Efficient Near‐Infrared Light‐Emitting Diodes based on In(Zn)As–In(Zn)P–GaP–ZnS Quantum Dots

Near‐infrared (NIR) lighting plays an increasingly important role in new facial recognition technologies and eye‐tracking devices, where covert and nonvisible illumination is needed. In particular, mobile or wearable gadgets that employ these technologies require electronic lighting components with ultrathin and flexible form factors that are currently unfulfilled by conventional GaAs‐based diodes. Colloidal quantum dots (QDs) and emerging perovskite light‐emitting diodes (LEDs) may fill this gap, but generally employ restricted heavy metals such as cadmium or lead. Here, a new NIR‐emitting diode based on heavy‐metal‐free In(Zn)As–In(Zn)P–GaP–ZnS quantum dots is reported. The quantum dots are prepared with a giant shell structure, enabled by a continuous injection synthesis approach, and display intense photoluminescence at 850 nm with a high quantum efficiency of 75%. A postsynthetic ligand exchange to a shorter‐chain 1‐mercapto‐6‐hexanol (MCH) affords the QDs with processability in polar solvents as well as an enhanced charge‐transport performance in electronic devices. Using solution‐processing methods, an ITO/ZnO/PEIE/QD/Poly‐TPD/MoO₃/Al electroluminescent device is fabricated and a high external quantum efficiency of 4.6% and a maximum radiance of 8.2 W sr^?1 m^?2 are achieved. This represents a significant leap in performance for NIR devices employing a colloidal III–V semiconductor QD system, and may find significant applications in emerging consumer electronic products.     

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiOx Hole‐Injection Layers with a High and Stable Work Function

Solution‐processed oxide thin films are actively pursued as hole‐injection layers (HILs) in quantum‐dot light‐emitting diodes (QLEDs), aiming to improve operational stability. However, device performance is largely limited by inefficient hole injection at the interfaces of the oxide HILs and high‐ionization‐potential organic hole‐transporting layers. Solution‐processed NiO_x films with a high and stable work function of ≈5.7 eV achieved by a simple and facile surface‐modification strategy are presented. QLEDs based on the surface‐modified NiO_x HILs show driving voltages of 2.1 and 3.3 V to reach 1000 and 10 000 cd m^?2, respectively, both of which are the lowest among all solution‐processed LEDs and vacuum‐deposited OLEDs. The device exhibits a T₉₅ operational lifetime of ≈2500 h at an initial brightness of 1000 cd m^?2, meeting the commercialization requirements for display applications. The results highlight the potential of solution‐processed oxide HILs for achieving efficient‐driven and long‐lifetime QLEDs.     

Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer

In the study of hybrid quantum dot light‐emitting diodes (QLEDs), even for state‐of‐the‐art achievement, there still exists a long‐standing charge balance problem, i.e., sufficient electron injection versus inefficient hole injection due to the large valence band offset of quantum dots (QDs) with respect to the adjacent carrier transport layer. Here the dedicated design and synthesis of high luminescence Zn_1?x Cd_xSe/ZnSe/ZnS QDs is reported by precisely controlled shell growth, which have matched energy level with the adjacent hole transport layer in QLEDs. As emitters, such Zn_1?xCd_xSe‐ based QLEDs exhibit peak external quantum efficiencies (EQE) of up to 30.9%, maximum brightness of over 334 000 cd m^?2, very low efficiency roll‐off at high current density (EQE ≈25% @ current density of 150 mA cm^?2), and operational lifetime extended to ≈1 800 000 h at 100 cd m^?2. These extraordinary performances make this work the best among all solution‐processed QLEDs reported in literature so far by achieving simultaneously high luminescence and balanced charge injection. These major advances are attributed to the combination of an intermediate ZnSe layer with an ultrathin ZnS outer layer as the shell materials and surface modification with 2‐ethylhexane‐1‐thiol, which can dramatically improve hole injection efficiency and thus lead to more balanced charge injection.     

Organometal Halide Perovskite Quantum Dot Light‐Emitting Diodes

Organometal halide perovskites quantum dots (OHP‐QDs) with bright, color‐tunable, and narrow‐band photoluminescence have significant advantages in display, lighting, and laser applications. Due to sparse concentrations and difficulties in the enrichment of OHP‐QDs, production of large‐area uniform films of OHP‐QDs is a challenging task, which largely impedes their use in electroluminescence devices. Here, a simple dip‐coating method has been reported to effectively fabricate large‐area uniform films of OHP‐QDs. Using this technique, multicolor OHP‐QDs light‐emitting diodes (OQ‐LEDs) emitting in blue, blue‐green, green, orange, and red color have been successfully produced by simply tuning the halide composition or size of QDs. The blue, green, and red OQ‐LEDs exhibited, respectively, a maximum luminance of 2673, 2398, and 986 cd m^?2 at a current efficiency of 4.01, 3.72, and 1.52 cd A^?1, and an external quantum efficiency of 1.38%, 1.06%, and 0.53%, which are much better than most LEDs based on OHP films. The packaged OQ‐LEDs show long‐term stability in air (humidity ≈50%) for at least 7 d. The results demonstrate the great potential of the dip‐coating method to fabricate large‐area uniform films for various QDs. The high‐efficiency OQ‐LEDs also demonstrate the promising potential of OHP‐QDs for low‐cost display, lighting, and optical communication applications.     

Low Roll‐Off Perovskite Quantum Dot Light‐Emitting Diodes Achieved by Augmenting Hole Mobility

The external quantum efficiencies (EQEs) of perovskite quantum dot light‐emitting diodes (QD‐LEDs) are close to the out‐coupling efficiency limitation. However, these high‐performance QD‐LEDs still suffer from a serious issue of efficiency roll‐off at high current density. More injected carriers produce photons less efficiently, strongly suggesting the variation of ratio between radiative and non‐radiative recombination. An approach is proposed to balance the carrier distribution and achieve high EQE at high current density. The average interdot distance between QDs is reduced and this facilitates carrier transport in QD films and thus electrons and holes have a balanced distribution in QD layers. Such encouraging results augment the proportion of radiative recombination, make devices with peak EQE of 12.7%, and present a great device performance at high current density with an EQE roll‐off of 11% at 500 mA cm^?2 (the lowest roll‐off known so far) where the EQE is still over 11%.     

Transparent InP Quantum Dot Light‐Emitting Diodes with ZrO2 Electron Transport Layer and Indium Zinc Oxide Top Electrode

Because of outstanding optical properties and non‐vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs have shown excellent properties, but the eco‐friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD‐LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD‐LEDs with Cd‐free InP QDs as light emitting layer and inorganic ZrO₂ nanoparticles as electron transport layer. The QD‐LED with bottom emission structure shows the luminescence of 530 cd m^?2 and the current efficiency of 1 cd/A. To realize the transparent QD‐LED display, the two‐step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD‐LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work‐function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well‐known roll‐off phenomenon in QD‐LED devices.     

High Performance NIR OLEDs with Low Efficiency Roll-Off by Leveraging Os(II) Phosphors and Exciplex Co-Host

Near-infrared (NIR) organic-light emitting devices (OLEDs) with high radiance are useful for applications including invisible marking, communication, and biomedical imaging. However, performances of NIR OLEDs are typically limited by their severe efficiency roll-offs at high current density. Herein, three isoquinolinyl azolate based Os(II) complexes (Isq-1–3) with short radiative decay lifetime (in hundreds of ns), and photoluminescence with peak wavelengths > 745 nm and quantum yield up to 48% as doped thin films, are reported. Upon concomitant employment of exciplex-forming co-host (tris(4-carbazoyl-9-ylphenyl)amine and 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine), efficiency roll-off is greatly reduced, giving external quantum efficiency of 9.66% at a current density of 300 mA cm⁻². A maximum radiance over 170 W sr⁻¹ m⁻² is also achieved in devices based on Isq-2 and Isq-3.     

Exciplex‐Forming Co‐host for Organic Light‐Emitting Diodes with Ultimate Efficiency

Phosphorescent organic light‐emitting diodes (OLEDs) with ultimate efficiency in terms of the external quantum efficiency (EQE), driving voltage, and efficiency roll‐off are reported, making use of an exciplex‐forming co‐host. This exciplex‐forming co‐host system enables efficient singlet and triplet energy transfers from the host exciplex to the phosphorescent dopant because the singlet and triplet energies of the exciplex are almost identical. In addition, the system has low probability of direct trapping of charges at the dopant molecules and no charge‐injection barrier from the charge‐transport layers to the emitting layer. By combining all these factors, the OLEDs achieve a low turn‐on voltage of 2.4 V, a very high EQE of 29.1% and a very high power efficiency of 124 lm W^?1. In addition, the OLEDs achieve an extremely low efficiency roll‐off. The EQE of the optimized OLED is maintained at more than 27.8%, up to 10 000 cd m^?2.     

Over 100 cd A−1 Efficient Quantum Dot Light‐Emitting Diodes with Inverted Tandem Structure

Quantum dot light‐emitting diodes (QLEDs) with tandem structure are promising candidates for future displays because of their advantages of pure emission color, long lifetime, high brightness, and high efficiency. To obtain efficient QLEDs, a solution‐processable interconnecting layer (ICL) based on poly(3, 4‐ethylenedioxythiophene)/polystyrene sulfonate/ZnMgO is developed. With the proposed ICL, all‐solution‐processed, inverted, tandem QLEDs are demonstrated with high current efficiency (CE) of 57.06 cd A^?1 and external quantum efficiency (EQE) of 13.65%. By further optimizing the fabrication processes and using a hybrid deposition technique, the resultant tandem QLEDs exhibit a very high CE over 100 cd A^?1 and an impressive EQE over 23%, which are the highest values ever reported and are comparable with those of the state‐of‐the‐art phosphorescent organic LEDs. Moreover, the efficiency roll‐off, a notorious phenomenon in phosphorescent LEDs, is significantly reduced in the developed QLEDs. For example, even at a very high brightness over 200 000 cd m^?2, the tandem QLEDs can still maintain a high CE of 96.47 cd A^?1 and an EQE of 22.62%. The proposed ICL and the developed fabrication methods allow for realization of very efficient tandem QLEDs for next generation display and lighting applications.     

High‐Throughput Combinatorial Optimizations of Perovskite Light‐Emitting Diodes Based on All‐Vacuum Deposition

Light‐emitting diodes (LEDs) based on lead halide perovskites demonstrate outstanding optoelectronic properties and are strong competitors for display and lighting applications. While previous halide perovskite LEDs are mainly produced via solution processing, here an all‐vacuum processing method is employed to construct CsPbBr₃ LEDs because vacuum processing exhibits high reliability and easy integration with existing OLED facilities for mass production. The high‐throughput combinatorial strategies are further adopted to study perovskite composition, annealing temperature, and functional layer thickness, thus significantly speeding up the optimization process. The best rigid device shows a current efficiency (CE) of 4.8 cd A^?1 (EQE of 1.45%) at 2358 cd m^?2, and best flexible device shows a CE of 4.16 cd A^?1 (EQE of 1.37%) at 2012 cd m^?2 with good bending tolerance. Moreover, by choosing NiO_x as the hole‐injection layer, the CE is improved to 10.15 cd A^?1 and EQE is improved to a record of 3.26% for perovskite LEDs produced by vacuum deposition. The time efficient combinatorial approaches can also be applied to optimize other perovskite LEDs.     

Exciton‐Adjustable Interlayers for High Efficiency,Low Efficiency Roll‐Off,and Lifetime Improved Warm White Organic Light‐Emitting Diodes (WOLEDs) Based on a Delayed Fluorescence Assistant Host

Recently, a new route to achieve 100% internal quantum efficiency white organic light‐emitting diodes (WOLEDs) is proposed by utilizing noble‐metal‐free thermally activated delayed fluorescence (TADF) emitters due to the radiative contributions of triplet excitons by effective reverse intersystem crossing. However, a systematic understanding of their reliability and internal degradation mechanisms is still deficient. Here, it demonstrates high performance and operational stable purely organic fluorescent WOLEDs consisting of a TADF assistant host via a strategic exciton management by multi‐interlayers. By introducing such interlayers, carrier recombination zone could be controlled to suppress the generally unavoidable quenching of long‐range triplet excitons, successfully achieving remarkable external quantum efficiency of 15.1%, maximum power efficiency of 48.9 lm W⁻¹, and extended LT50 lifetime (time to 50% of initial luminance of 1000 cd m⁻²) exceeding 2000 h. To this knowledge, this is the first pioneering work for realizing high efficiency, low efficiency roll‐off, and operational stable WOLEDs based on a TADF assistant host. The current findings also indicate that broadening the carrier recombination region in both interlayers and yellow emitting layer as well as restraining exciplex quenching at carrier blocking interface make significant roles on reduced efficiency roll‐off and enhanced operational lifetime.     

Highly Efficient Green ZnAgInS/ZnInS/ZnS QDs by a Strong Exothermic Reaction for Down‐Converted Green and Tripackage White LEDs

Highly efficient bright green‐emitting Zn?Ag?In?S (ZAIS)/Zn?In?S (ZIS)/ZnS alloy core/inner‐shell/shell quantum dots (QDs) are synthesized using a multistep hot injection method with a highly concentrated zinc acetate dihydrate precursor. ZAIS/ZIS/ZnS QD growth is realized via five sequential steps: a core growth process, a two‐step alloying–shelling process, and a two‐step shelling process. To enhance the photoluminescence quantum yield (PLQY), a ZIS inner‐shell is synthesized and added with a band gap located between the ZAIS alloy‐core and ZnS shell using a strong exothermic reaction. The synthesized ZAIS/ZIS/ZnS QDs shows a high PLQY of 87% with peak wavelength of 501 nm. Tripackage white down‐converted light‐emitting diodes (DC‐LEDs) are realized using an InGaN blue (B) LED, a green (G) ZAIS/ZIS/ZS QD‐based DC‐LED, and a red (R) Zn?Cu?In?S/ZnS QD‐based DC‐LED with correlated color temperature from 2700 to 10 000 K. The red, green, and blue tripackage white DC‐LEDs exhibit high luminous efficacy of 72 lm W^?1 and excellent color qualities (color rendering index (CRI, R_a) = 95 and the special CRI for red (R₉) = 93) at 2700 K.     

High‐Efficient Deep‐Blue Light‐Emitting Diodes by Using High Quality ZnxCd1‐xS/ZnS Core/Shell Quantum Dots

High‐quality violet‐blue emitting Zn_xCd_1‐xS/ZnS core/shell quantum dots (QDs) are synthesized by a new method, called “nucleation at low temperature/shell growth at high temperature”. The resulting nearly monodisperse Zn_xCd_1‐xS/ZnS core/shell QDs have high PL quantum yield (near to 100%), high color purity (FWHM) <25 nm), good color tunability in the violet‐blue optical window from 400 to 470 nm, and good chemical/photochemical stability. More importantly, the new well‐established protocols are easy to apply to large‐scale synthesis; around 37 g Zn_xCd_1‐xS/ZnS core/shell QDs can be easily synthesized in one batch reaction. Highly efficient deep‐blue quantum dot‐based light‐emitting diodes (QD‐LEDs) are demonstrated by employing the Zn_xCd_1‐xS/ZnS core/shell QDs as emitters. The bright and efficient QD‐LEDs show a maximum luminance up to 4100 cd m^?2, and peak external quantum efficiency (EQE) of 3.8%, corresponding to 1.13 cd A^?1 in luminous efficiency. Such high value of the peak EQE can be comparable with OLED technology. These results signify a remarkable progress, not only in the synthesis of high‐quality QDs but also in QD‐LEDs that offer a practicle platform for the realization of QD‐based violet‐blue display and lighting.     

Very High Efficiency Orange‐Red Light‐Emitting Devices with Low Roll‐Off at High Luminance Based on an Ideal Host–Guest System Consisting of Two Novel Phosphorescent Iridium Complexes with Bipolar Transport

Two phosphorescent iridium complexes with bipolar transporting ability, namely FPPCA (500 nm) and BZQPG (600 nm), are synthesized and employed as an ideal host‐guest system for phosphorescent organic light emitting diodes (PHOLEDs).The devices give very high‐efficiency orange‐red emission from BZQPG with maximum external quantum efficiency (EQE or η_ext) of >27% and maximum power efficiency (PE or η_p) of >75 lm/W, and maintain high levels of 26% and 55 lm/W, 25% and 40 lm/W at high luminance of 1000 and 5000 cd m^?2, respectively, within a range of 8–15 wt% of BZQPG. The realization of such high and stable EL performance results from the coexistence of two parallel paths: i) effective energy transfer from host (FPPCA) to guest (BZQPG) and ii) direct exciton formation on the BZQPG emitter, which can alternately dominate the electrophosphorescent emission. This all‐phosphor doping system removes the charge‐injection barrier from the charge‐transport process to the emissive layer (EML) due to the inherent narrow E_g of both phosphors. Therefore, this ideal host–guest system represents a new design to produce PHOLEDs with high efficiency and low efficiency roll‐off using a simple device configuration.     

Role of Excess FAI in Formation of High‐Efficiency FAPbI3‐Based Light‐Emitting Diodes

Introducing extensively excess ammonium halides when forming perovskites has recently been demonstrated as an effective approach to improve the performance of perovskite light‐emitting diodes (PeLEDs). Here, Cs_0.17FA_0.83PbI_2.5Br_0.5 is used as a model system to elucidate the impact of introducing excess formamidinium iodide (FAI) on the crystallization process of the perovskite film and operation of the corresponding PeLED. The excess FAI ratio is varied from 0 to 120 mol% and the crystallization process of the perovskite through in situ absorbance, in situ photoluminescence, and ex situ X‐ray diffraction measurements is systematically monitored. The results suggest that excess FAI triggers formation of a compact wide‐bandgap intermediate phase in the as‐deposited film, which then transforms to isolated and highly crystalline perovskite grains upon annealing. Using excitation correlation photoluminescence spectroscopy it is found that excess FAI results in a lower density of deep trap states and therefore a reduction of nonradiative losses in the material. This leads to a greatly enhanced maximum external quantum efficiency (EQE) from 0.25% (stoichiometric) to 12.7% (90 mol% excess). Furthermore, the FAI‐excess perovskite film is optimized with Pb(SCN)₂ and 5‐ammonium valeric acid iodide additives and achieve a record radiance of 965 W Sr^?1 m^?2 for near‐infrared PeLEDs and a high EQE of 17.4%.     

High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer

Stabilization is one critical issue that needs to be improved for future application of colloidal quantum dot (QD)‐based light‐emitting diodes (QLEDs). This study reports highly efficient and stable QLEDs based on solution‐processsed, metal‐doped nickel oxide films as hole injection layer (HIL). Several kinds of metal dopants (Li, Mg, and Cu) are introduced to improve the hole injection capability of NiO films. The resulting device with Cu:NiO HIL exhibits superior performance compared to the state‐of‐the‐art poly(3,4‐ethylenedioxythiophene):poly(styrene‐sulfonate) (PEDOT:PSS)‐based QLEDs, with a maximum current efficiency and external quantum efficiency of 45.7 cd A^?1 and 10.5%, respectively. These are the highest values reported so far for QLEDs with PEDOT:PSS‐free normal structure. Meanwhile, the resulting QLED shows a half‐life time of 87 h at an initial luminance of 5000 cd m^?2, almost fourfold longer than that of the PEDOT:PSS‐based device.     

Light‐Emitting Electrochemical Cells Based on Color‐Tunable Inorganic Colloidal Quantum Dots

Large‐area, ultrathin light‐emitting devices currently inspire architects and interior and automotive designers all over the world. Light‐emitting electrochemical cells (LECs) and quantum dot light‐emitting diodes (QD‐LEDs) belong to the most promising next‐generation device concepts for future flexible and large‐area lighting technologies. Both concepts incorporate solution‐based fabrication techniques, which makes them attractive for low cost applications based on, for example, roll‐to‐roll fabrication or inkjet printing. However, both concepts have unique benefits that justify their appeal. LECs comprise ionic species in the active layer, which leads to the omission of additional organic charge injection and transport layers and reactive cathode materials, thus LECs impress with their simple device architecture. QD‐LEDs impress with purity and opulence of available colors: colloidal quantum dots (QDs) are semiconducting nanocrystals that show high yield light emission, which can be easily tuned over the whole visible spectrum by material composition and size. Emerging technologies that unite the potential of both concepts (LEC and QD‐LED) are covered, either by extending a typical LEC architecture with additional QDs, or by replacing the entire organic LEC emitter with QDs or perovskite nanocrystals, still keeping the easy LEC setup featured by the incorporation of mobile ions.     

Naphthothiadiazole‐Based Near‐Infrared Emitter with a Photoluminescence Quantum Yield of 60% in Neat Film and External Quantum Efficiencies of up to 3.9% in Nondoped OLEDs

Fluorescent emitters have regained intensive attention in organic light emitting diode (OLED) community owing to the breakthrough of the device efficiency and/or new emitting mechanism. This provides a good chance to develop new near‐infrared (NIR) fluorescent emitter and high‐efficiency device. In this work, a D‐π‐A‐π‐D type compound with naphthothiadiazole as acceptor, namely, 4,4′‐(naphtho[2,3‐c][1,2,5]thiadiazole‐4,9‐diyl)bis(N,N ‐diphenylaniline) (NZ2TPA), is designed and synthesized. The photophysical study and density functional theory analysis reveal that the emission of the compound has obvious hybridized local and charge‐transfer (HLCT) state feature. In addition, the compound shows aggregation‐induced emission (AIE) characteristic. Attributed to its HLCT mechanism and AIE characteristic, NZ2TPA acquires an unprecedentedly high photoluminescent quantum yield of 60% in the neat film, which is the highest among the reported organic small‐molecule NIR emitters and even exceeds most phosphorescent NIR materials. The nondoped devices based on NZ2TPA exhibit excellent performance, achieving a maximum external quantum efficiency (EQE) of 3.9% with the emission peak at 696 nm and a high luminance of 6330 cd m^?2, which are among the highest in the reported nondoped NIR fluorescent OLEDs. Moreover, the device remains a high EQE of 2.8% at high brightness of 1000 cd m^?2, with very low efficiency roll‐off.     

Towards High Efficiency and Low Roll‐Off Orange Electrophosphorescent Devices by Fine Tuning Singlet and Triplet Energies of Bipolar Hosts Based on Indolocarbazole/1, 3, 5‐Triazine Hybrids

Orange‐emitting phosphorescent organic light‐emitting diodes (PHOLEDs) are drawing more and more attention; however, high‐performance hosts designed for orange PHOLEDs are rare. Here, four indolocarbazole/1, 3, 5‐triazine hybrids are synthesized to optimize the singlet and triplet energies, as well as transporting properties, for ideal orange PHOLEDs. By introducing moieties with different electronegativity, a graded reduction of the singlet and triplet energies is achieved, resulting in minimum injection barrier and minimum energy loss. Besides, the charge transporting abilities are also tuned to be balanced on the basis of the bipolar features of those materials. The optimized orange PHOLED shows a maximum external quantum efficiency (EQE) of 24.5% and a power efficiency of 64 lm W^–1, both of which are among the best values for orange PHOLEDs. What is more, the efficiency roll‐off is extremely small, with an EQE of 24.4% at 1000 cd m^–2 and 23.8% at 10 000 cd m^–2, respectively, which is the lowest efficiency roll‐off for orange PHOLEDs to date, resulting in the highest EQE for orange PHOLEDs when the luminance is above 1000 cd m^–2. Besides the balanced charges, the small roll‐off is also attributed to the wide recombination zone resulting from the bipolar features of the hosts.     

Highly Efficient Quantum Dot Light‐Emitting Diodes by Inserting Multiple Poly(methyl methacrylate) as Electron‐Blocking Layers

This work presents a new device architecture integrating multiple poly(methyl methacrylate) (PMMA) electron‐blocking layers (EBL) in quantum dot light‐emitting diodes (QD‐LEDs). The device utilizes red‐emitting CdSe/ZnS QD with a novel structure where multiple PMMA EBLs are sandwiched between a pair of QD layers. A systematic optimization of QD‐LED structures has shown that a device including two PMMA and three QD layers performs the best, achieving a current efficiency of 17.8 cd A^?1 and a luminance of 194 038 cd m^?2. Numerical simulation of a simplified model of the proposed QD‐LED structure verifies that the structure consisting of two PMMA and three QD layers provides significant improvement in electroluminescent intensity. The simulation provides further insight into the origin of the effect of the PMMA EBL by showing that the addition of PMMA EBL reduces the electron leakage from the active QD region and enhances electron confinement, leading to an increased electron concentration in the QD active layers and a higher radiative recombination rate. The experimental and theoretical studies presented in this work demonstrate that multiple layers of PMMA can act as efficient EBLs in the fabrication of QD‐LEDs of improved performance.