无卤阻燃尼龙66/蒙脱土纳米复合材料的制备及性能研究

选用有机插层剂对蒙脱土(MMT)进行有机化处理后,使用熔融插层法制备了无卤阻燃尼龙66/有机蒙脱土(OMMT)纳米复合材料,测试了其力学性能及阻燃性能.结果表明,有机蒙脱土和少量纳米SiO2的加入能够提高材料的力学性能,当SiO2加入量为2%、蒙脱土含量为3%时,材料的冲击性能相对提高了19%,拉伸与弯曲性能也有所提高;当OMMT:SiO2为3:2,APP:MA为5:4,ZnO:APP比值为1.5:10时,材料的极限氧指数较纯聚合物提高了33.3%.     

原位乳液插层法制备PBA/OMMT纳米复合母料及其在ABS中的应用

通过原位乳液插层法制备高有机蒙脱土(OMMT)含量的聚丙烯酸丁酯/有机蒙脱土(PBA/0MMT)纳米复合物,将其作为母料与ABS进一步熔融插层制得力学性能良好的ABS/OMMT纳米复合材料,并通过XRD、TGA和TEM等对材料进行了表征.结果表明:制得的PBA/OMMT母料为插层型纳米复合物,OMMT片层间距从2.38nm增大到3.85nm;采用母料法制备ABS/OMMT纳米复合材料,ABS链段易插层进入OMMT层间,使OMMT片层在ABS基体中达到剥离并以纳米尺度均匀分散,较好地保持了ABS的缺口冲击强度.     

St-PMI-AN/蒙脱土纳米复合材料的制备与性能

采用乳液插层聚合的方法制备了苯乙烯（St）-N-苯基马来酰亚胺（PMI）-丙烯腈（AN）/蒙脱土纳米复合材料,并对复合材料的结构、热性能及力学性能进行了表征.结果表明,与蒙脱土插层复合后,复合材料的综合性能有很大提高.采用未经有机化处理的蒙脱土（MMT）制备St-PMI-AN/MMT纳米复合材料,制备工艺比采用有机化蒙脱土（OMMT）简单,而且得到的复合材料的综合性能与St-PMI-AN/OMMT相当,甚至其冲击强度略高.     

HIPS/OMMT/NiO复合材料的阻燃性能

用熔融插层方法制备了高抗冲聚苯乙烯/蒙脱土/氧化亚镍(HIPS/OMMT/NiO)复合材料,碳元素分析结果表明,NiO的添加有效地促进了聚合物的炭化,锥形量热仪结果表明,HIPS/OMMT/NiO复合材料的阻燃性能比HIPS/OMMT复合材料有显著提高,结合碳元素分析及燃烧残余炭层的扫描电镜图片探讨了其阻燃机理,并提出了纳米球形粒子填充蒙脱土三维网络结构孔洞的模型,对设计新型插层复合阻燃材料有重要的理论借鉴意义。     

溶液插层法制备PPC/OMMT纳米复合材料及性能表征

通过溶液插层法制备了聚甲基乙撑碳酸酯/有机蒙脱土(PPC/OMMT)纳米复合材料,采用X射线衍射仪、热失重分析仪、透射电子显微镜(TEM)、动态力学性能测试仪(DMA)等对PPC/OMMT的性能进行了表征.XRD和TEM测试表明,OMMT均匀分散于PPC基体中并形成了插层型的纳米复合结构;DMA分析结果表明,复合材料的...     

聚氨酯/聚甲基丙烯酸甲酯/有机蒙脱土纳米复合材料的制务、结构与性能

首次将插层纳米复合技术与互穿聚合物网络（IPN）技术相结合,通过同步插层聚合法制备了聚氨酯/聚甲基丙烯酸甲酯/有机蒙脱土（PU/PMMA/OMMT）纳米复合材料.XRD、SEM、TGA等研究表明,在聚氨酯/有机蒙脱土（PU/OMMT）体系中蒙脱土以40～700 nm的团聚体不均匀地分散在聚氨酯基体中,且部分蒙脱土被插层,其层间距增加了0.95nm,体系为插层型纳米复合材料.PU/PMMA/OMMT体系中蒙脱土以20～80nm的粒子分布于聚合物基体中,且蒙脱土的插层效果显著,是PU/OMMT体系的2.5倍,形成了插层型纳米复合材料.同时,蒙脱土的加入使得聚氨酯和聚甲基丙烯酸甲酯的互穿聚合物网络（PU/PMMA-IPN）体系中PU相与PMMA相间相分离更明显,塑性相畴粒子尺寸显著增加,且各相中两组分相互作用加强,分布更均匀.PU/PMMA/OMMT纳米复合材料的热稳定性高于其他材料.同时对其力学性能进行了研究,发现其力学性能明显优于聚氨酯、基于聚氨酯和PU/PMMA-IPN和PU/OMMT纳米复合材料.     

耐湿热老化三元复合材料OMMT/EP/CF的制备研究

为提高碳纤维复合材料的耐湿热老化性能以及力学性能,通过有机化蒙脱土(OMMT)改性环氧树脂(EP)制备了有机化蒙脱土/环氧树脂/碳纤维(OMMT/CF/EP)复合材料,研究了OMMT的插层效果,OMMT加入质量分数和类型对环氧树脂气体阻隔性及对制备的OMMT/CF/EP复合材料的剪切性能、耐湿热老化性能等的影响.研究结...     

聚氨酯弹性体/有机蒙脱土纳米复合材料合成和性能

采用性能优异的有机插层剂对蒙脱土(MMT)进行改性,制备有机化蒙脱土(OMMT)。通过单体插层法合成了聚氨酯弹性体(EPU)/OMMT纳米复合材料;采用红外光谱(FTIR)、X衍射(WAXD)、透射电镜(TEM)等手段分析了材料结构,并比较了该纳米复合材料的物理机械性能。     

改性菜籽油/有机蒙脱土纳米复合材料的制备及性能

首先以菜籽油、乙二胺、丙烯酸为原料,合成改性菜籽油(KRF),然后将其与有机改性蒙脱土(OMMT)复合制备了改性菜籽油/有机蒙脱土纳米复合材料(KRF/OMMT)。红外光谱分析结果表明,已成功制得了KRF/OMMT复合材料;X射线衍射(XRD)分析结果表明,KRF能在蒙脱土中进行插层;热重分析(TGA)结果表明,蒙脱土的引入使纳米复合材料的起始热分解温度升高,最高可达257℃。将KRF/OMMT应用于皮革加脂工艺,对加脂后坯革的阻燃性能检测结果表明,采用纳米复合材料加脂的坯革的有焰燃烧时间从146s可降至74s,阴燃时间从958s可降至11s,极限氧指数从14.8%增至21%,表明纳米复合材料能赋予坯革良好的阻燃性能。     

乳液插层法制备天然胶/蒙脱土复合材料的性能

先用乳液插层法制共沉胶,再通过熔融混炼法制备有机化蒙脱土(OMMT)/天然胶乳复合材料。研究复合材料的结构、拉伸性能、硬度、热性能。结果表明:OMMT/天然胶乳形成了插层型纳米结构。与天然橡胶相比,OMMT/天然胶乳复合材料的拉伸强度、硬度增加。当OMMT含量为6%时,能获得拉伸强度、断裂伸长率较优的材料。该OMMT/天然胶复合材料的力学性能超过白碳黑对材料的增强效果。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.