Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

The semiconductor industry is currently challenged by the emergence of Internet of Things, Big data, and deep-learning techniques to enable object recognition and inference in portable computers. These revolutions demand new technologies for memory and computation going beyond the standard CMOS-based platform. In this scenario, resistive switching memory (RRAM) is extremely promising in the frame of storage technology, memory devices, and in-memory computing circuits, such as memristive logic or neuromorphic machines. To serve as enabling technology for these new fields, however, there is still a lack of industrial tools to predict the device behavior under certain operation schemes and to allow for optimization of the device properties based on materials and stack engineering. This work provides an overview of modeling approaches for RRAM simulation, at the level of technology computer aided design and high-level compact models for circuit simulations. Finite element method modeling, kinetic Monte Carlo models, and physics-based analytical models will be reviewed. The adaptation of modeling schemes to various RRAM concepts, such as filamentary switching and interface switching, will be discussed. Finally, application cases of compact modeling to simulate simple RRAM circuits for computing will be shown.     

Current status of resistive nonvolatile memories

Several emerging nonvolatile memories (NVMs) such as ferroelectric memory, magnetoresistive rams and ovonic universal memory are being developed for possible applications. Resistive random access memory (RRAM) is another interesting competitor in the class of NVMs. The RRAM is based on a large change in electrical resistance when the memory film is exposed to voltage or current pulses, and can keep high or low resistance states without any power. The ideal RRAM should have the superior properties of reversible switching, long retention time, multilevel switching, simple structure, small size, and low operating voltage. Perovskite oxides, transition metal oxides, and molecular materials were found to have resistive memory properties. This presentation reviews the ongoing research and development activities on future resistance NVMs technologies incorporating these new memory materials. The possible basic mechanisms for their bistable resistance switching are described. The effect of processing, composition, and structure on the properties of resistive memory materials and consequently the devices are discussed.     

Toward reliable RRAM performance: macro- and micro-analysis of operation processes

Resistive random access memory (RRAM) technology promises superior performance and scalability while employing well-developed fabrication processes. Conductance in insulating oxides employed in RRAM devices can be strongly affected by atomic-level changes that makes cell switching properties extremely sensitive to operation conditions inducing local structural modifications. This opens an opportunity to condition the memory cell stack by forming a conductive filament capable of high frequency, low energy switching. Certain materials with pre-existing conductive paths, in particular some polycrystalline oxides, like hafnia, are shown to respond well to this approach. For this class of materials, the concept of ultra-fast pulse technique as an ultimate method for assessing RRAM switching capabilities in circuitry operations is discussed. Hafnia-based cells demonstrate compliance-free (1R) forming with no current overshoot, low operation currents, and reduced variability.     

电动汽车逆变驱动系统精确仿真平台的研究

建立了精确的仿真平台,以指导器件选型,评估低感膜电容和叠层母线排等技术,以及实现电动汽车逆变驱动系统的高功率密度及高可靠性。该平台严格按照实际工况来选择电路参数,器件本身及互连线的寄生参数也不能忽略。分析了电动汽车驱动系统的开关机制和寄生参数分布,详细介绍了仿真平台的建模和参数提取过程,实验结果验证了该仿真平台的有效性。     

AlGaN/GaN异质结肖特基二极管研究进展

氮化镓GaN(gallium nitride)作为第三代半导体材料的代表之一,具有临界击穿电场强、耐高温和饱和电子漂移速度高等优点,在电力电子领域有广泛的应用前景。GaN基器件具有击穿电压高、开关频率高、工作结温高、导通电阻低等优点,可以应用在新型高效、大功率的电力电子系统。总结了AlGaN/GaN异质结肖特基二极管SBD(Schottky barrier diode)目前面临的问题以及目前AlGaN/GaN异质结SBD结构、工作原理及结构优化的研究进展。重点从AlGaN/GaN异质结SBD的肖特基新结构和边缘终端结构等角度,介绍了各种优化SBD性能的方法。最后,对器件的未来发展进行了展望。     

大型核电厂用电快切的数模仿真

应用RTDS实时数字仿真系统对秦山第三核电有限公司厂用电源切换的不同运行工况进行仿真计算研究,从而对该厂厂用电系统继电保护和同期装置的设置可靠性进行了全面的分析,在结合现场实际所做的仿真计算分析研究基础上,提出了可行的运行设备设置方式和建议,以提高厂用电快切的可靠性。     

Resistive random access memory (RRAM) technology: From material,device, selector, 3D integration to bottom-up fabrication

Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.     

基于IEC 61850标准的变电站自动化系统研究

变电站自动化系统在实现控制、监视和保护功能的同时，为了实现不同厂家的设备达到信息共享，使变电站自动化系统成为开放系统，还应具有互操作性。为此，国际电工委员会(IEC)制定了变电站内通信网络和系统标准体系——IEC61850。文章在分析IEC61850标准的信息分层、面向对象的数据对象统一建模、数据自描述和抽象通信服务映射等概念的基础上，提出了一种符合IEC61850标准的变电站内通信系统的框架模型。同时，遵循面向对象建模和抽象服务映射的思想，对变电站内智能电子设备(IED)统一硬件平台设计和软件系统的实现方法以及应该注意的相关问题进行了详细讨论。为变电站自动化系统的互操作性、可扩展性和高可靠性要求的实现提供了依据。     

Theoretical insights and experimental characterization of $$\hbox {HfO}_2$$-based OxRRAMs operation

The intensive research in resistive random access memories (RRAM) field has brought in significant improvements in the performance, optimization and reliability of the devices as well as more understanding on their operation. This was made possible through the combination of different tools starting from material engineering to device characterization, modeling and simulations. In this review, we bring an overview of our recent work on RRAM through experimental characterization and first-principles calculations. We explore the effects of metal electrodes on the switching performance and conductive filament (CF) stability of \(\hbox {HfO}_2\) oxide-based RRAM (OxRRAM). With the insight gained from the experimental data, we employ first-principles calculations to have a better microscopic understanding on OxRRAM operation. We show that CF stability and device operating voltages strongly depend on the electrode material. Ti being an electrode material of high interest, we investigate the type of \(\hbox {Ti/HfO}_2\) interface that may be formed and propose a probable composition. We also study the formation and migration of extended Frenkel-pair (EFP) defect in \(\hbox {HfO}_2\) which we consider to be the prototype defect responsible for OxRRAM degradation leading to CF formation. This EFP emission occurs through a cascading migration of O atoms inside \(\hbox {HfO}_2\) lattice. Based on EFP formation and diffusion, we present a simplified CF formation model. Finally, we study low resistance data retention failure in OxRRAM through \(\hbox {HfO}_2\), \(\hbox {Hf}_{1x}\hbox {Al}_{2x}\hbox {O}_{2+x}\) (HfAlO) and \(\hbox {Hf}_{1-x}\hbox {Ti}_{x}\hbox {O}_{2}\) (HfTiO) type of cells. We link its origin to the lateral diffusion of oxygen vacancies at the constriction/tip of the conductive filament in \(\hbox {HfO}_2\)-based RRAM.     

$${ SIM}^2{ RRAM}$$: a physical model for RRAM devices simulation

In the last few years, resistive random access memory (RRAM) has been proposed as one of the most promising candidates to overcome the current Flash technology in the market of non-volatile memories. These devices have the ability to change their resistance state in a reversible and controlled way applying an external voltage. In this way, the resulting high- and low-resistance states allow the electrical representation of the binary states “0” and “1” without storing charge. Many physical models have been developed with the aim of understanding the mechanisms that control the resistive switching. In this work, we have compiled the main theories accepted as well as their corresponding models for the conduction characteristics. In addition, simulation tools play a very important role in the task of checking these theories and understanding these mechanisms. For this reason, the simulation tool called \(\hbox {SIM}^{2}\hbox {RRAM}\) has been presented. This simulator is capable of replicating the global behavior of RRAM cell based on \(\hbox {HfO}_{x}\).     

低压电器的可靠性及其试验研究(二)

从可靠性的定义出发,阐述了低压电器可靠性的重要性。详细介绍了国外有关低压电器的可靠性标准,开展可靠性试验研究和现场调查的内容和结果,并列举IEC标准中有关低压电器可靠性的规定。文章着重介绍了我国开展低压电器产品可靠性试验研究和考核评定工作。涉及的产品包括:电磁式中间继电器、小容量交流接触器、切换电容接触器、有填料熔断器、剩余电流动作断路器、框架式断路器和塑壳武断路器等。详细介绍上述各类产品的可靠性试验内容、步骤、可靠性试验装置、可靠性指标和试验方法、可靠性考核评定及其结果以及可靠性增长试验研究等。最后对我国低压电器可靠性试验研究工作提出建议。     

低压电器的可靠性及其试验研究(三)

从可靠性的定义出发,阐述了低压电器可靠性的重要性。详细介绍了国外有关低压电器的可靠性标准,开展可靠性试验研究和现场调查的内容和结果,并列举IEC标准中有关低压电器可靠性的规定。文章着重介绍了我国开展低压电器产品可靠性试验研究和考核评定工作。涉及的产品包括:电磁式中间继电器、小容量交流接触器、切换电容接触器、有填料熔断器、剩余电流动作断路器、框架式断路器和塑壳式断路器等。详细介绍上述各类产品的可靠性试验内容、步骤、可靠性试验装置、可靠性指标和试验方法、可靠性考核评定及其结果以及可靠性增长试验研究等。最后对我国低压电器可靠性试验研究工作提出建议。     

低压电器的可靠性及其试验研究(一)

从可靠性的定义出发,阐述了低压电器可靠性的重要性。详细介绍了国外有关低压电器的可靠性标准,开展可靠性试验研究和现场调查的内容和结果,并列举IEC标准中有关低压电器可靠性的规定。文章着重介绍了我国开展低压电器产品可靠性试验研究和考核评定工作。涉及的产品包括:电磁式中间继电器、小容量交流接触器、切换电容接触器、有填料熔断器、剩余电流动作断路器、框架式断路器和塑壳式断路器等。详细介绍上述各类产品的可靠性试验内容、步骤、可靠性试验装置、可靠性指标和试验方法、可靠性考核评定及其结果以及可靠性增长试验研究等。最后对我国低压电器可靠性试验研究工作提出建议。     

低压电器的可靠性及其试验研究(四)

从可靠性的定义出发,阐述了低压电器可靠性的重要性。详细介绍了国外有关低压电器的可靠性标准,开展可靠性试验研究和现场调查的内容和结果,并列举IEC标准中有关低压电器可靠性的规定。文章着重介绍了我国开展低压电器产品可靠性试验研究和考核评定工作。涉及的产品包括:电磁式中间继电器、小容量交流接触器、切换电容接触器、有填料熔断器、剩余电流动作断路器、框架式断路器和塑壳式断路器等。详细介绍上述各类产品的可靠性试验内容、步骤、可靠性试验装置、可靠性指标和试验方法、可靠性考核评定及其结果以及可靠性增长试验研究等。最后对我国低压电器可靠性试验研究工作提出建议。     

低压电器的可靠性及其试验研究(五)

从可靠性的定义出发，阐述了低压电器可靠性的重要性。详细介绍了国外有关低压电器的可靠性标准，开展可靠性试验研究和现场调查的内容和结果，并列举IEC标准中有关低压电器可靠性的规定。文章着重介绍了我国开展低压电器产品可靠性试验研究和考核评定工作。涉及的产品包括：电磁式中间继电器、小容量交流接触器、切换电容接触器、有填料熔断器、剩余电流动作断路器、框架式断路器和塑壳式断路器等。详细介绍上述各类产品的可靠性试验内容、步骤、可靠性试验装置、可靠性指标和试验方法、可靠性考核评定及其结果以及可靠性增长试验研究等。最后对我国低压电器可靠性试验研究工作提出建议。     

Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films

Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure. The resistive random access memory (RRAM) capacitor of a Pt/NiO/Pt structure exhibited unipolar switching characteristics and bistable resistivities for 200 repeated switching cycles. Furthermore, RRAM nanobits array was formed on the NiO thin films by applying a bias. The RRAM nanobits had a diameter of approximately 8 nm and were observed via a conducting atomic force microscope (CAFM). The density of the RRAM nanobits array was estimated to be approximately 0.64 Tbit/cm².     

Effects of electrical leakage currents on MEMS reliability and performance

Electrostatically driven MEMS devices commonly operate with electric fields as high at 10/sup 8/ V/m applied across the dielectric between electrodes. Even with the best mechanical design, the electrical design of these devices has a large impact both on performance (e.g., speed and stability) and on reliability (e.g., corrosion and dielectric or gas breakdown). In this paper, we discuss the reliability and performance implications of leakage currents in the bulk and on the surface of the dielectric insulating the drive (or sense) electrodes from one another. Anodic oxidation of poly-silicon electrodes can occur very rapidly in samples that are not hermetically packaged. The accelerating factors are presented along with an efficient early-warning scheme. The relationship between leakage currents and the accumulation of quasistatic charge in dielectrics are discussed, along with several techniques to mitigate charging and the associated drift in electrostatically actuated or sensed MEMS devices. Two key parameters are shown to be the electrode geometry and the conductivity of the dielectric. Electrical breakdown in submicron gaps is presented as a function of packaging gas and electrode spacing. We discuss the tradeoffs involved in choosing gap geometries and dielectric properties that balance performance and reliability.     

Calculation of losses in ferro- and ferrimagnetic materials basedon the modified Steinmetz equation

This paper discusses the influence of nonsinusoidal flux waveforms on the remagnetization losses in ferro- and ferrimagnetic materials of inductors, transformers, and electrical machines used in power electronic applications. The nonsinusoidal changes of flux originate from driving these devices by nonsinusoidal voltages and currents at different switching frequencies. A detailed examination of a dynamic hysteresis model shows that the physical origin of losses in magnetic material is the average rate of remagnetization rather than the remagnetization frequency. This principle leads to a modification of the most common calculation rule for magnetic core losses, i.e., to the “modified Steinmetz equation” (MSE). In the MSE, the remagnetization frequency is replaced by an equivalent frequency which is calculated from the average remagnetization rate. This approach allows, for the first time, the calculation of the losses in the time domain for arbitrary waveforms of flux while using the available set of parameters of the classical Steinmetz equation. DC premagnetization of the material, having a substantial influence on the losses, can also be included. Extensive measurements verify the MSE presented in this paper     

The Modeling and Calculation of One Transistor Memory Devices

Metal/Ferroelectrics/Metal/Insulator/Si (MFMIS) and Metal/Ferroelectrics/ Insulator/Si (MFIS) one-transistor devices are being proposed for non-volatile memory applications. In order to determine the basic theory of one-transistor memory devices, we use equivalent circuits to model and calculate the basic properties of one-transistor memory devices. The capacitance of MFMIS and MFIS capacitors, memory windows, operation voltages, threshold voltages, and both switching and retention properties of one-transistor memory devices have also been calculated. According to the modeling and calculation, the ferroelectric materials with lower dielectric constant (?), low polarization (P_R), appropriate coercive field and square hysteresis loop are required for one-transistor memory devices and low voltage applications. High dielectric constant insulator materials may improve the performance of one-transistor memory devices. In addition, the effects of depolarization fields, leakage current, and defect density on the switching and retention properties of one-transistor memory devices are also calculated. Based on the modeling and calculation, the retention problem dealing with depolarization fields and leakage current is a big challenge for one-transistor memory devices.