Novel Polymorph of GaSe

2D GaSe is a semiconductor belonging to the group of post-transition metal chalcogenides with great potential for advanced optoelectronic applications. The weak interlayer interaction in multilayer 2D materials allows the formation of several polymorphs. Here, the first structural observation of a new GaSe polymorph is reported, characterized by a distinct atomic configuration with a centrosymmetric monolayer (D_3d point group). The atomic structure of this new GaSe polymorph is determined by aberration-corrected scanning transmission electron microscopy. Density-functional theory calculations verify the structural stability of this polymorph. Furthermore, the band structure and Raman intensities are calculated, predicting slight differences to the currently known polymorphs. In addition, the occurrence of layer rotations, interlayer relative orientations, as well as translation shear faults is discussed. The experimental confirmation of the new GaSe polymorph indicates the importance of investigating changes in the crystal structure, which can further impact the properties of this family of compounds.     

Sub‐Millimeter‐Scale Monolayer p‐Type H‐Phase VS2

2D H‐phase vanadium disulfide (VS₂) is expected to exhibit tunable semiconductor properties as compared with its metallic T‐phase structure, and thus is of promise for future electronic applications. However, to date such 2D H‐phase VS₂ nanostructures have not been realized in experiment likely due to the polymorphs of vanadium sulfides and thermodynamic instability of H‐phase VS₂. Preparation of H‐phase VS₂ monolayer with lateral size up to 250 µm, as a new member in the 2D transition metal dichalcogenides (TMDs) family, is reported. A unique growth environment is built by introducing the molten salt‐mediated precursor system as well as the epitaxial mica growth platform, which successfully overcomes the aforementioned growth challenges and enables the evolution of 2D H‐phase structure of VS₂. The honeycomb‐like structure of H‐phase VS₂ with broken inversion symmetry is confirmed by spherical aberration‐corrected scanning transmission electron microscopy and second harmonic generation characterization. The phase structure is found to be ultra‐stable up to 500 K. The field‐effect device study further demonstrates the p‐type semiconducting nature of the 2D H‐phase VS₂. The study introduces a new phase‐stable 2D TMDs materials with potential features for future electronic devices.     

High-Performance Near-Infrared Photodetectors Based on Surface-Doped InSe

2D InSe is one of the semimetal chalcogenides that has been recently given attention thanks to its excellent electrical properties, such as high mobility near 1000 cm² V⁻¹ s⁻¹ and moderate band gap of ≈1.26 eV suitable for IR detection. Here, high-performance visible to near-infrared (470–980 nm wavelength (λ)) photodetectors using surface-doped InSe as a channel and few-layer graphenes (FLG) as electrodes are reported, where the InSe top region is relatively p-doped using AuCl₃. The surface-doped InSe photodetectors show outstanding performance, achieving a photoresponsivity (R) of ≈19 300 A W⁻¹ and a detectivity (D*) of ≈3 × 10¹³ Jones at λ = 470 nm, and R of ≈7870 A W⁻¹ and D* of ≈1.5 × 10¹³ Jones at λ = 980 nm, superior to previously reported 2D material-based IR photodetectors operating without an applied gate bias. Surface doping using AuCl₃ renders a band bending at the junction between the InSe surface and the top FLG contact, which facilitates electron-hole pair separation and immediate photodetection. Multiple doped or undoped InSe photodetectors with different device structures are investigated, providing insight into the photodetection mechanism and optimizing performance. Encapsulation with hexagonal boron nitride dielectric also allows for 3-month stability.     

Excitons and Electron–Hole Liquid State in 2D γ‐Phase Group‐IV Monochalcogenides

Different dispersion near the electronic band edge of a semiconductor can have great influence on its transport, thermoelectric, and optical properties. Using first‐principles calculations, it is demonstrated that a new phase of group‐IV monochalcogenides (γ‐MX, M = Ge, Sn; X = S, Se, or Te) can be stabilized in monolayer limit. γ‐MXs are shown to possess a unique band dispersion—that is, camel's back like structure—in the top valence band. The band nesting effect near the camel's back region induces a large excitonic absorbance and significantly different exciton behaviors from other 2D materials. Importantly, the small effective mass and the indirect characteristics of lowest‐energy exciton render it advantageous for the generation of electron–hole liquid state. After careful evaluation of the electron–hole dissociation temperature and the Mott critical density, it is predicted that a high‐temperature exciton gas to electron–hole liquid phase transition can be achieved in these materials with a low excitation power density. The findings open up new opportunities for both the fundamental research on exciton physics and design of excitonic devices based on 2D materials with distinct band dispersion.     

Systematic Study of Oxygen Vacancy Tunable Transport Properties of Few‐Layer MoO3−x Enabled by Vapor‐Based Synthesis

Bulk and nanoscale molybdenum trioxide (MoO₃) has shown impressive technologically relevant properties, but deeper investigation into 2D MoO₃ has been prevented by the lack of reliable vapor‐based synthesis and doping techniques. Herein, the successful synthesis of high‐quality, few‐layer MoO₃ down to bilayer thickness via physical vapor deposition is reported. The electronic structure of MoO₃ can be strongly modified by introducing oxygen substoichiometry (MoO_3?x ), which introduces gap states and increases conductivity. A dose‐controlled electron irradiation technique to introduce oxygen vacancies into the few‐layer MoO₃ structure is presented, thereby adding n‐type doping. By combining in situ transport with core‐loss and monochromated low‐loss scanning transmission electron microscopy–electron energy‐loss spectroscopy studies, a detailed structure–property relationship is developed between Mo‐oxidation state and resistance. Transport properties are reported for MoO_3?x down to three layers thick, the most 2D‐like MoO_3?x transport hitherto reported. Combining these results with density functional theory calculations, a radiolysis‐based mechanism for the irradiation‐induced oxygen vacancy introduction is developed, including insights into favorable configurations of oxygen defects. These systematic studies represent an important step forward in bringing few‐layer MoO₃ and MoO_3?x into the 2D family, as well as highlight the promise of MoO_3?x as a functional, tunable electronic material.     

Strong Band Bowing Effects and Distinctive Optoelectronic Properties of 2H and 1T′ Phase‐Tunable MoxRe1–xS2 Alloys

Structure and energy band engineering of 2D materials via selective doping or phase modulation provide a significant opportunity to design them for optoelectronic devices. Here, the synthesis of high‐quality Mo_xRe_1–xS₂ alloys with tunable composition and phase structure via chemical vapor deposition growth is reported, and their novel energy band structures and optoelectronic properties are explored. The phase separation and structure reconstruction, which are found to be two serious problems in the synthesis of these alloys, are successfully suppressed through tuning their growth thermodynamics. As a result, the obtained Mo_xRe_1–xS₂ alloys have uniform composition, phase structure, and crystal orientation. Together with X‐ray photoelectron spectroscopy analysis and first‐principle calculation, the Re/Mo doping‐induced Fermi level up‐shift/down‐shift, new electronic states, and “sub‐gap” formation in Mo_xRe_1–xS₂ alloys are revealed. Especially, a strong band bowing effect is discovered in the Mo_xRe_1–xS₂ alloys with structure transition between 1T′ and 2H phases. Furthermore, these alloys reveal tunable conduction behavior from n‐type to bipolar and p‐type in 1T′ phase, as well as novel “bipolar‐like” electron conduction behavior in 2H alloys. The results highlight the unique alloying effects, which do not exist in the single‐phase 2D alloys, and provide the feasibility for potential applications in building novel electronic and optoelectronic devices.     

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone‐centered conduction and valence bands, and a type II band offset, both ideally suited for band‐to‐band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 10⁸ and negative differential resistance at low applied voltages (V ≈ 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.     

Electrical Properties and Structure of p‐Type Amorphous Oxide Semiconductor xZnO·Rh2O3

p‐Type conduction in amorphous oxide was firstly found in zinc rhodium oxide (ZnO·Rh₂O₃) (Adv. Mater. 2003 , 15, 1409), and it is still the only p‐type amorphous oxide to date. It was reported that an ordered structure at the nanometer scale was contained and its electronic structure is not clear yet. In this paper, optoelectronic and structural properties are reported in detail for xZnO·Rh₂O₃ thin films (x = 0.5–2.0) in relation to the chemical composition x. All the films exhibit positive Seebeck coefficients, confirming p‐type conduction. Local network structure strongly depends on the chemical composition. Transmission electron microscopic observations reveal that lattice‐like structures made of edge‐sharing RhO₆ network exist in 2–3 nm sized grains for rhodium‐rich films (x = 0.5 and 1.0), while the zinc‐rich film (x = 2) is completely amorphous. This result indicates that excess Zn assists to form an amorphous network in the ZnO–Rh₂O₃ system since Zn ions tend to form corner‐sharing networks. The electronic structure of an all‐amorphous oxide p‐ZnO·Rh₂O₃/n‐InGaZnO₄ junction is discussed with reference to electrical characteristics and results of photoelectron emission measurements, suggesting that the p/n junction has large band offsets at the conduction and valence bands, respectively.     

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Van der Waals (vdW) heterostructures of 2D atomically thin layered materials (2DLMs) provide a unique platform for constructing optoelectronic devices by staking 2D atomic sheets with unprecedented functionality and performance. A particular advantage of these vdW heterostructures is the energy band engineering of 2DLMs to achieve interlayer excitons through type‐II band alignment, enabling spectral range exceeding the cutoff wavelengths of the individual atomic sheets in the 2DLM. Herein, the high performance of GaTe/InSe vdW heterostructures device is reported. Unexpectedly, this GaTe/InSe vdWs p–n junction exhibits extraordinary detectivity in a new shortwave infrared (SWIR) spectrum, which is forbidden by the respective bandgap limits for the constituent GaTe (bandgap of ≈1.70 eV in both the bulk and monolayer) and InSe (bandgap of ≈1.20–1.80 eV depending on thickness reduction from bulk to monolayer). Specifically, the uncooled SWIR detectivity is up to ≈10¹⁴ Jones at 1064 nm and ≈10¹² Jones at 1550 nm, respectively. This result indicates that the 2DLM vdW heterostructures with type‐II band alignment produce an interlayer exciton transition, and this advantage can offer a viable strategy for devising high‐performance optoelectronics in SWIR or even longer wavelengths beyond the individual limitations of the bandgaps and heteroepitaxy of the constituent atomic layers.     

Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors

Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness‐dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin‐film field effect transistors and phototransistors due to its high intrinsic mobility (>10² cm² V^?1 s^?1) and the direct optical transitions in an energy range suitable for visible and near‐infrared light detection. A key requirement for the exploitation of large‐scale (opto)electronic applications relies on the development of low‐cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high‐throughput device fabrication methods. Here, a β polymorph of indium selenide (β‐InSe) is exfoliated in isopropanol and spray‐coated InSe‐based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W^?1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate‐dependent conduction with an n‐channel transistor behavior. Overall, this study establishes that liquid phase exfoliated β‐InSe is a valid candidate for printed high‐performance photodetectors, which is critical for the development of industrial‐scale 2D material‐based optoelectronic devices.     

MgSiAs: An Unexplored System with Promising Nonlinear Optical Properties

Two new non‐centrosymmetric ternary compounds, MgSiAs₂ and Mg₃Si₆As₈, are discovered via metal flux and solid‐state synthetic methods. MgSiAs₂ belongs to the well‐known II‐IV‐V₂ family, which is extensively studied experimentally and computationally for their optical properties. MgSiAs₂ is computationally predicted but not experimentally known prior to this work. Mg₃Si₆As₈ crystallizes in a new non‐centrosymmetric cubic chiral structure type with the Pearson symbol cP68. The syntheses, crystal structure, thermal and chemical stabilities, electronic structures, and optical properties of these two new compounds are investigated in this work. Optical absorption measurements and electronic structure calculations reveal the two compounds to be direct or pseudo‐direct bandgap semiconductors (1.8–2 eV). The crystal structures of both compounds are non‐centrosymmetric, though Mg₃Si₆As₈ belongs to the 432 chiral crystal class, which is optically active but does not exhibit second harmonic generation (SHG) behavior. The SHG response of MgSiAs₂ is 60% of that for AgGaS₂, but MgSiAs₂ exhibits a higher laser damage threshold than AgGaS₂ at 33.2 MW cm^?2.     

Mg?Si?As: An Unexplored System with Promising Nonlinear Optical Properties

Two new non‐centrosymmetric ternary compounds, MgSiAs₂ and Mg₃Si₆As₈, are discovered via metal flux and solid‐state synthetic methods. MgSiAs₂ belongs to the well‐known II‐IV‐V₂ family, which is extensively studied experimentally and computationally for their optical properties. MgSiAs₂ is computationally predicted but not experimentally known prior to this work. Mg₃Si₆As₈ crystallizes in a new non‐centrosymmetric cubic chiral structure type with the Pearson symbol cP68. The syntheses, crystal structure, thermal and chemical stabilities, electronic structures, and optical properties of these two new compounds are investigated in this work. Optical absorption measurements and electronic structure calculations reveal the two compounds to be direct or pseudo‐direct bandgap semiconductors (1.8–2 eV). The crystal structures of both compounds are non‐centrosymmetric, though Mg₃Si₆As₈ belongs to the 432 chiral crystal class, which is optically active but does not exhibit second harmonic generation (SHG) behavior. The SHG response of MgSiAs₂ is 60% of that for AgGaS₂, but MgSiAs₂ exhibits a higher laser damage threshold than AgGaS₂ at 33.2 MW cm^?2.     

Significantly Increased Raman Enhancement on MoX2 (X = S,Se) Monolayers upon Phase Transition

2D transition metal dichalcogenide (TMD) materials have been recognized as active platforms for surface‐enhanced Raman spectroscopy (SERS). Here, the effect of crystal structure (phase) transition is shown, which leads to altered electronic structures of TMD materials, on the Raman enhancement. Using thermally evaporated copper phthalocyanine, solution soaked rhodamine 6G, and crystal violet as typical probe molecules, it is found that a phase transition from 2H‐ to 1T‐phase can significantly increase the Raman enhancement effect on MoX₂ (X = S, Se) monolayers through a predominantly chemical mechanism. First‐principle density functional theory calculations indicate that the significant enhancement of the Raman signals on metallic 1T‐MoX₂ can be attributed to the facilitated electron transfer from the Fermi energy level of metallic 1T‐MoX₂ to the highest occupied molecular orbital level of the probe molecules, which is more efficient than the process from the top of valence band of semiconducting 2H‐MoX₂. This study not only reveals the origin of the Raman enhancement and identifies 1T‐MoSe₂ and 1T‐MoS₂ as potential Raman enhancement substrates, but also paves the way for designing new 2D SERS substrates via phase‐transition engineering.     

High Efficiency and High Open Circuit Voltage in Quasi 2D Perovskite Based Solar Cells

An important property of hybrid layered perovskite is the possibility to reduce its dimensionality to provide wider band gap and better stability. In this work, 2D perovskite of the structure (PEA)₂(MA)_n–1Pb_nBr_3n+1 has been sensitized, where PEA is phenyl ethyl‐ammonium, MA is methyl‐ammonium, and using only bromide as the halide. The number of the perovskite layers has been varied (n) from n = 1 through n = ∞. Optical and physical characterization verify the layered structure and the increase in the band gap. The photovoltaic performance shows higher open circuit voltage (V_oc) for the quasi 2D perovskite (i.e., n = 40, 50, 60) compared to the 3D perovskite. V_oc of 1.3 V without hole transport material (HTM) and V_oc of 1.46 V using HTM have been demonstrated, with corresponding efficiency of 6.3% and 8.5%, among the highest reported. The lower mobility and transport in the quasi 2D perovskites have been proved effective to gain high V_oc with high efficiency, further supported by ab initio calculations and charge extraction measurements. Bromide is the only halide used in these quasi 2D perovskites, as mixing halides have recently revealed instability of the perovskite structure. These quasi 2D materials are promising candidates for use in optoelectronic applications that simultaneously require high voltage and high efficiency.     

Pressure Induced Unstable Electronic States upon Correlated Nickelates Metastable Perovskites as Batch Synthesized via Heterogeneous Nucleation

Establishing condensed matters at their thermodynamically metastable or unstable structures demonstrates merit in the adjustability of their electronic structures, benefiting the discovery of emerging new material functionalities and applications. Herein, a molten‐salt assisted heterogeneous nucleation approach is demonstrated to significantly improve the effectiveness in batch synthesis of metastable perovskites correlated oxides, such as rare‐earth nickelates (ReNiO₃) with various rare‐earth compositions. In contrast to their conventional synthesis via solid state reactions, herein the metastable ReNiO₃ is heterogeneously precipitated together with potassium chloride (KCl) within the liquid phase of KCl molten‐salt that effectively dissolves the Ni‐/Re‐ precursors and largely enhances their reaction homogeneity. With this solid base overcoming their synthesis metastabilities, the beyond conventional electronic transportation of ReNiO₃ under high pressure is explored. It breaks the conventional thermodynamic equilibrium and triggers the formation of new electronic structures associated with unstable insulating and metallic SmNiO₃ beyond already known manners. The unstable insulating SmNiO₃ exhibits nontemperature‐dependent transportation character similar to saturation or bad metals but preserves 2–3 orders higher electronic conductivity, while a kinetic related hysteresis is observed in the temperature‐dependent transportations of the unstable metallic SmNiO₃. These discoveries with nonequilibrium correlated materials are worthy to be explored further.     

XBi4S7 (X = Mn,Fe): New Cost‐Efficient Layered n‐Type Thermoelectric Sulfides with Ultralow Thermal Conductivity

A new class of cost‐efficient n‐type thermoelectric sulfides with a layered structure is reported, namely MnBi₄S₇ and FeBi₄S₇. Theoretical calculations combined with synchrotron X‐ray/neutron diffraction analyses reveal the origin of their electronic and thermal properties. The complex low‐symmetry monoclinic crystal structure generates an electronic band structure with a mixture of heavy and light bands near the conduction band edge, as well as vibrational properties favorable for high thermoelectric performance. The low thermal conductivity can be attributed to the complex layered crystal structure and to the existence of the lone pair of electrons in Bi³⁺. This feature combined with the relatively high power factor lead to a figure of merit as high as 0.21 (700 K) in undoped MnBi₄S₇, making this material a promising n‐type candidate for low‐ and intermediate‐temperature thermoelectric applications.     

Origins of Improved Hole‐Injection Efficiency by the Deposition of MoO3 on the Polymeric Semiconductor Poly(dioctylfluorene‐alt‐benzothiadiazole)

The electronic structure of the interfaces formed after deposition of MoO₃ hole‐injection layers on top of a polymer light‐emitting material, poly(dioctylfluorene‐alt‐benzothiadiazole) (F8BT), is studied by ultraviolet photoelectron spectroscopy (UPS), X‐ray photoelectron spectroscopy and metastable atom electron spectroscopy. Significant band bending is induced in the F8BT film by MoO₃ “acceptors” that spontaneously diffuse into the F8BT “host” probably driven by kinetic energy of the deposited hot MoO₃. Further deposition leads to the saturation of the band bending accompanied by the formation of MoO₃ overlayers. Simultaneously, a new electronic state in the vicinity of the Fermi level appears on the UPS spectra. Since this peak does not appear in the bulk MoO₃ film, it can be assigned as an interface state between the MoO₃ overlayer and underlying F8BT film. Both band bending and the interface state should result from charge transfer from F8BT to MoO₃, and they appear to be the origin of the hole‐injection enhancement by the insertion of MoO₃ layers between the F8BT light‐emitting diodes and top anodes.     

Design of High‐Performance Disordered Half‐Heusler Thermoelectric Materials Using 18‐Electron Rule

Ternary half‐Heusler (HH) alloys display intriguing functionalities ranging from thermoelectric to magnetic and topological properties. For thermoelectric applications, stable HH alloys with a nominal valence electron count (VEC) of 18 per formula or defective HH alloys with a VEC of 17 or 19 are assumed to be promising candidates. Inspired by the pioneering efforts to design a TiFe_0.5Ni_0.5Sb double HH alloy by combining 17‐electron TiFeSb and 19‐electron TiNiSb HH alloys, both high‐performance n‐type and p‐type materials based on the same parent TiFe_0.5Ni_0.5Sb are developed. First‐principles calculation results demonstrate their beneficial band structure having a high band degeneracy that contributes to their large effective mass and thereby maintains their high Seebeck coefficient values. Due to the strong Fe/Ni disorder effect, TiFe_0.5Ni_0.5Sb exhibits a much lower lattice thermal conductivity than does TiCoSb, consistent with very recently reported results. Furthermore, tuning the ratio of Fe and Ni leads to achieving both p‐ and n‐types, and alloying Ti by Hf further enhances the thermoelectric performance significantly. A peak ZT of ≈1 and ≈0.7 at 973 K are achieved in the p‐type and n‐type based on the same parent, respectively, which are beneficial and promising for real applications.     

Improving the ON/OFF Ratio and Reversibility of Recording by Rational Structural Arrangement of Donor–Acceptor Molecules

Organic molecules with donor–acceptor (D–A) structure are an important type of material for nanoelectronics and molecular electronics. The influence of the electron donor and acceptor units on the electrical function of materials is a worthy topic for the development of high‐performance data storage. In this work, the effect of different D–A structures (namely D–Π–A–Π–D and A–Π–D–Π–A) on the electronic switching properties of triphenylamine‐based molecules is investigated. Devices based on D–Π–A–Π–D molecules exhibit excellent write–read–erase characteristics with a high ON/OFF ratio of up to 10⁶, while that based on A–Π–D–Π–A molecules exhibit irreversible switching behavior with an ON/OFF ratio of about (3.2 × 10¹)–(1 × 10³). Moreover, long retention time of the high conductance state and low threshold voltage are observed for the D–A switching materials. Accordingly, stable and reliable nanoscale data storage is achieved on the thin films of the D–A molecules by scanning tunneling microscopy. The influence of the arrangement of the D and A within the molecular backbone disclosed in this study will be of significance for improving the electronic switching properties (ON/OFF current ratio and reversibility) of new molecular systems, so as to achieve more efficient data storage through appropriate design strategies.     

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors

2D materials are promising to overcome the scaling limit of Si field‐effect transistors (FETs). However, the insulator/2D channel interface severely degrades the performance of 2D FETs, and the origin of the degradation remains largely unexplored. Here, the full energy spectra of the interface state densities (D_it) are presented for both n‐ and p‐ MoS₂ FETs, based on the comprehensive and systematic studies, i.e., full rage of channel thickness and various gate stack structures with h‐BN as well as high‐k oxides. For n‐MoS₂, D_it around the mid‐gap is drastically reduced to 5 × 10¹¹ cm^?2 eV^?1 for the heterostructure FET with h‐BN from 5 × 10¹² cm^?2 eV^?1 for the high‐k top‐gate. On the other hand, D_it remains high, ≈ 10¹³ cm^?2 eV^?1, even for the heterostructure FET for p‐MoS₂. The systematic study elucidates that the strain induced externally through the substrate surface roughness and high‐k deposition process is the origin for the interface degradation on conduction band side, while sulfur‐vacancy‐induced defect states dominate the interface degradation on valance band side. The present understanding of the interface properties provides the key to further improving the performance of 2D FETs.