Morphology Associated Positive Correlation between Carrier Mobility and Carrier Density in Highly Doped Donor–Acceptor Conjugated Polymers

Molecular doping in conjugated polymers (CPs) has recently received intensive attention for its potential to achieve high electrical conductivity in organic thermoelectric materials. In particular, it affects not only the carrier density n but also the carrier mobility µ because high degree of molecular doping changes the morphological properties. Herein, the effect of molecular doping in CP thin films on the pathways and mechanisms of charge transport is investigated, which govern the µ-n relationship. Two representative donor–acceptor type CPs with similar µ but different molecular assembly in an undoped state, that is poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (DPPDTT) and indacenodithiophene-co-benzothiadiazole (IDTBT), are prepared. Heavy doping with iron chloride (FeCl₃) induced DPPDTT with highly crystalline edge-on orientation to increase its µ up to 19.6 cm² V⁻¹ s⁻¹, whereas IDTBT with irregular intermolecular stacking showed little change in µ. It is revealed that this different µ-n relationship is highly attributed to the initial molecular ordering of CP films. The charge transport mechanism also becomes significantly different: both coherent and incoherent transports are observed in the doped DPPDTT, whereas incoherent transport is only found in the doped IDTBT. This study suggests guidelines for enhancing charge transport of CPs under doping in terms of structural disorder.     

Accurate Extraction of Charge Carrier Mobility in 4‐Probe Field‐Effect Transistors

Charge carrier mobility is an important characteristic of organic field‐effect transistors (OFETs) and other semiconductor devices. However, accurate mobility determination in FETs is frequently compromised by issues related to Schottky‐barrier contact resistance, that can be efficiently addressed by measurements in 4‐probe/Hall‐bar contact geometry. Here, it is shown that this technique, widely used in materials science, can still lead to significant mobility overestimation due to longitudinal channel shunting caused by voltage probes in 4‐probe structures. This effect is investigated numerically and experimentally in specially designed multiterminal OFETs based on optimized novel organic‐semiconductor blends and bulk single crystals. Numerical simulations reveal that 4‐probe FETs with long but narrow channels and wide voltage probes are especially prone to channel shunting, that can lead to mobilities overestimated by as much as 350%. In addition, the first Hall effect measurements in blended OFETs are reported and how Hall mobility can be affected by channel shunting is shown. As a solution to this problem, a numerical correction factor is introduced that can be used to obtain much more accurate experimental mobilities. This methodology is relevant to characterization of a variety of materials, including organic semiconductors, inorganic oxides, monolayer materials, as well as carbon nanotube and semiconductor nanocrystal arrays.     

Controllable Molecular Doping and Charge Transport in Solution‐Processed Polymer Semiconducting Layers

Here, controlled p‐type doping of poly(2‐methoxy‐5‐(2′‐ethylhexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) deposited from solution using tetrafluoro‐tetracyanoquinodimethane (F4‐TCNQ) as a dopant is presented. By using a co‐solvent, aggregation in solution can be prevented and doped films can be deposited. Upon doping the current–voltage characteristics of MEH‐PPV‐based hole‐only devices are increased by several orders of magnitude and a clear Ohmic behavior is observed at low bias. Taking the density dependence of the hole mobility into account the free hole concentration due to doping can be derived. It is found that a molar doping ratio of 1 F4‐TCNQ dopant per 600 repeat units of MEH‐PPV leads to a free carrier density of 4 × 10²² m^?3. Neglecting the density‐dependent mobility would lead to an overestimation of the free hole density by an order of magnitude. The free hole densities are further confirmed by impedance measurements on Schottky diodes based on F4‐TCNQ doped MEH‐PPV and a silver electrode.     

Introducing a Nonvolatile N‐Type Dopant Drastically Improves Electron Transport in Polymer and Small‐Molecule Organic Transistors

Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p‐type dopants, work on their n‐type counterparts is comparatively limited. Here, reported is the previously unexplored n‐dopant (12a,18a)‐5,6,12,12a,13,18,18a,19‐octahydro‐5,6‐dimethyl‐ 13,18[1′,2′]‐benzenobisbenzimidazo [1,2‐b:2′,1′‐d]benzo[i][2.5]benzodiazo‐cine potassium triflate adduct (DMBI‐BDZC) and its application in organic thin‐film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐ bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2′‐bithiophene)] and a small‐molecule naphthalene diimides fused with 2‐(1,3‐dithiol‐2‐ylidene)malononitrile groups (NDI‐DTYM2) are used to study the effectiveness of DMBI‐BDZC as a n‐dopant. N‐doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm² V^?1 s^?1), reduced threshold voltage and lower contact resistance. The impact of DMBI‐BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n‐doping activity of DMBI‐BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground‐state electron transfer as the main doping mechanism. The work highlights DMBI‐BDZC as a promising n‐type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics.     

Effect of Doping Concentration on Microstructure of Conjugated Polymers and Characteristics in N‐Type Polymer Field‐Effect Transistors

Despite extensive progress in organic field‐effect transistors, there are still far fewer reliable, high‐mobility n‐type polymers than p‐type polymers. It is demonstrated that by using dopants at a critical doping molar ratio (MR), performance of n‐type polymer poly[[N,N9‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,59‐(2,29‐bithiophene)] (P(NDI2DO‐T2)) field‐effect transistors (FETs) can be significantly improved and simultaneously optimized in mobility, on–off ratio, crystallinity, injection, and reliability. In particular, when using the organic dopant bis(cyclopentadienyl)–cobalt(II) (cobaltocene, CoCp₂) at a low concentration (0.05 wt%), the FET mobility is increased from 0.34 to 0.72 cm² V^–1 s^–1, and the threshold voltage was decreased from 32.7 to 8.8 V. The relationship between the MR of dopants and electrical characteristics as well as the evolution in polymer crystallinity revealed by synchrotron X‐ray diffractions are systematically investigated. Deviating from previous discoveries, it is found that mobility increases first and then decreases drastically beyond a critical value of MR. Meanwhile, the intensity and width of the main peak of in‐plane X‐ray diffraction start to decrease at the same critical MR. Thus, the mobility decrease is correlated with the disturbed in‐plane crystallinity of the conjugated polymer, for both organic and inorganic dopants. The method provides a simple and efficient approach to employing dopants to optimize the electrical performance and microstructure of P(NDI2DO‐T2).     

Mechanism of Crystallization and Implications for Charge Transport in Poly(3‐ethylhexylthiophene) Thin Films

In this work, crystallization kinetics and aggregate growth of poly(3‐ethylhexylthiophene) (P3EHT) thin films are studied as a function of film thickness. X‐ray diffraction and optical absorption show that individual aggregates and crystallites grow anisotropically and mostly along only two packing directions: the alkyl stacking and the polymer chain backbone direction. Further, it is also determined that crystallization kinetics is limited by the reorganization of polymer chains and depends strongly on the film thickness and average molecular weight. Time‐dependent, field‐effect hole mobilities in thin films reveal a percolation threshold for both low and high molecular weight P3EHT. Structural analysis reveals that charge percolation requires bridged aggregates separated by a distance of ≈2–3 nm, which is on the order of the polymer persistence length. These results thus highlight the importance of tie molecules and inter‐aggregate distance in supporting charge percolation in semiconducting polymer thin films. The study as a whole also demonstrates that P3EHT is an ideal model system for polythiophenes and should prove to be useful for future investigations into crystallization kinetics.     

Synthesis,Electronic Structure,and Charge Transport Characteristics of Naphthalenediimide‐Based Co‐Polymers with Different Oligothiophene Donor Units

Naphthalenediimide (NDI)‐based polymers co‐polymerized with thienyl units are an interesting class of polymer semiconductors because of their good electron mobilities and unique film microstructure. Despite these properties, understanding how the extension of the thienyl co‐monomer affects charge transport properties remains unclear. With this goal in mind, we have synthesized a series of NDI derivatives of the parent poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene) (P(NDI2OD‐T2)), which exhibited excellent electron mobility. The strategy comprises both the extension of the donor o‐conjugation length and the heteroatomic fusion of the thiophene rings. These newly synthesized compounds are characterized experimentally and theoretically vis‐à‐vis with P(NDI2OD‐T2) as the reference. UV‐vis data and cyclic‐voltammetry are adopted to assess the effect of the donor modification on the frontier energy levels and on the bandgap. Intra‐molecular polaronic effects are accounted for by computing the internal reorganization energy with density functional theory (DFT) calculations. Finally electrons and holes transport is experimentally investigated in field‐effect transistors (FETs), by measuring current‐voltage characteristics at variable temperatures. Overall we have identified a regime where inter‐molecular effects, such as the wavefunction overlap and the degree of energetic disorder, induced by the different donor group prevail over polaronic effects and are the leading factors in determining electrons mobility.     

Temperature‐Resolved Local and Macroscopic Charge Carrier Transport in Thin P3HT Layers

Previous investigations of the field‐effect mobility in poly(3‐hexylthiophene) (P3HT) layers revealed a strong dependence on molecular weight (MW), which was shown to be closely related to layer morphology. Here, charge carrier mobilities of two P3HT MW fractions (medium‐MW: M_n = 7 200 g mol^?1; high‐MW: M_n = 27 000 g mol^?1) are probed as a function of temperature at a local and a macroscopic length scale, using pulse‐radiolysis time‐resolved microwave conductivity (PR‐TRMC) and organic field‐effect transistor measurements, respectively. In contrast to the macroscopic transport properties, the local intra‐grain mobility depends only weakly on MW (being in the order of 10^?2 cm² V^?1 s^?1) and being thermally activated below the melting temperature for both fractions. The striking differences of charge transport at both length scales are related to the heterogeneity of the layer morphology. The quantitative analysis of temperature‐dependent UV/Vis absorption spectra according to a model of F. C. Spano reveals that a substantial amount of disordered material is present in these P3HT layers. Moreover, the analysis predicts that aggregates in medium‐MW P3HT undergo a “pre‐melting” significantly below the actual melting temperature. The results suggest that macroscopic charge transport in samples of short‐chain P3HT is strongly inhibited by the presence of disordered domains, while in high‐MW P3HT the low‐mobility disordered zones are bridged via inter‐crystalline molecular connections.     

Evaluation of Half‐Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties

A theoretical evaluation of the thermoelectric‐related electrical transport properties of 36 half‐Heusler (HH) compounds, selected from more than 100 HHs, is carried out in this paper. The electronic structures and electrical transport properties are studied using ab initio calculations and the Boltzmann transport equation under the constant relaxation time approximation for charge carriers. The electronic structure results predict the band gaps of these HH compounds, and show that many HHs are narrow‐band‐gap semiconductors and, therefore, are potentially good thermoelectric materials. The dependence of Seebeck coefficient, electrical conductivity, and power factor on the Fermi level is investigated. Maximum power factors and the corresponding optimal p‐ or n‐type doping levels, related to the thermoelectric performance of materials, are calculated for all HH compounds investigated, which certainly provide guidance to experimental work. The estimated optimal doping levels and Seebeck coefficients show reasonable agreement with the measured results for some HH systems. A few HHs are recommended to be potentially good thermoelectric materials based on our calculations.     

Semiconducting Polymers Based on Isoindigo and Its Derivatives: Synthetic Tactics,Structural Modifications,and Applications

The past few decades have witnessed the tremendous development of semiconducting polymers in electronic applications, which is inextricably related to the diversity of polymer structure. The change of polymer structure significantly influences the polymer packing, thin film morphology, and other optoelectronic properties, thus meeting the need for different device applications. With the development of synthetic chemistry and theoretical computation, many high-performance building blocks and polymers have emerged. Among them, isoindigo- and isoindigo derivatives-based polymers are widely studied in various fields of organic electronics, and many of them showed excellent properties. This review summarizes the synthetic tactics of isoindigo-derived monomers and polymers. Moreover, the structural modification strategies of polymers are discussed in detail, including the modification of isoindigo derivatives and the regulation of polymer type. Using isoindigo-derived polymers, various applications, such as organic field-effect transistors, chemical sensors, organic electrochemical transistors, organic phototransistors, organic photovoltaics, organic thermoelectrics, organic spin valves, and biophotonic applications, are introduced to illustrate the important effects of structural modification.     

Effect of Charge Density on Energy‐Transfer Properties of Cationic Conjugated Polymers

Cationic conjugated polymers (CCPs) with different charge densities are synthesized via Suzuki polymerization. The CCPs show similar optical properties in aqueous solutions but obvious difference in fluorescence resonance energy transfer (FRET) to Texas Red‐labeled single‐stranded DNA (ssDNA‐TR). Both CCP and TR fluorescence quenching are revealed to influence the energy‐transfer process. The difference in quantum yields of CCP/ssDNA complexes highlights the importance of polymer side‐chain structures and charge density. A CCP with a high charge density and ethylene oxide as the side chain provides the highest quantum yield for CCP/ssDNA complexes, which favors FRET. TR quenching within the CCP/ssDNA complexes is predominantly determined by the CCP charge density. In contrast to the other two polymers, the CCP with low charge density provides the most‐intense polymer‐sensitized TR emission, which is due to the collective response of more optically active polymer units around TR and the minimized TR self‐quenching within the CCP/ssDNA‐TR complexes. These studies provide a new guideline for improving the signal amplification of conjugated‐polymer‐based optical sensors.     

Influence of the Electron Deficient Co‐Monomer on the Optoelectronic Properties and Photovoltaic Performance of Dithienogermole‐based Co‐Polymers

A series of donor–acceptor (D–A) conjugated polymers utilizing 4,4‐bis(2‐ethylhexyl)‐4H‐germolo[3,2‐b:4,5‐b′]dithiophene ( DTG ) as the electron rich unit and three electron withdrawing units of varying strength, namely 2‐octyl‐2H‐benzo[d][1,2,3]triazole ( BTz ), 5,6‐difluorobenzo[c][1,2,5]thiadiazole ( DFBT ) and [1,2,5]thiadiazolo[3,4‐c]pyridine ( PT ) are reported. It is demonstrated how the choice of the acceptor unit ( BTz , DFBT , PT ) influences the relative positions of the energy levels, the intramolecular transition energy (ICT), the optical band gap (E_g^opt), and the structural conformation of the DTG ‐based co‐polymers. Moreover, the photovoltaic performance of poly[(4,4‐bis(2‐ethylhexyl)‐4H‐germolo[3,2‐b:4,5‐b′]dithiophen‐2‐yl)‐([1,2,5]thiadiazolo[3,4‐c]pyridine)] ( PDTG‐PT ), poly[(4,4‐bis(2‐ethylhexyl)‐4H‐germolo[3,2‐b:4,5‐b′]dithiophen‐2‐yl)‐(2‐octyl‐2H‐benzo[d][1,2,3]triazole)] ( PDTG‐BTz ), and poly[(4,4‐bis(2‐ethylhexyl)‐4H‐germolo[3,2‐b:4,5‐b′]dithiophen‐2‐yl)‐(5,6‐difluorobenzo[c][1,2,5]thiadiazole)] ( PDTG‐DFBT ) is studied in blends with [6,6]‐phenyl‐C₇₀‐butyric acid methyl ester ( PC₇₀BM ). The highest power conversion efficiency (PCE) is obtained by PDTG‐PT (5.2%) in normal architecture. The PCE of PDTG‐PT is further improved to 6.6% when the device architecture is modified from normal to inverted. Therefore, PDTG‐PT is an ideal candidate for application in tandem solar cells configuration due to its high efficiency at very low band gaps (E_g^opt = 1.32 eV). Finally, the 6.6% PCE is the highest reported for all the co‐polymers containing bridged bithiophenes with 5‐member fused rings in the central core and possessing an E_g^opt below 1.4 eV.     

Charge Transport and Recombination in Polyspirobifluorene Blue Light‐Emitting Diodes

The charge transport in blue light‐emitting polyspirobifluorene is investigated by both steady‐state current‐voltage measurements and transient electroluminescence. Both measurement techniques yield consistent results and show that the hole transport is space‐charge limited. The electron current is found to be governed by a high intrinsic mobility in combination with electron traps. Numerical simulations on light‐emitting diodes reveal a shift in the recombination zone from the cathode to the anode with increasing bias.     

A Versatile Method to Fabricate Highly In‐Plane Aligned Conducting Polymer Films with Anisotropic Charge Transport and Thermoelectric Properties: The Key Role of Alkyl Side Chain Layers on the Doping Mechanism

A general method is proposed to produce oriented and highly crystalline conducting polymer layers. It combines the controlled orientation/crystallization of polymer films by high‐temperature rubbing with a soft‐doping method based on spin‐coating a solution of dopants in an orthogonal solvent. Doping rubbed films of regioregular poly(3‐alkylthiophene)s and poly(2,5‐bis(3‐dodecylthiophen‐2‐yl)thieno[3,2‐b ]thiophene) with 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F₄TCNQ) yields highly oriented conducting polymer films that display polarized UV–visible–near‐infrared (NIR) absorption, anisotropy in charge transport, and thermoelectric properties. Transmission electron microscopy and polarized UV–vis–NIR spectroscopy help understand and clarify the structure of the films and the doping mechanism. F₄TCNQ^? anions are incorporated into the layers of side chains and orient with their long molecular axis perpendicular to the polymer chains. The ordering of dopant molecules depends closely on the length and packing of the alkyl side chains. Increasing the dopant concentration results in a continuous variation of unit cell parameters of the doped phase. The high orientation results in anisotropic charge conductivity (σ) and thermoelectric properties that are both enhanced in the direction of the polymer chains (σ = 22 ± 5 S cm^?1 and S = 60 ± 2 µV K^?1). The method of fabrication of such highly oriented conducting polymer films is versatile and is applicable to a large palette of semiconducting polymers.     

Linking Glass-Transition Behavior to Photophysical and Charge Transport Properties of High-Mobility Conjugated Polymers

The measurement of the mechanical properties of conjugated polymers can reveal highly relevant information linking optoelectronic properties to underlying microstructures and the knowledge of the glass transition temperature (T_g) is paramount for informing the choice of processing conditions and for interpreting the thermal stability of devices. In this work, we use dynamical mechanical analysis to determine the T_g of a range of state-of-the-art conjugated polymers with different degrees of crystallinity that are widely studied for applications in organic field-effect transistors. We compare our measured values for T_g to the theoretical value predicted by a recent work based on the concept of effective mobility ζ. The comparison shows that for conjugated polymers with a modest length of the monomer units, the T_g values agree well with theoretically predictions. However, for the near-amorphous, indacenodithiophene–benzothiadiazole family of polymers with more extended backbone units, values for T_g appear to be significantly higher, predicted by theory. However, values for T_g are correlated with the sub-bandgap optical absorption suggesting the possible role of the interchain short contacts within materials’ amorphous domains.     

Eleven‐Membered Fused‐Ring Low Band‐Gap Polymer with Enhanced Charge Carrier Mobility and Photovoltaic Performance

A multi‐ring, ladder‐type low band‐gap polymer (PIDTCPDT‐DFBT) is developed to show enhanced light harvesting, charge transport, and photovoltaic performance. It possesses excellent planarity and enhanced effective conjugation length compared to the previously reported fused‐ring polymers. In order to understand the effect of extended fused‐ring on the electronic and optical properties of this polymer, a partially fused polymer PIDTT‐T‐DFBT is also synthesized for comparison. The fully rigidified polymer provides lower reorganizational energy, resulting in one order higher hole mobility than the reference polymer. The device made from PIDTCPDT‐DFBT also shows a quite promising power conversion efficiency of 6.46%. Its short‐circuit current (14.59 mA cm^?2) is also among the highest reported for ladder‐type polymers. These results show that extending conjugation length in fused‐ring ladder polymers is an effective way to reduce band‐gap and improve charge transport for efficient photovoltaic devices.     

Unraveling Doping Capability of Conjugated Polymers for Strategic Manipulation of Electric Dipole Layer toward Efficient Charge Collection in Perovskite Solar Cells

Developing electrical organic conductors is challenging because of the difficulties involved in generating free charge carriers through chemical doping. To devise a novel doping platform, the doping capabilities of four designed conjugated polymers (CPs) are quantitatively characterized using an AC Hall‐effect device. The resulting carrier density is related to the degree of electronic coupling between the CP repeating unit and 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F4‐TCNQ), and doped PIDF‐BT provides an outstanding electrical conductivity, exceeding 210 S cm^?1, mainly due to the doping‐assisted facile carrier generation and relatively fast carrier mobility. In addition, it is noted that a slight increment in the electron‐withdrawing ability of the repeating unit in each CP diminishes electronic coupling with F4‐TCNQ, and severely deteriorates the doping efficiency including the alteration of operating doping mechanism for the CPs. Furthermore, when PIDF‐BT with high doping capability is applied to the hole transporting layer, with F4‐TCNQ as the interfacial doping layer at the interface with perovskite, the power conversion efficiency of the perovskite solar cell improves significantly, from 17.4% to over 20%, owing to the ameliorated charge‐collection efficiency. X‐ray photoelectron spectroscopy and Kelvin probe analyses verify that the improved solar cell performance originates from the increase in the built‐in potential because of the generation of electric dipole layer.     

Highly Efficient Microscopic Charge Transport within Crystalline Domains in a Furan‐Flanked Diketopyrrolopyrrole‐Based Conjugated Copolymer

Elucidating the interrelation between the molecular structure and charge transport properties in conjugated polymer thin films is an essential issue in developing the design principle of high‐performance polymer materials for application in organic electronics. In particular, the backbone planarity is suggested to be a key element that governs the transport performance, especially in recently developed donor–acceptor (D–A)‐type copolymers exhibiting high mobility, whereas the direct evaluation of the intrinsic transport performance, usually realized only within the small crystalline domains, is difficult by using conventional macroscopic measurements. Here, it is demonstrated that a D–A type copolymer, PDPPF‐DTT, which consists of furan‐flanked diketopyrrolopyrrole (DPP) and dithienothiophene (DTT) units in the conjugated backbone, exhibits a highly efficient charge transport performance within the crystalline domains with a remarkably low activation energy of less than 8 meV, based on microscopic measurements using field‐induced electron spin resonance spectroscopy. This high transport performance is primarily caused by the high backbone planarity realized by introducing furan‐flanked DPP and fused dithienothiophene units, which is demonstrated from the density functional theory calculations. This result provides a microscopic indication of the effectiveness of the present molecular design to produce a planar backbone and realize highly efficient charge transport performance.     

Effect of Non‐Chlorinated Mixed Solvents on Charge Transport and Morphology of Solution‐Processed Polymer Field‐Effect Transistors

Using non‐chlorinated solvents for polymer device fabrication is highly desirable to avoid the negative environmental and health effects of chlorinated solvents. Here, a non‐chlorinated mixed solvent system, composed by a mixture of tetrahydronaphthalene and p­‐xylene, is described for processing a high mobility donor‐acceptor fused thiophene‐diketopyrrolopyrrole copolymer (PTDPPTFT4) in thin film transistors. The effects of the use of a mixed solvent system on the device performance, e.g., charge transport, morphology, and molecular packing, are investigated. p‐Xylene is chosen to promote polymer aggregation in solution, while a higher boiling point solvent, tetrahydronaphthalene, is used to allow a longer evaporation time and better solubility, which further facilitates morphological tuning. By optimizing the ratio of the two solvents, the charge transport characteristics of the polymer semiconductor device are observed to significantly improve for polymer devices deposited by spin coating and solution shearing. Average charge carrier mobilities of 3.13 cm² V^?1 s^?1 and a maximum value as high as 3.94 cm² V^?1 s^?1 are obtained by solution shearing. The combination of non‐chlorinated mixed solvents and the solution shearing film deposition provide a practical and environmentally‐friendly approach to achieve high performance polymer transistor devices.     

Impact of Polystyrene Oligomer Side Chains on Naphthalene Diimide–Bithiophene Polymers as n‐Type Semiconductors for Organic Field‐Effect Transistors

A series of naphthalene diimide‐based conjugated polymers are prepared with various molar percentage of low molecular weight polystyrene (PS) oligomer of narrow polydispersity as the side chain. The PS side chains are incorporated through preparation of a macromonomer by chain termination of living anionic polymerization. The effects of the PS side chains amount (0–20 mol%) versus overall sidechain on the electrical properties of the resulting polymers as n‐type polymer semiconductors in field‐effect transistors are investigated. We observe that all the studied polymers show similarly high electron mobility (≈0.2 cm² V^?1 s^?1). Importantly, the polymers with high PS side chain content (20 mol%) show a significantly improved device stability under ambient conditions, when compared to the polymers at lower PS content (0–10 mol%). By comparing this observation to the physical blending of the conjugated polymer with PS, we attribute the improved stability to the covalently attached PS side chains potentially serving as a molecular encapsulating layer around the conjugated polymer backbone, rendering it less susceptible to electron traps such as oxygen and water molecules.