Highly Stretchable,High‐Mobility,Free‐Standing All‐Organic Transistors Modulated by Solid‐State Elastomer Electrolytes

Highly stretchable, high‐mobility, and free‐standing coplanar‐type all‐organic transistors based on deformable solid‐state elastomer electrolytes are demonstrated using ionic thermoplastic polyurethane (i‐TPU), thereby showing high reliability under mechanical stimuli as well as low‐voltage operation. Unlike conventional ionic dielectrics, the i‐TPU electrolyte prepared herein has remarkable characteristics, i.e., a large specific capacitance of 5.5 µF cm^?2, despite the low weight ratio (20 wt%) of the ionic liquid, high transparency, and even stretchability. These i‐TPU‐based organic transistors exhibit a mobility as high as 7.9 cm² V^?1 s^?1, high bendability (R_c, radius of curvature: 7.2 mm), and good stretchability (60% tensile strain). Moreover, they are suitable for low‐voltage operation (V_DS = ?1.0 V, V_GS = ?2.5 V). In addition, the electrical characteristics such as mobility, on‐current, and threshold voltage are maintained even in the concave and convex bending state (bending tensile strain of ≈3.4%), respectively. Finally, free‐standing, fully stretchable, and semi‐transparent coplanar‐type all‐organic transistors can be fabricated by introducing a poly(3,4‐ethylenedioxythiophene):polystyrene sulfonic acid layer as source/drain and gate electrodes, thus achieving low‐voltage operation (V_DS = ?1.5 V, V_GS = ?2.5 V) and an even higher mobility of up to 17.8 cm² V^?1 s^?1. Moreover, these devices withstand stretching up to 80% tensile strain.     

Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer

Here, a new approach to the layer‐by‐layer solution‐processed fabrication of organic/inorganic hybrid self‐assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P‐PAE, consists of polarizable π‐electron phosphonic acid‐based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin‐coating or blade‐coating in air, by alternating P‐PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic‐ZrOx bilayers, exhibit tunable film thickness, well‐defined nanostructures, large electrical capacitance (up to 558 nF cm^?2), and good insulating properties (leakage current densities as low as 10^?6 A cm^?2). Organic thin‐film transistors that are fabricated with representative p‐/n‐type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin‐coated PSAND‐based devices.     

n‐Type Quinoidal Oligothiophene‐Based Semiconductors for Thin‐Film Transistors and Thermoelectrics

Organic electronic devices have gained immense popularity in the last 30 years owing to their increasing performance. Organic thin‐film transistors (OTFTs) are one of the basic organic electronic devices with potential industrial applications. Another class of devices called organic thermoelectric (OTE) materials can directly transform waste heat into usable electrical power without causing any pollution. p‐Type transistors outperform n‐type transistors because the latter requires a lower orbital energy level for efficient electron injection and stable electron transport under ambient conditions. Aromatic building blocks can be utilized in constructing n‐type semiconductors. Quinoidal compounds are another promising platform for optoelectronic applications because of their unique properties. Since their discovery in 1970s, quinoidal oligothiophene‐based n‐type semiconductors have drawn considerable attention as candidates for high‐performance n‐type semiconductors in OTFTs and OTEs. Herein, the development history of quinoidal oligothiophene‐based semiconductors is summarized, with a focus on the molecular design and the influence of structural modification on molecular packing and thus the device performance of the corresponding quinoidal oligothiophene‐based semiconductors. Insights on the potential of quinoidal oligothiophenes for high‐performance n‐type OTFTs and OTEs are also provided.     

Boosting Direct X‐Ray Detection in Organic Thin Films by Small Molecules Tailoring

The attention focused on the application of organic electronics for the detection of ionizing radiation is rapidly growing among the international scientific community, due to the great potential of organic technology to enable large‐area conformable sensor panels. However, high‐energy photon absorption is challenging as organic materials are constituted of atoms with low atomic numbers. Here it is reported how, by synthesizing new solution‐processable organic molecules derived from 6,13‐bis(triisopropylsilylethynyl)pentacene (TIPS‐pentacene) and 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene, with Ge‐substitution in place of the Si atoms to increase the material atomic number, it is possible to boost the X‐ray detection performance of organic thin films on flexible plastic substrates. Bis(triisopropylgermylethynyl)‐pentacene based flexible organic thin film transistors show high electrical performance with higher mobility (0.4 cm² V^?1 s^?1) and enhanced X‐ray sensitivity, up to 9.0 × 10⁵ µC Gy^?1 cm^?3, with respect to TIPS‐pentacene‐based detectors. Moreover, similar results are obtained for 5,11‐bis(triethylgermylethynyl)anthradithiophene devices, confirming that the proposed strategy, that is, increasing the atomic number of organic molecules by chemical tailoring to improve X‐ray sensitivity, can be generalized to organic thin film detectors, combining high X‐ray absorption, mechanical flexibility, and large‐area processing.     

Fully Printed Light‐Emitting Electrochemical Cells Utilizing Biocompatible Materials

The use of biomaterials and bioinspired concepts in electronics will enable the fabrication of transient and disposable technologies within areas ranging from smart packaging and advertisement to healthcare applications. In this work, the use of a nonhalogenated biodegradable solid polymer electrolyte based on poly(ε‐caprolactone‐co‐trimethylene carbonate) and tetrabutylammonium bis‐oxalato borate in light‐emitting electrochemical cells (LECs) is presented. It is shown that the spin‐cast devices exhibit current efficiencies of ≈2 cd A^?1 with luminance over ≈12 000 cd m^?2, an order of magnitude higher than previous bio‐based LECs. By a combination of industrially relevant techniques (i.e., inkjet printing and blade coating), the fabrication of LEC devices on a cellulose‐based flexible biodegradable substrate showing lifetimes compatible with transient applications is demonstrated. The presented results have direct implications toward the industrial manufacturing of biomaterial‐based light‐emitting devices with potential use in future biodegradable/biocompatible electronics.     

Reusable Cellulose‐Based Hydrogel Sticker Film Applied as Gate Dielectric in Paper Electrolyte‐Gated Transistors

A new concept for reusable eco‐friendly hydrogel electrolytes based on cellulose is introduced. The reported electrolytes are designed and engineered through a simple, fast, low‐cost, and eco‐friendly dissolution method of microcrystalline cellulose at low temperature using an aqueous LiOH/urea solvent system. The cellulose solution is combined with carboxymethyl cellulose, followed by the regeneration and simultaneous ion incorporation. The produced free standing cellulose‐based electrolyte films exhibit interesting properties for application in flexible electrochemical devices, such as biosensors or electrolyte‐gated transistors (EGTs), because of their high specific capacitances (4–5 µF cm^?2), transparency, and flexibility. Indium–gallium–zinc‐oxide EGTs on glass with laminated cellulose‐based hydrogel electrolytes (CHEs) as the gate dielectric are produced presenting a low working voltage (<2 V), showing an on–off current ratio (I _on/off) of 10⁶, a subthreshold swing lower than 0.2 V dec^?1, and saturation mobility (μ_Sat) reaching 26 cm² V^?1 s^?1. The flexible CHE‐gated transistors on paper are also demonstrated, which operate at switching frequencies up to 100 Hz. Combining the flexibility of the EGTs on paper with the reusability of the developed CHEs is a breakthrough toward biodegradable advanced functional materials allied with disposable/recyclable and low‐cost electronic devices.     

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Memory for skin‐attachable wearable devices for healthcare monitoring must meet a number of requirements, including flexibility and stability in external environments. Among various memory technologies, organic‐based resistive random‐access memory (RRAM) devices are an attractive candidate for skin‐attachable wearable devices due to the high flexibility of organic materials. However, organic‐based RRAMs are particularly vulnerable to external moisture, making them difficult to apply as skin‐attachable wearable devices. In this research, RRAMs are fabricated that meet the requirements for skin‐attachable wearable devices using a novel organic material, nitrocellulose (NC), which is biocompatible with high water‐resistance and high flexibility. The fabricated NC‐based RRAMs show a stable bipolar resistive switching characteristic. In addition, the formation of a native Al oxide between Al and NC is verified, which is the source of the bipolar switching characteristic of NC‐based RRAMs. Furthermore, electrical and chemical analysis is conducted after dipping and submersion into various solutions as well as deionized water to confirm the water‐resistance of the NC‐based RRAMs. Finally, it is also confirmed that NC‐based RRAMs are suitable for use in skin‐attachable wearable devices through a flexibility test. In conclusion, this study suggests that NC‐based RRAMs can be applied in skin‐attachable wearable devices, simplifying healthcare in the future.     

High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence

Light‐emitting field‐effect transistors (LEFETs) are an emerging type of devices that combine light‐emitting properties with logical switching function. One of the factors limiting their efficiency stems from the spin statistics of electrically generated excitons. Only 25% of them, short lived singlet states, are capable of light emission, with the other 75% being long lived triplet states that are wasted as heat due to spin‐forbidden processes. Traditionally, the way to overcome this limitation is to use phosphorescent materials as additional emission channel harnessing the triplet excitons. Here, an alternative strategy for triplet usage in LEFETs in the form of thermally activated delayed fluorescence (TADF) is presented. Devices employing a TADF capable material, 4CzIPN (2,4,5,6‐tetra[9H‐carbazol‐9‐yl]isophthalonitrile), in both n‐type and p‐type configurations are shown. They manifest excellent electrical characteristics, consistent brightness in the range of 100–1,000 cd m^‐2 and external quantum efficiency (EQE) of up to 0.1%, which is comparable to the equivalent organic light‐emitting diode (OLED) based on the same materials. Simulation identifies the poor light out‐coupling as the main reason for lower than expected EQEs. Transmission measurements show it can be partially alleviated using a more transparent top contact, however more structural optimization is needed to tap the full potential of the device.     

A High‐Capacitance Salt‐Free Dielectric for Self‐Healable,Printable, and Flexible Organic Field Effect Transistors and Chemical Sensor

Printable and flexible electronics attract sustained attention for their low cost, easy scale up, and potential application in wearable and implantable sensors. However, they are susceptible to scratching, rupture, or other damage from bending or stretching due to their “soft” nature compared to their rigid counterparts (Si‐based electronics), leading to loss of functionality. Self‐healing capability is highly desirable for these “soft” electronic devices. Here, a versatile self‐healing polymer blend dielectric is developed with no added salts and it is integrated into organic field transistors (OFETs) as a gate insulator material. This polymer blend exhibits an unusually high thin film capacitance (1400 nF cm^?2 at 120 nm thickness and 20–100 Hz). Furthermore, it shows pronounced electrical and mechanical self‐healing behavior, can serve as the gate dielectric for organic semiconductors, and can even induce healing of the conductivity of a layer coated above it together with the process of healing itself. Based on these attractive properties, we developed a self‐healable, low‐voltage operable, printed, and flexible OFET for the first time, showing promise for vapor sensing as well as conventional OFET applications.     

A Highly Crystalline Fused‐Ring n‐Type Small Molecule for Non‐Fullerene Acceptor Based Organic Solar Cells and Field‐Effect Transistors

N‐type organic small molecules (SMs) are attracting attention in the organic electronics field, due to their easy purification procedures with high yield. However, only a few reports show SMs that perform well in both organic field‐effect transistors (OFETs) and organic solar cells (OSCs). Here, the synthesis and characterization of an n‐type small molecule with an indacenodithieno[3,2‐b]thiophene (IDTT) core unit and linear alkylated side chain (C₁₆) (IDTTIC) are reported. Compared to the state‐of‐the‐art n‐type molecule IDTIC, IDTTIC exhibits smaller optical bandgap and higher absorption coefficient, which is due to the enhanced intramolecular effect. After mixing with the polymer donor PBDB‐T, IDTIC‐based solar cells deliver a power conversion efficiency of only 5.67%. In stark contrast, the OSC performance of IDTTIC improves significantly to 11.2%. It is found that the superior photovoltaic properties of PBDB‐T:IDTTIC blends are mainly due to reduced trap‐assisted recombination and enhanced molecular packing coherence length and higher domain purity when compared to IDTIC. Moreover, a significantly higher electron mobility of 0.50 cm² V⁻¹ s⁻¹ for IDTTIC in OFET devices than for IDTIC (0.15 cm² V⁻¹ s⁻¹) is obtained. These superior performances in OSCs and OFETs demonstrate that SMs with extended π‐conjugation of the backbone possess a great potential for application in organic electronic devices.     

Biodegradable Materials for Transient Organic Transistors

Electronic devices that can physically disappear in a controlled manner without harmful by-products unveil a wide range of opportunities in medical devices, environmental monitoring, and next-generation consumer electronics. Their property of transience is indispensable for mitigating the global problem of electronic waste accumulation. Additionally, transient technologies that are biocompatible and can be biologically resorbed are of great potential for applications in temporary medical implants, since it eliminates the need for expensive device recovery surgery. Transistors are the key building blocks of modern electronics, and their fabrication using organic materials is beneficial due to their low cost, unprecedented flexibility and facile processing. This contribution reviews the technological application of biodegradable materials in four major classes of organic transistors, namely organic field-effect transistors (OFETs), organic synaptic transistors, electrolyte-gated OFETs, and organic electrochemical transistors. The fundamental biodegradation mechanism is discussed in detail, followed by a perspective of various biodegradable materials utilized as active semiconductors, dielectrics, electrolytes and substrates in the various types of organic transistor devices. This contribution comprehensively discusses the role and application of biodegradable materials in all of the key modern-day organic transistors, highlighting their unique properties that allow the fabrication of biodegradable, eco-friendly, and sustainable devices.     

Ultrathin Organic Electrochemical Transistor with Nonvolatile and Thin Gel Electrolyte for Long‐Term Electrophysiological Monitoring

Skin‐based electrical‐signal monitoring is one of the basic and noninvasive diagnostic methods for observing vital signals that contain valuable information about the dynamic status of the inner body. Soft bioelectronic devices are developed for the acquisition of high‐quality biosignals by taking advantage of their inherent thin and soft bodies. Among these devices, the organic electrochemical transistor (OECT) is a promising local transducing amplifier because of its key advantages, such as low operating voltage, high transconductance, and biocompatibility. However, the transistor's direct electrolyte‐gated operation limits its ability to measure biosignals only when the electrolyte exists. Here, an ultrathin OECT‐based wearable electrophysiological sensor based on a thin (≈6 µm) and nonvolatile gel electrolyte is reported, which can operate on dry biological surfaces. This sensor can measure biopotentials with a high mechanical stability and high signal‐to‐noise ratio (24 dB) even from dry surfaces of the human body and also shows stable performance during long‐term continuous monitoring and multiple reuse in a test that lasted more than a week.     

Silver‐Adapted Diffusive Memristor Based on Organic Nitrogen‐Doped Graphene Oxide Quantum Dots (N‐GOQDs) for Artificial Biosynapse Applications

Carbon‐based electronic devices are suitable candidates for bioinspired electronics due to their low cost, eco‐friendliness, mechanical flexibility, and compatibility with complementary metal‐oxide‐semiconductor technology. New types of materials such as graphene quantum dots (GQDs) have attracted attention in the search for new applications beyond solar cells and energy harvesting due to their superior properties such as elevated photoluminescence, high chemical inertness, and excellent biocompatibility. In this paper, a biocompatible/organic electronic synapse based on nitrogen‐doped graphene oxide quantum dots (N‐GOQDs) is reported, which exhibits threshold resistive switching via silver cation (Ag⁺) migration dynamics. In analogy to the calcium (Ca²⁺) ion dynamics of biological synapses, important biological synapse functions such as short‐term potentiation (STP), paired‐pulse facilitation, and transition from STP to long‐term plasticity behaviors are replicated. Long‐term depression behavior is also evaluated and specific spike‐timing dependent plasticity is assessed. In addition, elaborated switching mechanism of biosimilar Ag⁺ migration dynamics provides the potential for using N‐GOQD‐based artificial synapse in future biocompatible neuromorphic systems.     

A Facile Method for the Growth of Organic Semiconductor Single Crystal Arrays on Polymer Dielectric toward Flexible Field‐Effect Transistors

Polymer dielectrics with intrinsic mechanical flexibility are considered as a key component for flexible organic field‐effect transistors (OFETs). However, it remains a challenge to fabricate highly aligned organic semiconductor single crystal (OSSC) arrays on the polymer dielectrics. Herein, for the first time, a facile and universal strategy, polar surface‐confined crystallization (PSCC), is proposed to grow highly aligned OSSC arrays on poly(4‐vinylphenol) (PVP) dielectric layer. The surface polarity of PVP is altered periodically with oxygen‐plasma treatment, enabling the preferential nucleation of organic crystals on the strong‐polarity regions. Moreover, a geometrical confinement effect of the patterned regions can also prevent multiple nucleation and misaligned molecular packing, enabling the highly aligned growth of OSSC arrays with uniform morphology and unitary crystallographic orientation. Using 2,7‐dioctyl[1]benzothieno[3,2‐b]benzothiophene (C8‐BTBT) as an example, highly aligned C8‐BTBT single crystal arrays with uniform molecular packing and crystal orientation are successfully fabricated on the PVP layer, which can guarantee their uniform electrical properties. OFETs made from the C8‐BTBT single crystal arrays on flexible substrates exhibit a mobility as high as 2.25 cm² V^?1 s^?1, which has surpassed the C8‐BTBT polycrystalline film‐based flexible devices. This work paves the way toward the fabrication of highly aligned OSSCs on polymer dielectrics for high‐performance, flexible organic devices.     

High‐Speed,Low‐Voltage,and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field‐Effect Transistors

Single‐crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide‐nanowire field‐effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on‐currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical‐gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all‐solid‐state FETs with outstanding performance; the field‐effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single‐nanowire transistor are 62 cm²/Vs, 10⁷, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically‐gated field‐effect transistor (EG FET) devices is supported by their long‐term stability in air. Moreover, due to the good conductivity (≈10^?2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut‐off frequency in excess of 100 kHz is measured for in‐plane FETs with large gate‐channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top‐gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all‐solution processed and high throughput techniques.     

Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications

Stretchable electronic devices should be enabled by the smart design of materials and architectures because their commercialization is limited by the tradeoff between stretchability and electrical performance limits. In this study, thin‐film transistors are fabricated using strategies that combine the unit process of a novel hybrid gate insulator and low‐temperature indium gallium tin oxide (IGTO) channel layer and a stress‐relief substrate structure. Novel hybrid dielectric films are synthesized and their molecular structural configurations are analyzed. These films consist of a polymer [poly(4‐vinylphenol‐co‐methylmethacrylate)], cross‐linkers having different binding structures [1,6‐bis(trimethoxysilyl)hexane (BTMSH), dodecyltrimethoxysilane, and poly(melamine‐co‐formaldehyde)], and an inorganic zirconia component (ZrO_x). The hybrid film with BTMSH cross‐linker and 0.2 M ZrO_x exhibits excellent insulating properties as well as mechanical stretchability. IGTO transistors fabricated on polyimide‐coated glass substrates are transferred to the rubber substrate to offer stretchability of the transistor pixelated thin‐film transistors. IGTO transistors fabricated on stretchable substrates using these strategies show promising electrical performance and mechanical durability. After 200 stretchability test cycles under uniaxial elongation of approximately 300%, the IGTO transistor still retains a high carrier mobility of 21.7 cm² V^?1 s^?1, a low sub‐threshold gate swing of 0.68 V decade^?1 and a high I_ON/OFF ratio of 2.0 × 10⁷.     

High‐Performance Photoresponsive Organic Nanotransistors with Single‐Layer Graphenes as Two‐Dimensional Electrodes

Graphene behaves as a robust semimetal with the high electrical conductivity stemming from its high‐quality tight two‐dimensional crystallographic lattice. It is therefore a promising electrode material. Here, a general methodology for making stable photoresponsive field effect transistors, whose device geometries are comparable to traditional macroscopic semiconducting devices at the nanometer scale, using cut graphene sheets as 2D contacts is detailed. These contacts are produced through oxidative cutting of individual 2D planar graphene by electron beam lithography and oxygen plasma etching. Nanoscale organic transistors based on graphene contacts show high‐performance FET behavior with bulk‐like carrier mobility, high on/off current ratio, and high reproducibility. Due to the presence of photoactive molecules, the devices display reversible changes in current when they are exposed to visible light. The calculated responsivity of the devices is found to be as high as ～8.3 A W^?1. This study forms the basis for making new types of ultrasensitive molecular devices, thus initiating broad research interest in the field of nanoscale/molecular electronics.     

Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F^? and OH^?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices.     

Merging Biology and Solid‐State Lighting: Recent Advances in Light‐Emitting Diodes Based on Biological Materials

Solid‐state lighting (SSL) is one of the biggest achievements of the 20^th century. It has completely changed our modern life with respect to general illumination (light‐emitting diodes), flat devices and displays (organic light‐emitting diodes), and small labeling systems (light‐emitting electrochemical cells). Nowadays, it is however mandatory to make a transition toward green, sustainable, and equally performing lighting systems. In this regard, several groups have realized that the actual SSL technologies can easily and efficiently be improved by getting inspiration from how natural systems that manipulate light have been optimized over millennia. In addition, various natural and biocompatible materials with suitable properties for lighting applications have been used to replace expensive and unsustainable components of current lighting devices. Finally, SSL has also started to revolutionize the biomedical field with the achievement of efficient implantable lighting systems. Herein, the‐state‐of‐art of (i) biological materials for lighting devices, (ii) bioinspired concepts for device designs, and (iii) implantable SSL technologies is summarized, highlighting the perspectives of these emerging fields.     

Ultralight and Binder‐Free All‐Solid‐State Flexible Supercapacitors for Powering Wearable Strain Sensors

Flexible energy storage devices play a pivotal role in realizing the full potential of flexible electronics. This work presents high‐performance, all‐solid‐state, flexible supercapacitors by employing an innovative multilevel porous graphite foam (MPG). MPGs exhibit superior properties, such as large specific surface area, high electric conductivity, low mass density, high loading efficiency of pseudocapacitive materials, and controlled corrugations for accommodating mechanical strains. When loaded with pseudocapacitive manganese oxide (Mn₃O₄), the MPG/Mn₃O₄ (MPGM) composites achieve a specific capacitance of 538 F g^?1 (1 mV s^?1) and 260 F g^?1 (1 mV s^?1) based on the mass of pure Mn₃O₄ and entire electrode composite, respectively. Both are among the best of Mn₃O₄‐based supercapacitors. The MPGM is mechanically robust and can go through 1000 mechanical bending cycles with only 1.5% change in electric resistance. When integrated as all‐solid‐state symmetric supercapacitors, they offer a full cell specific capacitance as high as 53 F g^?1 based on the entire electrode and retain 80% of capacitance after 1000 continuous mechanical bending cycles. Furthermore, the all‐solid‐state flexible supercapacitors are incorporated with strain sensors into self‐powered flexible devices for detection of both coarse and fine motions on human skins, i.e., those from finger bending and heart beating.