Nd:Zn:LiNbO_3单晶的生长及其抗光伤性能与光谱的研究

选择掺Zn作为Nd:LiNbO_3晶体的抗光伤手段,成功地生长了高掺Nd(原料中掺入1mol％的Nd_2O_3)的Nd:Zn:LiNbO_3单晶,根据其各种光学性能的测试结果,断定它是可用于半导体激光器泵浦的自倍频激光材升。测试晶体的双折射梯度及不同光斑直径下的消光比证明,晶体具有良好的光学均匀性。测试晶体中OH~-离子伸展振荡的红外吸收峰的位置发现,在Nd:LiNbO_3晶体中,Zn含量的抗光伤阈值为2.58wt％(以ZnO计)。对Zn含量超过抗光伤阈值的晶体测定了Ar~+离子激光(514.5nm)长时间辐照前后双折射的变化,为10~(-5)量级,证明掺Zn具有显著的抗光伤效应。晶体在可见光及近红外的吸收峰即为Nd~(3+)离子的5个本征吸收峰,较单掺Nd的LiNbO_3晶体,吸收峰的位置皆稍红移,其中基态~4I_(9/2)至~4F_(5/2)的跃迁吸收峰位于808nm,使得有可能在将该材料用于激光运转时采用半导体激光器为泵浦光源。晶体室温下的荧光谱与单掺Nd的晶体相近,最强峰为~4F_(3/2)向~4I_(11/2)的跃迁,谱线波长1.085μm(π偏振)与1.093μm(σ偏振)。能实现自倍频的为σ偏振的激光振荡,自倍频后输出波长0.546μm。用于倍频1.06μm的Nd:YAG激光,该晶体的相匹配温度为70～80℃,相匹配角80°左右。在室温下,正入射时,即非严格相匹配的条件下,晶体有10％左右的倍频转换效率     

[Li]／[Nb]比变化对Ce：Mn：LiNbO3晶体光折变性能的影响：

采用提拉法生长4种不同[Li]／[Nb]比（0．94，1．05，1．20，1．38）的Ce（0．1％（质量分数））：Mn（0．05％（质量分数））：LiNb03晶体和掺镁量为5％（摩尔分数）的Mg：Ce（0．1％）：Mn（0．015％）：LiNbO3晶体。测试晶体红外光谱，[Li]／[Nb]为1．2和1．38的Ce：Mn：LiNb03晶体OH吸收峰移到3466cm^-1，这是化学计量比的标志吸收峰。Mg（5％（摩尔分数））Ce：Mn：LiNbO3晶体OH吸收峰移到3535cm^-1，这是Mg^2＋达到阈值浓度的标志吸收峰,以锂空位模型解释OH-吸收峰移动机理。采用光斑畸变法测试晶体抗光损伤能力，采用二波耦合光路测试晶体的指数增益系数、响应时间、计算载流子浓度。随着[Li]／[Nb]比增加，这些数据指标增加。[Li]／[Nb]为1．38，Ce：Mn：LiNbO3晶体是化学计量比，它的指数增益系数比Ce：Mn：LiNbO3晶体提高1倍，响应速度和抗光损伤能力提高1个数量级以上，是性能最为优良的光折变晶体材料之一。     

MnO2对Ba(Mg1/3Nb2/3)O3微观结构和微波介电性能的影响

研究了MnO2助烧剂对Ba(Mg1/3Nb2/3)O3陶瓷的微观结构和微波介电性能.MnO2可以有效地使Ba(Mg1/3Nb2/3)O3陶瓷的致密化温度由1550℃降低到1400℃左右.随MnO2掺量的增加,Ba(Mg1/3Nb2/3)O3陶瓷的12超晶格衍射峰的强度减弱,但是没有第二相出现.1400℃烧结4h陶瓷的晶粒尺寸在1.5μm左右.MnO2的掺入改善了Ba(Mg1/3Nb2/3)O3陶瓷的微波介电性能,MnO2掺量为1%mol的Ba(Mg1/3Nb2/3)O3陶瓷具有最好的微波介电性能εr≈31.5,Qf=68000,τf=3.11×10-5/℃,这可归功于陶瓷具有相当高的相对密度.     

高掺锌富锂铌酸锂晶体抗光损伤能力的研究

以Czochralski法生长Zn(6mol%): LiNbO3, Li/Nb=0.94, 0.97, 1, 1.02.测试晶体的光损伤阈值.采用质子交换法制作高掺锌富锂铌酸锂晶体光波导,研究了它们的抗光损伤能力.     

高掺锌富锂铌酸锂体抗光损伤能力的研究

以Czochralski法生长Zn(6mol%)：LiNbO3,Li/Nb=0.94,0.97,1,1.02。测试晶体的光损伤阈值。采用质子交换法制作高掺锌富锂铌酸锂晶体光波导,研究了它们的抗光损伤能力。     

富锂LiNbO_3∶Fe∶Mg晶体中的X射线折变

从双折率变化测量、吸收光谱和 ESR 谱三个方面研究了富锂 LiNbO_3∶Fe∶Mg、LiNbO_3∶Fe 和纯的LiNbO_3晶体中 X 射线致折射率变化。结果表明 X 射线致折射率变化现象不同于通常的光折变。伴随着 X射线折变的产生,出现了光色效应。X 射线折变后,晶体中 Fe~(2 )含量增加。X 射线折变可能是过量的 Fe~(2 )产生的。     

Mg:Er:LiNbO3晶体波导基片抗光损伤的研究

以Czochralski技术生长Mg(2mol%)Er(1mol%)LN,Mg(4mol%)Er(1mol%)LN,Mg(6mol%)Er(1mol%)LN,Mg(8mol%)Er(1mol%)LN和Er(1mol%)LN晶体.测试了MgErLiNbO3晶体的红外光谱,Mg(2mol%)ErLN,Mg(4mol%)ErLN OH-吸收峰在3486cm-1附近,Mg(6mol%)ErLN和Mg(8mol%)ErLN晶体OH-吸收峰移动到3535cm-1附近,对MgErLN晶体OH-吸收峰移动机理进行研究.采用m线法测试MgErLN晶体光损伤阈值.Mg(6mol%)Er(1mol%)LN和Mg(8mol%)ErLN晶体光损伤阈值比ErLN晶体提高两个数量级以上.Mg(2mol%)ErLN和Mg(4mol%)ErLN晶体比Er(1mol%)LN晶体提高一个数量级.     

Fe掺杂片状ZnO晶体的制备及光学性能研究

采用均匀沉淀法在常温开放体系下制备了片状ZnO晶体前驱物,经600℃煅烧得到纯ZnO晶体;在此基础上,采用原位掺杂的方法制备了片状掺Fe的ZnO晶体。通过体视显微镜、XRD、UV-Vis吸收和PL研究了Fe掺杂对片状ZnO晶体结构和光学性能的影响。结果显示掺Fe后ZnO晶体仍具有正六边形形貌和纤锌矿结构,其在398nm处的紫外发射峰和458nm处的蓝光发射峰位置保持不变,但晶片直径减小,禁带宽度增大,发光峰强度降低。     

Nd:NaBi(WO4)2晶体光谱性能研究

采用提拉法生长出了四方晶系白钨矿结构的掺钕钨酸铋钠[分子式Nd:NaBi(WO4)2,简称Nd:NBW]晶体.通过TG-DTA分析得到晶体的熔点为936.2℃,从XRD分析得到晶胞参数a=b=0.5275nm,c=1.1493nm.测试了该晶体的红外光谱和拉曼光谱,讨论了晶体的振动归属.由吸收光谱可以看出,该晶体在802nm有较强的吸收峰,半峰宽约16nm,并计算了晶体中Nd3 的吸收截面积.     

新型激光自倍频Yb:YAB晶体的性质研究

采用助熔剂法生长了不同配比的激光自倍频晶体Yb:YAl3(BO3)4(Yb:YAB).测量了晶体的室温吸收谱和荧光光谱,室温下仅存在一个吸收带,主吸收峰在976nm处,能与InGaAsLD有效耦合.在1.03μm处存在一个强荧光峰.测定了晶体的热膨胀系数,在平行与c轴方向的热膨胀系数较大,α2=9.4×10-6/K,约为a轴方向的3.5倍.在10％的Yb:YAB晶体中,以入射功率为11W,波长为977nm的光纤耦合二极管激光器泵浦得到4.3W的基频光波输出,斜效率为48％;在同样实验条件下得到了1.1w的自倍频绿光输出,总转换效率为10％.     

Phase Formation During Nonisothermal Decomposition of the Freeze-Dried Bi:Pb:Sr:Ba:Ca:Cu = 1.8:0.4:1.8:0.2:1.2:2.0 Complex Nitrate Powder

Nitrate powder with cation composition Bi:Pb:Sr:Ba:Ca:Cu = 1.8:0.4:1.8:0.2:1.2:2.0 was obtained by spray-frozen, freeze-drying technique. Samples of the nitrate precursor powder were placed in a heated furnace (heating rate 100°C/min) and extracted in air when temperature of the powdered samples attained values of 439, 495, 550, 600, 640, 647, 717, 766, 814, and 850°C. Samples have been investigated by X-ray diffraction analysis. The obtained data allow us to propose and discuss phase formation and decomposition processes and reactions that occur in non-isothermal conditions at different temperatures during thermal decomposition of the nitrate powder.     

Flash-lamp-pumped Ho:Tm:Cr:YAG and Ho:Tm:Er:YLF lasers: modeling of a single, long pulse length comparison

Two methods of producing the long pulse lengths that promote efficient extraction of energy from low-gain, quasi-four-level lasers are analyzed. A long pulse length output can mitigate laser-induced damage effects and can be generated in quasi-four-level lasers by two disparate methods. One method utilizes Q-switching techniques in resonators designed to extend the pulse length and another utilizes the first pulse in a relaxation oscillation pulse train. Models for quasi-four-level lasers are derived here taking into account the nonnegligible thermal population of the lower laser level. Closed-form expressions are derived for both modes of operation of quasi-four-level laser systems so the parametric dependencies of both forms of operation become obvious, allowing facile comparison. In addition, a combined absorption and quantum efficiency, germane for flash-lamp pumping, is calculated for both Cr and Er sensitizers. Although the former has the advantage of broad absorption bands, the latter has the advantage of a quantum efficiency approaching 3.     

Flash-lamp-pumped Ho:Tm:Cr:YAG and Ho:Tm:Er:YLF lasers: experimental results of a single, long pulse length comparison

Flash-lamp-pumped, room-temperature Ho:Tm:Cr:YAG and Ho:Tm:Er:YLF are compared for single but long pulse operation, with pulse lengths of approximately 1.0 mus. Under similar operating conditions in normal-mode operation, a slope efficiency of 0.0331 was observed for Ho:Tm:Er:YLF compared with 0.0047 for Ho:Tm:Cr:YAG. For Q-switched operation, Ho:Tm:Er:YLF yielded a slope efficiency of 0.0075. In comparison, a slope efficiency of 0.0012 was obtained for Ho:Tm:Cr:YAG. Two methods of producing long pulse lengths are compared: pulse selection of normal-mode relaxation oscillations and Q-switching in a long resonator. Theoretical models developed in a companion paper for normal-mode relaxation oscillations and Q-switching in quasi-four-level solid-state lasers are in agreement with the experimental results.     

Electroluminescence of (Zn:Cd)S:Mn:Sm:Cl phosphors

The effect of field strength and frequency on electroluminescence brightness has been investigated for the binary systems (Zn:Cd)S:Mn:Cl and (Zn:Cd)S:Mn:Sm:Cl. The voltage dependence of the time averaged electroluminescent brightness shows the relation B = B_o exp ($\text{?}\text{C}\text{√}\text{v}$ and holds good over a wide range of frequencies, thus indicating that the mechanism of excitation is acceleration collision. The dependence of constants B_o and C on frequency of the applied field shows that the brightness of the electroluminescence is found to saturate at higher frequencies. It has been observed that EL peak emissions for these phosphors were found to be at 560 nm and 580 nm.     

Growth of YLF:Yb:Tm:Nd for optical applications

The focus of this study is the behavior of Tm, Yb and Nd ions in the LiYF₄ (YLF) crystal. One YLF crystal was successfully grown by the Czochralski method; it was doped with 20 mol% Yb, 1.3 mol% Nd and 0.05 mol% Tm. The segregation coefficients of the dopants and lattice parameters were determined. The spectroscopic properties of samples with different amounts of Nd were obtained from absorption and emission studies.     

Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals

Optical and EPR characterization of Cr and Fe doped ZnSe crystals annealed in Zn vapor revealed a strong bleaching of the divalent state of transition metal ions. Photo induced EPR kinetics were studied in 20–80 K temperature range. Analysis of time-dependent data reveals Cr¹⁺ signal rise time decreases with increasing temperature. The non-exponential decay of Cr¹⁺ concentration were analyzed using Auger-type recombination process. The photoluminescence quantum yield of Cr²⁺ ions at ⁵E(D) → ⁵T₂(D) mid-IR transition excited via chromium ionization process was measured to be close to 100%.