采用移频法进行离轴全息图压缩的研究

由于数字全息图的数据量庞大,其传输、存储占用大量的通信带宽和存储空间.为实现数字全息图有效的传输、存储,需要对其进行信息压缩.根据离轴全息图的频谱特点,提出了一种将数字全息图的有效信息从高频段搬移到低频段的方法,从而降低全息图采样频率达到信息压缩的目的.实验结果表明,该方法是有效的,压缩后全息图的再现像与原来的没有明显区别.     

基于全变差重构算法的数字全息研究

为了消除传统算法对数字全息重构过程中会出现0级像、共轭像干扰的问题,将压缩感知理论与数字全息图再现相结合,提出了基于全变差的两步迭代收缩阈值重构算法（TwIST）,并应用于数字全息图压缩感知全息图重建。 TwIST算法根据重构成分的特点增加正则约束,对相应的形态进行调整,在满足全变差最小的特性的基础上进行重构,提高了重构全息图的质量。结果表明,TwIST算法可以对数字全息图稀疏重建,利用35%的部分全息图数据进行图像重构,重构图像峰值信噪比为36.46dB,且没有0级像和共轭像等干扰。该研究结果对实现计算全息的实时性具有重要的意义。     

基于迭代傅里叶变换的3维全息图计算新方法

为了进行3维物体全息图的快速运算,在迭代傅里叶变换算法基础上,通过分析透镜的傅里叶变换性质,采用编码球面相位因子的方法,将全息图平行光再现等效为点光源再现。将球面相位因子加入到迭代运算中,获得了具有深度特征的3维物体全息图;同时利用球面相位因子查表运算法简化了相位因子的计算,提高了算法的迭代速度,并基于空间光调制器进行了3维物体的再现实验。结果表明,该算法具有良好的收敛特性,计算的全息图能够在不同距离的像面实现对应层面的物场再现,具有3维的视觉效果。     

压缩感知相移数字全息术

相移数字全息图用传统数字再现可以消除零级像与共轭像,但数字全息术记录的全息图及数字再现像的分辨率被CCD的分辨率所限制.将新兴的压缩感知算法用于数字全息图的稀疏重建,以实现由部分全息图数据得到高分辨率再现像.分析了压缩感知用于重建数字相移全息图的原理,并利用该算法对计算机模拟的相移全息图进行了重建.结果表明,压缩感知算法能够对数字全息图稀疏重建,利用50％的部分全息图数据重建出了较高质量的再现像,并消除了零级像和共轭像.当选用合适的观测器如数字微反射镜器件或随机位相片实现随机观测矩阵时,可以实现单像素成像,从而突破记录全息图CCD分辨率的限制.     

基于脊波和神经网络的大压缩比遥感图像压缩

为了实现大压缩比的遥感图像压缩,利用神经网络的自组织、并行计算和分布式存储的能力,提出一种基于神经网络的压缩方法.在传统单隐层前向神经网络的基础上,该网络使用一种新的能有效处理直线型和曲线型奇异性的多尺度几何分析工具-脊波,作为隐层神经元的激活函数.它不仅具有神经网络压缩的优点;并且由于脊波良好的时、频和方向局域化特性,能够对遥感图像的边缘和轮廓实现更加有效的表示.仿真结果表明:该方法不仅能实现较高的压缩比,而且具有重建图像质量好、学习快速和鲁棒性强等优点.     

基于空分复用的大尺寸全息再现方法

在计算全息再现过程中,受空间光调制器(SLM)自身像素尺寸的影响,再现像的尺寸很小。基于计算全息中相位型全息图上的每一点都包含有物体各个点的全部相位信息,提出一种扩大计算全息再现像尺寸的方法。利用空分复用法,将SLM分为四部分,每部分上分别加载含有物体不同场景的相位型全息图。在光学再现过程中,通过计算机控制加载到相应场景的全息图中相位光栅的变化,调节四个再现像的位置,实现了再现像的无缝拼接,从而得到计算全息大尺寸再现。实验结果证明了该方法的可行性。将该方法跟现有的几种方法进行对比,并进行了相应的讨论。     

基于LC-SLM的CT图像全息三维重构与实时显示

提出了一种将计算全息技术与液晶空间光调制器相结合的CT图像三维重构与实时显示的方法。用计算全息技术对一系列CT图片进行三维信息融合,并根据CT图片数目的不同,制作了不同的计算全息图,基于CT图片本身是数字化二维图像的特点,采用了快速傅里叶变换算法。用液晶空间光调制器作为全息图显示载体,设计了CT图像三维实时显示系统,利用计算机控制实时输出不同的计算全息图到空间光调制器,通过光学再现获得不断变化的三维再现像,实现CT图像的三维实时显示。     

全息图的计算机模拟再现

利用计算机模拟再现全息图的方法,为计算机制全息图和电子全息图的处理和传输过程中再现像像质评价提供了一个客观灵活的分析手段。     

计算机与光学方法相结合的彩色彩虹全息术

提出了计算机制全息与光学全息相结合制作彩色全息图的彩色彩虹伞息术.通过计算机对彩色图像进行自动分色,制作红、绿、蓝3幅丰计算全息图H1,以H1的再现像为对象,用激光制作彩色彩虹全息图H2,用白光再现获得彩色再现像.该方法把汁算机制全息与传统的光学全息相结合,发挥了计算全息与光学全息的优势.在全息图的计算中采用了快速傅里叶变换,加快了计算速度.给出了理论分析和实验结果.     

基于小波变换和对块零树编码压缩方法

本文提出基于小波零树的对块零树压缩编码方法.该方法即具有小波零树压缩编码高压缩比、宜于实时实现的特点,同时具有编码/解码速度快,易于实时传输等优点,可广泛地应用于各种低码率传输应用中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.