric Nanogenerator for Self‐Powered Wearable Electronics

The development of flexible and stretchable electronics has attracted intensive attention for their promising applications in next‐generation wearable functional devices. However, these stretchable devices that are made in a conventional planar format have largely hindered their development, especially in highly stretchable conditions. Herein, a novel type of highly stretchable, fiber‐based triboelectric nanogenerator (fiber‐like TENG) for power generation is developed. Owing to the advanced structural designs, including the fiber‐convolving fiber and the stretchable electrodes on elastic silicone rubber fiber, the fiber‐like TENG can be operated at stretching mode with high strains up to 70% and is demonstrated for a broad range of applications such as powering a commercial capacitor, LCD screen, digital watch/calculator, and self‐powered acceleration sensor. This work verifies the promising potential of a novel fiber‐based structure for both power generation and self‐powered sensing.     

Stretchable Energy‐Harvesting Tactile Interactive Interface with Liquid‐Metal‐Nanoparticle‐Based Electrodes

Energy‐harvesting electronic skin (E‐skin) is highly promising for sustainable and self‐powered interactive systems, wearable human health monitors, and intelligent robotics. Flexible/stretchable electrodes and robust energy‐harvesting components are critical in constructing soft, wearable, and energy‐autonomous E‐skin systems. A stretchable energy‐harvesting tactile interactive interface is demonstrated using liquid metal nanoparticles (LM‐NPs)‐based electrodes. This stretchable energy‐harvesting tactile interface relies on triboelectric nanogenerator composed of a galinstan LM‐NP‐based stretchable electrode and patterned elastic polymer friction and encapsulation layer. It provides stable and high open‐circuit voltage (268 V), short‐circuit current (12.06 µA), and transferred charges (103.59 nC), which are sufficient to drive commercial portable electronics. As a self‐powered tactile sensor, it presents satisfactory and repeatable sensitivity of 2.52 V·kPa^?1 and is capable of working as a touch interactive keyboard. The demonstrated stretchable and robust energy‐harvesting E‐skin using LM‐NP‐based electrodes is of great significance in sustainable human–machine interactive system, intelligent robotic skin, security tactile switches, etc.     

Electrode Dependence of Tunneling Electroresistance and Switching Stability in Organic Ferroelectric P(VDF‐TrFE)‐Based Tunnel Junctions

Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristor‐based computing circuits. Thus far, most research has focused on FTJs with a perovskite oxide ferroelectric tunnel barrier. As the need for high‐temperature epitaxial film growth challenges the technological application of such inorganic junctions, more easily processable organic ferroelectrics can serve as alternative if large tunneling electroresistance (TER) and good switching durability would persist. This study reports on the performance of FTJs with a spin‐coated ferroelectric P(VDF‐TrFE) copolymer tunnel barrier. The use of three different bottom electrodes, indium tin oxide (ITO), La_0.67Sr_0.33MnO₃, (LSMO), and Nb‐doped SrTiO₃ (STO) are compared and it is shown that the polarity and magnitude of the TER effect depend on their conductivity. The largest TER of up to 10⁷% at room temperature is measured on FTJs with a semiconducting Nb‐doped STO electrode. This large switching effect is attributed to the formation of an extra barrier over the space charge region in the substrate. The organic FTJs exhibit good resistance retention and switching endurance up to 380 K, which is just below the ferroelectric Curie temperature of the P(VDF‐TrFE) barrier.     

Processing and Low Voltage Switching of Organic Ferroelectric Phase‐Separated Bistable Diodes

The processing of solution‐based binary blends of the ferroelectric random copolymer poly(vinylidene fluoride‐trifluoroethylene) P(VDF‐TrFE) and the semiconducting polymer poly(9,9‐dioctylfluorenyl‐2,7‐diyl) (PFO) applied by spin‐coating and wire‐bar coating is investigated. By systematic variation of blend composition, solvent, and deposition temperature it is shown that much smoother blend films can be obtained than reported thus far. At a low PFO:P(VDF‐TrFE) ratio the blend film consists of disk‐shaped PFO domains embedded in a P(VDF‐TrFE) matrix, while an inverted structure is obtained in case the P(VDF‐TrFE) is the minority component. The microstructure of the phase separated blend films is self‐affine. From this observation and from the domain size distribution it is concluded that the phase separation occurs via spinodal decomposition, irrespectively of blend ratio. This is explained by the strong incompatibility of the two polymers expressed by the binary phase diagram, as constructed from thermal analysis data. Time resolved numerical simulation of the microstructure evolution during de‐mixing qualitatively shows how an elevated deposition temperature has a smoothening effect as a result of the reduction of the repulsion between the blend components. The small roughness allowed the realization of bistable rectifying diodes that switch at low voltages with a yield of 100%. This indicates that memory characteristics can be tailored from the outset while processing parameters can be adjusted according to the phase behavior of the active components.     

A Self‐Healable,Highly Stretchable,and Solution Processable Conductive Polymer Composite for Ultrasensitive Strain and Pressure Sensing

Mimicking human skin's functions to develop electronic skins has inspired tremendous efforts in design and synthesis of novel soft materials with simplified fabrication methods. However, it still remains a great challenge to develop electronically conductive materials that are both stretchable and self‐healable. Here it is demonstrated that a ternary polymer composite comprised of polyaniline, polyacrylic acid, and phytic acid can exhibit high stretchability ( ≈ 500%) and excellent self‐healing properties. The polymer composite with optimized composition shows an electrical conductivity of 0.12 S cm^?1. On rupture, both electrical and mechanical properties can be restored with ≈ 99% efficiency in a 24 h period, which is enabled by the dynamic hydrogen bonding and electrostatic interactions. It is further shown that this composite is both strain and pressure sensitive, and therefore can be used for fabricating strain and pressure sensors to detect a variety of mechanical deformations with ultrahigh sensitivity. The sensitivity and sensing range are the highest among all of the reported self‐healable piezoresistive pressure sensors and even surpass most flexible mechanical sensors. Notably, this composite is prepared via a solution casting process, which potentially allows for large‐area, low‐cost fabrication electronic skins.     

Soft Core/Shell Packages for Stretchable Electronics

This paper presents materials and core/shell architectures that provide optimized mechanical properties in packages for stretchable electronic systems. Detailed experimental and theoretical studies quantitatively connect the geometries and elastic properties of the constituent materials to the overall mechanical responses of the integrated systems, with a focus on interfacial stresses, effective modulus, and maximum extent of elongation. Specific results include core/shell designs that lead to peak values of the shear and normal stresses on the skin that remain less than 10 kPa even for applied strains of up to 20%, thereby inducing minimal somatosensory perception of the device on the human skin. Additional, strain‐limiting mesh structures embedded in the shell improve mechanical robustness by protecting the active components from strains that would otherwise exceed the fracture point. Demonstrations in precommercial stretchable electronic systems illustrate the utility of these concepts.     

A Highly Stretchable and Self‐Healing Supramolecular Elastomer Based on Sliding Crosslinks and Hydrogen Bonds

The long application life and stable performance of stretchable electronics have been putting forward requirements for both higher mechanical properties and better self‐healing ability of polymeric substrates. However, for self‐healing materials, simultaneously improving stretchability and robustness is still challenging. Here, by incorporating sliding crosslinker (polyrotaxanes) and hydrogen bonds into a polymer, a highly stretchable and self‐healable elastomer with good mechanical strength is achieved. The elastomer exhibits very high stretchability, such that it can be stretched to 2800% with a fracture strength of 1.05 MPa. Moreover, the elastomer can achieve nearly complete self‐healing (93%) at 55 °C. Next, tensile tests under different temperatures, step extension experiments, and in situ small angle X‐ray scattering confirm that the excellent stretchability is attributed to the combined effects of sliding cyclodextrins along guest chains and hydrogen bonds. Furthermore, a strain sensor by coating the single‐wall carbon nanotubes onto the surface of the elastic substrate is fabricated.     

An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity

For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large‐area and high‐density devices. A major challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. While crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high‐performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near‐amorphous, indacenodithiophene‐co‐benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2‐b]thiophene‐diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm² V^?1 s^?1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV–vis and grazing‐incidence X‐ray diffraction to elucidate the molecular origins of high ductility. In summary, the near‐amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high‐performance polymer semiconductor.     

Stretchable Self‐Powered Fiber‐Based Strain Sensor

The rapid development of electrical skin and wearable electronics raises the requirement of stretchable strain sensors. In this study, an active fiber‐based strain sensor (AFSS) is fabricated by coiling a fiber‐based generator around a stretchable silicone fiber. The AFSS shows the sensitive and stable performance and has the ability to detect the strain up to 25%, which is also demonstrated to detect finger motion states. It may play an essential role in future self‐powered sensor system.     

Load‐Controlled Roll Transfer of Oxide Transistors for Stretchable Electronics

A stretchable and transparent In‐Ga‐Zn‐O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load‐controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load‐controlled roll transfer in stretchable electronics. The mechanics of the load‐controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer.     

High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory

High‐performance top‐gated organic field‐effect transistor (OFET) memory devices using electrets and their applications to flexible printed organic NAND flash are reported. The OFETs based on an inkjet‐printed p‐type polymer semiconductor with efficiently chargeable dielectric poly(2‐vinylnaphthalene) (PVN) and high‐k blocking gate dielectric poly(vinylidenefluoride‐trifluoroethylene) (P(VDF‐TrFE)) shows excellent non‐volatile memory characteristics. The superior memory characteristics originate mainly from reversible charge trapping and detrapping in the PVN electret layer efficiently in low‐k/high‐k bilayered dielectrics. A strategy is devised for the successful development of monolithically inkjet‐printed flexible organic NAND flash memory through the proper selection of the polymer electrets (PVN or PS), where PVN/‐ and PS/P(VDF‐TrFE) devices are used as non‐volatile memory cells and ground‐ and bit‐line select transistors, respectively. Electrical simulations reveal that the flexible printed organic NAND flash can be possible to program, read, and erase all memory cells in the memory array repeatedly without affecting the non‐selected memory cells.     

Fingerprint‐Inspired Conducting Hierarchical Wrinkles for Energy‐Harvesting E‐Skin

In the field of bionics, sophisticated and multifunctional electronic skins with a mechanosensing function that are inspired by nature are developed. Here, an energy‐harvesting electronic skin (energy‐E‐skin), i.e., a pressure sensor with energy‐harvesting functions is demonstrated, based on fingerprint‐inspired conducting hierarchical wrinkles. The conducting hierarchical wrinkles, fabricated via 2D stretching and subsequent Ar plasma treatment, are composed of polydimethylsiloxane (PDMS) wrinkles as the primary microstructure and embedded Ag nanowires (AgNWs) as the secondary nanostructure. The structure and resistance of the conducting hierarchical wrinkles are deterministically controlled by varying the stretching direction, Ar plasma power, and treatment time. This hierarchical‐wrinkle‐based conductor successfully harvests mechanical energy via contact electrification and electrostatic induction and also realizes self‐powered pressure sensing. The energy‐E‐skin delivers an average output power of 3.5 mW with an open‐circuit voltage of 300 V and a short‐circuit current of 35 µA; this power is sufficient to drive commercial light‐emitting diodes and portable electronic devices. The hierarchical‐wrinkle‐based conductor is also utilized as a self‐powered tactile pressure sensor with a sensitivity of 1.187 mV Pa^‐1 in both contact‐separation mode and the single‐electrode mode. The proposed energy‐E‐skin has great potential for use as a next‐generation multifunctional artificial skin, self‐powered human–machine interface, wearable thin‐film power source, and so on.     

Ultrastretchable Helical Conductive Fibers Using Percolated Ag Nanoparticle Networks Encapsulated by Elastic Polymers with High Durability in Omnidirectional Deformations for Wearable Electronics

Stretchable interconnects with invariable conductivity and complete elasticity, which return to their original shape without morphological hysteresis, are attractive for the development of stretchable electronics. In this study, a polydimethylsiloxane‐coated multifilament polyurethane‐based helical conductive fiber is developed. The stretchable helical fibers exhibit remarkable electrical performance under stretching, negligible electrical and mechanical hysteresis, and high electrical reliability under repetitive deformation (10 000 cycles of stretching with 100% strain). The resistance of the helical fibers barely increases until the applied strain reaches the critical strain, which is based on the helical diameter of each fiber. According to finite element analysis, uniform stress distribution is maintained in the helical fibers even under full stretching, owing to the fibers' true helix structure. In addition, the stretchable helical fibers have the ability to completely return to their original shapes even after being fully compressed in the vertical direction. Cylinder‐shaped connecting pieces made using 3D printing are designed for stable connection between the helical fibers and commercial components. A deformable light‐emitting diode (LED) array and biaxially stretchable LED display are fabricated using helical fibers. A skin‐mountable band‐type oximeter with helical fiber‐based electrodes is also fabricated and used to demonstrate real‐time detection of cardiac activities and analysis of brain activities.     

Stretchable‐Rubber‐Based Triboelectric Nanogenerator and Its Application as Self‐Powered Body Motion Sensors

A stretchable‐rubber‐based (SR‐based) triboelectric nanogenerator (TENG) is developed that can not only harvest energy but also serve as self‐powered multifunctional sensors. It consists of a layer of elastic rubber and a layer of aluminum film that acts as the electrode. By stretching and releasing the rubber, the changes of triboelectric charge distribution/density on the rubber surface relative to the aluminum surface induce alterations to the electrical potential of the aluminum electrode, leading to an alternating charge flow between the aluminum electrode and the ground. The unique working principle of the SR‐based TENG is verified by the coupling of numerical calculations and experimental measurements. A comprehensive study is carried out to investigate the factors that may influence the output performance of the SR‐based TENG. By integrating the devices into a sensor system, it is capable of detecting movements in different directions. Moreover, the SR‐based TENG can be attached to a human body to detect diaphragm breathing and joint motion. This work largely expands the applications of TENG not only as effective power sources but also as active sensors; and opens up a new prospect in future electronics.     

Infrared Detection Using Transparent and Flexible Field‐Effect Transistor Array with Solution Processable Nanocomposite Channel of Reduced Graphene Oxide and P(VDF‐TrFE)

Photodetectors using optically responsive graphene (Gr) or reduced graphene oxide (R‐GO) on rigid substrates have showed promising results for detection of broad band light including infrared (IR). However, there have been only a few reports on Gr or R‐GO photodetectors with new functionalities such as optical transparency and/or flexibility. Herein, a new kind of transparent and flexible IR photodetector is presented using a field‐effect transistor (FET) structure in which an IR‐responsive nanocomposite layer of R‐GO and poly(vinylidenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) is employed as the channel. The IR photodetector exhibits high IR responsivity, stability, and reproducibility under mechanical strain and ambient conditions. In addition, the capability of measuring the distribution of responses from each device in the transparent and flexible nanocomposite FET array under IR radiation from the human body is also demonstrated. Therefore, the development of a flexible IR photodetector with high responsivity, transparency, ease of integration, and stability in an ambient environment is a suitable alternative approach for achieving the stable monitoring of IR in many flexible and transparent electronic systems.