Lead zirconate titanate thin film capacitors on electroless nickel coated copper foils for embedded passive applications

Lead zirconate titanate (PZT, 52/48) thin film capacitors were prepared on electroless Ni coated Cu foil by chemical solution deposition for printed wiring board embedded capacitor applications. Phase development, dielectric properties, and leakage characteristics of capacitors were investigated, in particular as a function of the process temperature. Dielectric properties of the capacitors were dependent on the crystallization temperature, and capacitance densities of more than 350 nF/cm² and loss tangent of less than 0.03 were measured for capacitors crystallized below 600 °C. Lowest leakage current densities (around 2 × 10^− 7 A/cm² at 10 V direct current (DC)) and highest breakdown fields could be obtained for capacitors crystallized at 650 °C.Capacitors with different thickness and a two-layer capacitor model were used in analyzing the interface layer between PZT and the underlying electroless Ni. From the capacitance and leakage measurements, it is suggested that the interface reaction layer has low permittivity (K around 30) and high defect concentration, which has an important effect on the electrical properties of capacitors. This interface is from the reaction of the electroless nickel layer with the adjacent PZT, and may specifically be moderated by the nickel phosphide (Ni-P) phase, transformed from amorphous Ni during the annealing step.The results have significant implications for embedded capacitors in printed wiring boards. They demonstrate that the process can be tuned to produce either voltage independent capacitors with low leakage and high breakdown fields (above 30 V DC), or the more usual hysteretic, switching, ferroelectric capacitors with higher capacitance densities.     

The effect of Sb2O5 additions on the dielectric properties of Ag(Nb0.8Ta0.2)O3 ceramics

The sintering behavior and dielectric properties for perovskite Ag(Nb_0.8Ta_0.2)O₃ ceramic with Sb₂O₅ doping was explored. A small amount of Sb₂O₅ (2.5 wt.%) led to high densification at temperatures < 1060 °C. The dielectric constant increased and the temperature coefficient decreased with increasing concentration of Sb₂O₅, and the dielectric constant reached 673, combined with a low temperature coefficient of 147 ppm/°C, and dielectric loss of 0.0044 (at 1 MHz) for the sample with 3.5 wt.% Sb₂O₅ sintered at 1080 °C.     

New powellite type oxides in Ca–R–Nb–Mo–O system (R = Y, La, Nd, Sm or Bi)—Their synthesis, structure and dielectric properties

New complex oxides having powellite (CaMoO₄) type structure in the Ca–R–Nb–Mo–O system (R = Y, La, Nd, Sm or Bi) were prepared employing the method of solid state reaction between the component oxides at high temperature (1000–1100 °C). The new compounds, CaRNbMoO₈ (R = Y, La, Nd, Sm, Bi) are colorless and electrical insulators. The dielectric constants (K at 1 MHz) of these compounds are in the range 14–33 and K shows very little variation in the temperature range 30–100 °C. Their temperature coefficient of dielectric constant (TCK) is negative, which varies from − 21 to − 220 ppm/°C.     

The magnetic and dielectric properties of microwave sintered yttrium iron garnet (YIG)

Yttrium iron garnet (YIG) material is widely used in microwave devices. Experiments show that microwave sintering (MS) treated YIG materials possess excellent properties with a saturation magnetization of 14.60 emu/g and coercive force 34.82 Oe. In the frequency range of 1 MHz–1.8 GHz, the relative dielectric constant is from 6.5 to 7.0, the line-width is 105 Oe, dielectric loss less than 0.09 and magnetic loss less than 0.7. Furthermore, the sintering time and temperature were significantly reduced from 20 h and 1300 °C for the conventional sintering (CS) process to 2 h and 900 °C for MS technique, respectively.     

Synthesis of single nanocrystal phase γ′-Fe4N on NaCl substrate by DC magnetron sputtering

The single-phase γ′-Fe₄N nanocrystal magnetic films with grain size of d = 40–60 nm were synthesized on single crystal NaCl (1 0 0) substrate by DC magnetron sputtering at 150 °C. The structure, morphology of the single-phase γ′-Fe₄N films were characterized using transmission electron microscopy (TEM), X-ray diffraction (XRD), and the magnetic properties of samples prepared at different substrate temperatures were investigated by superconducting quantum interference device (SQUID). It is shown that substrate temperature has a significant influence on the crystalline structure and magnetic properties for Fe–N films. As substrate temperature was increased, the saturation magnetization for the deposited films increased, but the coercivity reduced.     

Structure, synthesis and high dielectric property of (NaBi)(NbCr)O6 pyrochlores

Pyrochlores with composition (NaBi)(NbCr)O₆ were sintered in the temperature range of 1100–1250 °C. Dielectric properties of the ceramics were investigated in a wide range of temperatures of − 15 to 200 °C and frequencies of 1–800 kHz. The suitable sintering temperatures for (NaBi)(NbCr)O₆ ceramics are suggested from 1150 to 1200 °C. The dielectric constant behavior reflects, in our opinion, the formation of the space charge and the orientational polarization. The pyrochlores have convex resistivity-temperature characteristics around the transition point, and exhibit the negative temperature coefficient of resistance characteristics. The activation energies of conductivity of samples were obtained at various sintering temperatures.     

Thermal shock behavior of nano-sized SiC particulate reinforced AlON composites

Aluminum oxynitride (AlON) has been considered as a potential ceramic material for high-performance structural and advanced refractory applications. Thermal shock resistance is a major concern and an important performance index of high-temperature ceramics. While silicon carbide (SiC) particles have been proven to improve mechanical properties of AlON ceramic, the high-temperature thermal shock behavior was unknown. The aim of this investigation was to identify the thermal shock resistance and underlying mechanisms of AlON ceramic and 8 wt% SiC–AlON composites over a temperature range between 175 °C and 275 °C. The residual strength and Young's modulus after thermal shock decreased with increasing quenching temperature and thermal shock times due to large temperature gradients and thermal stresses caused by abrupt water-quenching. A linear relationship between the residual strength and thermal shock times was observed in both pure AlON and SiC–AlON composites. The addition of nano-sized SiC particles increased both residual strength and critical temperature from 200 °C in the monolithic AlON to 225 °C in the SiC–AlON composites due to the toughening effect, the lower coefficient of thermal expansion and higher thermal conductivity of SiC. The enhancement of the thermal shock resistance in the SiC–AlON composites was directly related to the change of fracture mode from intergranular cracking along with cleavage-type fracture in the AlON to a rougher fracture surface with ridge-like characteristics, crack deflection, and crack branching in the SiC–AlON composites.     

Study on tensile properties and microstructure of cast AZ91D/AlN nanocomposites

AZ91D is a widely used magnesium alloy, but its application is generally limited to below 150 °C because of its weak creep resistance and tensile properties at elevated temperatures. In this study, high temperature (200 °C) tensile properties including yield strength and tensile strength of AZ91D are much improved by adding only about 1.0 wt% AlN nanoparticles in the AZ91D matrix through an innovative ultrasonic cavitation based dispersion of nanoparticles. The good ductility of AZ91D is also retained in AZ91D/1%AlN nanocomposites. It is found that ultrasonic cavitation based solidification processing is very effective to disperse AlN nanoparticles in AZ91D melts, which is difficult to obtain by traditional mechanical stirring methods. With a good combination of high temperature yield strength, tensile strength and ductility, AZ91D/1%AlN nanocomposite is promising as a new class of structural materials to be used at temperatures up to 200 °C or higher.     

Influence of retrogression temperature and time on the mechanical properties and exfoliation corrosion behavior of aluminium alloy AA7150

The tensile properties, exfoliation corrosion behavior and microstructures of the retrogression and re-aging (RRA) treated aluminum (Al) alloy AA7150 were studied. AA7150 was retrogressed at different temperatures (175 °C, 185 °C and 195 °C) for various times. It is found that as the hardness of the retrogressed AA7150 approaches the near-peak condition, the corresponding RRA treated AA7150 possesses good exfoliation corrosion resistance without strength loss. By retrogressing at 175 °C, the retrogression time can be extended to 3 h, the RRA treated AA7150 possesses a strength as high as that of conventional AA7150-T6, and its exfoliation corrosion resistance is in the vicinity to that of AA7150-T73. This enhanced exfoliation corrosion resistance was associated with the more separated η precipitates at the grain boundary. AA7150-T6 is mainly strengthened by fine GP zones with high number density, while the intra-grain micro-structure of AA7150-RRA retrogressed at 175 °C for 3 h is characterized by relatively coarse η′ precipitates.     

Mechanical and dielectric properties of porous Si3N4–SiO2 composite ceramics

In order to prepare a structural/functional material with not only higher mechanical properties but also lower dielectric constant and dielectric loss, a novel process combining oxidation-bonding with sol–gel infiltration-sintering was developed to fabricate a porous Si₃N₄–SiO₂ composite ceramic. By choosing 1250 °C as the oxidation-bonding temperature, the crystallization of oxidation-derived silica was prevented. Sol–gel infiltration and sintering process resulted in an increase of density and the formation of well-distributed micro-pores with both uniform pore size and smooth pore wall, which made the porous Si₃N₄–SiO₂ composite ceramic show both good mechanical and dielectric properties. The ceramic with a porosity of 23.9% attained a flexural strength of 120 MPa, a Vickers hardness of 4.1 GPa, a fracture toughness of 1.4 MPa m^1/2, and a dielectric constant of 3.80 with a dielectric loss of 3.11 × 10⁻³ at a resonant frequency of 14 GHz.     

Tribological behavior of NiTi alloy in martensitic and austenitic states

The wear behavior of Ti–50.3 at% Ni alloy in martensitic and austenitic states was studied. The alloy was prepared in a Vacuum Induction Melting furnace, forged at 800 °C, annealed at 1000 °C for 12 h, quenched in water, then aged at 400 °C for 1 h and followed by water quenching. The phase transformation temperatures were measured by differential scanning calorimetry. The shape memory and pseudoelasticity properties of NiTi were obtained by three-point bending test. The highest deflection recovery due to the pseudoelasticity was observed at temperature of 50 °C. The wear tests were conducted using a pin-on-disk tribometer in a water media at temperatures ranging from 0 °C to 50 °C. The results showed that the wear rate of NiTi alloy was decreased as the wear testing temperature increased. This was mainly attributed to the pseudoelasticity effect and higher strength of the alloy in the austenitic state at temperature of 50 °C. The results also showed a lower coefficient of friction in the austenitic state compared to the martensitic state.     

Preparation temperature effect on the synthesis of various carbon nanostructures

Various carbon nanostructures (CNs) have been prepared by a simple deposition technique based on the pyrolysis of a new carbon source material tetrahydrofuran (THF) mixed with ferrocene using quartz tube reactor in the temperature range 700–1100 °C. A detailed study of how the synthesis parameter such as growth temperature affects the morphology of the carbon nanostructures is presented. The obtained CNs are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), electron dispersive scattering (EDS), thermogravimetry analysis (TGA), Raman and transmission electron microscope (TEM). It is observed that at 700 °C, normal CNTs are formed. Iron filled multi-walled carbon nanotubes (MWCNTs) and carbon nanoribbons (CNRs) are formed at 950 °C. Magnetic characterization of iron filled MWCNTs and CNRs studied at 300 K by superconducting quantum interference device (SQUID) reveals that these nanostructures have an enhanced coercivity (Hc = 1049 Oe) higher than that of bulk Fe. The large shape anisotropy of MWCNTs, which act on the encapsulated material (Fe), is attributed for the contribution of the higher coercivity. Coiled carbon nanotubes (CCNTs) were obtained as main products in large quantities at temperature 1100 °C.     

Strength and toughness of cellular SiC at elevated temperature

Bending strength and toughness of β-SiC foams were measured from ambient temperature to 1400 °C. It was found that SiC was able to maintain the mechanical properties up to 1200 °C even after long-term exposure at this temperature. Creep deformation was not detected and the negative effects of oxidation at this temperature were balanced by the healing effect induced by the formation of SiO₂. Nevertheless, the mechanical properties were rapidly degraded at 1400 °C as a consequence of massive oxidation of SiC.     

Microstructure and mechanical properties of an HfB2 + 30 vol.% SiC composite consolidated by spark plasma sintering

An ultra-high-temperature HfB₂–SiC composite was successfully consolidated by spark plasma sintering. The powder mixture of HfB₂ + 30 vol.% β-SiC was brought to full density without any deliberate addition of sintering aids, and applying the following conditions: 2100 °C peak temperature, 100 °C min⁻¹ heating rate, 2 min dwell time, and 30 MPa applied pressure. The microstructure consisted of regular diboride grains (2 μm mean size) and SiC particulates evenly distributed intergranularly. The only secondary phase was monoclinic HfO₂. The incorporated SiC particulates played a key role in enhancing the sinterability of HfB₂. Flexural strength at 25 °C and 1500 °C in ambient air was 590 ± 50 and 600 ± 15 MPa, respectively. Fracture toughness at room temperature (RT) (3.9 ± 0.3 MPa √m) did not decrease at 1500 °C (4.0 ± 0.1 MPa √m). Grain boundaries depleted of secondary phases were fundamental for the retention of strength and fracture toughness at high temperature. The thermal shock resistance, evaluated through the water-quenching method, was 500 °C.     

Research on the hot deformation behavior and graphite morphology of spheroidal graphite cast iron at high strain rate

The hot deformation behavior of spheroidal graphite cast iron (SGCI) was investigated quantitatively from 600 °C to 950 °C at high strain rate of 10 s⁻¹ by compression tests on a Gleeble-1500 simulator. The results show that the peak strain increases gradually with increasing deformation temperatures in the range of 600–800 °C and decreases when the temperature is raised to 800 °C and above. The optimum deformation temperature range is determined at 700–900 °C. The graphite particles become spindles or flakes after deformation, even some graphite collapse in the compressed specimens with about 0.7 peak strains. The graphite area fraction decreases as the temperature increases, at the same time, the high peak strain promotes the dissolving of carbon.     

Dielectric properties of Sb2O3-doped Ba0.672Sr0.32Y0.008TiO3

Sb₂O₃-doped Ba_0.672Sr_0.32Y_0.008TiO₃ (BSYT) dielectric ceramics were prepared by conventional solid state method, and their dielectric properties were investigated with variation of Sb₂O₃ doping content and sintering temperature. The X-ray diffraction patterns indicated that all the BSYT specimens possessed the perovskite polycrystalline structure. The experimental results reveal that the introduction of Sb₂O₃ into Ba_0.672Sr_0.32Y_0.008TiO₃ can control the grain growth, reduce the relative dielectric constant and dielectric loss, shift the Curie temperature to lower temperature and significantly improve the thermal stability of the BSYT ceramics. The samples doped with 1.6 wt.% Sb₂O₃ sintered at 1320 °C for 2 h exhibited attractive properties, including high relative dielectric constant (> 1500), low dielectric loss (< 40 × 10^− 4), low temperature coefficient of capacitor(< ± 35%) over a wide temperature range from − 25 °C to + 85 °C.     

Evaluation of high temperature dielectric films for high voltage power electronic applications

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200°C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250°C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200°C. However, above 200°C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.     

Serrated flow behavior in a near alpha titanium alloy IMI 834

Serrated behavior of near alpha titanium alloy IMI 834 has been studied at elevated temperature from 400 °C to 475 °C. Serrations morphology was found as A type of locking serrations followed by B type serrations at 400 °C. E type of serrations has been observed at higher strains at 425 °C. B type and unlocking serrations of C_A type at 450 °C and again A and C_B type serrations were found at 475 °C. In strength parameters, anomalous tensile behavior was found in the variation of tensile strength and yield strength with test temperature in the temperature range between 400 °C and 475 °C. However, the variation of normalized flow stress showed regions I–III with test temperature. Regions I and III correspond to normal tensile behavior and region II corresponds to anomalous tensile behavior. Blue brittle temperature of IMI 834 was attributed at 450 °C by confirming minimum ductility of 8.2%. In present study, a different approach has been adopted to show the change in deformation behavior during serrated region called as abrupt change in strain path. Maximum irregularity in flow behavior has been observed at 450 °C and 475 °C. Room temperature fractographic features showed transgranular features whereas mixed ductile and cleavage fracture has been observed in the temperature range between 400 °C and 475 °C. However, reverse slope behavior has been observed in the plot of critical strain versus test temperature at 450 °C, which could be due to silicide precipitation. In the present study, interaction of dislocations with interstitial/substitutional solutes is responsible for dynamic strain aging in IMI 834.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

Interferometric determination of the temperature dependence of the refractive index of relaxor PLZT ceramics under DC bias

Changes in the refractive indices Δn₁ and Δn₃ of clamped transparent relaxor ferroelectric (9.5/65/35) and (9.0/65/35) PLZT ceramics were measured as a function of temperature ranging from −30 °C to 60 °C, and at various transversely applied DC electric fields . It was found that the refractive index of both PLZT compositions increased linearly with temperature under no DC bias, indicating a constant electronic polarizability of the samples in the tested temperature range. The rate of increase of Δn₃ with temperature became higher for both compositions upon the application a DC bias field () due to increased electronic polarizability of the samples, while the rate of increase of Δn₁ with temperature remained unchanged and was independent of the DC field applied. The quadratic electro-optic coefficients of these two PLZT compositions were also obtained at 0, 20 and 40 °C, and a significant non-linearity was observed: an 85% decrease in the electro-optic coefficient of PLZT (9.5/65/35) was measured at 40 °C compared to 0 °C, while a similar 60% drop was measured for PLZT (9.0/65/35).