双负介质对一维光子晶体量子阱透射谱的影响

为设计高品质的光学滤波器和光学开关,用传输矩阵法研究双负介质对一维光子晶体量子阱（AB）m（CBAABC）n（BA）m透射谱的影响,结果表明:当C层为双正介质时,光量子阱透射谱中出现2n+1条窄透射峰,当C层为双负介质时,呈现简并现象,光量子阱透射峰中仅出现2n-1条窄透射峰;当C层双负介质折射率负值增大时,光量子阱透射谱向禁带中心两侧移动,同时透射峰的品质因子快速提高;当C层双负介质光学厚度负值减小时,光量子阱透射谱向禁带中心靠拢,同时透射峰的品质因子迅速提高;光量子阱透射品质因子对双负介质光学厚度的响应灵敏度高于对折射率负值的响应。双负介质对光量子阱透射谱特性的影响规律,可为光子晶体理论研究及新型量子光学器件设计提供参考。     

双周期光量子阱中的共振透射谱

用传输矩阵法研究了一维双周期光量子阱中的共振透射谱,揭示了光子隧穿双周期光量子阱时共振透射谱线的规律.研究发现,该结构拓宽了光子禁带区域,同时禁带中出现了多个共振透射谱,光子晶体的垒区通带频率范围内共振透射谱线的个数主要与光量子阱中垒区的周期数有关,而光子晶体的阱区通带频率范围内共振透射谱线的个数主要与光量子阱中阱区的周期数有关.同时也发现当双周期光量子阱结构的周期数为N时,适当调节垒区和阱区的周期数,可使每个共振透射谱分裂为N-1条,且各分裂谱线互不交叠,这样在有限的禁带区域可以成倍增加光子束缚态,使信道密度增大,能有效地优化光波带宽的使用,有望在光通信超密集波分复用和光学精密测量中获得广泛应用.     

含双负介质一维光子晶体量子阱的透射谱研究

用传输矩阵法研究一维光子晶体(AB)m(BACAB)n(BA)m的透射谱,研究发现：在双正介质和含双负介质情况下,归一化频率1.0ω0/ω处光子晶体(BACAB)n的能带皆处于光子晶体(AB)m(BA)m的禁带中,均构成以1.0ω0/ω处为对称中心的光量子阱结构。光量子阱透射谱出现对称分布的共振透射峰,呈现明显的量子化效应,透射峰数目和位置可由n调节控制,且双正和含双负光量子阱结构的透射谱结构相同,但后者的透射峰带宽、间距比前者大。该特性可用于设计微波范围内的可调性多通道滤波器和光开关等。     

实现多通道光滤波与放大功能的光子晶体量子阱

为设计高效光滤波、光放大、光衰减和光开关等新型量子光学器件,用传输矩阵法理论研究了一维光子晶体（AB）m（AABAABAABAA）n（BA）m的光传输特性,结果发现:在实介电常量或复介电常量情况下,光子晶体均构成光量子阱结构,并呈现明显的量子化效应,实介电和复介电常量量子阱的透射谱结构与特点相同,透射峰数目和频率位置均与周期数n 密切相关;当折射率nB为含负虚部的复介电常量时,光量子阱的共振透射峰出现不同程度的透射增益、放大现象,增益倍数最高达103 数量级,同时共振透射峰频率处出现很强的受激辐射,辐射极强达到104数量级;当n3 时,随n的增加量子阱透射增益倍数呈现下降趋势,共振透射峰频率处的受激辐射也随之下降;当nB为含正虚部的复介电常量时,共振透射峰则出现明显地透射衰减现象。这些特性为实验制备工作提供理论依据和指导。     

结构周期数对光量子阱透射品质的影响研究

用传输矩阵法理论研究结构周期数对单势垒和双重势垒一维光量子阱透射品质的影响。结果表明:随着阱层周期数的增加,单势垒和双重势垒光量子阱的透射峰均变窄,即品质因子提高,且双重势垒光量子阱透射品质因子提高的速度更快;随着垒层周期数的增加,单势垒、双重势垒光量子阱的透射峰迅速变精细,即透射品质因子迅速提高,且双重势垒光量子阱透射品质因子提高速度快;垒层周期数影响强度明显高于阱层周期数,当垒层周期数增大到一定数值后,双重势垒光量子阱的透射峰品质因子趋于无穷大,亦即光量子阱的各透射峰趋于某个频率点。这些特性可为光子晶体设计新型高品质的光学滤波器等量子光学器件提供指导。     

金属平面半导体量子阱微腔自发发射

应用微腔腔量子电动力学和半导体量子阱物理,讨论了平面半导体量子阱微腔的自发发射,得到了腔结构、量子阱参量和注入载流子下的微腔自发发射谱和载流子寿命.计算发现由于微腔和量子阱分别对光子和载流子的限制,平面微腔可以增进自发发射,具有很强单方向性。     

金属平面半导体量子阱微腔自发发射

应用微腔腔量子电动力学和半导体量子阱物理,讨论了平面半导体量子阱微腔的自发发射,得到了腔结构、量子阱参量和注入载流子下的微腔自发发射谱和载流子寿命．计算发现由于微腔和量子阱分别对光子和载流子的限制,平面微腔可以增进自发发射,具有很强单方向性．     

镜像对称结构一维光量子阱的光传输特性

用传输矩阵法研究对称结构一维光量子阱 （AB）m（ABCBA）n（BA）m的光传输特性,结果发现：随n的增加,光量子阱（AB）5（ABCBA）n（BA）5的透射谱出现（2n-1）条共振透射峰,量子化效应明显;量子阱内部出现很强的局域电场：当n=1时,光量子阱（AB）m（ABCBA）1（BA）m内部局域电场强度随着m增加而增强,而当m=5时,光量子阱（AB）5（ABCBA）n（BA）5内部局域电场强度不随n的变化而改变,但局域范围扩大。这些光学传输特性,为光子晶体设计新型光学器件提供指导。     

垒层周期不对称度对光量子阱透射谱的影响

利用传输矩阵法,研究了垒层周期不对称度对光量子阱透射谱的影响。结果表明:当垒层周期不对称度为零时,光量子阱透射峰随着垒层周期数的增大而变得精细,但其透射率均为100%不变;当垒层周期不对称度为不等于零的恒定值时,光量子阱透射峰的透射率低于100%,但随着垒层周期数的增大,透射峰仅变得精细而透射率不变;光量子阱透射峰的透射率随着不对称度增大而下降,而且不对称度越大,透射率下降越快,同时透射峰变窄的速度也越快。垒层周期不对称度对光量子阱透射谱的影响规律可为光子晶体模型的构造和设计制备等提供方法和依据。     

量子计算机技术发展趋势

根据美国国防高级研究计划局的量子信息科学技术路线图2.0版和<欧洲量子信息处理与通信的研究现状、远景及目标战略报告>1.4版,现在研究的有7种确定的量子计算技术(核磁共振量子计算,离子陷阱量子计算,中性原子量子计算,腔量子电动力学,光量子计算,固态量子计算,超导量子计算)和10多种潜在的量子计算技术.它们可归结成两类,一类是利用原子阱、离子阱俘获原子、光子,实现量子比特的非固态量子计算技术,另一类是采用半导体、超导体等材料的固态量子计算技术.     

Influence of two-dimensional magnetic photonic quantum wells on resonant tunneling spectral character

The non-magnetic material closed photonic quantum well (PQW) and magnetic material PQW structures based on the non-magnetic material open PQW are proposed. The transmission spectra and the field distributions of these three PQW structures are calculated by finite-difference time-domain method, the quantized energy states are researched, and the feasibility of enhancing spectral intensity significantly by selfstructure is disclosed. It is found that the optical transmittance of the magnetic PQW is close to 1, and the energy loss is less compared to non-magnetic PQW.Compared with the closed PQW structures, the device's volume can be reduced, the degree of free regulation of the energy band project can be increased, and more photon bound states can be obtained. The results show that the open PQW is the traveling wave well, and its capability of capturing photons is weak. However, the closed PQW and the magnetic PQW are standing wavewells. Their capabilities for capturing photons are strong,while the light field gradient of the material PQW is bigger.     

Properties of the electron spectrum of a closed two-well spherical quantum dot and evolution of the spectrum with the outer-well width

The theory of the electron spectrum of a closed three-sphere two-well spherical quantum dot is developed and the evolution of the spectrum under variations in the width of the outer spherical well from zero (the steady-state spectrum of a simple closed spherical quantum dot) to infinity (quasi-steady-state spectrum of a simple open spherical quantum dot) is studied. The mechanism of damping of electron states in a closed two-well spherical quantum dot due to the increase in the width of the outer spherical well is considered for the first time. It is established that the physical cause of the transformation of the steady-state spectrum into the quasi-steady-state spectrum is the redistribution of the probabilities that an electron excited to the resonance state of the spherical quantum dot is found in the energy states of the quasi-steady-state band in the entire space of the nanosystem. It is shown that the basic properties of an electron in a simple open spherical quantum dot can be reproduced to any specified accuracy in the model of a closed two-well spherical quantum dot with a sufficiently large width of the outer well. The approach developed here is based on the mathematical formulation of the quantum field theory (the Green’s function method). The approach can serve as a basis for the development of the still lacking theory of quasi-steady-state spectra and the theory of interaction of quasiparticles (electrons, holes) with each other (exciton), as well as with quantum fields (photons) in open multilayered nanosystems.     

Characterizing electric fields in (111)B InGaAs quantum wells using electric field modulated photoluminescence and reflectance techniques

We have performed a series of electroreflectance, photoluminescence, and electric-field-modulated photoluminescence experiments to characterize the strain-induced electric fields in (111)B InGaAs/AlGaAs quantum well p-i-n diode structures. A 180° phase change in the lineshapes of electroreflectance spectra of these samples determines when the quantum well is biased to flatband. Using this bias and a depletion model for the diode, the polarization field in the quantum well can be determined. Contrary to expectations, this polarization field increases significantly with increasing temperature. In addition, at fixed temperature, the quantum well transition energies red-shift with increasing excitation intensity when excited by photons of energy higher than the lowest quantum well transition but lower than the AlGaAs diode's bandgap. When excited with photons of energy greater than the AlGaAs bandgap, the transition energy first red shifts then blue shifts with increasing excitation intensity.     

Large Stark effects for transitions from local states to globalstates in quantum well structures

The electric-field dependence of the optical absorption for the type of quantum well structure in which one or more small wells are embedded in a big well is discussed. In such structures, local energy states confined by the small well(s) and global states confined by the big well have different electric-field dependences while their wave functions remain overlapped. Thus, a large Stark effect (large energy shift and oscillator strength) can be achieved for the optical transition from a local state to a global state. This concept of using the local and global states can be applied to both interband and intersubband transitions. For intersubband transitions, a typical 10-20 meV shift is predicted, compared to a reported 1.1 meV blue shift at the field 30 kV/cm. For interband transitions, the Stark shift is larger than that in the single quantum wells     

QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTO- DETECTOR-Ⅰ OPTICAL ASPECTS

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基于线性光学系统实现量子密集编码

在线性光学系统中,提出了一个使用三光子GHZ态实现密集编码的方案。该方案中,Alice首先对她所持有的两个光子通过线性光学元件进行编码,然后将这两个光子传送给Bob. 接收到光子后Bob使用两个QND对等探测器以及PBS光学元件对他拥有的三个光子的八个量子态进行分辨,根据测量的结果辨别出Alice对她的两个光子所进行的操作。在密集编码过程中Alice仅传送两个光子,但Bob可以获得三比特的经典信息。探测使用的QND装置建立在cross-Kerr nonlinearity基础上,目前已经可以通过电磁感应透明实现。     

超导系统下利用量子非破坏性测量制备量子态

基于超导量子电路系统,我们提出了通过量子非 破坏性测量的方法来实现光子的量子态制备。由约 瑟夫森结构成的两能级超导量子比特,在与腔耦合的情况下,其能级会产生斯塔克位移,位 移的大小与腔 内光子数成正比。利用超导量子比特能级位移受到腔内光子影响这一性质,在波导与超导量 子比特耦合的 情况下,通过波导中光子透过率的测量,从而判断出腔内的光子数。这种测量方式对腔内的 光子不产生影 响,因而是量子非破坏性测量,进而实现腔内光子的量子态制备。此外,我们还讨论了相关 参数对制备效 果的影响,在此基础之上,提出了通过反馈重复测量的方法来提高制备效率,从而实现目标 量子态的快速制备。     

非简并双光子Tavis—Cummings模型中量子态保真度及原子间关联

运用全量子理论研究了双模真空光场作用下的非简并双光子T－C模型体系中量子态保真度和原子间关联特性,讨论了不同的原子初态条件下,原子间偶极相互作用对体系中的量子态保真度和原子间关联的影响,结果表明：初始各自处在激发态的无关联的两原子在双模真空光场和原子间的偶极相互作用下呈现关联特性;初始各自处的基态的无关联的两原子在相互作用下无关联,并且系统、光场和原子三者的最子态在演化过程中不失真。     

Strain tunable quantum dot based non-classical photon sources

Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs.High photon quality and indistinguishability of photons from different sources are critical for quantum information applications.The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g.temperature,electric,magnetic or strain fields.In this review,we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots.Using piezoelectric crystals like PMN-PT,the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly.Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure.Emission from light hole exciton can be tuned,and quantum dot containing nanostructure such as nanowires have been piezo-integrated.To ensure the indistinguishability of photons from distant emitters,the wavelength drift caused by piezo creep can be compensated by frequency feedback,which is verified by two-photon interference with photons from two stabilized sources.Therefore,strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.     

电场驱动HgCdTe/CdTe量子阱拓扑相变引起的光吸收增强研究

HgTe/CdTe量子阱是研究拓扑绝缘体新奇物性的一个很好载体。采用Kane八带k·p模型,对电场驱动Hg1-xCdxTe/CdTe量子阱拓扑相变及其相变前后的光吸收性质进行了研究,并使用BHZ模型对吸收系数进行了解析计算和分析。结果表明:在电场能够驱动Hg1-xCdxTe/CdTe量子阱拓扑相变后继续增大电场,其能带可变为墨西哥帽形状,联合态密度将会增强,导致光吸收相比于无电场时显著增强,与解析计算结果相吻合。对于平行界面偏振光(TE)吸收曲线在带边还形成了双峰结构。文章结果可用于新型红外光电探测器、激光器以及频率选择器等量子阱器件的研究和设计。