On the Mechanism of Cuprate Crystal Growth: The Role of Mixed Metal Carbonates

The mechanism of formation of the superconductor Bi₂Sr₂CaCu₂O_8+x (Bi‐2212) has been an open question since its discovery in 1988. By controlling crystal growth through the use of biopolymers as multivalent cation chelating agents, it is demonstrated through X‐ray diffraction and thermogravimetric analysis, that it is the formation of a mixed metal carbonate eutectic that promotes the formation of the target phase. X‐ray diffraction experiments, supported by infrared spectroscopy, identify this phase as (Sr_1?x Ca _x )CO₃. This knowledge allows to further reduce the eutectic melting point by the incorporation of a biopolymer rich in potassium ions, resulting in the scalable formation of Bi‐2212 at a temperature 50 °C lower than has been achieved previously.     

Nanoscale Insight Into Lead‐Free BNT‐BT‐xKNN

Piezoresponse force microscopy (PFM) is used to afford insight into the nanoscale electromechanical behavior of lead‐free piezoceramics. Materials based on Bi_1/2Na_1/2TiO₃ exhibit high strains mediated by a field‐induced phase transition. Using the band excitation technique the initial domain morphology, the poling behavior, the switching behavior, and the time‐dependent phase stability in the pseudo‐ternary system (1–x)(0.94Bi_1/2Na_1/2TiO₃‐0.06BaTiO₃)‐xK_0.5Na_0.5NbO₃ (0 <= x <= 18 mol%) are revealed. In the base material (x = 0 mol%), macroscopic domains and ferroelectric switching can be induced from the initial relaxor state with sufficiently high electric field, yielding large macroscopic remanent strain and polarization. The addition of KNN increases the threshold field required to induce long range order and decreases the stability thereof. For x = 3 mol% the field‐induced domains relax completely, which is also reflected in zero macroscopic remanence. Eventually, no long range order can be induced for x >= 3 mol%. This PFM study provides a novel perspective on the interplay between macroscopic and nanoscopic material properties in bulk lead‐free piezoceramics.     

Ultrahigh Energy‐Storage Density in NaNbO3‐Based Lead‐Free Relaxor Antiferroelectric Ceramics with Nanoscale Domains

Dielectric energy‐storage capacitors have received increasing attention in recent years due to the advantages of high voltage, high power density, and fast charge/discharge rates. Here, a new environment‐friendly 0.76NaNbO₃–0.24(Bi_0.5Na_0.5)TiO₃ relaxor antiferroelectric (AFE) bulk ceramic is studied, where local orthorhombic Pnma symmetry (R phase) and nanodomains are observed based on high‐resolution transmission electron microscopy, selected area electron diffraction, and in/ex situ synchrotron X‐ray diffraction. The orthorhombic AFE R phase and relaxor characteristics synergistically contribute to the record‐high energy‐storage density W_rec of ≈12.2 J cm^?3 and acceptable energy efficiency η ≈ 69% at 68 kV mm^?1, showing great advantages over currently reported bulk dielectric ceramics. In comparison with normal AFEs, the existence of large random fields in the relaxor AFE matrix and intrinsically high breakdown strength of NaNbO₃‐based compositions are thought to be responsible for the observed energy‐storage performances. Together with the good thermal stability of W_rec (>7.4 J cm^?3) and η (>73%) values at 45 kV mm^?1 up to temperature of 200 °C, it is demonstrated that NaNbO₃‐based relaxor AFE ceramics will be potential lead‐free dielectric materials for next‐generation pulsed power capacitor applications.     

Ultrahigh Responsivity of Ternary Sb–Bi–Se Nanowire Photodetectors

High‐quality single‐crystalline ternary (Sb_1‐xBi_x)₂Se₃ nanowires (NWs) (x = 0–0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb_1‐xBi_x)₂Se₃ NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb_0.44Bi_0.56)₂Se₃ NW photodetector reach as high as ≈8261.4 A/W and ≈1.6 × 10⁶ %, respectively. Those excellent performances unambiguously demonstrate that Sb–Bi–Se NWs are promising for the utilizations of high‐sensitivity and high‐speed photodetectors and photoelectronic switches.     

High‐Performance Manganese Hexacyanoferrate with Cubic Structure as Superior Cathode Material for Sodium‐Ion Batteries

Sodium manganese hexacyanoferrate (Na_xMnFe(CN)₆) is one of the most promising cathode materials for sodium‐ion batteries (SIBs) due to the high voltage and low cost. However, its cycling performance is limited by the multiple phase transitions during Na⁺ insertion/extraction. In this work, a facile strategy is developed to synthesize cubic and monoclinic structured Na_xMnFe(CN)₆, and their structure evolutions are investigated through in situ X‐ray diffraction (XRD), ex situ Raman, and X‐ray photoelectron spectroscopy (XPS) characterizations. It is revealed that the monoclinic phase undergoes undesirable multiple two‐phase reactions (monoclinic ? cubic ? tetragonal) due to the large lattice distortions caused by the Jahn–Teller effects of Mn³⁺, resulting in poor cycling performances with 38% capacity retention. The cubic Na_xMnFe(CN)₆ with high structural symmetry maintains the structural stability during the repeated Na⁺ insertion/extraction process, demonstrating impressive electrochemical performances with specific capacity of ≈120 mAh g^?1 at 3.5 V (vs Na/Na⁺), capacity retention of ≈70% over 500 cycles at 200 mA g^?1. In addition, the TiO₂//C‐MnHCF full battery is fabricated with an energy density of 111 Wh kg^?1, suggesting the great potential of cubic Na_xMnFe(CN)₆ for practical energy storage applications.     

Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Effects of Bi-doping in PbTe liquid-phase epitaxial layers grown by the TDM-CVP have been investigated. For Bi concentration in the solution, x_Bi, lower than 0.2 at.%, Hall mobility is low. In contrast, for x_Bi>0.2 at.%, Hall mobility is high, while carrier concentration is in the range 10¹⁷ cm⁻³. However, ICP emission analysis shows that, for x_Bi=1.0 at.%, Bi concentration in epitaxial layer is N_Bi=2.3–2.7×10¹⁹ cm⁻³.These results indicate that Bi behaves not only as a donor but also as an acceptor; the nearest neighbor or very near DA pairs are formed. Carrier concentration for Bi-doped layers takes a minimum value at a Te vapor pressure of 2.2×10⁻⁵ Torr for growth temperature 470°C, which is coincident with that of the undoped PbTe. And broad contact pn junctions with highly Bi-doped layers easily cause laser emission compared to undoped junctions. The result suggests that the nearest lattice site Bi–Bi DA pairs behave as strong radiative centers in PbTe.     

Ti‐Doping to Reduce Conductivity in Bi0.85Nd0.15FeO3 Ceramics

In 2009, Karimi et al. reported that Bi_1‐xNd_xFeO₃ 0.15 ≤ x ≤ 0.25 exhibited a PbZrO₃ (PZ)‐like structure. These authors presented some preliminary electrical data for the PZ‐like composition but noted that the conductivity was too high to obtain radio‐frequency measurements representative of the intrinsic properties. In this study, Bi_0.85Nd_0.15Fe_1‐yTi_yO₃ (0 ≤ y ≤ 0.1) were investigated, in which Ti acted as a donor dopant on the B‐site. In contrast to the original study of Karimi et al., X‐ray diffraction (XRD) of Bi_0.85Nd_0.15FeO₃ revealed peaks which were attributed to a mixture of PZ‐like and rhombohedral structures. However, as the Ti (0 < y ≤ 0.05) concentration increased, the rhombohedral peaks disappeared and all intensities were attributed to the PZ‐like phase. For y = 0.1, broad XRD peaks indicated a significant decrease in effective diffracting volume. Electron diffraction confirmed that the PZ‐like phase was dominant for y ≤ 0.05, but for y = 0.1, an incommensurate structure was present, consistent with the broadened XRD peaks. The substitution of Fe³⁺ by Ti⁴⁺ decreased the dielectric loss at room temperature from >0.3 to <0.04 for all doped compositions, with a minimum (0.015) observed for y = 0.03. The decrease in dielectric loss was accompanied by a decrease in the room temperature bulk conductivity from ～1 mS cm^?1 to <1 μS cm^?1 and an increase in bulk activation energy from 0.29 to >1 eV. Plots of permittivity (?_r) versus temperature for 0.01 ≤ y ≤ 0.05 revealed a step rather than a peak in ?_r on heating at the same temperature determined for the antiferroelectric–paraelectric phase transition by differential scanning calorimetry. Finally, large electric fields were applied to all doped samples which resulted in a linear dependence of polarisation on the electric field similar to that obtained for PbZrO₃ ceramics under equivalent experimental conditions.     

Copper Sulfide (CuxS) Nanowire‐in‐Carbon Composites Formed from Direct Sulfurization of the Metal‐Organic Framework HKUST‐1 and Their Use as Li‐Ion Battery Cathodes

Li‐ion batteries containing cost‐effective, environmentally benign cathode materials with high specific capacities are in critical demand to deliver the energy density requirements of electric vehicles and next‐generation electronic devices. Here, the phase‐controlled synthesis of copper sulfide (Cu_xS) composites by the temperature‐controlled sulfurization of a prototypal Cu metal‐organic framework (MOF), HKUST‐1 is reported. The tunable formation of different Cu_xS phases within a carbon network represents a simple method for the production of effective composite cathode materials for Li‐ion batteries. A direct link between the sulfurization temperature of the MOF and the resultant Cu_xS phase formed with more Cu‐rich phases favored at higher temperatures is further shown. The Cu_xS/C samples are characterized through X‐ray diffraction (XRD), thermogravimetric analysis (TGA), transmission electron microscopy, and energy dispersive X‐ray spectroscopy (EDX) in addition to testing as Li‐ion cathodes. It is shown that the performance is dependent on both the Cu_xS phase and the crystal morphology with the Cu_1.8S/C‐500 material as a nanowire composite exhibiting the best performance, showing a specific capacity of 220 mAh g^?1 after 200 charge/discharge cycles.     

Bifurcated Polarization Rotation in Bismuth‐Based Piezoelectrics

ABO₃ perovskite‐type solid solutions display a large variety of structural and physical properties, which can be tuned by chemical composition or external parameters such as temperature, pressure, strain, electric, or magnetic fields. Some solid solutions show remarkably enhanced physical properties including colossal magnetoresistance or giant piezoelectricity. It has been recognized that structural distortions, competing on the local level, are key to understanding and tuning these remarkable properties, yet, it remains a challenge to experimentally observe such local structural details. Here, from neutron pair‐distribution analysis, a temperature‐dependent 3D atomic‐level model of the lead‐free piezoelectric perovskite Na_0.5Bi_0.5TiO₃ (NBT) is reported. The statistical analysis of this model shows how local distortions compete, how this competition develops with temperature, and, in particular, how different polar displacements of Bi³⁺ cations coexist as a bifurcated polarization, highlighting the interest of Bi‐based materials in the search for new lead‐free piezoelectrics.     

FeSe2‐Decorated Bi2Se3 Nanosheets Fabricated via Cation Exchange for Chelator‐Free 64Cu‐Labeling and Multimodal Image‐Guided Photothermal‐Radiation Therapy

Multifunctional theranostic agents have become rather attractive to realize image‐guided combination cancer therapy. Herein, a novel method is developed to synthesize Bi₂Se₃ nanosheets decorated with mono‐dispersed FeSe₂ nanoparticles (FeSe₂/Bi₂Se₃) for tetra‐modal image‐guided combined photothermal and radiation tumor therapy. Interestingly, upon addition of Bi(NO₃)₃, pre‐made FeSe₂ nanoparticles via cation exchange would be gradually converted into Bi₂Se₃ nanosheets, on which remaining FeSe₂ nanoparticles are decorated. The yielded FeSe₂/Bi₂Se₃ composite‐nanostructures are then modified with polyethylene glycol (PEG). Taking advantages of the high r ₂ relaxivity of FeSe₂, the X‐ray attenuation ability of Bi₂Se₃, the strong near‐infrared optical absorbance of the whole nanostructure, as well as the chelate‐free radiolabeling of ⁶⁴Cu on FeSe₂/Bi₂Se₃‐PEG, in vivo magnetic resonance/computer tomography/photoacoustic/position emission tomography multimodal imaging is carried out, revealing efficient tumor homing of FeSe₂/Bi₂Se₃‐PEG after intravenous injection. Utilizing the intrinsic physical properties of FeSe₂/Bi₂Se₃‐PEG, in vivo photothermal and radiation therapy to achieve synergistic tumor destruction is then realized, without causing obvious toxicity to the treated animals. This work presents a unique method to synthesize composite‐nanostructures with highly integrated functionalities, promising not only for nano‐biomedicine but also potentially for other different nanotechnology fields.     

Dental Resin Monomer Enables Unique NbO2/Carbon Lithium‐Ion Battery Negative Electrode with Exceptional Performance

Niobium dioxide (NbO₂) features a high theoretical capacity and an outstanding electron conductivity, which makes it a promising alternative to the commercial graphite negative electrode. However, studies on NbO₂ based lithium‐ion battery negative electrodes have been rarely reported. In the present work, NbO₂ nanoparticles homogeneously embedded in a carbon matrix are synthesized through calcination using a dental resin monomer (bisphenol A glycidyl dimethacrylate, Bis‐GMA) as the solvent and a carbon source and niobium ethoxide (NbETO) as the precursor. It is revealed that a low Bis‐GMA/NbETO mass ratio (from 1:1 to 1:2) enables the conversion of Nb (V) to Nb (IV) due to increased porosity induced by an alcoholysis reaction between the NbETO and Bis‐GMA. The as‐prepared NbO₂/carbon nanohybrid delivers a reversible capacity of 225 mAh g^?1 after 500 cycles at a 1 C rate with a Coulombic efficiency of more than 99.4% in the cycles. Various experimental and theoretical approaches including solid state nuclear magnetic resonance, ex situ X‐ray diffraction, differential electrochemical mass spectrometry, and density functional theory are utilized to understand the fundamental lithiation/delithiation mechanisms of the NbO₂/carbon nanohybrid. The results suggest that the NbO₂/carbon nanohybrid bearing high capacity, long cycle life, and low gas evolution is promising for lithium storage applications.     

Diffused Phase Transition Boosts Thermal Stability of High‐Performance Lead‐Free Piezoelectrics

High piezoelectricity of (K,Na)NbO₃ (KNN) lead‐free materials benefits from a polymorphic phase transition (PPT) around room temperature, but its temperature sensitivity has been a bottleneck impeding their applications. It is found that good thermal stability can be achieved in CaZrO₃‐modified KNN lead‐free piezoceramics, in which the normalized strain d ₃₃* almost keeps constant from room temperature up to 140 °C. In situ synchrotron X‐ray diffraction experiments combined with permitivity measurements disclose the occurrence of a new phase transformation under an electrical field, which extends the transition range between tetragonal and orthorhombic phases. It is revealed that such an electrically enhanced diffused PPT contributed to the boosted thermal stability of KNN‐based lead‐free piezoceramics with high piezoelectricity. The present approach based on phase engineering should also be effective in endowing other lead‐free piezoelectrics with high piezoelectricity and good temperature stability.     

Colossal X‐Ray‐Induced Persistent Photoconductivity in Current‐Perpendicular‐to‐Plane Ferroelectric/Semiconductor Junctions

Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin‐film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO₃/Sm_0.1Bi_0.9FeO₃/Pt junctions with a current‐perpendicular‐to‐plane geometry, a colossal X‐ray‐induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X‐ray‐induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon‐enhanced carrier density/mobility in the current‐in‐plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X‐ray sensing and imaging applications.     

Structural characterization of GaAs<Subscript>1−x</Subscript>Bi<Subscript>x</Subscript> alloy by rutherford backscattering spectrometry combined with the channeling technique

Rutherford backscattering spectrometry (RBS) combined with the channeling technique has been applied to a GaAs_1−xBi_x epilayer to investigate concentration and lattice location of Bi atoms and crystalline quality of the epilayer. The metastable GaAs_1−xBi_x alloy layer was grown on a GaAs substrate at a temperature as low as 365°C. The GaBi mole fraction obtained was 2.6 ± 0.2%. Angular scans for [100] and [111] crystal directions reveal that the incorporated Bi atoms exactly occupy substitutional sites in the GaAs crystal lattice. Crystal perfection of the GaAs_1−xBi_x metastable alloy is fairly good in spite of the low growth temperature.     

Stoichiometry Controlled,Single‐Crystalline Bi2Te3 Nanowires for Transport in the Basal Plane

Thermoelectric Bi₂Te₃ based bulk materials are widely used for solid‐state refrigeration and power‐generation at room temperature. For low‐dimensional and nanostructured thermoelectric materials an increase of the thermoelectric figure of merit ZT is predicted due to quantum confinement and phonon scattering at interfaces. Therefore, the fabrication of Bi₂Te₃ nanowires, thin films, and nanostructured bulk materials has become an important and active field of research. Stoichiometric Bi₂Te₃ nanowires with diameters of 50–80 nm and a length of 56 μm are grown by a potential‐pulsed electrochemical deposition in a nanostructured Al₂O₃ matrix. By transmission electron microscopy (TEM), dark‐field images together with electron diffraction reveal single‐crystalline wires, no grain boundaries can be detected. The stoichiometry control of the wires by high‐accuracy, quantitative enegy‐dispersive X‐ray spectroscopy (EDX) in the TEM instrument is of paramount importance for successfully implementing the growth technology. Combined electron diffraction and EDX spectroscopy in the TEM unambiguously prove the correct crystal structure and stoichiometry of the Bi₂Te₃ nanowires. X‐ray and electron diffraction reveal growth along the [110] and [210] directions and the c axis of the Bi₂Te₃ structure lies perpendicular to the wire axis. For the first time single crystalline, stoichiometric Bi₂Te₃ nanowires are grown that allow transport in the basal plane without being affected by grain boundaries.     

Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure

Experimental results of a study concerned with solid-phase reactions and phase transformations in a Bi/Se nanoscale film structure under heat treatment in vacuum are presented. Nanocrystalline Bi2Se3, BiSe, and Bi₄Se₃ films are obtained for the first time by solid-phase synthesis at various ratios between the Bi and Se layer thicknesses. The phase-transformation temperatures at which Se, BiSe, and Bi4Se3 crystalline phases are formed are determined. The average crystallite sizes in the Bi₂Se₃, BiSe, and Bi₄Se₃ films are found to be 21, 23, and 33 nm, respectively.     

Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi1–δFeO3 Interfaces

This work reports a resistive switching effect observed at rectifying Pt/Bi_1–δFeO₃ interfaces and the impact of Bi deficiencies on its characteristics. Since Bi deficiencies provide hole carriers in BiFeO₃, Bi‐deficient Bi_1–δFeO₃ films act as a p‐type semiconductor. As the Bi deficiency increased, a leakage current at Pt/Bi_1–δFeO₃ interfaces tended to increase, and finally, rectifying and hysteretic current–voltage (I–V) characteristics were observed. In I–V characteristics measured at a voltage‐sweep frequency of 1 kHz, positive and negative current peaks originating from ferroelectric displacement current were observed under forward and reverse bias prior to set and reset switching processes, respectively, suggesting that polarization reversal is involved in the resistive switching effect. The resistive switching measurements in a pulse‐voltage mode revealed that the switching speed and switching ratio can be improved by controlling the Bi deficiency. The resistive switching devices showed endurance of >10⁵ cycles and data retention of >10⁵ s at room temperature. Moreover, unlike conventional resistive switching devices made of metal oxides, no forming process is needed to obtain a stable resistive switching effect in the ferroelectric resistive switching devices. These results demonstrate promising prospects for application of the ferroelectric resistive switching effect at Pt/Bi_1–δFeO₃ interfaces to nonvolatile memory.     

Origin of a Tetragonal BiFeO3 Phase with a Giant c/a Ratio on SrTiO3 Substrates

A tetragonal BiFeO₃ phase with giant c/a of approximately 1.25 has been of great interest recently as it potentially possesses a giant polarization and much enhanced electromechanical response. This super‐tetragonal phase is known to be a stable phase only under high compressive strains of above approximately 4.5%, according to first principle calculations. However, in previous work, this super‐tetragonal BiFeO₃ phase was obtained in films deposited at high growth rate on SrTiO₃ substrates with compressive strain of only around 1.5%. By detailed structure analysis using high resolution synchrotron X‐ray diffraction, atomic force microscopy, and transmission electron microscopy, the parasitic β‐Bi₂O₃ phase is identified as the origin inducing the formation of super‐tetragonal BiFeO₃ phase on SrTiO₃ substrates. In addition, ab initio calculations also confirm that this super‐tetragonal phase is more stable than monoclinic phase when Bi₂O₃ is present. Using Bi₂O₃ as a buffer layer, an alternative route, not involving strain engineering, is proposed to stabilize this promising super‐tetragonal BiFeO₃ phase at low growth rates.     

Enhanced Ionic Conductivity in Ce0.8Sm0.2O1.9: Unique Effect of Calcium Co‐doping

In order to identify new oxide ion‐conducting materials in the ceria family of oxides, the unique effect of co‐doping is explored and a novel series of Ce_0.8Sm_0.2–xCa_xO_2–δ compositions is identified that have enhanced properties compared to the single‐doped Ce_0.8Sm_0.2O_1.9 and Ce_0.8Ca_0.2O_1.9 compositions. Moreover, the superior characteristics of the co‐doped Ce_0.8Sm_0.2–xCa_xO_2–δ powders prepared by the mixed‐fuel process aid in obtaining 98 % dense ceramics upon sintering at 1200 °C for 6 h. Though a linear increase in conductivity is observed by replacing Sm with Ca, the composition with the maximum amount of Ca and the minimum amount of Sm exhibits a significant improvement in properties compared to the rest in the series. The composition Ce_0.80Sm_0.05Ca_0.15O_2–δ exhibits a conductivity as high as 1.22 × 10^–1 S cm^–1 at 700 °C with minimum activation energy (0.56 eV) and a superior chemical stability to reduction compared to any of the hitherto known (CaSm) compositions. The absence of Ce^III, confirmed both from X‐ray photoelectron spectroscopy and X‐ray absorption spectroscopy, strongly suggests that the observed increase in conductivity is solely due to the oxide ion conductivity and not due to the partial electronic contribution arising from the presence of Ce^III and Ce^IV. To conclude, the experimental results on the Ce_0.8Sm_0.2–xCa_xO_2–δ series underscore the unique effect of calcium co‐doping in identifying a cost‐effective new composition, with a remarkably high conductivity and enhanced chemical stability to reduction, for technological applications.     

A New Phase Boundary in (Bi1/2Na1/2)TiO3−BaTiO3 Revealed via a Novel Method of Electron Diffraction Analysis

A new phase boundary is revealed in (1–x)(Bi_1/2Na_1/2)TiO₃?xBaTiO₃, the most extensively studied lead‐free piezoelectric solid solution. This discovery results from a novel method of electron diffraction analysis, which allows the precise determination of oxygen octahedra tilting in multi‐domain perovskite ferroelectrics. The study using this method supports the recently proposed Cc symmetry for pure (Bi_1/2Na_1/2)TiO₃, and, more importantly, indicates the crystal structure evolves into the R3c symmetry with the addition of BaTiO₃, forming a Cc/R3c phase boundary at x = 3–4%. In the poling field E_pol versus composition x phase diagram for polycrystalline ceramics, this phase boundary exists with E_pol below 5.5 kV mm^?1; the Cc phase is transformed to the R3c phase during poling at higher fields. The results reported here provide the microstructural origin for the previously unexplained strain behavior and clarify the low‐BaTiO₃‐content phase relationship in this popular lead‐free piezoelectric system.