Linux系统运行态的动态变频低功耗策略

基于自主设计的嵌入式低功耗平台,深入分析了Linux系统运行态的低功耗管理技术.在分析Linux运行时动态变频技术的基础上,设计实现了动态变频的驱动层和内核适配层,提出了基于打分制的用户层策略和低开销的ondemand内核态策略.实验结果表明,在典型的应用场景下,采用提出的系统运行态功耗管理技术后,与优化前相比,系统运行功耗可降低28％.     

基于阈值预测的Linux系统休眠态低功耗策略

基于自主设计的嵌入式低功耗硬件平台,深入分析了Linux系统休眠态的功耗管理技术.在分析Linux休眠机制下高级电源管理(APM,Advanced Power Management)的基础上,设计并实现了系统休眠态的驱动层和内核适配层;提出了一种基于阈值预测的系统休眠策略.基于硬件平台的实验结果表明,设计的系统功耗管理技术能够将系统休眠功耗降低到全速运行时的6％,接近硬件平台的理论休眠功耗极限.     

基于嵌入式处理器的系统级低功耗管理研究

针对嵌入式系统低功耗设计问题,分析了动态功率管理DPM和动态电压/频率调节DVFS两种嵌入式功耗管理策略,并提出了系统级低功耗控制框架.讨论了基于嵌入式处理器i.MX1硬件平台实现系统级功耗控制方案,并给出了具体的设计方法.实际应用表明,该设计方案可有效降低系统能耗.     

应用于低功耗SoC的动态时钟管理技术

文章着重分析了基于系统级的低功耗技术,提出了动态时钟管理技术,介绍了其背景、原理以及在系统低功耗中发挥的重要作用。最后,将该技术应用到一款LCD控制器中。事实表明,动态时钟管理技术在保证系统性能的前提下,大大降低了功耗,取得了很好的效果。     

Android手机低功耗GPS导航软件设计与实现

随着智能手机功能日益丰富完善以及移动互联网的迅速发展,智能手机的功耗管理就显得越来越重要了.传统的关于功耗管理都是从显示屏、网络模块(GPRS/WiFi)和处理器等入手,文中通过优化GPS软件实现低功耗.通过阐述现在导航软件的工作原理并分析手机定位导航功耗情况,最后通过对比测试当前android系统4大主流导航软件功耗情况,并结合自己提出的低功耗编程以及软件运行流程,设计并实现了一款低功耗GPS导航软件,通过测试,验证了该软件的可行性以及低功耗特性.     

一种高性能指纹锁硬件平台的设计

为提高嵌入式指纹锁稳定性,降低系统功耗,减少硬件成本,设计一种基于DSP5509的指纹锁硬件平台.与传统嵌入式指纹平台相比,该系统运用AVR单片机MEGA8作为控制模块,光学CMOS图像传感器采集图像,提高稳定性减少成本;采用TI公司最低功耗、1.8 V的DSP移植指纹算法,低功耗器件XC6206P332MR管理电源,降低系统功耗.根据实际硬件平台特点,给出系统调试时需要注意的事项.实验结果显示,该系统平台面积为25 mm2,2节干电池稳定运行一个月,静态功耗低于15μA,动态功耗小于140 mA     

基于GPRS短信通讯的低功耗智能门锁系统设计

随着人工智能技术的不断发展,门锁系统广泛应用于各个领域,其性能、功耗及管理方式越来越受人们重视.针对智能门锁管理、功耗、无网通讯等问题进行优化设计,文中提出了一种基于GPRS短信通讯技术的低功耗门锁系统优化设计方法.该系统集智能报警、远程管理和人机交互等功能于一体,对电路、运行策略进行了优化,实现了极低的待机电流.系统...     

一种数字信号处理器的动态功耗管理方案

动态功耗管理是一种系统级低功耗设计技术，降低功耗的思路是根据系统当前负载动态调整时钟频率或者关闭时钟。文章以数字信号处理器为模型，提出了一种系统属性可调节的动态功耗管理方案，它支持通过软硬件配合对功耗进行灵活的动态管理，其管理策略采用了适应性预测算法，并引入非确定性因子。实验结果表明，该方案可以大大降低数字信号处理器的功耗。     

台积电和ARM合作，显著降低65纳米低功耗测试芯片的功耗

日前，台积电和ARM宣布：双方在65纳米低功耗测试芯片上的设计合作显著降低了其动态功率和耗散（Leakage）功率。两家公司认为创新的低功耗设计技术对于最终的成功起到了关键的作用。 长达一年的合作成果是一片拥有先进功耗管理技术的基于ARM926EJ-S^TM处理器的65纳米测试芯片。通过采用动态电压和频率缩放技术，测试芯片可以在针对各种运行模式的最低可能功耗水平下运行。这样，ARM测试芯片将动态功耗降低了50％以上。此外令人瞩目的是在这个台积电65LP低耗散工艺上，先进的功率门控技术进一步把待机耗散降低了8倍。     

PowerPC 603e低功耗技术的开发

PowerPC 603e是一款高性能、低成本、低功耗的32位超标量RISC微处理器。本文简要介绍了PowerPC 603e结构，详细介绍了PowerPC 603e动态功耗管理、静态功耗管理设计技术及一些低功耗技术。最后给出了PowerPC的发展现状．     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.