界面极化效应对AlxGa1-xN/GaN异质结pin探测器光电响应的影响

设计了正面入射的探测波长范围限制在326～365nm的AlxGa1-xN/GaN异质结pin光电探测器.利用自洽求解薛定谔-泊松方程计算了AlxGa1-xN/GaN异质结在无极化、完全极化和部分极化的能带图,结合光电响应谱的模拟,分析了界面极化效应对AlxGa1-xN/GaN异质结pin紫外光电探测器响应特性的影响并提出了改善方法.     

界面极化效应对AIxGa1-xN／GaN异质结pin探测器光电响应的影响

设计了正面入射的探测波长范围限制在326～365nm的AlxGa1-χN／GaN异质结pin光电探测器，利用自洽求解薛定谔-泊松方程计算了A1xGa1-xN／GaN异质结在无极化、完全极化和部分极化的能带图，结合光电响应谱的模拟，分析了界面极化效应对AlxGa1-xN／GaN异质结pin紫外光电探测器响应特性的影响并提出了改善方法。     

高抑制比背照式AlxGa1-xN pin日盲紫外探测器研究

利用现有外延材料生长技术和器件工艺技术,生长了背照式AlxGa1-xN pin外延材料,并用生长的材料制作了日盲紫外探测器,测试结果表明器件在0V偏压下抑制比达到了6 400。在此基础上,较详细地分析了偏置电压、p-AlxGa1-xN载流子浓度和Al组分、极化效应对背照式AlxGa1-xN pin日盲紫外探测器抑制比的影响及非日盲光生载流子的限制机制。分析表明,提高p-AlxGa1-xN载流子浓度和GaN/AlxGa1-xN异质结极化强度是现有技术条件下提高器件抑制比的有效途径。     

肖特基C-V法研究AlxGa1-xN/GaN异质结界面二维电子气

通过对Pt/AI0 22Ga078N/GaN肖特基二极管的C-V测量,研究分析了A1022Ga078N/GaN异质结界面二维电子气(2DEG)浓度及其空间分布.测量结果表明,Al0.22Ga.8N/GaN异质结界面2DEG浓度峰值对应的深度在界面以下1.3nm处,2DEG分布峰的半高宽为2.3nm,2DEG面密度为6.5×1012cm-2.与AlxGa1xAs/GaAs异质结比,其2DEG面密度要高一个数量级,而空间分布则要窄一个数量级.这主要归结于A1xGa1-xN层中～MV/cm量级的压电极化电场和自发极化电场对AlxGa1-xN/GaN异质结能带的调制和AlxGa1xN/GaN异质结界面有更大的导带不连续.     

GaN和AlxGa1-xN/CaN异质结的高温性质

通过高温Hall测量研究了GaN和AlxGa1-xN/GaN异质结从室温到500℃高温下的输运性质.实验发现GaN背景载流子浓度随着温度的升高而升高,载流子浓度变化的幅度和GaN的位错密度存在正比关系,持续光电导的跃迁幅度和GaN的位错密度也存在正比关系,说明位错相关的深施主或者陷阱对GaN在高温下的背景浓度有很大影响.实验发现AlxGa1-xN/GaN异质结中二维电子气的浓度在室温到250℃的范围内随着温度的升高而下降,然后随着温度的升高开始增加.前者主要是由于随着温度的升高,AlxGa1-xN/GaN异质结的导带不连续减小引起的,后者主要是由GaN层背景载流子浓度增加导致的.通过求解自洽的薛定谔和泊松方程得到的二维电子气浓度的温度关系和实验结果一致.     

GaN和AlxGa1-xN/CaN异质结的高温性质

通过高温Hall测量研究了GaN和AlxGa1-xN/GaN异质结从室温到500℃高温下的输运性质.实验发现GaN背景载流子浓度随着温度的升高而升高,载流子浓度变化的幅度和GaN的位错密度存在正比关系,持续光电导的跃迁幅度和GaN的位错密度也存在正比关系,说明位错相关的深施主或者陷阱对GaN在高温下的背景浓度有很大影响.实验发现AlxGa1-xN/GaN异质结中二维电子气的浓度在室温到250℃的范围内随着温度的升高而下降,然后随着温度的升高开始增加.前者主要是由于随着温度的升高,AlxGa1-xN/GaN异质结的导带不连续减小引起的,后者主要是由GaN层背景载流子浓度增加导致的.通过求解自洽的薛定谔和泊松方程得到的二维电子气浓度的温度关系和实验结果一致.     

背照式AIGaN/GaN基光电探测器的结构设计及性能模拟

基于扩散漂移方程,对背照式日盲紫外AlxGa1-xN异质结p-i-n光电二极管和可见盲GaN同质结吸收区和倍增区分离的雪崩光电二极管(SAM-APD)进行了建模,模拟分析了这两种探测器的光电响应特性和电学参数,结果与实测数据和文献报道数据一致性较好.计算时还考虑了材料制备和器件工艺的实际情况,分析了有关参数对器件性能的...     

AlGaN/GaN异质结单片集成紫外/红外双色探测器

采用分子束外延(MBE)技术在蓝宝石衬底上依次生长n+GaN下电极层、i型AlxGa1-xN势垒层和n+GaN发射极层,并通过半导体微细加工技术,制作了AlGaN/GaN异质结单片集成紫外/红外双色探测器。该器件利用不同的探测机理,同时实现了红外光和紫外光探测,拓展了响应光谱的范围。红外光探测是通过AlGaN/GaN异质结界面自由电子吸收和功函数内部光致发射效应完成的,紫外光探测是通过AlxGa1-xN势垒层带间吸收完成的。对单元器件的暗电流特性、紫外及红外光谱特性进行了测试。测试结果表明,紫外响应截止波长356 nm,响应度180 mA/W,红外响应峰值波长14.5μm,响应度49 mA/W。     

Al_xGa_(1-x)N/GaN异质结构中二维电子气的自旋性质

Ⅲ族氮化物材料有很长的电子自旋弛豫时间以及很高的居里温度,成为近年来半导体自旋电子学研究的重要材料体系之一。介绍了目前两种最主要的研究AlxGa1-xN/GaN异质结构中二维电子气(2DEG)自旋性质的物理效应:磁电阻的舒伯尼科夫-德哈斯拍频振荡和弱反局域效应,回顾了AlxGa1-xN/GaN异质结构中2DEG自旋性质的研究进展。AlxGa1-xN/GaN异质结构材料中有很强的极化电场,诱导产生很高浓度的2DEG,能够产生相当大能量的自旋分裂,并且这种自旋分裂可以被栅压所调控,因此在自旋场效应晶体管方面有很好的应用前景。然而要实现GaN基自旋电子学器件的应用,GaN中自旋注入效率是目前所面临的问题。     

缓冲层材料对纤锌矿结构GaN(0001)光电发射性能的影响研究

利用金属有机物化学气相沉积技术在蓝宝石衬底上异质外延生长了GaN光电发射层,为降低GaN发射层和蓝宝石衬底间的晶格失配与热失配,在蓝宝石衬底和GaN发射层间分别采用了AlN和AlxGa1-xN两种不同的缓冲层材料。对具有不同缓冲层材料的两种样品进行了表面清洗与激活,在激活结束后利用多信息量测试系统分别测试了样品的光谱响应,其最大量子效率分别为13%和20%,依据激活后光电阴极的光谱响应作为评估标准,可以得出,采用组份渐变AlxGa1-xN作为缓冲层激活出的阴极具有更高的光电发射性能,从而实现了GaN光电阴极结构的优化设计。     

Shortwave Infrared Polarization Imaging and Monolithic Integrated Polarization Amplification Systems Based on Aligned Carbon Nanotube Arrays

Next-generation shortwave infrared (SWIR) imaging systems generally require a multidimensional information sensing capability (including intensity, wavelength, polarization, phase, etc.), a highly integrated photodetector unit, and information processing, allowing for miniaturization and low-cost production. However, traditional polarized SWIR imaging systems with integrated polarizer arrays as supplementary filters and silicon-based amplifying circuits are complicated and very expensive. Here, a SWIR polarization-sensitive photodetector and a monolithic integrated polarization amplification system (MIPAS) based on well-aligned carbon nanotube (CNT) arrays are demonstrated. The polarization-sensitive CNT photodetector exhibits anisotropic ratios of ≈5.18 and ≈7.56 at 1800 and 2000 nm wavelengths, respectively, and high-resolution characteristics that can be utilized to image SWIR laser spots with a radius of less than 10 µm. Furthermore, MIPAS including a CNT field-effect transistor, a CNT loading resistor, and a polarization-sensitive CNT photodetector is used to increase the anisotropic ratio of the CNT photodetector. The amplified anisotropic ratio is improved up to 173 and 243 at 1800 and 2000 nm wavelengths, respectively, which is the maximum reported in the SWIR band.  Our work demonstrates that the CNT polarization-sensitive photodetector has the potential for SWIR polarization imaging with a monolithic integrated polarization amplification system.     

Infrared detection utilizing both intersubband and free-carrier absorption in reverse-biased Superlattice infrared photodetector

Intersubband and free-carrier associated photoresponse in a GaAs-AlGaAs superlattice infrared photodetector is investigated. Under reverse bias, the photodetector is similar to an internal photoemission photodetector and significant photoresponse due to free-carrier absorption at the collector contact is found. In particular, in our photodetector, intersubband transitions at the superlattice layer also play an important role at low reverse biases and produce a photocurrent with an opposite direction to that of the free-carrier associated photocurrent. Since the total photocurrent consists of two components with opposite signs, photocurrent reversal occurs in the response spectrum. At high reverse bias, the intersubband-associated photoresponse is fully suppressed by the blocking barrier and the overall photoresponse is mainly due to the photoemission via free-carrier absorption at the collector contact. The intersubband and free-carrier associated photocurrent components under reverse bias can be resolved from the measured polarization dependence of the spectral response. The analysis of the measured free-carrier associated photocurrent agrees with previous studies on free-carrier absorption. A possible application with our detector to determine the wavelength of a monochromatic light is also demonstrated.     

GaN基量子阱红外探测器的设计

为了实现GaN基量子阱红外探测器,利用自洽的薛定谔一泊松方法对GaN基多量子阱结构的能带结构进行了研究。考虑了GaN基材料中的自发极化和压电极化效应,通过设计适当的量子阱结构,利用自发极化和压电极化的互补作用,设计出了极化匹配的GaN基量子阱红外探测器,为下一步实现GaN基量子阱红外探测器做好了准备。     

A single-element diamond-based photodetector for UV spectrophotometry

A single-element diamond-based UV photodetector that can be used for spectrophotometric facilities is demonstrated. The UV photodetector has photoelectric sensitivity depending on the value of the applied bias voltage. Experimentally obtained variable spectral responses of the photoelectric sensitivity are demonstrated. The applicability of such photodetectors for optoelectronic devices used in multicomponent spectrophotometric systems for the analysis of multicomponent mixtures is considered.     

光电探测器表面损伤状态偏振成像式探测系统

针对在外场实现探测器损伤状态实时探测的需求,研发了光电探测器表面损伤状态偏振成像式探测系统。理论推导了“猫眼”目标回波偏振特性参数DP和回波偏振度DOP的表达式,利用MATLAB软件仿真绘制了表面粗糙度、回波偏振度以及偏振特性的关系曲线;设计了一套同时偏振成像光学系统,开展了671 nm连续激光对电荷耦合器件（CCD）表面损伤状态的实时探测外场实验,编制了基于MATLAB GUI的回波图像可视化实时采集系统,得到了回波图像强度、偏振特性以及光斑尺寸等信息;通过光学显微镜和白光干涉仪对探测器表面损伤处和未损伤处形貌图像分析,发现探测器损伤表面可见硅基底且粗糙度参数Sq值较大;结果表明,仿真结果与实验测试结果具有良好一致性。光电探测器被损伤后,其表面粗糙度增大,回波偏振特性参数DP减小,退偏特性明显,偏振度DOP减小。偏振成像技术可有效对光电探测器表面损伤状态进行实时探测,该研究提供了一种外场条件下实时探测的好方法。     

Structural Design and Pyroelectric Property of SnS/CdS Heterojunctions Contrived for Low‐Temperature Visible Photodetectors

The traditional photodetectors based on photoelectric effect exhibit inferior response or even out of operation with the decrease of temperature. However, cryogenic visible light detection is increasingly demanded in deep space and polar exploration. Herein, a self‐powered visible photodetector coupling pyroelectricity and photoelectricity to optimize the cryogenic detecting performance is designed in which hydrothermally grown CdS nanorod array is covered by SnS nanoflakes. The choice of SnS allows the detector with strong visible light absorption and great photoelectric conversion efficiency, while the CdS nanorod structure with pyroelectricity can effectively modulate the behavior of photogenerated carriers at low temperatures. It is found that the response characteristics of the photodetector are dominated by the combination of pyroelectric and photoelectric effects, which becomes more significant with the reduced temperature. Specifically, at 130 K temperature, the photoresponse current under 650 nm light is improved by 7.5 times as that at room temperature, while the ratio of pyroelectric current to photocurrent can be increased to 400%. Meanwhile, the responsivity and detectivity are as high as 10.4 mA W^?1 and 3.56 × 10¹¹ Jones, respectively. This work provides a promising approach to develop high‐performance self‐powered visible photodetectors with low‐temperature operating capability.     

光外差法测量光探测器频率响应的系统校准

通过实验证明了光外差法测量光探测器频率响应特性的一种校准方法的有效性.首先根据光外差法的基本原理详细推导了光探测器频率响应的表达式.发现了激光器调谐过程中的输出不稳定性是影响光外差法测量光探测器频率响应特性结果准确性的主要原因.激光器的输出不稳定性主要表现在输出光的偏振方向、光功率以及光谱不稳定造成的拍频信号线宽变化.实验对两个3dB带宽分别为10GHz和50GHz的探测器进行测量,逐一比较了采用与没有采用相应校准方法的结果,验证了该校准方法的有效性.     

p-GaN/Al0.35Ga0.65N/GaN应变量子阱肖特基紫外探测器

报道了p-GaN/Al0.35Ga0.65N/GaN应变量子阱结构的肖特基紫外探测器的制备及性能.器件的测试结果表明,在p-GaN/Al0.35Ga0.65N/GaN双异质结中强烈的压电极化和Stark效应共同作用下使得器件在正偏和反偏时的响应光谱都向短波方向移动了10nm.零偏下器件在280nm时的峰值响应为0.022A/W,在反向偏压为1V时,峰值响应增加到0.19A/W,接近理论值.在正向偏压下器件则呈平带状态,并在283和355nm处分别出现了两个小峰.在考虑极化的情况下,通过器件中载流子浓度分布的变化解释了器件在不同偏压下的响应特性,发现p-GaN/Al0.35Ga0.65N/GaN中的极化效应对器件的响应特性影响很大,通过改变偏压和适当的优化设计可以使探测器在紫外波段进行选择性吸收.     

基于电子波干涉红外探测器的研究

电子波干涉法是一种新的量子阱探测器能带结构计算方法,该方法是基于电子波在量子阱界面的反射和干涉效应提出的。利用电子波干涉法,设计了一种新型的宽带量子阱红外探测器。对这种探测器的能带结构进行了计算,分析了这种新型探测器的响应带宽和暗电流特性。理论计算表明:电子在干涉形成的分离能级间跃迁可形成多个响应带,这些响应带之间相互交叠可实现宽带响应;器件的暗电流在微安量级且随温度的变化不大。共振隧穿电流随温度的变化较小,是暗电流的主要组成部分;而热离子激发电流随温度的变化较大,但对暗电流的影响不大。