热处理对Sb∶SnO_2透明导电薄膜光电性能的影响

由烧结法制备了5Sb_2O_5·95SnO_2(mol%)陶瓷靶材,以所制靶材利用射频磁控溅射法在石英玻璃基片上制备得到高质量的Sb∶Sn O2(ATO)透明导电薄膜,研究了热处理温度对ATO薄膜的结构和光学与电学性能的影响。结果表明:热处理对ATO薄膜的相结构,结晶质量及性能均有一定的影响。随着温度升高,所制薄膜的晶粒尺寸逐渐长大,方块电阻逐步减小,最小值为9.3Ω/;红外反射率先增大后减小,并在热处理温度为600℃时达到极大值,为89%。薄膜可见光透过率均在80%以上,温度为600℃时最高达到91.3%。     

铜基板法制备纳米碳纤维薄膜的研究

以乙炔(C2H2)作为碳源,采用化学气相沉积法(CVD)在经过草酸溶液腐蚀的铜基板表面制备出纳米碳纤维薄膜。采用扫描电子显微镜(SEM)和X射线粉末衍射仪(XRD)对产物进行结构与形貌表征,并对碳纤维薄膜进行其在基板上的附着性测试。结果表明,草酸腐蚀时间、化学气相沉积反应时间的变化等因素对纳米碳纤维薄膜的生长与形貌有一定影响。在反应温度为350℃时,铜基板表面制备出了一层均匀的纳米碳纤维薄膜,纤维直径为300~400 nm,薄膜的厚度为20~30μm。制备的纳米碳纤维薄膜对基板有良好的附着性。     

溶胶-凝胶方法在玻璃表面制备ATO薄膜过程中Na+离子扩散的研究

利用金属醇盐以溶胶-凝胶方法制备了Sb掺杂SnO2(ATO)薄膜,研究了玻璃基板中Na+离子扩散对薄膜性能的影响及其机理,并进行了在玻璃表面预镀SiO2底膜以防止这种扩散的研究工作,发现预镀SiO2底膜后可以有效地阻止Na+离子的扩散从而改善了ATO薄膜的导电性能.     

喷雾热解法制备SnO2:Sb透明导电薄膜

采用喷雾热解技术制备出了光电性能优良的SnO_2:Sb透明导电薄膜,对薄膜的结构特性、光电性质以及制备条件对薄膜性能的影响进行了研究。并进一步研究了喷雾热解法中薄膜的形成过程和工艺参数对薄膜微观结构和性能的影响。实验结果表明:在Sb掺杂量为11％(摩尔分数)和基板温度为500℃的条件下,SnO_2:Sb薄膜具有最佳的光电性能,平均可见光透过率为82％,方块电阻达13.4Ω/□,电阻率为4.9×10~(-4)Ω·cm。     

基板温度对常压化学气相沉积法制备TiO2复合薄膜性能的影响

以Ti(OC3H7)4为先驱体,SnO2:F镀膜玻璃为基板,采用常压化学气相沉积法制备了TiO2/SnO2:F复合薄膜.用扫描电镜、X射线衍射、紫外-可见-近红外透射光谱等手段对样品的物相和性能进行了研究.结果表明:金红石相的SnO2:F底膜促进了TiO2金红石相的形成;当基板温度为480 ℃时,TiO2/SnO2:F复合薄膜出现针状结构,但随着基板温度继续升高,针状结构消失.样品的可见光透过率随基板温度而变化,其值为60%～90%,基本满足建筑物的采光要求.当基板温度为530 ℃时,TiO2/SnO2:F复合薄膜的光催化性能最好.     

镀SiO2膜玻璃基片上SnO2:Sb薄膜的溶胶-凝胶法制备及表征

用溶胶-凝胶法在已镀SiO2膜的钠钙硅玻璃和没有镀SiO2的钠钙硅玻璃基片上镀制了锑掺杂摩尔分数为8．0％的二氧化锡薄膜。对不同热处理温度下薄膜样品的结构和性能进行了表征。结果表明：在673～823K范围内热处理60min时,薄膜以四方相金红石结构存在;随着热处理温度的提高,晶面衍射峰由宽化趋向尖锐,结晶逐渐完善;薄膜中的Sn以 4价的形式存在,掺杂的Sb以 5和 3价形式存在;当温度为673K和723K时,凝胶中的C没有完全燃尽,以C—O和C—O形式存在于薄膜中。镀膜样品的可见光平均透过率随热处理温度的升高而增大;在热处理温度相同时,预先镀有SiO2膜的玻璃基片上制备的锑掺杂二氧化锡(ATO)薄膜的方块电阻较没有镀SiO2的小。     

镀SiO_2膜玻璃基片上SnO_2∶Sb薄膜的溶胶-凝胶法制备及表征

用溶胶凝胶法在已镀SiO2膜的钠钙硅玻璃和没有镀SiO2的钠钙硅玻璃基片上镀制了锑掺杂摩尔分数为8.0%的二氧化锡薄膜。对不同热处理温度下薄膜样品的结构和性能进行了表征。结果表明:在673～823K范围内热处理60min时,薄膜以四方相金红石结构存在;随着热处理温度的提高,晶面衍射峰由宽化趋向尖锐,结晶逐渐完善;薄膜中的Sn以+4价的形式存在,掺杂的Sb以+5和+3价形式存在;当温度为673K和723K时,凝胶中的C没有完全燃尽,以C—O和CO形式存在于薄膜中。镀膜样品的可见光平均透过率随热处理温度的升高而增大;在热处理温度相同时,预先镀有SiO2膜的玻璃基片上制备的锑掺杂二氧化锡(ATO)薄膜的方块电阻较没有镀SiO2的小。     

SnO2基导电陶瓷靶材的制备及应用性能表征

为了获得高质量的SnO2薄膜,我们需要制备高密度、高导电的优质SnO2靶材。这里以分析纯的SnO2、Sb2O5粉体为制备原料,采用冷等静压加上常压烧结方法制备高导电性Sb∶SnO2(ATO)陶瓷靶材。用X射线衍射(XRD)和扫描电子显微镜(SEM)分析靶材的化学成分和微观形貌并系统研究了不同的成型压力对靶材电学特性和致密度的影响。结果表明:成型压力的大小对于ATO靶材本身的致密度及电学特性都有很大的影响。成型压力为15MPa时,ATO靶材的电阻率最小,为0.38Ω.cm;SnO2靶材的收缩率达10.71%,靶材的致密度为95%;靶材可在射频磁控溅射仪下正常工作,并成功在玻璃基片上沉积性能良好的高红外反射透明导电SnO2薄膜。此制备过程操作方便,工艺简单,降低了靶材的成本,从而能够大大扩大透明导电薄膜的应用领域。     

锑掺杂量对ATO薄膜结构及光、电性能的影响

以四氯化锡和三氯化锑为主要原料,采用溶胶-凝胶法制备了不同锑掺杂量的纳米锑掺杂二氧化锡（ATO）薄膜。分别利用XRD、FESEM、紫外可见分光光度计和四探针电阻仪对晶体结构、薄膜形貌、光透过率和薄膜方块电阻进行表征,考察锑掺杂量对ATO薄膜晶体结构、晶粒尺寸、光透过率和导电性能的影响。结果表明：所制备的ATO薄膜为（110）面择优取向的四方相锡石结构,晶粒尺寸小于26 nm,当锑掺杂量为10%（物质的量分数）时,ATO薄膜具有最小的方块电阻（60.1 Ω/□）,可见光透过率大于85%。     

气溶胶辅助CVD法制备F掺杂SnO2薄膜及其性能

采用气溶胶辅助化学气相沉积法(AACVD)在玻璃衬底上沉积F掺杂SnO_2(FTO)薄膜,研究了前驱液中不同F/Sn摩尔比制备的FTO薄膜的结构、表面形貌、光学、电学及光致发光性能。结果表明:所制备FTO薄膜均为(200)面择优取向的多晶四方金红石相结构;前驱液中F/Sn摩尔比的增加,会导致(110)面的衍射峰强度增加,薄膜表面堆积颗粒形状发生变化,薄膜样品光学透过率提升;当F/Sn摩尔比=40%时,FTO薄膜具有最大的载流子浓度1.031×10~(21) cm~(–3)以及最小的电阻率3.42×10~(–4)?·cm,这可归结为适量F的存在产生不同的缺陷影响。(200)面择优取向FTO薄膜光致发光谱可用于表征不同缺陷形式的跃迁。     

二维MoSe2及其柔性光电探测器的制备与性能

以钼酸钠和硒粉为原料,采用水热法制备了MoSe2.通过XRD、SEM和TEM对MoSe2进行了表征,并对MoSe2光电探测器的光电特性进行了测试.结果表明,MoSe2为粒径约200 nm的花状微球;MoSe2器件在520 nm激光波长下,在光强为0.5 mW时的响应度最高,为7.5×10–5 A/W,对应的光探测率为1×107 cm·Hz1/2/W,光响应度和光探测率随着光强的增加而增大.此外,MoSe2光电探测器在405 nm激光下能实现快速响应,其上升时间为47 ms,下降时间为45 ms.     

ZrO_2膜中的应力

用射频溅射制备了ZrO2 膜 ,发现膜呈压应力剥落 ,用X射线衍射分析了薄膜中的应力 ,提出了避免剥落的对策。     

Wettability and interfacial reactions of a low Hf-containing nickel-based superalloy on Al2O3-based,SiO2-based,ZrSiO4, and CoAl2O4 substrates

To understand the wetting behavior and interfacial phenomena between molten superalloys and ceramic materials, the wettability and interfacial reactions of a low Hf-containing Nickel-based superalloy on the Al₂O₃-based, SiO₂-based, ZrSiO₄, and CoAl₂O₄ substrates were studied using the sessile drop method at 1773 K. The wetting angles of the alloy on the Al₂O₃-based, SiO₂-based, ZrSiO₄, and CoAl₂O₄ substrates were 141.4°, 143.5°, 135.7°, and 128.4°, respectively. This indicated that the wettability of the alloy on the Al₂O₃-based substrate was comparable to that on the SiO₂-based substrate, and the wettability of the CoAl₂O₄ system was the best among the four systems. The microstructure characteristics of the interface implied that Hf has a strong tendency to react with ceramic substrates, even at low contents. Additionally, the interfacial reactions transformed the Al₂O₃-based, SiO₂-based, ZrSiO₄, and CoAl₂O₄ ceramic substrates into (Al₂O₃ + HfO₂), (Al₂O₃ + HfO₂), (Al₂O₃ + HfO₂ + ZrO₂), and (Al₂O₃ + HfO₂ + Co), respectively, which were in contact with the alloys. The experimental results demonstrated that the wettability of the system was governed by the properties of the reaction products.     

射频CO_2激光陶瓷基板划片机

介绍了RFCO2激光器及其陶瓷基板划片的特点;分析了RFCO2激光陶瓷基板划片的机理,给出了整机总体设计方案。对导光系统的激光束进行了模拟,给出了导光系统的光路图及聚焦镜焦平面处的光斑尺寸及能量分布图,整机性能指标达到国外进口机的水平。     

不同疏松度TA2基材对RuO2-TiO2阳极性能的影响

采用不同疏松度的工业纯钛TA2为基材制作RuO2-TiO2阳极涂层. 对不同疏松度基材进行了金相、物相、密度、硬度和电阻率分析,并对所制钛阳极的组织结构、形貌特征、电催化活性和耐腐蚀性进行了比较. 结果表明,疏松度大(疏松)的纯钛TA2硬度比疏松度小(密实)的高60 Hv,电阻率高将近0.2 W×mm;不同基材对阳极涂层的晶体结构影响不大,采用疏松纯钛TA2所制电极的涂层由于刻蚀程度难以控制,涂层表面结构较粗糙,电极的电催化活性差,电化学性能略差,析氯电位提高了约10 mV,强化寿命比密实基体短100 min左右,且容易剥落失效.     

Ferroelectric properties of ZrO2 films deposited on ITO-coated glass

In this work, the ferroelectric characteristics of ZrO₂ thin films grown on ITO-coated glass have been investigated. The ferroelectric nature of the ZrO₂ films has been studied by polarization-electric field (P-E) hysteresis loops and found to be optimum for the films processed by rapid thermal annealing at 600 °C. The increase in the annealing temperature improves the ferroelectric properties through the increase of the in-plane strain that causes the formation of the ferroelectric orthorhombic phase. The formation of the orthorhombic phase was confirmed through high-resolution transmission electron microscopy. The effect of the electric field on the polarization switching kinetics of ZrO₂ films has been investigated revealing that the switching kinetics follows the nucleation limited switching (NLS) model. The activation fields estimated from the peak values of the polarization currents (i_m) and the time (t_m) at which i_m occurs are in good agreement with the values obtained from the switching characteristic time of the NLS model. This work paves the way towards the integration of (pseudo)-binary oxide thin films on cheap substrates like glass for the next-generation of non-volatile memories.     

Multilayer formation via spinodal decomposition in TiO2-VO2 epitaxial films on sapphire substrates

We present multilayer formation via spinodal decomposition in rutile TiO₂-VO₂ (TVO) epitaxial films on sapphire substrates. (001)- and (101)-oriented TVO solid-solution films are grown epitaxially on TiO₂/Al₂O₃ using a pulsed laser deposition technique and annealed inside the spinodal region. X-ray diffraction measurements and scanning transmission electron microscopy (STEM) observations show that the films are phase-separated along the [001] direction and lamellar structures are formed in a parallel or slanted direction to the sapphire substrates depending on the film orientation. The results indicate the multilayer formation via spinodal decomposition in the TVO films. STEM investigations also reveal a relatively high Ti concentration in the decomposed phases, reflecting the influence of lattice deformation on the phase decomposition in the films. Our work shows that spinodal decomposition is a promising approach for the formation of a multilayer structure in TVO films and helps deepen understanding the spinodal decomposition in TVO system.     

玻璃基片上ZnFe2O4薄膜光催化降解性能的研究

采用旋转镀膜法在玻璃表面制备了ZnFe2O4薄膜，通过改变ZnFe2O4的浓度、烧成温度及薄膜层数，研究了ZnFe2O4薄膜的均匀性及对甲基橙的光催化降解性能。结果表明，ZnFe2O4薄膜均匀性好，对甲基橙有较高的分解效果。     

Medium dielectric constant and low-loss PTFE composites filled with MgO-LiF co-doped Li2TiO3 particles

In this work, we presented a simple strategy to fabricate medium dielectric constant and low-loss composites for microwave substrate applications. MgO-LiF co-doped Li₂TiO₃ (LT) powders were fabricated by the solid-state reaction route and modified by perfluorooctyltriethoxysilane (F8261). The LT/polytetrafluoroethylene (PTFE) composites were fabricated by cold pressing and hot treatment. The XPS and contact angle analysis indicated that the fluorinated group was introduced to LT particle successfully. The effects of modified LT powders content on the dielectric, thermal, and mechanical properties of composites were investigated. As the modified LT content increases, the dielectric constant, dielectric loss, and temperature coefficient of dielectric constant (τ_ε) increase while the bending strength and coefficient of thermal expansion (CTE) decrease, which is attributed to the higher dielectric constant of LT ceramic, more pores, stable τ_ε of LT ceramic, interface defects and low CTE of LT ceramic, respectively. The composites with 60 wt % LT exhibit the best microwave dielectric properties: ε_r = 6.8, tanδ = 0.001, τ_ε = −29.6 ppm °C⁻¹ at 8 GHz and acceptable coefficient of thermal expansion (28.3 ppm °C⁻¹). Therefore, modified LT powders filled PTFE composites are potential materials for high-frequency microwave substrate applications. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47980.     

Al2O3-SiO2-TiO2-ZrO2复合膜与基体结合性的研究

采用Sol-Gel法制备了Al2 O3-SiO2 -TiO2 -ZrO2 复合多孔膜 ,并在不同基体上进行了涂膜实验研究。结果表明 ,以孔隙率为46.8%、最可几孔径为几个微米的α -Al2 O3作基体 ,可以制备出膜厚为 1～ 2 μm纳米级孔径的Al2 O3-SiO2 -TiO2 -ZrO2 复合多孔膜 ,Al2 O3复合膜与α -Al2 O3基体的结合性最好。通过对α -Al2 O3基体分析发现 ,基体的成型压力、烧成后基体的孔径大小以及膜与基体之间的应力作用对Al2 O3-SiO2 -TiO2 -ZrO2 复合多孔膜形成影响甚大。对膜与基体的结合强度进行了研究 ,结果表明 ,膜的热稳定性高 ,耐酸、耐碱性好 ,相对硬度介于 6～ 7之间