Analysis of Infrared Reflection Spectra of (Mg1−xZnx)Al2O4 Microwave Dielectric Ceramics

Infrared reflection spectra of (Mg_{1− x} Zn _x )Al₂O₄ ceramics were analyzed by Kramers–Kroning analysis and classical oscillator model simulation. The dielectric properties were extrapolated down to the microwave range using the classical oscillator model for fitting the dielectric function. According to structure analysis, the losses originating from bend vibration and stretch vibration of the bond between A-site cation and oxygen anion dominated the whole dielectric losses of the spinel ceramics. The coexistence of Mg and Zn deteriorated the intrinsic dielectric properties due to the bond asymmetry thus introduced. The calculated Qf (∼10⁵ GHz) was much higher than the measured ones (∼10⁴ GHz), suggesting that the extrinsic loss was significant. Therefore, the microwave dielectric properties of MgAl₂O₄ and ZnAl₂O₄ could be improved much by microstructure modification, and the little superiority in their solution compared with the end-members was due to microstructure improvement.     

High Q Microwave Dielectric Ceramics in (Ni1−x Znx)Nb2O6 System

(Ni_{1− x} Zn _x )Nb₂O₆, 0≤ x ≤1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200°–1300°C (depending on the value of x ). The XRD patterns of the sintered samples (0≤ x ≤1.0) revealed single-phase formation with a columbite ( Pbcn ) structure. The unit cell volume slightly increased with increasing Zn content ( x ). All the compositions showed high electrical resistivity (ρ_dc=1.6±0.3 × 10¹¹Ω·cm). The microwave (4–5 GHz) dielectric properties of (Ni_{1− x} Zn _x )Nb₂O₆ ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 μm and the microwave dielectric constant (ɛ'_r) increased from 23.6 to 26.1, while the quality factors ( Q _u× f ) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (τ_f) increased from −62 to −73 ppm/°C. In the present work, we report the highest observed values of Q _u× f =103 730 GHz, and ɛ'_r=26.1 for the ZnNb₂O₆-sintered ceramics.     

High-Q Microwave Dielectric Materials Based on the Spinel Mg2TiO4

Composite ceramics based on the spinel Mg₂TiO₄ were prepared by a conventional mixed-oxide route. To achieve the temperature stabilization of the dielectric constant, each of the composites was added with 7 mol% CaTiO₃. The effect of the substitution of isovalent Co for Mg on the microstructure and the microwave dielectric properties of the composite ceramics was also investigated. A maximum Q × f value of around 150–160 THz was obtained for the undoped Mg₂TiO₄, whereas a reduced Q × f value was observed for an increase in the Co concentration in the system (1− x )Mg₂TiO₄− x Co₂TiO₄. Upon doping with 7 mol% CaTiO₃, the Q × f value passed through a maximum with increasing Co concentration. Adding ZnO–B₂O₃ to the composite system based on Co-doped Mg₂TiO₄ resulted in a reduction of the sintering temperature by 150°–200°C without any significant degradation in the Q × f value.     

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

The formation process and microwave dielectric properties of the Mg₂V₂O₇ ceramics were investigated. The MgV₂O₆ phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg₂V₂O₇ phase. Finally, this monoclinic Mg₂V₂O₇ phase was changed to a triclinic Mg₂V₂O₇ phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg₂V₂O₇ ceramics. In particular, the Mg₂V₂O₇ ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛ_r=10.5, Q × f =58 275 GHz, and τ_f=−26.9 ppm/°C.     

Tailoring the Microwave Dielectric Properties of MgNb2O6 and Mg4Nb2O9 Ceramics

The columbites MgNb₂O₆, MgTa₂O₆, and corundum-type Mg₄Nb₂O₉ ceramics were prepared by the conventional solid-state ceramic route. The structure and microstructure of the sintered samples were investigated by X-ray diffraction and scanning electron microscopic techniques. The microwave dielectric properties of the samples were measured by the resonance method in the frequency range 4–6 GHz. The dielectric properties have been tailored by forming a solid solution between MgNb₂O₆ and MgTa₂O₆ and by the substitution of TiO₂ for Nb₂O₅ in both MgNb₂O₆ and Mg₄Nb₂O₉ ceramics. The Mg(Nb_0.7Ta_1.3)O₆ has ɛ_r=29, Q _u× f =67 800 GHz, and τ_f=0.8 ppm/°C and the MgO–(0.4)Nb₂O₅–(1.5)TiO₂ composition has ɛ_r=34.5, Q _u× f =81 300 GHz, and τ_f=−2 ppm/°C.     

Structural and Dielectric Properties of Ag(Nb0.8Ta0.2)1−xSbxO3 (x≤0.08) Ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of Sb substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The perovskite Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics showed no obvious change with x value being no more than 0.08, and the pseudoperovskite unit cell parameters a = c , b and monoclinic angle β decrease with Sb concentration increasing. The dielectric properties of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics were found to be affected greatly by the substitution of Sb for Nb/Ta. The ɛ value of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics sintered at their densified temperature increased from 480 to 825 with x from 0 to 0.08, the tan δ value decreased sharply from 0.0065 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept a stable lower tan δ value ∼0.0024 with x to 0.08. The temperature coefficient of capacitance values continuously decreased from a positive value of 1450 ppm/°C for x =0 to a negative value of −38.52 ppm/°C for x =0.08.     

Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics

The effect of the addition of V₂O₅ on the structure, sintering and dielectric properties of M -phase (Li_{1+ x − y} Nb_{1− x −3 y} Ti _x +4 _y )O₃ ceramics has been investigated. Homogeneous substitution of V⁵⁺ for Nb⁵⁺ was obtained in LiNb_{0.6(1− x )}V_{0.6 x} Ti_0.5O₃ for x ≤ 0.02. The addition of V₂O₅ led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]_r= 66, Q × f = 3800 at 5.6 GHz, and τ_f= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V₂O₅-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.     

Effect of Li2CO3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Mg2V2O7 Ceramics

Li₂CO₃ was added to Mg₂V₂O₇ ceramics in order to reduce the sintering temperature to below 900°C. At temperatures below 900°C, a liquid phase was formed during sintering, which assisted the densification of the specimens. The addition of Li₂CO₃ changed the crystal structure of Mg₂V₂O₇ ceramics from triclinic to monoclinic. The 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic was well sintered at 800°C with a high density and good microwave dielectric properties of ɛ _r=8.2, Q × f =70 621 GHz, and τ_f=−35.2 ppm/°C. Silver did not react with the 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic at 800°C. Therefore, this ceramic is a good candidate material in low-temperature co-fired ceramic multilayer devices.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Subsolidus Phase Relationships in the Ga2O3–Al2O3–TiO2 System

Subsolidus phase relationships in the Ga₂O₃–Al₂O₃–TiO₂ system at 1400°C were studied using X-ray diffraction. Phases present in the pseudoternary system include TiO₂ (rutile), Ga_{2−2 x} Al_{2 x} O₃ ( x ≤0.78 β-gallia structure), Al_{2−2 y} Ga_{2 y} O₃ ( y ≤0.12 corundum structure), Ga_{2−2 x} Al_{2 x} TiO₅ (0≤ x ≤1 pseudobrookite structure), and several β-gallia rutile intergrowths that can be expressed as Ga_{4−4 x} Al_{4 x} Ti _{n −4}O_{2 n −2} ( x ≤0.3, 15≤ n ≤33). This study showed no evidence to confirm that aluminum substitution of gallium stabilizes the n =7 β-gallia–rutile intergrowth as has been mentioned in previous work.     

A Novel Temperature-Compensated Microwave Dielectric (1−x)(Mg0.95Ni0.05)TiO3−xCa0.6La0.8/3TiO3 Ceramics System

The microstructure and microwave dielectric properties of a (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics system have been investigated. The system was prepared using a conventional solid-state ceramic route. In order to produce a temperature-stable material, Ca_0.6La_0.8/3TiO₃ was added for a near-zero temperature coefficient (τ_f). With partial replacement of Mg²⁺ by Ni²⁺, the dielectric properties of the (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics can be promoted. The microwave dielectric properties are strongly correlated with the sintering temperature and the composition. An excellent Q × f value of 118,000 GHz can be obtained for the system with x =0.9 at 1325°C. For practical application, a dielectric constant (ɛ_r) of 24.61, a Q × f value of 102,000 GHz, and a temperature coefficient of resonant frequency (τ_f) of −3.6 ppm/°C for 0.85(Mg_0.95Ni_0.05)TiO₃−0.15Ca_0.6La_0.8/3TiO₃ at 1325°C are proposed. A parallel-coupled line band-pass filter is designed and simulated using the proposed dielectric to study its performance.     

Microstructure–Dielectric Properties Relationship in Ba0.6Sr0.4TiO3–Mg2SiO4–Al2O3 Composite Ceramics

0.60Ba_0.6Sr_0.4TiO₃(BST)–(0.40− x )Mg₂SiO₄(MS)– x Al₂O₃ ( x =0, 0.5, 3, 5wt%) composite ceramics exhibit excellent characteristics suitable for tunable device applications. With increasing amount of Al, the dielectric peak can be quantitatively broadened and suppressed; the "phase transition temperature" T _c or ( T _m) shifts to a lower temperature. Meanwhile, the tunability is still high in a wider temperature range. Far from T _c, pyroelectric effects are observed by using the Byer and Roundy technology and Slim polarization hysteresis loops are observed under high ac dielectric field at 10Hz. These proved the existence of spontaneous polarization in certain possible orientations in a broad temperature range above T _c in the paraelectric medium and reveal why 0.60BST–(0.40− x )MS– x Al₂O₃ have such remarkable dielectric nonlinearity.     

High-Q Microwave Dielectrics in the (Mg1−xCox)2TiO4 Ceramics

The microwave dielectric properties and the microstructures of (Mg_{1− x} Co _x )₂TiO₄ ceramics prepared by the conventional solid-state route were investigated. Lattice parameters were also measured for specimens with different x . The formation of solid solution (Mg_{1− x} Co _x )₂TiO₄ ( x =0.02–0.1) was confirmed by the X-ray diffraction patterns, energy dispersive X-ray analysis, and the lattice parameters measured. By increasing x from 0 to 0.05, the Q × f of the specimen can be tremendously boosted from 150 000 GHz to a maximum of 286 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.7, Q × f ∼286 000 GHz at 10.4 GHz, τ_f∼−52.5 ppm/°C) was achieved for (Mg_0.95Co_0.05)₂TiO₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured (Mg_0.95Co_0.05)TiO₃ was detected as a second phase. The presence of the second phase would cause no significant variation in the dielectric properties of the specimen because it possesses compatible properties compared with that of the main phase. In addition, only a small deviation in the dielectric properties was monitored for specimens with x =0.04–0.05 at 1360°–1420°C. It not only provides a wide process window but also ensures an extremely reliable material proposed as a very promising dielectric for low-loss microwave and millimeter wave applications.     

Synthesis of (Mg,Si)Al2O4 Spinel from Aluminum Dross

The spinel (Mg,Si)Al₂O₄ was synthesized from aluminum dross using an induction synthesis method. X-ray diffraction analyses on products formed at different temperatures provided an understanding of the formation mechanism of the spinel. After removal of soluble components, the induction heating of the dross resulted first in the oxidation of some of the AlN component and the subsequent formation of the spinel by the following reaction: x SiO₂+ (1− x )MgO + [1−( x /3)]Al₂O₃+ (2 x /3)AlN = (Mg_{1− x} ,Si _x )Al₂O₄+ ( x /3)N₂( g ).     

Oxidation Protection of MgO–C Refractories by Means of Al8B4C7

The effect of Al₈B₄C₇ used as an antioxidant in MgO–C refractories and the behavior of Al₈B₄C₇ in CO gas were investigated in the present study. Al₈B₄C₇ was found to react with CO gas, to form Al₂O₃( s ), B₂O₃( l ), and C( s ), at temperatures >1100°C. The Al₂O₃ reacts with MgO to form MgAl₂O₄ near the surface of the material. At the same time, B₂O₃( l ) evaporates and reacts with MgO, to form a liquid phase, at >1333°C, the eutectic point between 3MgO·B₂O₃ and MgO. The coexistence of the liquid and MgAl₂O₄ makes the protective layer more dense, thus inhibiting oxidation of the refractory. At >1333°C, the process apparently is controlled by oxygen diffusion, whereas it is controlled by chemical reaction when the temperature is <1333°C.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Improved Microwave Dielectric Properties of Ba6Ti1−xSnxNb4O18 Ceramics

Single-phase polycrystalline microwave dielectric ceramics Ba₆Ti_{1− x} Sn _x Nb₄O₁₈, with x changing from 0 to 1, were synthesized by the solid-state reaction method. All the solid solutions fitted well with A₆B₅O₁₈ cation-deficient hexagonal perovskite structure. The substitution of Sn for Ti effectively enhanced the quality factor and controlled τ_f. With increasing Sn content, the dielectric constant decreased from ∼47 to ∼32, and the Q × f value increased significantly from 11 530 to 28 496 GHz, with τ_f varying from 64 to 0 ppm/°C. A zero τ_f was realized when Sn was fully replaced by Ti with the composition Ba₆SnNb₄O₁₈.     

Coherent Precipitation in the System MgO-Al2O3-Cr2O3

An isothermal section of the ternary system MgO–Al₂O₃-Cr₂O₃ was determined at 1700°± 15°C to delineate the stability field for spinel crystalline solutions (cs). Crystalline solutions were found between the pseudobinary joins MgAl₂O₄–Cr₂O₃ and MgCr₂O₄-Al₂O₃, and the binary join MgAl₂O₄-MgO. The first two crystalline solutions exhibit cation vacancy models while the latter can probably be designated as a cation interstitial model. Precipitation from spinel cs may proceed directly to an equilibrium phase, (Al_1-xCr_x)₂O₃, with the corundum structure or through a metastable phase of the probable composition Mg(Al_1-xC_r)₂₆O₄₀. The composition and temperature limits were defined where the precipitation occurs via metastable monoclinic phases. The coherency of the metastable monoclinic phase with the spinel cs matrix can be understood by considering volume changes with equivalent numbers of oxygens and known crystallographic orientation relations. Electron probe and metallographic microscope investigations showed no preferential grain boundary precipitation.     

Decomposition of Al2TiO5 and Al2(1-x)MgxTi(1+x)O5 Ceramics

The decomposition of Al_{2(1- x )}Mg _x Ti_{(1+ x )}O₅ ceramics in air has been studied between 900° and 1175°C for 0 lessthan equal to x lessthan equal to 0.6. The decomposition temperature versus composition x predicted using a thermodynamic model based on the regular solution approach is in satisfactory agreement with the experimental results. The decomposition kinetics has been studied at 1100°C for x = 0, 0.1, and 0.2 and follows a nucleation and growth mechanism. Random nucleation of the reaction products is hindered by the high elastic stresses that result from the molar volume change related to decomposition because of the small chemical driving force available. Decomposition occurs only at a limited number of sites, probably associated with the presence of impurities and/or glassy phase. The decomposition products grow as nodules formed by an Al₂O₃ (+ MgAl₂O₄ for x > 0) core and a TiO₂ shell. The growth is parabolic for x = 0 and linear for x = 0.1 and 0.2. The rate-controlling step in the decomposition mechanism of pure Al₂TiO₅ ( x = 0) is the transport of Al³⁺ ions through the TiO₂-rutile phase.     

Reduced Dielectric Loss of Modified ZnNb2O6 Ceramics by Substituting Nb5+ with Ta5+

The effects of substituting Nb⁵⁺ with Ta⁵⁺ on the microwave dielectric properties of the ZnNb₂O₆ ceramics were investigated in this study. The forming of Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. By increasing x , not only could the Q × f of the Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution be tremendously boosted from 83 600 GHz at x =0 to a maximum 152 000 GHz at x =0.05, the highest ɛ_r∼24.6 could also be achieved simultaneously. It was mainly due to the uniform grain morphology and the highest relative density of the specimen. A fine combination of microwave dielectric properties (ɛ_r∼24.6, Q × f ∼152 000 GHz at 8.83 GHz, τ_f∼–71.1 ppm/°C) was achieved for Zn(Nb_0.95Ta_0.05)₂O₆ solid solution sintered at 1175°C for 2 h.