共查询到20条相似文献,搜索用时 703 毫秒
1.
《Lightwave Technology, Journal of》2009,27(10):1402-1407
2.
Lee W.-J. Kim J.-E. Park H. Y. Park S. Lee J.-M. Kim M. Ju J. J. Lee M.-H. 《Photonics Technology Letters, IEEE》2010,22(2):100-102
3.
《Lightwave Technology, Journal of》2009,27(14):2642-2648
4.
Waveguide Interconnection in Silica-Based Planar Lightwave Circuit Using Femtosecond Laser 总被引:1,自引:0,他引:1
《Lightwave Technology, Journal of》2009,27(18):4033-4039
5.
Young-Bo Cho Byung-Ki Yang Joo-Hyung Lee Jun-Bo Yoon Sang-Yung Shin 《Photonics Technology Letters, IEEE》2008,20(7):520-522
We demonstrate a silicon photonic wire filter using asymmetric sidewall long-period waveguide gratings for the first time. The proposed device consists of single-mode waveguide sections, a two-mode section with corrugated gratings, and taper sections to connect them. The operation of this device is based on the codirectional coupling between two core modes. By adopting a high refractive index contrast waveguide, the period and depth of grating are given as 4.44 m and 5 nm, respectively. Thus, the total length of long-period grating is significantly reduced to 260 m. The measured maximum attenuation at the center wavelength is about 13 dB. The bandwidth of the transmission dip is 15 nm. Finally, issues on the design and the performance of our device are discussed. 相似文献
6.
Sugimoto Y. Ikeda N. Carlsson N. Asakawa K. Kawai N. Inoue K. 《Quantum Electronics, IEEE Journal of》2002,38(7):760-769
An AlGaAs-based near-infrared 2-D photonic crystal (PC) with an air-bridge structure featuring defect waveguides has been developed. For the sample without defect waveguides, measurements of the optical transmission characteristics in the wavelength range from 850 nm to 1100 nm showed a deep attenuation due to a bandgap with 30-35 dB attenuation and transmittance of nearly 100% for the guided modes. Optical propagation properties of defect waveguides were obtained by two methods: measurements of transmission spectra and plan-view observations of the optical beam trace along the waveguide with an infrared-vidicon camera. 3-D finite-difference time-domain simulations for the band structure and transmission spectra in the air-bridge slab with and without defect waveguides have revealed the appearance of four defect propagation modes specific to the defect waveguide, between two slab modes for the defect-free photonic crystal slab. These defect modes were experimentally identified in the measured transmission spectra 相似文献
7.
Dominik Walter Vogt Rainer Leonhardt 《Journal of Infrared, Millimeter and Terahertz Waves》2016,37(11):1086-1095
We demonstrate broadband, low loss, and close-to-zero dispersion guidance of terahertz (THz) radiation in a dielectric tube with an anti-reflection structure (AR-tube waveguide) in the frequency range from 0.2 to 1.0 THz. The anti-reflection structure (ARS) consists of close-packed cones in a hexagonal lattice arranged on the outer surface of the tube cladding. The feature size of the ARS is in the order of the wavelength between 0.2 and 1.0 THz. The waveguides are fabricated with the versatile and cost efficient 3D-printing method. Terahertz time-domain spectroscopy (THz-TDS) measurements as well as 3D finite-difference time-domain simulations (FDTD) are performed to extensively characterize the AR-tube waveguides. Spectrograms, attenuation spectra, effective phase refractive indices, and the group-velocity dispersion parameters β 2 of the AR-tube waveguides are presented. Both the experimental and numerical results confirm the extended bandwidth and smaller group-velocity dispersion of the AR-tube waveguide compared to a low loss plain dielectric tube THz waveguide. The AR-tube waveguide prototypes show an attenuation spectrum close to the theoretical limit given by the infinite cladding tube waveguide. 相似文献
8.
A concept for dispersion compensation in transmission is proposed, based on modes anti-crossing in photonic crystal (PC) line-defect waveguides. Quasi-constant positive and negative dispersion is possible in order of 100 ps/nm/mm on the bandwidth of 100 GHz. An adiabatic taper is proposed for efficient coupling into PC structure. 相似文献
9.
Jing Ma Chun Jiang 《Quantum Electronics, IEEE Journal of》2008,44(8):763-769
In this paper, an asymmetric photonic crystal (PC) waveguide is proposed for slow light transmission. A row of air holes is removed to form a line-defect waveguide, and the lateral symmetry of the waveguide is broken by shifting the holes in the PC cladding on one side along the waveguide axis. Two structural parameters are carefully adjusted: the amount of shift compared with the array of holes in the cladding on the other side, and the radius of the holes closest to the waveguide core in the shifted PC cladding. In the asymmetric waveguide, it is possible to obtain flat band modes with low group velocity (c/50) and low dispersion (on the order of 104 ps2/km) over a signal bandwidth of 40 GHz. The delay-bandwidth product (DBP) of the proposed slow-light device is analyzed and compared with the DBP of the PC waveguides reported in literatures. We find that our structure yields a significant increase in DBP, and improves the effective bandwidth in which we can obtain slow modes with both low group velocity and vanishing dispersion. 相似文献
10.
《Microwave and Wireless Components Letters, IEEE》2008,18(8):509-511
11.
《Photonics Technology Letters, IEEE》2009,21(4):242-244
12.
硅基槽型微环谐振器及其调谐特性研究 总被引:7,自引:7,他引:0
仿真和实验研究了含槽型(slot)光波导的反馈波导型微环谐振器的特性,将槽型光波导集成到Si基微环谐振器中,丰富Si基光波导的功能,为新型光电子器件的实现提供途径。通过锥形波导结构实现从传统波导到槽型波导的模式转换,减小传输损耗,采用时域有限差分法(FDTD)研究了光功率的分布和模式转换过程。结果显示,光功率逐渐转移到锥形结构两侧的槽型波导中并最终形成槽型波导中的传输模式,通过优化锥形结构能实现较高的模式转换效率,可以达到90%以上。采用电子束刻写技术和等离子刻蚀技术制备了反馈波导型槽型微环谐振器。实验显示,锥形波导能够实现模式的转换,光传输过程良好。通过在槽型波导中填充电光聚合物来改变槽型光波导的折射率,测量结果显示,传输谱谐振峰发生了明显移动,移动幅度达到5.6nm,器件具备很好的可调谐性。 相似文献
13.
《Photonics Technology Letters, IEEE》2009,21(24):1789-1791
14.
《Microwave Theory and Techniques》1981,29(4):314-322
A structure is considered consisting of a waveguide 2 below cutoff, connected to waveguides above cutoff, 1 and 3, by means of suitable junctions. A dielectric resonator is introduced in waveguide 2. Its effect on the transmission curve of the structure is evaluated in the limit epsilon/sub r/spl rarr/spl infin/. Theoretical results are compared with experiment. 相似文献
15.
Tsu-Hsiu Wu Yi-Jen Chiu Fang-Zheng Lin 《Photonics Technology Letters, IEEE》2008,20(14):1261-1263
Based on a novel structure of waveguide, a broadband electroabsorption modulator (EAM) with low driving voltage and high extinction ratio has been demonstrated in this letter. The waveguide of InGaAsP-InP p-i-n layer structure is fabricated by two consecutive steps of selective undercut-wet-etching: 1)HCl : H3PO4 on p-InP (p- layer), and 2)H3PO4 : H2O2 : H2O on InGaAsP (active region), showing a wide ridge with a narrow undercut active region. Low capacitance and low cladding impedance can thus be simultaneously attained in such waveguides, leading to low microwave loss and high-speed electrooptical (EO) response. A ridge as wide as 8 mum with a 3-mum- wide active region and a 450-nm gap height in the undercut portion has been fabricated. A 350- mum -long waveguide of EAM is designed, revealing a high extinction ratio of > 30 dB (D.C.) and a modulation efficiency of > 20 dB/V (D.C.) with polarization-insensitive operation at a wavelength of 1550 nm. As high as 60 GHz of a 3-dB bandwidth is measured in the high-speed EO conversion. Calculations by an equivalent circuit model are quite fitted with the measurement, revealing that broadband performance is mainly attributed to the low microwave propagation loss in such waveguides. 相似文献
16.
《Photonics Technology Letters, IEEE》2009,21(5):268-270
17.
《Lightwave Technology, Journal of》2009,27(19):4330-4337
18.
Geis M. W. Spector S. J. Grein M. E. Schulein R. T. Yoon J. U. Lennon D. M. Deneault S. Gan F. Kaertner F. X. Lyszczarz T. M. 《Photonics Technology Letters, IEEE》2007,19(3):152-154
Submicrometer silicon photodiode waveguides, fabricated on silicon-on-insulator substrates, have photoresponse from <1270 to 1740 nm (0.8 AW-1 at 1550 nm) and a 3-dB bandwidth of 10 to 20 GHz. The p-i-n photodiode waveguide consists of an intrinsic waveguide 500times250 nm where the optical mode is confined and two thin, 50-nm-thick, doped Si wings that extend 5 mum out from either side of the waveguide. The Si wings, which are doped one p-type and the other n-type, make electric contact to the waveguide with minimal effect on the optical mode. The edges of the wings are metalized to increase electrical conductivity. Ion implantation of Si+ 1times10 13 cm-2 at 190 keV into the waveguide increases the optical absorption from 2-3 dBmiddotcm-1 to 200-100 dBmiddotcm-1 and causes the generation of a photocurrent when the waveguide is illuminated with subbandgap radiation. The diodes are not damaged by annealing to 450 degC for 15 s or 300 degC for 15 min. The photoresponse and thermal stability is believed due to an oxygen stabilized divacancy complex formed during ion implantation 相似文献
19.
《Microwave Theory and Techniques》1970,18(7):373-376
In a lens waveguide with a curved axis, light beams appreciably different in frequency split and take different paths due to the effect of chromatic aberration of lens. The deviation from a main beam can grow cumulatively through the curved lens waveguide. This effect knits permissible bandwidth to be transmitted without loss of beams. For bends having tilts and offsets at the connections to the straight waveguides, the deviation of the light beam from the guide axis due to the effect of chromatic aberration is derived. With random circular bends the bandwidth is inversely proportional to the square root of the number of bends and proportional to the average radius of curvature. For a normal design of the curved waveguide the allowable bandwidth is expected to be sufficiently broad for signal transmission, but it is narrow in the sense of optical frequency. 相似文献
20.
《Lightwave Technology, Journal of》2009,27(13):2257-2263