Roll‐to‐Roll Production of Layer‐Controlled Molybdenum Disulfide: A Platform for 2D Semiconductor‐Based Industrial Applications

A facile methodology for the large‐scale production of layer‐controlled MoS₂ layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll‐to‐roll‐based thermal decomposition is developed. The resulting 50 cm long MoS₂ layers synthesized on Ni foils possess excellent long‐range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS₂ layers by simply adjusting the concentration of (NH₄)₂MoS₄. Additionally, the capability of the MoS₂ for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS₂‐based field effect transistors exhibit unipolar n‐channel transistor behavior with electron mobility of 0.6 cm² V^?1 s^?1 and an on‐off ratio of ≈10³. The MoS₂‐based visible‐light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W^?1. Moreover, the MoS₂ layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec^?1. Based on these results, it is envisaged that the cost‐effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor‐based multifaceted applications.     

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier traps and nonradiative recombination centers. Here, self‐catalyzed p‐type GaAs nanowires (NWs) with a pure zinc blende (ZB) structure are first developed, and then a photodetector made from these NWs is fabricated. Due to the absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room‐temperature high photoresponsivity of 1.45 × 10⁵ A W^?1 and excellent specific detectivity (D*) up to 1.48 × 10¹⁴ Jones for a low‐intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW‐based photodetectors. These results demonstrate these self‐catalyzed pure‐ZB GaAs NWs to be promising candidates for optoelectronics applications.     

Roll‐to‐Roll processing of flexible devices and components

Next generation consumer electronic devices, including wearables are placing an ever increasing emphasis on form factor. This has resulted in an increase in the number of polymeric films used in their construction. As most of these polymeric materials are initially manufactured in the form of a roll, there has been a drive towards the utilization of so called roll‐to‐roll processing (R2R) in order to reduce both manufacturing line setup, cleanroom and materials costs. This paper will therefore describe some of the most important advances made in this field, including improvements in stack processing for the production of ITO based touch panel devices, the development of new processing platforms for high performance, low defectivity stacks for barrier film & patterning for R2R manufacture of thin film transistors.     

Ultrahigh‐Performance Self‐Powered Flexible Double‐Twisted Fibrous Broadband Perovskite Photodetector

Self‐powered flexible photodetectors without an external power source can meet the demands of next‐generation portable and wearable nanodevices; however, the performance is far from satisfactory becuase of the limited match of flexible substrates and light‐sensitive materials with proper energy levels. Herein, a novel self‐powered flexible fiber‐shaped photodetector based on double‐twisted perovskite–TiO₂–carbon fiber and CuO–Cu₂O–Cu wire is designed and fabricated. The device shows an ultrahigh detectivity of 2.15 × 10¹³ Jones under the illumination of 800 nm light at zero bias. CuO–Cu₂O electron block bilayer extends response range of perovskite from 850 to 1050 nm and suppresses dark current down to 10^?11 A. The fast response speed of less than 200 ms is nearly invariable after dozens of cycles of bending at the extremely 90 bending angle, demonstrating excellent flexibility and bending stability. These parameters are comparable and even better than reported flexible and even rigid photodetectors. The present results suggest a promising strategy to design photodetectors with integrated function of self‐power, flexibility, and broadband response.     

Roll‐to‐Roll Production of Graphene Hybrid Electrodes for High‐Efficiency,Flexible Organic Photoelectronics

Despite nearly two decades of research, the absence of ideal, flexible, and transparent electrodes has been the biggest bottleneck for realizing flexible and printable electronics via roll‐to‐roll (R2R) method. A fabrication of poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate):graphene:ethyl cellulose (PEDOT:PSS:G:EC) hybrid electrodes by R2R process, which allows for the elimination of strong acid treatment. The high‐performance flexible printable electrode includes a transmittance (T) of 78% at 550 nm and a sheet resistance of 13 Ω sq⁻¹ with excellent mechanical stability. These features arise from the PSS interacting strongly with the ethyoxyl groups from EC promoting a favorable phase separation between PEDOT and PSS chains, and the highly uniform and conductive G:EC enable rearrangement of the PEDOT chains with more expanded conformation surrounded by G:EC via the π–π interaction between G:EC and PEDOT. The hybrid electrodes are fully functional as universal electrodes for outstanding flexible electronic applications. Organic solar cells based on the hybrid electrode exhibit a high power conversion efficiency of 9.4% with good universality for active layer. Moreover, the organic light‐emitting diodes and photodetector devices hold the same level to or outperform those based on indium tin oxide flexible transparent electrodes.     

Lateral Monolayer MoSe2–WSe2 p–n Heterojunctions with Giant Built‐In Potentials

2D transition metal dichalcogenides (TMDs) have exhibited strong application potentials in new emerging electronics because of their atomic thin structure and excellent flexibility, which is out of field of tradition silicon technology. Similar to 3D p–n junctions, 2D p–n heterojunctions by laterally connecting TMDs with different majority charge carriers (electrons and holes), provide ideal platform for current rectifiers, light‐emitting diodes, diode lasers and photovoltaic devices. Here, growth and electrical studies of atomic thin high‐quality p–n heterojunctions between molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂) by one‐step chemical vapor deposition method are reported. These p–n heterojunctions exhibit high built‐in potential (≈0.7 eV), resulting in large current rectification ratio without any gate control for diodes, and fast response time (≈6 ms) for self‐powered photodetectors. The simple one‐step growth and electrical studies of monolayer lateral heterojunctions open up the possibility to use TMD heterojunctions for functional devices.     

Novel UV–Visible Photodetector in Photovoltaic Mode with Fast Response and Ultrahigh Photosensitivity Employing Se/TiO2 Nanotubes Heterojunction

A feasible strategy for hybrid photodetector by integrating an array of self‐ordered TiO₂ nanotubes (NTs) and selenium is demonstrated to break the compromise between the responsivity and response speed. Novel heterojunction between the TiO₂ NTs and Se in combination with the surface trap states at TiO₂ help regulate the electron transport and facilitate the separation of photogenerated electron–hole pairs under photovoltaic mode (at zero bias), leading to a high responsivity of ≈100 mA W^?1 at 620 nm light illumination and the ultrashort rise/decay time (1.4/7.8 ms). The implanting of intrinsic p‐type Se into TiO₂ NTs broadens the detection range to UV–visible (280–700 nm) with a large detectivity of over 10¹² Jones and a high linear dynamic range of over 80 dB. In addition, a maximum photocurrent of ≈10⁷ A is achieved at 450 nm light illumination and an ultrahigh photosensitivity (on/off ratio up to 10⁴) under zero bias upon UV and visible light illumination is readily achieved. The concept of employing novel heterojunction geometry holds great potential to pave a new way to realize high performance and energy‐efficient optoelectronic devices for practical applications.     

Roll‐to‐Roll Production of Transparent Silver‐Nanofiber‐Network Electrodes for Flexible Electrochromic Smart Windows

Electrochromic smart windows (ECSWs) are considered as the most promising alternative to traditional dimming devices. However, the electrode technology in ECSWs remains stagnant, wherein inflexible indium tin oxide and fluorine‐doped tin oxide are the main materials being used. Although various complicated production methods, such as high‐temperature calcination and sputtering, have been reported, the mass production of flexible and transparent electrodes remains challenging. Here, a nonheated roll‐to‐roll process is developed for the continuous production of flexible, extralarge, and transparent silver nanofiber (AgNF) network electrodes. The optical and mechanical properties, as well as the electrical conductivity of these products (i.e., 12 Ω sq^?1 at 95% transmittance) are comparable with those AgNF networks produced via high‐temperature sintering. Moreover, the as‐prepared AgNF network is successfully assembled into an A4‐sized ECSW with short switching time, good coloration efficiency, and flexibility.     

Rutile Nanorod/Anatase Nanowire Junction Array as Both Sensor and Power Supplier for High‐Performance,Self‐Powered,Wireless UV Photodetector

Self‐powered UV photodetectors based on TiO₂ nanotree arrays have captured much attention in recent years because of their many advantages. In this work, rutile/anatase TiO₂ (R/A‐TiO₂) heterostructured nanotree arrays are fabricated by assembling anatase nanowires as branches on rutile nanorods. External quantum efficiencies as high as 90% are reached at 325 nm. These high quantum efficiencies are related to the higher amount of light harvesting due to the larger surface area, the better separation ability of the photogenerated carriers by the rutile/anatase heterostructure, and the faster electron transport, related to the 1D nanostructure and lattice connection at the interface of the two kinds of TiO₂. Furthermore, a self‐powered wireless UV photodetector is shown with excellent wireless detection performance. Such devices will enable significant advances for next‐generation photodetection and photosensing applications.     

Photovoltaic–Pyroelectric Coupled Effect Induced Electricity for Self‐Powered Photodetector System

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7–4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8–20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near‐UV irradiations. Here, a ferroelectric BaTiO₃ film‐based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light‐induced photovoltaic–pyroelectric coupled effect. A self‐powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure.