Analysis of erbium-doped fiber amplifiers pumped in the4I15/2-4I13/2 band

A theoretical model for the amplifiers predicts gain coefficients of around 2 dB per milliwatt of launched pump power, in close agreement with previously reported measurements. The model is also used to determine the optimal pump wavelength λ_opt that maximizes the amplifier gain. It is shown that the latter is insensitive to pump detuning near λ_opt=1.48 μm, within a 20 nm range, which indicates that broadband, multimode laser diode pump sources and pumps with narrow linewidths should yield identical gain performance     

Thermal shifts of the spectral lines in the 4F3/2 to 4I11/2 manifold of anNd:YAG Laser

A report is presented of the thermal shifts of eleven of the twelve lines from the ⁴F_3/2 Stark energy levels to the ⁴I_11/2 energy levels in an Nd:YAG laser for a temperature change from 20-200°C. The thermal shift difference between the Stark sublevels R₁, R₂ in ⁴F_3/2 is found to be about -0.6±0.6 cm^-1/100°C. Within experimental uncertainty, all of the lasing lines either moved to longer wavelength or remained unchanged with increasing temperature     

Optimal pump wavelength in the4I15/2-4I13/2 absorption band for efficient Er3+-doped fiberamplifiers

The authors report the measured gain of a highly efficient erbium-doped fiber amplifier pumped at wavelengths between 1.46 and 1.51 μm. The optimal pump wavelength, λ_opt, was determined to be 1.475 μm. At this wavelength, the maximum gain coefficients for signals at 1.531 and 1.544 μm were 2.3 and 2.6 dB/mW, respectively. At λ_opt, high gains ranging from 32 dB at pump power P_p=20 mW up to 40 dB at P _p=80 mW were obtained. These modest pump powers are within the capabilities of currently available 1.48-μm diode lasers. The width about λ_opt for 3-dB gain variation exceeded 27 nm for P_p=10 mW and 40 nm for P_p >20 mW. With this weak dependence on pump wavelength, single-longitudinal-mode lasers do not have a significant advantage over practical Fabry-Perot multimode pump lasers     

Measurement of the stimulated emission cross section for the 4F3/2-4I13/2transition of Nd3+ in YAlO3 crystal

A method for the simultaneous measurement of the stimulated emission cross section and fluorescence lifetime by studying the relation between laser parameters and the laser relaxation oscillation frequency is discussed. The stimulated emission cross section for the ⁴F_3/2-⁴I_13/2 transition of Nd³⁺ ion in YAP crystal was measured to be (22±1)×10^-20 cm²     

Binary images of cyclic codes over Z4

We determine all linear cyclic codes over Z₄ of odd length whose Gray images are linear codes (or, equivalently, whose Nechaev-Gray (1989) image are linear cyclic codes or are linear cyclic codes)     

Determination of homogeneous linewidth by spectral gainhole-burning in an erbium-doped fiber amplifier with GeO2:SiO2 core

Spectral gain hole-burning was observed at low temperatures in an erbium-doped fiber amplifier with GeO₂:SiO₂ core. At the peak wavelength λ=1.535 μm, homogeneous linewidths determined from the observed hole widths have a power-law dependence on temperature. At room temperature, the extrapolated homogeneous linewidth is 4 nm and the inhomogeneous linewidth is 8 nm     

Quasi-cyclic codes over Z4 and some new binarycodes

Previously, (linear) codes over Z₄ and quasi-cyclic (QC) codes (over fields) have been shown to yield useful results in coding theory. Combining these two ideas we study Z ₄-QC codes and obtain new binary codes using the usual Gray map. Among the new codes, the lift of the famous Golay code to Z₄ produces a new binary code, a (92, 2²⁴, 28)-code, which is the best among all binary codes (linear or nonlinear). Moreover, we characterize cyclic codes corresponding to free modules in terms of their generator polynomials     

Quarter-micrometer gate ion-implanted GaAs MESFET's with an f1 of 126 GHz

The fabrication and characterization of a 0.25-μm-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f_t of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I _dss yields f₁'s of 108-126 GHz. It is projected that an f₁ of 320 GHz is achievable with 0.1-μm-gate GaAs MESFETs. This demonstration of f₁'s over 100 GHz with practical 0.25-μm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs     

On algebraic decoding of the Z4-linearCalderbank-McGuire code

The quaternary Calderbank-McGuire (see Des., Codes Cryptogr., vol.10, no.2, 1997) code is a Z₄-linear code of length 32 which has 2³⁷ codewords and a minimum Lee distance of 12. The Gray map of this code is known to be a nonlinear binary (64, 2³⁷,12) code. The Z₄-linear Calderbank-McGuire code can correct all errors with Lee weight ⩽5. An algebraic decoding algorithm for the code is presented in this paper. Furthermore, we discuss an alternative decoding method which takes advantage of the efficient BCH decoding algorithm     

Measurement of the characteristics of the optical-microwavedouble-resonance effect of the 87Rb D1line for application as an atomic frequency standard

The OMDR (optical-microwave double resonance) spectrum of ⁸⁷ Rb with the aim of using a frequency-stabilized GaAs semiconductor laser instead of an Rb lamp as a pumping source in a gas-cell-type Rb frequency standard. Natural isotope ⁸⁷Rb was sealed in a glass cell with buffer gases (Ar/N₂=1.2, total pressure=39 torr). The double resonance signal in the 5P_1/2(F=2)←5S_1/2( F=1) transition appearing at the resonance to the F=2←1 hyperfine transition of the 5S_1/2 state was detected. The optimum operational cell temperature was 56°C. The peak-to-peak frequency width of the atomic hyperfine resonance discriminator used to stabilize the microwave frequency shifts induced by detuning of the laser frequency, changes in the laser and microwave powers, and temperature drift of the cell were investigated     

Image restoration by convex projections using adaptive constraintsand the L1 norm

A new projection method based on the row action projection (RAP) algorithm for image restoration is presented. The new implementation is computationally attractive and facilitates local adaption of projection operators. The local mean and the least L₁ norm set of solutions are used as constraints. Computer simulations illustrate the new methods to be very competitive in restoring missing spectral components of a degraded image     

NdP_5O_(14)晶体中Nd~(3+)的4F_(3/2)受激态上粒子数对荧光寿命的影响

研究了室温下 NdP_5O_(14)晶体中 Nd~(3+)的4F_(3/2)态的荧光寿命。观察到高泵浦强度下影响光学增益的荧光双指数衰减曲线。从能量传递过程进行理论分析。简单描述了脉冲若丹明6G 激光器选择泵浦的τ计。     

A model for the temperature-dependent saturated ID-VD characteristics of an a-Si:H thin-filmtransistor

A simplified analytical expression for the temperature dependent saturated I_D-V_D characteristics of hydrogenated amorphous silicon (a-Si:H) thin-film transistors, between -50°C and 90°C, is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled by a single equation. The model is based on three functions obtained from the experimental data of I_D versus V_G, over a range of temperature. Theoretical results confirm the simple form of the model in terms of the device geometry. As the temperature increased, the saturated drain current increased and, at a fixed gate voltage the device saturated at increasingly larger drain voltages while the threshold voltage decreased. Good agreement between the measured data and the model was obtained up to 363 K. Also observed at temperatures larger than 363 K was a decrease in I_D and more severe gate voltage hysteresis characteristics     

A single-hop F2 propagation model forfrequencies above 30 MHz and path distances greater than 4000 km

Standard textbook explanations of ionosphere propagation suggest that 30 MHz and 4000 km are the limiting frequency and distance for single-hop communications. During the peak of sunspot cycle 22, however, there have been hundreds of reports of F₂ communications exceeding great-circle distance of 4200 km at 50 MHz. It is shown that parabolic F₂ ionospheric models explain this propagation irregularity, although textbooks and reference books fail to show that such long distances at VHF are possible     

Frequency stabilization of laser diodes using 1.51-1.55 μmabsorption lines of 12C2H2 and 13C2

Frequency stabilization of a 1.55 μm DFB laser diode is demonstrated using vibrational-rotational absorption of ¹²C ₂H₂ and ¹³C₂H₂ molecules (named VRAM). Frequency stability within 2 MHz peak to peak fluctuation can be achieved in the wavelength region of 1.51-1.55 μm. Frequency-stabilized DFB laser compact modules have been constructed. Frequency stabilities are evaluated by measuring the beat spectrum of the two lasers. In addition, the temperature and pressure dependences of the acetylene absorption lines are characterized     

Concentration-dependent 4I13/2 lifetimes inEr3+-doped fibers and Er3+-doped planar waveguides

We report on the concentration- and pump-dependent lifetimes of the spontaneous emission in Er³⁺-doped fibers and Er³⁺ -doped waveguides. In addition, we measure the concentration dependence of the 550-nm fluorescence due to excited state absorption (ESA)     

^39K2分子C^1Ⅱu→X^1Σg^＋跃迁的碰掸诱导光谱

用441.56nm CW He-Cd+激光获得了39K2分子C1Ⅱu→X1∑g+跃迁的碰撞诱导(CI)光谱。光谱分析表明:来自C1Ⅱu(u′=0,J′=53)的碰撞诱导跃迁是P(△J=±2)、R(△J=±2)、Q(△J=±1)。碰撞诱导谱的波数计算值和实验值之间有令人满意的符合。研究了碰撞诱导(CI)伴线和激光诱导荧光(LIF)光谱主线的强度比ρ与缓冲气体压强、样品池温度的关系,给出了物理解释。     

水对掺钕磷酸盐玻璃~4F_(3/2)态无辐射弛豫的影响

通过实验表明磷酸盐玻璃在制备过程中引进的水,与无辐射跃迁速率的增加有直接的关系。在300～600K之间,测定了无辐射弛豫速率对温度的关系,并分析了由水所引进的无辐射弛豫过程的性质。     

Li_2分子A~1Σ_u~+→X~1Σ_g~+LIF和b~3Ⅱ_u→X~1Σ_g~+CIF发射光谱研究

用632.8nm CW激光获得了Li_2分子A~1∑_u~+(v′=15,J′=2)→X~1∑_g~+(v″=1～13,J″=1,3)R、P支双线LIF光谱。同时用光谱分析及碰撞动力学研究识别出另一支单线序列光谱来自b~3Ⅱ_u(v_b=21,N_b=1)→X~1∑_g~+(v″=3～6,J″=1)CIF发射。     

Direct measurements of 4I11/2 terminal-levellifetime in Nd:YLF

Direct measurements of the ⁴I_11/2 terminal-laser-level lifetime of Nd:YLF after saturating a pumped sample with an impulse-like pulse are reported. Measurements of small-signal gain recovery at the 1047- and 1053-nm laser wavelengths in four different samples, as well as transient excited-state absorption from the terminal laser level, provide consistent values for this lifetime that average 21.6 ns with subnanosecond accuracy