嵌入式数字存储示波器设计

提出了一种基于FPGA和STM32的嵌入式数字存储示波器设计,以STM32为控制核心,FPGA作为数据采集和处理模块,完成了对外部信号的采集和传输,实现了存储示波器数据处理和显示的功能.     

基于FPGA的简易数字存储示波器

介绍了一种基于flash构架的FPGA简易数字存储示波器设计,硬件上采用Fusion系列的FPGA作为核心器件。该FPGA简易数字存储示波器系统内部使用了很多AFS600芯片,利用其强大的信号处理功能,实现数据实时采集。在上位机中,使用的是Visual C++6.0中的MFC编程框架,本系统在此基础上建立了Windows下的应用程序,实现外部电压信号的波形显示。整机测试表明,系统各功能正常,整个系统集成度高,体积小,可靠性高,易于程控,使用灵活。     

基于单片机和FPGA的简易数字存储示波器设计

提出一种基于单片机和FPGA的简易数字存储示波器设计.通过高速A/D转换器AD9220实时采样输入信号,实现波形的实时采样、分析、存储和显示,同时给出了具体电路设计实现方法,通过运行数据采集程序及处理程序,表明该系统工作稳定可靠.     

基于FPGA的数字存储示波器设计

提出一个经过优化的数据采集方法,辅以FPGA(Field-Programmable Gate Array)主控制器和必备的外围电路完成了基于FPGA的数字存储示波器的设计.系统最大限度地利用了FPGA的高速数字信号处理能力以及众多硬核和软核内嵌的特性,降低了成本和开发难度.将数字存储示波器及信号源的基本原理和经过优化的数据采集方法相结合,分别在模拟信号预处理、数据多方位存储、触发方式、等精度测频等环节进行创新性优化,经测试,系统性能良好,各项指标均能较好满足要求,为新型简易数字存储示波器的发展提出了新思路.     

基于FPGA的手持式数字存储示波器显示驱动设计

为了降低系统成本和功耗,通过对液晶模块LTBHB203E1K和FPGA芯片EP1K30QC208-3的研究,利用模块化的设计方法,完成了手持式数字存储示波器显示部分的设计。给出了利用FPGA实现驱动液晶模块的方法以及数据存储与处理模块等的设计方法。实现了在液晶上显示输入信号波形、用户设置、输入信号参数等功能。该技术具有较高的实用性并已应用于产品之中。     

基矛FPGA的简易逻辑分析仪设计

基于数字信号采集及数字示波器存储显示原理,并以AT89S52单片机和现场可编程门阵列（FPGA）组成的最小系统为核心．采用数字信号发生器模块、由模拟开关和A／D采样组成的信号并行采集电路、触发模块、数据储存模块和显示电路等构成简易逻辑分析仪。该分析仪的功能全面,价格低,能实时分析8路数字信号,具有很高的实用价值。     

基于ARM和CPLD的虚拟数字存储示波器研究与设计

文章基于ARM与CPLD技术设计了一种虚拟数字存储示波器。以S3C2410和EPM7128为控制器,采用高速A／D转换芯片AD9283设计数据采集卡。采用USB总线实现数据采集卡和PC机通信,基于Lab-VIEW开发虚拟示波器的控制面板及应用程序。该虚拟示波器具有数据采集、波形显示、频谱分析、数据存储与回放等功能。     

基于FPGA的简易逻辑分析仪设计

基于数字信号采集及数字示波器存储显示原理,并以AT89S52单片机和现场可编程门阵列(FPGA)组成的最小系统为核心,采用数字信号发生器模块、由模拟开关和A/D采样组成的信号并行采集电路、触发模块、数据储存模块和显示电路等构成简易逻辑分析仪.该分析仪的功能全面,价格低,能实时分析8路数字信号,具有很高的实用价值.     

罗德与施瓦茨公司发布UMTSLTE上、下行信号测试解决方案

由北京航天测控技术开发公司自主研发的AMC2336示波器模块是一款双通道2GSa／s采样率、500MHz高带宽的VXI总线数字存储示波器模块，满足了VXI总线测试系统中对于高速信号测量与信号分析的高端需求，该模块在单插槽宽C尺寸上组合了宽带信号调理、多种触发手段、高速数据采集、大容量数据存储、数字信号处理、多种波形运算等多种功能。     

基于ARM和CPLD的虚拟数字存储示波器研究与设汁

文章基于ARM与CPLD技术设计了一种虚拟数字存储示波器.以S3C2410和EPM7128为控制器,采用高速A/D转换芯片AD9283设计数据采集卡.采用USB总线实现数据采集卡和PC机通信,基于Lab-VIEW开发虚拟示波器的控制面板及应用程序.该虚拟示波器具有数据采集,波形显示、频谱分析、数据存储与回放等功能.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.