Crystallization and ablation in annealing of amorphous-Si thin film on glass and crystalline-Si substrates irradiated by third harmonics of Nd:YAG laser

In the present research, an approach of converting amorphous-silicon (a-Si) thin films into polycrystalline thin films using the third harmonics of an all-solid-state pulsed Nd³⁺:YAG laser (355 nm) is studied. Two different samples of a-Si thin films on alkali-free glass (a-Si/glass) substrates and a-Si thin film on crystalline-Si substrates (a-Si/c-Si) are laser treated at different laser fluences ranging from 170 to 960 mJ/cm². The amount of heat incident on the surface has been analyzed theoretically by solving the one-dimensional heat-equation model. The ablation threshold, the region of crystallization and the depth of crystallization have been investigated theoretically. The influence of laser irradiation, ablation and crystallinity has been experimentally analyzed through in-situ reflectivity measurements, scanning electron microscopy (SEM) and Raman spectroscopy studies. In the case of a-Si/c-Si, the extent of crystallinity and the influence of structural characteristics on electronic properties are studied using the Hall-effect technique. The ablation threshold and the range of crystallization regime are in good agreement with the theoretical results. Laser fluence between 300 and 500 mJ/cm² is required for crystallization and the ablation threshold is estimated to be above 500 mJ/cm² for a-Si thin film with a thickness up to 400 nm.     

ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si2H6: A simple growth kinetic model

Photolysis of Si₂H₆ using 193 nm radiation from an ArF excimer laser has been used to deposit homoepitaxial Si films in the temperature range of 250 to 350°C. Photolytic decomposition of Si₂H₆ generates growth precursors which adsorb on to a hydrogenated Si surface. A growth kinetic model is proposed based on single-photon 193 nm absorption by Si₂H₆, and chemical reaction of the photofragments as they diffuse to the sub-strate surface. With the laser beam positioned parallel to the Si substrate, the deposi-tion yield of solid Si from photo-excited Si₂H₆ is estimated to be 0.20 ± 0.04. Growth rates vary linearly with laser intensity and Si₂H₆ partial pressure over a range of 1–15 mJ/cm² · pulse and 5–40 mTorr, respectively, and epitaxial films are deposited when laser intensity and Si₂H₆ partial pressure conditions are such that the initial photofragment concentration is less than ~10¹³ cm⁻³.     

脉冲Nd:YAG激光器选区晶化制备多晶硅薄膜

采用三倍频后的Nd:YAG固体脉冲激光系统(波长为355 nm)选区诱导晶化非晶硅薄膜,以制备多晶硅薄膜。分别测试了激光晶化前后薄膜的表面形貌和拉曼光谱。在文中分析了400 nm厚薄膜在激光扫描前后的表面形貌变化。拉曼光谱显示薄膜的晶化程度随着激光能量的增加而提高。最优的激光晶化能量密度与薄膜的厚度相关。对于300 nm和400 nm厚的非晶硅薄膜,有效晶化非晶硅的能量密度分别在440-634 mJ/cm²,777-993 mJ/cm²之间。在激光能量密度分别为634 mJ/cm²,975 mJ/cm²和1571 mJ/cm²时,300 nm、400 nm和500 nm厚薄膜达到最好的晶化效果。     

308mn激光辐照猪皮肤损伤阈实验

XeCl气体准分子激光波长为308nm,脉冲宽度50～100ns,峰值功率20MW.实验动物为白色幼猪,共照射203个有效样点,分成5个剂量组,各组照射剂量为38.8～134.3mJ/cm2.相应红斑发生率为11.8～98.0%.用迭代加权回归Bliss法统计,MRD50的剂量为73.03mJ/cm2.     

Laser-induced desorption of atomic and molecular fragments from a tin dioxide surface modified by a thin organic covering of copper phthalocyanine

The systematic features of laser-induced desorption from an SnO₂ surface exposed to 10-ns pulsed neodymium laser radiation are studied at the photon energy 2.34 eV, in the range of pulse energy densities 1 to 50 mJ/cm². As the threshold pulse energy 28 mJ/cm² is achieved, molecular oxygen O₂ is detected in the desorption mass spectra from the SnO₂ surface; as the threshold pulse energy 42 mJ/cm² is reached, tin Sn, and SnO and (SnO)₂ particle desorption is observed. The laser desorption mass spectra from the SnO₂ surface coated with an organic copper phthalocyanine (CuPc) film 50 nm thick are measured. It is shown that laser irradiation causes the fragmentation of CuPc molecules and the desorption of molecular fragments in the laser pulse energy density range 6 to 10 mJ/cm². Along with the desorption of molecular fragments, a weak desorption signal of the substrate components O₂, Sn, SnO, and (SnO)₂ is observed in the same energy range. Desorption energy thresholds of substrate atomic components from the organic film surface are approximately five times lower than thresholds of their desorption from the atomically clean SnO₂ surface, which indicates the diffusion of atomic components of the SnO₂ substrate to the bulk of the deposited organic film.     

Optical properties of <Emphasis Type="Italic">p–i–n</Emphasis> structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm² (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.     

Laser‐fired contact optimization in c‐Si solar cells

In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO₂), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC_x/H(n)), aluminum oxide (Al₂O₃) and silicon nitride (SiN_x/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm² have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.     

Flexible CdTe solar cells on polymer films

Lightweight and flexible CdTe/CdS solar cells on polyimide films have been developed in a ‘superstrate configuration’ where the light is absorbed in CdTe after passing through the polyimide substrate. The average optical transmission of the approximately 10‐μm‐thin spin‐coated polyimide substrate layer is more than ∼75% for wavelengths above 550 nm. RF magnetron sputtering was used to grow transparent conducting ZnO:Al layers on polyimide films. CdTe/CdS layers were grown by evaporation of compounds, and a CdCl₂ annealing treatment was applied for the recrystallization and junction activation. Solar cells of 8·6% efficiency with V_oc = 763 mV, I_sc = 20·3 mA/cm² and FF = 55·7% were obtained. Copyright © 2001 John Wiley & Sons, Ltd.     

Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO₂ gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm² V⁻¹ s⁻¹, respectively. The devices show an excellent on/off ratio (>10⁶), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlO_x dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm² V⁻¹ s⁻¹ at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm² V⁻¹ s⁻¹) and IZI-TFTs (over 38 cm² V⁻¹ s⁻¹) using MO semiconductor layers annealed at 300 °C are achieved.     

Laser ablation of SiO2 for locally contacted Si solar cells with ultra‐short pulses

We apply ultra‐short pulse laser ablation to create local contact openings in thermally grown passivating SiO₂ layers. This technique can be used for locally contacting oxide passivated Si solar cells. We use an industrially feasible laser with a pulse duration of τ_pulse ∼ 10 ps. The specific contact resistance that we reach with evaporated aluminium on a 100 Ω/sq and P‐diffused emitter is in the range of 0·3–1 mΩ cm². Ultra‐short pulse laser ablation is sufficiently damage free to abandon wet chemical etching after ablation. We measure an emitter saturation current density of J_0e = (6·2 ± 1·6) × 10⁻¹³ A/cm² on the laser‐treated areas after a selective emitter diffusion with R_sheet ∼ 20 Ω/sq into the ablated area; a value that is as low as that of reference samples that have the SiO₂ layer removed by HF‐etching. Thus, laser ablation of dielectrics with pulse durations of about 10 ps is well suited to fabricate high‐efficiency Si solar cells. Copyright © 2007 John Wiley & Sons, Ltd.     

MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes

A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J _th=100–200 A/cm², internal optical loss α_i=1.3–1.7 cm^?1, and internal quantum efficiency η_i=60–70% have been fabricated. A CW output optical power of 5 W has been obtained for a single 100-µm-wide aperture mesa stripe laser diode emitting at 1.03 µm. It is shown that use of AlGaAs waveguide layers, which increase the conduction band barrier offset, lowers the temperature sensitivity of laser heterostructures within the temperature range 10–80°C.     

Scalable Fabrication of Cu2S@NiS@Ni/NiMo Hybrid Cathode for High-Performance Seawater Electrolysis

Electrochemical hydrogen evolution reaction (HER) with cost-effectiveness, high performance, and repeatable scale-up production hold promises for large-scale green hydrogen generation technology. Herein, a convenient method for scaling up Cu₂S@NiS@Ni/NiMo electrocatalysts on Cu foam with high geometric area over 100 cm² is presented. The hybrid electrode exhibits high hydrogen evolution activity with 190 and 250 mV overpotential at 1000 mA cm⁻² and superior stability with negligible overpotential loss after over 2000 h at 500 mA cm⁻² under steady-state conditions in both artificial seawater and real seawater. Detailed characterizations and simulations demonstrate that high intrinsic activity resulting from the unique boundary interface, enhance mass transport resulting from superaerophobic nanoarray architecture, and corrosion resistance resulting from polyanion-rich passivating layers together lead to the outstanding performance. The practicability is also demonstrated in an alkaline seawater electrolyzer coupling with the hybrid electrode and stable commercial anode.     

Design and fabrication of a novel high damage threshold HfO2/TiO2/SiO2 multilayer laser mirror

This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser-induced damage threshold. The mirror is constructed by three materials of HfO2/TiO2/SiO2 based on electric field and temperature field distribution characteristics of all-dielectric laser high reflector. TiO2/SiO2 stacks act as the high reflector (HR) and broaden the reflection bandwidth, while HfO2/SiO2 stacks are used for increasing the laser resistance. The HfO2/TiO2/SiO2 laser mirror with 34 layers is fabricated by a novel remote plasma sputtering deposition. The damage threshold of zero damage probability for the new mirror is up to 39.6 J/cm2 (1064 nm, 12 ns). The possible laser damage mechanism of the mirror is discussed.     

Radiation resistance of MBE-grown GaInP/GaAs-based solar cells

Proton irradiation-based degradation characteristics for molecular beam epitaxy (MBE) grown Ga_0·51In_0·49P/GaAs single-junction tandem solar cells of n/p configuration are reported. The cells were irradiated with 3-MeV protons up to fluences of 10¹³ cm⁻². The cells were characterized with current–voltage (I–V) measurements at AMO conditions, and with spectral measurements. The damage coefficient for the GaAs cells was calculated using numerical modelling by the PC-1D program, and the result was compared with the InP damage coefficient. By using the ‘displacement damage dose’ approach, the degradation characteristics were compared with the published data for InP and GaAs/Ge solar cells. In addition, these MBE results were compared with the radiation behavior of metal-organic chemical vapor deposition (MOCVD)-grown Ga_0·51In_0·49P/GaAs single-, and double-junction solar cells of p/n configuration. © 1998 John Wiley & Sons, Ltd.     

四倍频Nd：YAG激光在高压氢气中的喇曼频移研究

利用Nd:YAG固体激光器四倍频输出(266nm)在高压H₂中的受激喇曼散射获得多波长的激光输出。当泵浦能量一定时,通过改变H₂压力得到了最佳的能量输出,299nm波长的激光能量为3mJ,341nm波长的激光能量输出为6.1mJ,398nm波长的激光能量输出为2.8mJ,239nm波长的激光能量输出为0.8mJ,同时在477nm,595nm,218nm,200nm波段也有能量输出。     

Effect of pulsed laser irradiation on the optical characteristics and photoconductivity of the solid solutions CdHgTe

The melting threshold of Cd_0.2Hg_0.8Te has been determined by numerical modeling of the irradiation of the material with nanosecond ruby-laser radiation pulses: W _n =40–50 mJ/cm² with initial crystal temperature T ₀=100 K and W _m =30–40 mJ/cm² at T ₀=300 K. Laserinduced modification of the surface of the sample under irradiation with energy density W<W _m was found; it was manifested as a quenching of the stationary photoconductivity and an increase in the reflection coefficient. For laser irradiation with W above the melting threshold, the reflection coefficient increases further in the region up to W≳100 mJ/cm² and decreases for W>110 mJ/cm². For above-threshold irradiation, the photoconductivity signal was found to decrease monotonically with increasing energy density in the laser pulse; this can be explained by defect formation caused by laser-induced variation of the composition in the surface region. Fiz. Tekh. Poluprovodn. 31, 931–935 (August 1997)     

Direct Laser Interference Patterning of Zirconia Using Infra-Red Picosecond Pulsed Laser: Effect of Laser Processing Parameters on the Surface Topography and Microstructure

This study investigates the influence of processing parameters when applying direct laser interference patterning (DLIP) on the morphology and microstructure of zirconia surfaces using a 10 ps-pulsed laser source with 1064 nm wavelength. An experimental testing matrix is built with different values of laser fluence (5.7 – 18.2 J cm⁻²) and pulse overlap (66 – 98%). Surface morphology and microstructure are characterized by confocal microscopy and scanning electron microscopy. Homogeneous line-like patterns with periodic spatial repetition of 5.0 µm, with varying depths, widths, and aspect ratio, are fabricated using proper processing parameters (5.7 – 7.6 J cm⁻² and 92 – 96%). Structures with maximum depth of 1.5 µm and sharp edges are obtained (7.6 J cm⁻² and 96% overlap). Ablated regions presented a morphology typical of photophysical ablation mechanism, with signs of molten material at the surface. Sub-micrometric pores and nanodroplets are registered for all conditions, while sub-micrometric cracks developed only for higher fluences. A processing window conducing to homogenous DLIP structures is set based on experimental data. Periodic structures with multiscale topographic features are successfully obtained on zirconia surfaces using DLIP technology in this study. These outcomes open new perspectives for fabrication of multifunctional zirconia surfaces for advanced biomedical and engineering applications.     

In-Plane Heterostructured MoN/MoC Nanosheets with Enhanced Interfacial Charge Transfer for Superior Pseudocapacitive Storage

2D transition metal carbide/nitride heterostructures are emerging pseudocapacitive materials for supercapacitors (SCs); however, the lack of efficient synthesis methods and an in-depth understanding of the pseudocapacitive storage mechanism of these potentially important materials impede their applications in SCs. Herein, 2D MoN/MoC nanosheets with a precisely regulated interface are prepared controllably by a scalable salt-assisted method with bulk MoS₂ as the precursor. In operando infrared spectroscopy and electrochemical quartz crystal microbalance results reveal that the pseudocapacitance of the MoN/MoC nanosheets originates from the reversible reaction between Mo–N sites and H⁺ in the acidic electrolyte. Density-functional theory calculations and X-ray photoelectron spectroscopy disclose that the MoC/MoN heterointerface induces the internal electric field from the accumulated negative charges at the Mo–N sites by electron donation from MoC, leading to enhanced H⁺ adsorption at the Mo–N sites and superior pseudocapacitive storage. The heterostructured MoN/MoC nanosheets show a large volumetric capacity of 1045.3 F cm⁻³ at 1 A cm⁻³, high-rate capability of 702.8 F cm⁻³ at 10 A cm⁻³, and superior cyclability with capacity retention of 98% after 10,000 cycles, which outperform reported Mo-based carbides and nitrides. The results provide new insights into the development of high-performance 2D heterostructured materials for superior pseudocapacitive storage.     

Characterization of Si homoepitaxial films grown with and without surface photoactivation by ArF excimer laser-induced photodissociation of Si2H6

Silicon homoepitaxial films have been grown by photodissociation of Si₂H₆ by the 193 nm line of an ArF excimer laser in an ultra-high vacuum system. Silicon epitaxy has been achieved in two ways: one, in which the laser shines into the chamber parallel to the substrate and another, in which the laser is directly incident on the substrate at grazing angles (87° with respect to the substrate normal). Controllable growth rates of 0.5–4Å/min have been achieved for crystalline films by the first method using substrate temperatures as low as 250° C, Si₂H₆ partial pressures of 20 mTorr and photon flux densities of 10¹⁶ photons/pulse.cm². In the second method, where the laser beam is directly incident on the wafer at grazing angles, very high growth rates of up to 80Å/min have been achieved at 300° C, 20 mTorr Si₂H₆ partial pressure and a photon flux density of 2 × 10¹⁵ photons/pulse.cm². A comparison of the microstructure of the films grown by the two methods is presented on the basis ofin situ reflection high energy electron diffraction (RHEED) analysis and selected area transmission electron microscopy (TEM) studies. In both cases, the growth rates are found to be linearly dependent on the photon flux density for the process parameter ranges studied.     

Advanced Zinc–Iodine Batteries with Ultrahigh Capacity and Superior Rate Performance Based on Reduced Graphene Oxide and Water-in-Salt Electrolyte

Aqueous rechargeable zinc–iodine batteries have received increasing attention in the field of portable electronics due to their high safety, low-cost, and great electrochemical performance. However, the insulated nature of iodine and the unrestricted shuttle effect of soluble triiodide seriously limit the lifespan and Coulombic efficiency (CE) of the batteries. Herein, a high-performance zinc–iodine energy storage system based on the hydrothermal reduced graphene oxide (rGO) and a high concentration zinc chloride water-in-salt electrolyte are promoted. The 3D microporous structures and outstanding electrical conductivity of rGO make it an excellent host for iodine, while the water-in-salt electrolyte effectively suppresses the shuttle effect of triiodide and improves the CE of the system. As a result, an ultra-high I₂ mass loading of 25.33 mg cm⁻² (loading ratio of 71.69 wt.%) is realized during the continuous charging/discharging process. The batteries deliver a high capacity of 6.5 mAh cm⁻² at 2 mA cm⁻² with a much-improved CE of 95% and a prominent rate performance with capacity of 1 mAh cm⁻² at 80 mA cm⁻². A stable long-term cycling performance is also achieved with capacity retention of 2 mAh cm⁻² after 2000 cycles at 50 mA cm⁻².