质子注入型光子晶体垂直腔面发射激光器制备

在光子晶体垂直腔面发射激光器中采用质子注入工艺,使台面工艺变成纯平面工艺,降低了光子晶体结构制备难度,简化了器件制备,提高了器件的均匀性。质子注入型光子晶体垂直腔面发射激光器中的光子晶体结构,在电流限制孔小于光子晶体缺陷孔时,仍能控制器件光束及模式特性,该结果可用于优化器件阈值电流,制备高性能低阈值电流基横模器件。实验所设计制备的器件,在注入电流小于12.5 mA时,阈值电流2.1 mA,出光功率大于1 mW,远场发射角小于7,有效验证了光子晶体结构在质子注入型面发射激光器中的光束改善及模式控制作用。     

新型垂直腔面发射激光器的研制

热问题是制约垂直腔面发射半导体激光器(VCSEL)的关键难题之一。为改善垂直腔面发射激光器的热特性,提高输出功率,设计并制备了一种新型内腔接触式结构VCSEL。在出光孔径为16μm时,同时制备传统结构和新型结构两种器件并对其进行测试,传统结构VCSEL的阈值电流为11.5 mA,当注入电流为34 mA时,最大输出功率达到7.3 mW;新结构器件的阈值电流为9 mA,当注入电流为35 mA时,最大输出功率达到10.2 mW;新结构的阈值电流降低了21.7%,最大输出功率提高了28%。结果表明,这种内腔接触式电极结构有望改善器件的热特性和光电性能。     

新型垂直腔面发射激光器的研制北大核心CSCD

热问题是制约垂直腔面发射半导体激光器(VCSEL)的关键难题之一。为改善垂直腔面发射激光器的热特性,提高输出功率,设计并制备了一种新型内腔接触式结构VCSEL。在出光孔径为16μm时,同时制备传统结构和新型结构两种器件并对其进行测试,传统结构VCSEL的阈值电流为11.5 mA,当注入电流为34 mA时,最大输出功率达到7.3 mW;新结构器件的阈值电流为9 mA,当注入电流为35 mA时,最大输出功率达到10.2 mW;新结构的阈值电流降低了21.7%,最大输出功率提高了28%。结果表明,这种内腔接触式电极结构有望改善器件的热特性和光电性能。     

二维光子晶体对面发射激光器横模控制研究

垂直腔面发射激光器的单模输出特性在光网络数据传输光互连、光存储和激光打印中有重要的应用.传统的氧化限制型垂直腔面发射半导体激光器由于串联电阻大、发热严重而很难工作在单模状态.二维光子晶体结构可以有效地控制垂直腔面发射激光器的横向模式,使器件工作在单模状态下.从理论上系统研究了光子晶体垂直腔面发射半导体激光器的单模条件,成功设计了一组单模光子晶体垂直腔面发射半导体激光器,并通过常规工艺制作出功率0.6 mW、边模抑制比大于30 dB、阈值电流4 mA、远场发散角8.4°、不受电流注入影响的单模光子晶体垂直腔面发射半导体激光器.实验证明:光子晶体可有效地进行横模控制.     

大功率垂直腔底发射半导体激光器的光束质量

从M2因子、远场发散角、近场及远场光强分布等方面对大功率底发射半导体激光器光束质量进行研究,分析了不同器件参数对光束质量的影响,为寻找有效改善光束质量的方法提供了依据。设计了一种具有新型排列方式的垂直腔面发射半导体激光(VCSEL)阵列。通过调制阵列中各单元直径以及单元间距,在4 A的工作电流下得到1 kW/cm2的高功率密度和高斯远场分布。与具有相同出光面积的单管器件和4×4二维阵列比较,新型阵列的光谱特性及光束质量均具有优越性。     

氧化限制型795 nm垂直腔面发射激光器

单模795 nm垂直腔面发射激光器作为铷原子钟的激光光源,一般采用氧化限制结构获得单模输出。对垂直腔面发射激光器外延结构以及氧化限制孔径进行了优化设计。基于有限元分析方法,利用光纤波导理论和热电耦合模型,对氧化孔径的光学和电学限制进行了模拟,计算分析了实现单模和良好热电特性所需的氧化孔径大小。实验制备了具有不同氧化孔径的器件,并进行了功率-电流以及光谱特性测试。当氧化孔径为1.9μm时,在3～7 mA注入电流下器件始终保持单模输出,边模抑制比大于35 dB;器件保持单模输出的最大氧化孔径为3.8μm,室温下阈值电流为1 mA,最大饱和输出功率为2 mW,斜率效率为0.3 W/A,3 mA注入电流下的出射波长为790 nm,边模抑制比大于30 dB。制备的室温下单模特性良好的790 nm垂直腔面发射激光器,为实现高温下795 nm偏振稳定单模输出提供了可能。     

高光束质量大功率垂直腔面发射激光器

采用新型多环形腔结构优化垂直腔面发射激光器（VCSEL）的光场分布,解决了大孔径器件严重的载流子聚集效应导致的输出功率低、光束质量差的问题。研究结果表明：新型结构VCSEL较孔径相同的传统结构器件呈现更低的阈值电流,特别是输出功率较传统结构提高了近56%,且远场呈高斯分布。研究工作为实现高光束质量大功率垂直腔面发射激光器提供了新的技术途径。     

耦合垂直腔面发射激光器的阈值及输出特性

针对耦合垂直腔面发射激光器,利用边界条件,结合激光器的中间DBR层的耦合传输矩阵,推导出了不同激射波长工作时,两腔内光场应满足的方程,由此得到两腔光子之间的耦合因子,然后结合稳态载流子速率方程,按照激射波长,得出了器件的四种工作状态,并详细地讨论了顶腔和底腔注入电流对器件输出特性的影响.     

高功率单高阶模倒置表面浮雕结构垂直腔面发射激光器

提出并研究了一种带有环形出光孔的倒置表面浮雕结构垂直腔面发射激光器.该器件最突出的结构特点在于,支持稳定的单高阶横向模式激射.在输入电流为六倍阈值电流时,输出功率高达9.8 m W,边模抑制比将近30 d B.在外界为360 K高温时,输出功率仍可达4 m W.且其远场表现出的高斯光束发散角较小.     

外腔半导体激光器的空间模式特性分析

通过对宽发光截面半导体激光器(BAL)输出激光空间特性和远场分布的理论分析,并根据激光振荡的自再现原理,导出了反馈注入外腔宽发光截面半导体激光器输出激光的光场分布。计算表明外腔的反馈作用可以看作是频谱面上引入了一个带通滤波器,通过选择特定模式的频谱分量进行反馈注入,从而实现选模和改善输出激光光束质量的目的。完成了相应的外腔反馈注入宽发光截面半导体激光器的实验,获得了单瓣近衍射极限的激光输出,在工作电流为1.18倍阈值电流时,获得远场发散角为0.074°的输出激光,计算得相应的光束衍射倍率因子M2为1.16,和理论计算的结果基本吻合。     

Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures

In this letter, we demonstrate a vertical-cavity surface-emitting laser (VCSEL) with a petal-shaped light-emitting aperture, which is realized by the Zn-diffusion technique, at a wavelength of 850 nm. The demonstrated device behaves like a two-dimensional VCSEL array and each light-emitting unit can have high coherence of in-phase lasing to form a near fundamental supermode emission. The measured far-field distributions of such a device exhibit single-lobe (spot), high-power (>7.5 mW), and narrow divergence angle (/spl sim/6/spl deg/) performance under a wide range of bias current. The ratio of in-phase lasing mode to total lasing modes, which include isolated single mode, in-phase, and out-of-phase modes, has also been analyzed by the measured far-field distributions and the theoretically calculated patterns.     

795nm单模垂直腔面发射激光器

针对铷原予能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL).根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构.采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试.当有源区直径从6 μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 dB增加到34.05 dB,阈值电流由0.77 mA减小到0.35 mA.有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 mW,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°.85℃时3.5 μm有源区直径的VCSEL芯片输出功率为0.125 mW,激射波长为795.3 nm.室温3 dB带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求.     

Wafer-bonded 1.55 μm vertical cavity laser arrays for wavelengthdivision multiplexing

The first electrically pumped 1.55 μm multiple wavelength VCSEL array is demonstrated. The wafer bonded array consists of four channels operating between 1509 and 1524 nm. Multiple wavelengths were defined using an etched intracavity superlattice prior to bonding. Threshold currents of 0.9 mA and peak output powers of 0.45 mW were measured     

Ultralow threshold current vertical-cavity surface-emitting laserswith AlAs oxide-GaAs distributed Bragg reflectors

An electrically-pumped, vertical-cavity, surface-emitting laser (VCSEL) using an AlAs oxide-GaAs DBR above the AlGaAs-GaAs-InGaAs gain region and a conventional AlAs-GaAs DBR below is described. By selective oxidation, devices with current flow apertures of different areas are fabricated, and in 8-μm-square devices, threshold currents as low as 0.22 mA are achieved. Being the first electrically-pumped VCSEL to utilize the oxide-based DBR, it demonstrates that the oxide-based DBR is of sufficient quality to realize submilliampere threshold currents     

Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction

Monolithic, multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) arrays have been obtained by the surface-controlled enhancement and reduction of the MOCVD epitaxial growth rate, achieving a periodic, graded wavelength span greater than 30 nm. Room-temperature (RT), electrically pumped continuous-wave (CW) lasing is demonstrated, with uniform threshold currents of 5.5/spl plusmn/0.5 mA with typical output powers of 0.5 mW. We show here for the first time both the enhancement and the reduction of the growth rate of the entire VCSEL structure and demonstrate the controlled variation of the VCSEL lasing wavelength over a widened spectral range by exploiting both effects.     

Threshold currents of 1.2-1.55 μm P-substrate buried crescentlaser diodes

P-substrate buried crescent (PCB) laser diodes whose wavelength ranged from 1.2 to 1.55 μm have been fabricated. The threshold currents as low as 10 mA have been obtained in this wavelength range experimentally. The calculated threshold currents of 13, 13, and 14 mA at 1.2, 1.3, and 1.55 μm almost coincide with the measured values     

894 nm高温工作氧化限制型基横模VCSEL研究

针对芯片原子钟（铯）用激光光源系统对垂直腔面发射激光器（VCSEL）模式及工作温度的需求,研制出可以高温工作的氧化限制型基横模 894.6 nm VCSEL。通过缩小VCSEL氧化孔直径至3 μm,限制VCSEL高阶横模激射,保证器件基横模低阈值电流工作。通过常温下腔模与材料增益失谐12 nm 的结构设计,使器件能够在50~65 ℃ 高温时,激射波长对准原子能级且工作模式稳定。实验所制备的VCSEL在工作温度为55 ℃、注入电流1.8 mA 时,激射波长达到 894.6 nm,边模抑制比（SMSR）大于35 dB,基横模功率为0.75 mW,具有11.4°的远场发射角。当温度为65 ℃时,器件SMSR大于25 dB,基横模功率大于0.1 mW。该高温基横模工作的VCSEL在芯片原子钟中具有重要的应用前景。     

Impact of Al composition on RF noise figure of AlGaAs/GaAsheterojunction bipolar transistors

The influence of Al content on the RF noise characteristics of Al _xGa_1-xAs/GaAs heterojunction bipolar transistors (HBT's) is presented. It is shown that the minimum noise figure (F_min) at 2 GHz is reduced by increasing the Al mole fraction (x). This observed improvement in noise figure is directly correlated to the differences in dc current gain. The lowest measured F_min(2 GHz) of HBT's with emitter dimensions 2×(3.5×30) μm², were 1.3, 1.61, and 2.1 dB for x=0.35, 0.30, and 0.25 devices, respectively at I_c=3 mA. The measured results were found to agree well with calculated values over a wide range of collector currents     

Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible(670 nm) vertical-cavity surface-emitting laser diodes

Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes