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ZnO/Ag/ZnO多层膜的制备和性质研究 总被引:2,自引:0,他引:2
采用射频磁控溅射ZnO陶瓷靶和直流磁控溅射Ag靶的方法制备了ZnO/Ag/ZnO多层膜。用X射线衍射仪、紫外–可见分光光度计、四探针测试仪和金相显微镜对ZnO/Ag/ZnO薄膜的结构、光学透过率、方阻和稳定性进行了研究。结果表明,ZnO(60nm)/Ag/(10nm)/ZnO(60nm)薄膜呈现多晶结构,薄膜在520nm处的光学透过率高达87.5%,方阻Rs为6.2Ω/□。随着顶层ZnO薄膜厚度的增加,ZnO/Ag/ZnO薄膜的稳定性提高。 相似文献
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采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法制备了不同厚度Ag夹层的ZnO(60nm)/Ag/ZnO(60nm)多层膜.分别用X射线衍射仪、紫外可见分光光度计、四探针测试仪对样品的结构、光学性质、电学性质进行了研究.结果表明:随着Ag层厚度的增加,ZnO/Ag/ZnO多层膜呈现多晶结构,Ag(111)衍射峰的强度增强.Ag夹层厚度为11nm时,ZnO(60nm)/Ag/ZnO(60nm)膜在554nm处的透过率高达92.3%.随着Ag层厚度的增加,Ag膜的特征吸收峰呈现红移和宽化,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定. 相似文献
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采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法在室温下制备了不同厚度的ZnO/Ag/ZnO多层膜。对样品进行了研究。结果表明:随着Ag层厚度的增加,ZnO(002)衍射峰的强度先增加后减小,Ag(111)衍射峰的强度增强,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定。ZnO膜厚度增加,Ag膜易形成晶状结构,ZnO/Ag/ZnO多层膜的透射峰向长波方向移动。ZnO(60nm)/Ag(11nm)/ZnO(60nm)膜在554nm处的透过率高达92.3%,面电阻为4.2?/□,品质常数?TC最佳,约40×10–3/?。 相似文献
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利用射频磁控溅射方法在玻璃和聚酰亚胺膜(PI)衬底上沉积了氧化铝质量分数为2%的掺铝氧化锌透明导电薄膜(ZnO∶Al)。系统地研究了不同衬底材料对薄膜的结构、电学以及光学性能的影响。分析表明,衬底材料对薄膜的结晶性和电学性能有较大的影响,对可见光透射率却影响不大。X射线衍射(XRD)分析得出所有的ZnO∶Al具有良好的c轴择优取向性,在可见光区(400~800nm)两种衬底上的薄膜都达到了85%的透射率。玻璃衬底上的薄膜呈现出更强的(002)衍射峰及相对更小的半峰全宽(FWHM),薄膜电阻率达到了2.352×10-4Ω.cm。电镜分析表明,相对于PI上的ZnO∶Al膜,玻璃上ZnO∶Al膜表面有更致密的微观结构及更大的晶粒尺寸。PI衬底上的ZnO∶Al膜也有相对较好的电、光学性能,其中电阻率达到了6.336×10-4Ω.cm,而且由于PI衬底柔性可弯曲,使得它适于在柔性太阳电池和柔性液晶显示中做窗口层材料及透明导电电极。玻璃上的ZnO∶Al膜则可应用在平板显示和太阳电池技术中。 相似文献
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溅射ZnO薄膜钝化GaAs表面性能的研究 总被引:2,自引:2,他引:0
为了改善GaAs(110)与自身 氧化物界面由于高表面态密度而引起的费米能级钉扎(pinning)问题 ,提出采用射频磁控溅射技 术在GaAs(110)衬底上沉积一定厚度 ZnO薄膜作为钝化层,并利用光 致发光(PL)光谱和X射线光电子能谱(XPS) 等方法对ZnO薄膜的光学特性及钝化性能进行表征。实验结果表明,经ZnO薄膜钝化后的 GaAs样品,其本征PL峰强度提高112.5%,杂质峰强度下降82.4%。XPS光谱分析表明,Ga和As原子的比值从1.47降低 到0.94,ZnO钝化层能 够抑制Ga和As的氧化物形成。因此,在GaAs表面沉积ZnO薄膜是一种可行的GaAs表面钝化 方法。 相似文献
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Al薄膜对(002)ZnO/Al/Si结构基片中ZnO薄膜特性影响的实验研究 总被引:3,自引:3,他引:0
采用射频磁控溅射法沉积制备了(002)ZnO/A l/Si复合结构。研究了Al薄膜对(002) ZnO/Al/Si复合结构的声表面波器件(SAWD)基片性能影响以及当ZnO 薄膜厚度一定时的Al膜最佳厚度。采用X射线衍射(XRD)对Al和ZnO薄膜进行了结构表征 ,采用 扫描电镜(SEM)对ZnO薄膜进行表面形貌表征,并从薄膜生长机理角度进行了分析。结果 表明,加Al薄膜有利于ZnO薄膜按(002)择优取向生长,并且ZnO 薄膜的结晶性能提高;与(002)ZnO/Si结构基片相比,当Al薄膜 厚为100nm时,(002)ZnO/Al/Si结构中ZnO薄 膜的机电耦合系数提高 了65%。 相似文献
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为了提高氧化锌光致发光强度,以磁控溅射氧化锌/银复合薄膜为研究对象,系统地研究了氧化锌薄膜的光学性质。实验中首先在硅衬底上用射频磁控溅射的方法沉积氧化锌/银复合薄膜,作为对比,同时沉积了一层氧化锌薄膜。通过扫描电子显微镜和原子力显微镜对样品的形貌及成份进行表征,并且在室温下测试样品在300~800 nm波长范围内的光致发光光谱。实验结果表明:所制得样品为均匀分布的氧化锌纳米薄膜,纯氧化锌光致发光光谱结果显示有波长位于378 nm左右的紫光、470 nm左右的蓝色发光峰存在,加入银薄膜后,氧化锌可见光区和紫外光区的光致发光光谱强度均有所增强,而且紫外光峰位出现了红移。实验结果结合样品吸收谱对光致发光机理的分析作了进一步的分析。 相似文献
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In this paper, surface morphology and optical properties are investigated to find the optimum microstructure of zinc oxide (ZnO) thin films deposited by radio frequency (RF) magnetron sputtering. To achieve a high transmittance and a low resistivity, we examined various film deposition conditions. The transmittance and surface morphology of ZnO thin films were measured by an ultraviolet (UV)-visible spectrometer and atomic force microscopy (AFM), respectively. In order to improve the surface quality of ZnO thin films, we performed chemical mechanical polishing (CMP) by change of process parameters, and compared the optical properties of polished ZnO thin films. As an experimental result, we were able to obtain good uniformity and improved transmittance efficiency by the CMP technique. 相似文献
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Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%. 相似文献
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We investigated the effects of thickness on the electrical, optical, structural and morphological properties of B and Ga co-doped ZnO (BGZO) films grown by radio frequency (RF) magnetron sputtering. All the prepared BGZO films showed preferentially c-axis orientation and structure of hexagonal wurtzite. The results also indicated that with an increase in film thickness, the crystallite sizes of the films were increased and the optical band gap (Eg) was decreased. Below a critical thickness of about 210 nm, the thickness of the BGZO films significantly affected the electrical properties of the films. The average transmittance for all the grown films did not change obviously with the thickness. 相似文献
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脉冲激光沉积法制备氧化锌薄膜 总被引:7,自引:0,他引:7
ZnO是一种新型的Ⅱ-Ⅵ族半导体材料,具有优良的晶格、光学和电学性能,其显著的特点是在紫外波段存在受激发射。利用脉冲激光沉积法(PLD)在氧气氛中烧蚀锌靶制备了纳米晶氧化锌薄膜,衬底为石英玻璃,晶粒尺寸约为28-35 nm。X射线衍射(XRD)结果和光致发光(PL)光谱的测量表明,当衬底温度在100-250℃范围内时,所获得的ZnO薄膜具有c轴的择优取向,所有样品的强紫外发射中心均在378-385 nm范围内,深能级发射中心约518-558 nm,衬底温度为200℃时,得到了单一的紫外光发射(没有深能级发光)。这归因于其较高的结晶质量。 相似文献
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氧化锌薄膜的电化学沉积法制备及受激发射研究 总被引:4,自引:3,他引:4
采用一种简单的电化学沉积法,在三电极化学池中,以单一的硝酸锌水溶液作为电沉积液,制备了高光学质量的半导体ZnO薄膜。透射光谱测量表明其光学带隙为3.35eV,400~2000nm波段的光学透过率大于80%。X射线衍射(XRD)和原子力显微镜(AFM)研究表明,ZnO薄膜为纤锌矿结构的无序多晶颗粒膜,微晶尺寸小于250nm。当用355nm的皮秒脉冲激光作为抽运源垂直入射薄膜表面时,可以检测到400nm附近的近紫外受激发射光,其强度随入射强度呈超线性增长关系,阈值在196.8kW/cm^2处,并且激光发射是多模的和各个方向的,还与被激发的面积有关,表现为随机激光发射机制。 相似文献
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室温下,采用直流磁控溅射法,在玻璃衬底上制备出Nb掺杂ZnO(NZO,ZnO:Nb)透明导电薄膜。研究了靶与衬底之间的距离对NZO薄膜结构、形貌、光学及电学性能的影响。实验结果表明,不同靶基距下制备的NZO薄膜均为c轴择优取向生长,(002)衍射峰的强度随着靶基距的减小而增大。靶基距增大时,薄膜表面逐步趋向平整光滑、均匀致密,薄膜的厚度逐渐减小。在靶基距为60mm时,制备的薄膜厚为355.4nm,电阻率具有最小值(6.04×10-4Ω.cm),在可见光区的平均透过率达到92.5%,其光学带隙为3.39eV。 相似文献
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Yang Xiaoli Chen Nuofu Yin Zhigang Zhang Xingwang Li Yang You Jingbi Wang Yu Dong Jingjing Cui Min Gao Yun Huang Tianmao Chen Xiaofeng Wang Yanshuo 《半导体学报》2010,31(9)
Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 ℃. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 ℃ with best crystallization. 相似文献
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ZnO nanocrystal thin films were fabricated on sapphire substrates by laser molecular beam epitaxy. The structure and optical properties of the films were investigated experimentally. The film having small nanocrystal size of about 50-200 nm shows optically pumped ultraviolet laser emission at room temperature. This paper discussed the theoretical mechanism of excitonic radiative recombination in relation with the nanocrystal structure on ZnO film ultraviolet laser research. It is concluded that the experimental results are consistent with the theoretical analysis. 相似文献