共查询到20条相似文献,搜索用时 31 毫秒
1.
Jibesh K. Saha Nitish Chakma Mehedhi Hasan 《Journal of Computational Electronics》2018,17(4):1521-1527
Aggressive technology scaling as per Moore’s law has led to elevated power dissipation levels owing to an exponential increase in subthreshold leakage power. Short channel effects (SCEs) due to channel length reduction, gate insulator thickness change, application of high-k gate insulator, and temperature change in a double-gate metal–oxide–semiconductor field-effect transistor (DG MOSFET) and carbon nanotube field-effect transistor (CNTFET) were investigated in this work. Computational simulations were performed to investigate SCEs, viz. the threshold voltage (Vth) roll-off, subthreshold swing (SS), and Ion/Ioff ratio, in the DG MOSFET and CNTFET while reducing the channel length. The CNTFET showed better performance than the DG MOSFET, including near-zero SCEs due to its pure ballistic transport mechanism. We also examined the threshold voltage (Vth), subthreshold swing (SS), and Ion/Ioff ratio of the DG MOSFET and CNTFET with varying gate insulator thickness, gate insulator material, and temperature. Finally, we handpicked almost similar parameters for both the CNTFET and DG MOSFET and carried out performance analysis based on the simulation results. Comparative analysis of the results showed that the CNTFET provides 47.8 times more Ion/Ioff ratio than the DG MOSFET. Its better control over the threshold voltage, near-zero SCEs, high on-current, low leakage power consumption, and ability to operate at high temperature make the CNTFET a viable option for use in enhanced switching applications and low-voltage digital applications in nanoelectronics. 相似文献
2.
Shiromani Balmukund Rahi Pranav Asthana Shoubhik Gupta 《Journal of Computational Electronics》2017,16(1):30-38
Gate dielectric materials play a key role in device development and study for various applications. We illustrate herein the impact of hetero (high-k/low-k) gate dielectric materials on the ON-current (\(I_{\mathrm{ON}}\)) and OFF-current (\(I_{\mathrm{OFF}}\)) of the heterogate junctionless tunnel field-effect transistor (FET). The heterogate concept enables a wide range of gate materials for device study. This concept is derived from the well-known continuity of the displacement vector at the interface between low- and high-k gate dielectric materials. Application of high-k gate dielectric material improves the internal electric field in the device, resulting in lower tunneling width with high \(I_{\mathrm{ON}}\) and low \(I_{\mathrm{OFF}}\) current. The impact of work function variations and doping on device performance is also comprehensively investigated. 相似文献
3.
In this work, the potential benefit of tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications is developed and presented. A systematic, quantitative investigation of main figure of merit for the device is carried out to demonstrate its improved RF/analog performance. The results show an improvement in drain current, \(I_{\mathrm{on}} /I_{\mathrm{off}}\) ratio, transconductance, unity-gain frequency (\(f_{\mathrm{T}}\)), maximum oscillation frequency (\(f_{\mathrm{max}}\)) providing superior RF performance as compared to single and dual-metal gate stack nanowire MOSFET. The suitability of the device for analog/RF applications is also analyzed by implementing the device in a low-noise amplifier circuit, and the S-parameter values are estimated. 相似文献
4.
In this paper, a graded channel doping paradigm is proposed to improve the nanoscale double gate junctionless DGJL MOSFET electrical performance. A careful mechanism study based on numerical investigation and a performance comparison between the proposed and conventional design is carried out. The device figures-of-merit, governing the switching and leakage current behavior are investigated in order to reveal the transistor electrical performance for ultra-low power consumption. It is found that the channel doping engineering feature has a profound implication in enhancing the device electrical performance. Moreover, the impact of the high-k gate dielectric on the device leakage performance is also analyzed. The results show that the proposed design with gate stacking demonstrates superior \(I_{{\textit{ON}}}/I_{{\textit{OFF}}}\) ratio and lower leakage current as compared to the conventional counterpart. Our analysis highlights the good ability of the proposed design including a high-k gate dielectric for the reduction of the leakage current. These characteristics underline the distinctive electrical behavior of the proposed design and also suggest the possibility for bridging the gap between the high derived current capability and low leakage power. This makes the proposed GCD-DGJL MOSFET with gate stacking a potential alternative for high performance and ultra-low power consumption applications. 相似文献
5.
6.
Francisco G. Ruiz Andrés Godoy Luca Donetti I. M. Tienda-Luna Francisco Gámiz Carlos Sampedro 《Journal of Computational Electronics》2008,7(3):155-158
In this work, we study the differences caused in the Capacitance-Voltage (C-V) characteristics of MOS devices when SiO2 is replaced by HfO2 as the gate dielectric. A self-consistent Schrödinger-Poisson solver has been developed to include the effects of quantum confinement and the influence of different parameters such as the effective mass, barrier height, and dielectric constant (κ) of the gate insulator material. Two different devices are considered: A Double Gate MOSFET and a Surrounding Gate Transistor. The validity of the Equivalent Oxide Thickness (EOT) is studied. 相似文献
7.
This paper shows the potential benefits of using the trigate junctionless transistor (JLT) with dual-k sidewall spacers to enhance analog/radio-frequency (RF) performance at 20-nm gate length. Simulation study shows that the source-side-only dual-k spacer (dual-kS) JLT can improve all analog/RF figures of merit (FOMs) compared with the conventional JLT structure. The dual-kS JLT shows improvement in intrinsic voltage gain (\(A_{V0}\)) by \(\sim \)44.58 %, unity-gain cutoff frequency (\(f_\mathrm{T}\)) by \(\sim \)7.67 %, and maximum oscillation frequency (\(f_\mathrm{MAX}\)) by \(\sim \)6.4 % at drain current \((I_\mathrm{ds}) = 10\,\upmu \hbox {A}/\upmu \hbox {m}\) compared with the conventional JLT structure. To justify the improvement in all analog/RF FOMs, it is also found that the dual-kS structure shows high electron velocity near the source region because of the presence of an additional electric field peak near the source region, resulting in increased electron transport efficiency and hence improved transconductance (\(g_\mathrm{m}\)). Furthermore, the dual-kS JLT shows a reduction in the electric field value near the drain end, thereby improving short-channel effects. 相似文献
8.
S. S. Kapitonov N. N. Bespalov M. V. Il’in I. V. Gulyaev 《Russian Electrical Engineering》2017,88(6):351-354
Possible heating methods of power semiconductor devices during their testing in a high-conductivity state are discussed. It is shown that the diffusion capacitance of the p–n junction has a significant effect on measurements of device parameters. The effect of the diffusion capacitance on the results of testing of power semiconductor devices at various shapes of heating-current pulses was investigated. Conclusions on the possibility of using current pulses of various shapes for testing power semiconductor devices in the highconductivity state are drawn. 相似文献
9.
Objective
This study aimed to investigate the reliability of intravoxel incoherent motion (IVIM) model derived parameters D and f and their dependence on b value distributions with a rapid three b value acquisition protocol.Materials and methods
Diffusion models for brain, kidney, and liver were assessed for bias, error, and reproducibility for the estimated IVIM parameters using b values 0 and 1000, and a b value between 200 and 900, at signal-to-noise ratios (SNR) 40, 55, and 80. Relative errors were used to estimate optimal b value distributions for each tissue scenario. Sixteen volunteers underwent brain DW-MRI, for which bias and coefficient of variation were determined in the grey matter.Results
Bias had a large influence in the estimation of D and f for the low-perfused brain model, particularly at lower b values, with the same trends being confirmed by in vivo imaging. Significant differences were demonstrated in vivo for estimation of D (P = 0.029) and f (P < 0.001) with [300,1000] and [500,1000] distributions. The effect of bias was considerably lower for the high-perfused models. The optimal b value distributions were estimated to be brain500,1000, kidney300,1000, and liver200,1000.Conclusion
IVIM parameters can be estimated using a rapid DW-MRI protocol, where the optimal b value distribution depends on tissue characteristics and compromise between bias and variability.10.
Reza Hosseini 《Journal of Computational Electronics》2016,15(3):787-794
In this paper, we have analyzed the electrical characteristics of Strained Junctionless Double-Gate MOSFET (Strained JL DG MOSFET). A quantum mechanical transport approach based on non-equilibrium Green’s function (NEGF) method with the use of uncoupled mode space approach has been employed for this analysis. We have investigated the effects of high-\(\kappa \) materials as gate and spacer dielectrics on the device performance. Low OFF-state current, low DIBL, and low subthreshold slope have been obtained with increase in the gate and spacer dielectric constants. The electrical characteristics of strained JL DG MOSFET have also been compared with conventional JL DG MOSFET and Inversion Mode (IM) DG MOSFET. The results indicated that the Strained JL DG MOSFET outperforms the conventional JL and IM DG MOSFETs, yielding higher values of drain current. 相似文献
11.
In this paper, we have proposed a device and named it dual electrode doping-less TFET (DEDLTFET), in which electrodes on top and bottom of source and drain are considered to enhance the ON state current and Analog performances. The charge plasma technique is used to generate electron’s and hole’s clouding depending upon their respective work functions at top and bottom of source/drain electrode. Band-to-band-tunneling rate is similar on both sides of source-channel junctions, which increases ON state current. The analog performance parameters of DEDLTFET are investigated and using device simulation the demonstrated characteristics are compared with doping-less (DLTFET) and the conventional doped double gate TFET (DGTFET), such as transconductance \((\hbox {g}_\mathrm{m})\), transconductance to drain current ratio \((\hbox {g}_\mathrm{m}/\hbox {I}_\mathrm{D})\), output-conductance (g\(_{d})\), output resistance \((\hbox {r}_\mathrm{d})\), early voltage \((\hbox {V}_\mathrm{EA})\), intrinsic gain \((\hbox {A}_\mathrm{V})\), total gate capacitance \((\hbox {C}_\mathrm{gg})\) and unity gain frequency \((\hbox {f}_\mathrm{T})\). From the simulation results, it is observed that DEDLTFET has significantly improved analog performance as compared to DGTFET and DLTFET. 相似文献
12.
A high-performance vertical GaN metal–oxide–semiconductor field-effect transistor (MOSFET) with a U-shaped gate (UMOSFET) and high blocking voltage is proposed. The main concept behind this work is to reform the electric field distribution to achieve high blocking voltage. The proposed structure includes p-regions in the drift region, which we call reformed electric field (REF) regions. Simulations using the two-dimensional SILVACO simulator reveal the optimum doping concentration, and width and height of the REF regions to achieve the maximum depletion region at the breakdown voltage in the drift region. Also, the electric field distribution in the REF-UMOSFET is reformed by producing additional peaks, which decreases the common peaks under the gate trench. We discuss herein the impact of the height, width, and doping concentration of the REF regions on the ON-resistance (RON) and blocking voltage. The blocking voltage, specific ON-resistance, and figure of merit \( \left( {{\text{FOM}} = \frac{{V_{{{\text{BR}}}}^{2} }}{{R_{{{\text{ON}}}} }}} \right) \) are 1140 V, 0.587 mΩ cm2 (VGS = 15 V, VDS = 1 V), and 2.214 GW/cm2, respectively. The blocking voltage and FOM are increased by about 72 % and 171 % in comparison with a conventional UMOSFET (C-UMOSFET). 相似文献
13.
Peter T. While Jose R. Teruel Igor Vidić Tone F. Bathen Pål Erik Goa 《Magma (New York, N.Y.)》2018,31(3):425-438
Objective
To explore the relationship between relative enhanced diffusivity (RED) and intravoxel incoherent motion (IVIM), as well as the impact of noise and the choice of intermediate diffusion weighting (b value) on the RED parameter.Materials and methods
A mathematical derivation was performed to cast RED in terms of the IVIM parameters. Noise analysis and b value optimization was conducted by using Monte Carlo calculations to generate diffusion-weighted imaging data appropriate to breast and liver tissue at three different signal-to-noise ratios.Results
RED was shown to be approximately linearly proportional to the IVIM parameter f, inversely proportional to D and to follow an inverse exponential decay with respect to D*. The choice of intermediate b value was shown to be important in minimizing the impact of noise on RED and in maximizing its discriminatory power. RED was shown to be essentially a reparameterization of the IVIM estimates for f and D obtained with three b values.Conclusion
RED imaging in the breast and liver should be performed with intermediate b values of 100 and 50 s/mm2, respectively. Future clinical studies involving RED should also estimate the IVIM parameters f and D using three b values for comparison.14.
Guido H. Jajamovich Wei Huang Cecilia Besa Xin Li Aneela Afzal Hadrien A. Dyvorne Bachir Taouli 《Magma (New York, N.Y.)》2016,29(1):49-58
Objective
To quantify hepatocellular carcinoma (HCC) perfusion and flow with the fast exchange regime-allowed Shutter-Speed model (SSM) compared to the Tofts model (TM).Materials and methods
In this prospective study, 25 patients with HCC underwent DCE-MRI. ROIs were placed in liver parenchyma, portal vein, aorta and HCC lesions. Signal intensities were analyzed employing dual-input TM and SSM models. ART (arterial fraction), K trans (contrast agent transfer rate constant from plasma to extravascular extracellular space), v e (extravascular extracellular volume fraction), k ep (contrast agent intravasation rate constant), and τ i (mean intracellular water molecule lifetime) were compared between liver parenchyma and HCC, and ART, K trans, v e and k ep were compared between models using Wilcoxon tests and limits of agreement. Test–retest reproducibility was assessed in 10 patients.Results
ART and v e obtained with TM; ART, v e , k e and τ i obtained with SSM were significantly different between liver parenchyma and HCC (p < 0.04). Parameters showed variable reproducibility (CV range 14.7–66.5 % for both models). Liver K trans and v e ; HCC v e and k ep were significantly different when estimated with the two models (p < 0.03).Conclusion
Our results show differences when computed between the TM and the SSM. However, these differences are smaller than parameter reproducibilities and may be of limited clinical significance.15.
Bouhafs Khalfallah Fatima-Zohra Driss-Khodja Fatiha Saadaoui Mohammed Driss-Khodja Abdelkader Boudali Hanifi Bendaoud Bachir Bouhafs 《Journal of Computational Electronics》2018,17(4):1478-1491
The structural, elastic, electronic, vibrational, and optical properties of BaSe1?xTex alloys are investigated by means of the full-potential linearized augmented plane wave method. The exchange–correlation effects are treated with the local density approximation, as well as the GGA-PBE, GGA-PBEsol, and GGA?+?mBJ schemes of the generalized gradient approximation. Ternary BaSe1?xTex compounds have not yet been synthesized. Improved predictions of the structural parameters are obtained using the GGA-PBEsol approach. Calculations of the electronic and optical properties with the GGA?+?mBJ approach yield accurate results. Ternary BaSe1?xTex alloys are wide-band-gap semiconductors with a direct gap Γ–Γ. The upper valence band is mainly due to Se p and Te p states, while the bottom of the conduction band results essentially from Ba d states. The dielectric function, refractive index, reflectivity, absorption coefficient, and energy-loss function are calculated in the range 0–35 eV. The increase in x gives rise to a redshift of the optical spectra. BaSe1?xTex alloys exhibit reflective properties of metals in some energy ranges. The static dielectric constant ?1(0) and the static refractive index n0 are calculated. The investigation of the elastic and vibrational properties shows that ternary BaSe1?xTex should be mechanically and dynamically stable, elastically anisotropic, brittle, and relatively soft. 相似文献
16.
We propose herein a new dual-gate metal–oxide–semiconductor field-effect transistor (MOSFET) with just a unipolar junction (UJ-DG MOSFET) on the source side. The UJ-DG MOSFET structure is constructed from an \({N}^{+}\) region on the source side with the rest consisting of a \({P}^{-}\) region over the gate and drain, forming an auxiliary gate over the drain region with appropriate length and work function (named A-gate), converting the drain to an \({N}^{+}\) region. The new structure behaves as a MOSFET, exhibiting better efficiency than the conventional double-gate MOSFET (C-DG MOSFET) thanks to the modified electric field. The amended electric field offers advantages including improved electrical characteristics, reliability, leakage current, \({I}_{\mathrm{ON}}/I_{\mathrm{OFF}}\) ratio, gate-induced drain leakage, and electron temperature. Two-dimensional analytical models of the surface potential and electric field over the channel and drain are applied to investigate the drain current in the UJ-DG MOSFET. To confirm their accuracy, the MOSFET characteristics obtained using the 2D Atlas simulator for the UJ-DG and C-DG are analyzed and compared. 相似文献
17.
Silvin Paul Knight Jacinta Elizabeth Browne James Frances Mary Meaney Andrew John Fagan 《Magma (New York, N.Y.)》2017,30(5):461-471
Objectives
The aim of this study was to investigate the effect of the temporal resolution (T res) and acquisition duration (AD) on the measurement accuracy of contrast concentration–time curves (CTCs), and derived phenomenological and pharmacokinetic parameter values, in a dynamic contrast-enhanced MRI experiment using a novel phantom test device.Materials and methods
‘Ground truth’ CTCs were established using a highly precise optical imaging system. These precisely known CTCs were produced in an anthropomorphic environment, which mimicked the male pelvic region, and presented to the MRI scanner for measurement. The T res was varied in the range [2–24.4 s] and the AD in the range [30–600 s], and the effects on the measurement accuracy were quantified.Results
For wash-in parameter measurements, large underestimation errors (up to 40%) were found using T res values ≥16.3 s; however, the measured wash-out rate did not vary greatly across all T res values tested. Errors in derived K trans and v e values were below 14 and 12% for acquisitions with {T res ≤ 8.1 s, AD ≥ 360 s} and {T res ≤ 16.3 s, AD ≥ 360 s}, respectively, but increased dramatically outside these ranges.Conclusions
Errors in measured wash-in, wash-out, K trans, and v e parameters were minimised using T res ≤ 8.1 s and AD ≥ 360 s, with large errors recorded outside of this range.18.
First-principles calculations were made to explore the structural, electronic, and optical properties of copper oxide (CuO) with monoclinic (m-CuO) and cubic (c-CuO) structures. We calculated the equilibrium structural parameters: lattice parameters (a, b, and c), angle \(\beta \), and volume V. The obtained results were in good agreement with the experimental data reported in the literature. The cohesive energy showed that m-CuO is more stable than c-CuO. The band structure indicated that c-CuO is an indirect band gap semiconductor with a band gap of 0.87 eV along R–G, while m-CuO has a metallic behavior. Furthermore, electrovalent and covalent bonds were observed in both c-CuO and m-CuO. The linear optical properties were calculated and analyzed along different polarization directions of the incident light. The results indicated that m-CuO possesses optical anisotropic properties. In particular, c-CuO can be used as a potential UV detector material because of its high absorption coefficient (356351.3). 相似文献
19.
In this paper, we aim to explore the potential benefits of using source side only dual-k spacer (Dual-kS) trigate FinFET structure to improve the analog/RF figure of merit (FOM) for low power operation at 20 nm gate length. It has been observed from the results that Dual-kS (inner spacer high-k) FinFET structure improves the coupling of the gate fringe field to the underlap region towards the source side and results into improvement in transconductance \((g_{m})\) and output conductance \((g_{ds})\). It was also found that drain side only dual-k spacer (Dual-kD) improves the coupling of the gate fringe field to the underlap region towards the drain side which helps to shift away the drain field from gate edge and results into improvement in output conductance \((g_{ds})\) only at the cost of increase in Miller capacitance. A comparative simulation study has been performed on four different device structures namely both side low-k spacers (conventional), both side dual-k spacer (Dual-kB), Dual-kD and Dual-kS structures. From the simulation study, it was found that that Dual-kS structure has potential to improve \(g_{m}\) by \(\sim \)8.7 %, \(g_{ds}\) by \(\sim \)32.24 %, intrinsic gain \((A_{V0})\) by \(\sim \)11.44 %, early voltage \((V_{EA})\) by \(\sim \)47.59 %, maximum oscillation frequency (\(f_{MAX}\)) by \(\sim \)1.7 % and the ratio of gate-source capacitance and gate-drain capacitance \((C_{gs}/C_{gd})\) by \(\sim \)15.27 % with a slight reduction in the value of unity gain cut-off frequency (\(f_{T}\)) by \(\sim \)0.58 % in comparison to the conventional structure at drain current \((I_{ds})\) of \(10\,\upmu \)A/\(\upmu \)m. Furthermore, to reduce the drain field influence on the channel region, we also studied the effect of asymmetric drain extension length on Dual-kS FinFET structure. 相似文献
20.
M. N. Khan U. F. Ahmed M. M. Ahmed S. Rehman 《Journal of Computational Electronics》2018,17(2):653-662
A modified analytical model for the current–voltage (I–V) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented, considering the temperature-dependent: (a) Schottky barrier height, (b) energy bandgap discontinuity, (c) carrier mobility, and (d) saturation velocity. It is demonstrated that the Schottky barrier height and energy bandgap discontinuity decrease with increase of the temperature. The effective mobility of the two-dimensional electron gas (2-DEG) also decreases with increasing temperature, causing a reduction in the output current of the device. The model was tested over a wide range of temperatures (300–500 K) and bias, and it was observed that the developed model can successfully predict the I–V characteristic of the device with reasonable accuracy, especially at high temperatures (\(\sim 500\) K). It is shown that the developed model offers, on average, a 39 % improvement for the temperature variation, from 300–500 K, relative to the best model reported in literature. 相似文献