SEU/SET加固D触发器的设计与分析

针对D触发器的抗单粒子辐射效应加固,提出了一种新型的保护门触发器(GGFF)设计,使用两个保护门锁存器串接成主从触发器.通过Spice仿真验证了GGFF抗SEU/SET的能力,通过比较和分析,证明GGFF对于具有同样抗SEU/SET能力的时间采样触发器(TSFF),在电路面积和速度上占据明显优势.     

一种新颖高效抗SEU/SET锁存器设计

随着工艺技术的发展,集成电路对单粒子效应的敏感性不断增加,因而设计容忍单粒子效应的加固电路日益重要.提出了一种新颖的针对单粒子效应的加固锁存器设计,可以有效地缓解单粒子效应对于电路芯片的影响.该锁存器基于DICE和C单元的混合结构,并采用了双模冗余设计.SPICE仿真结果证实了它具有良好的抗SEU/SET性能,软错误率比M.Fazeli等人提出的反馈冗余锁存器结构减少了44.9%.与经典的三模冗余结构比较,面积开销减少了28.6%,功耗开销降低了超过47%.     

一种自恢复容SEU锁存器的设计

随着集成电路工艺水平的不断提高、器件尺寸的不断缩小以及电源的不断降低,传统的锁存器越发容易受到由辐射效应引起的软错误影响。为了增强锁存器的可靠性,提出了一种适用于低功耗电路的自恢复SEU加固锁存器。该锁存器由传输门、反馈冗余单元和保护门C单元构成。反馈冗余单元由六个内部节点构成,每个节点均由一个NMOS管和一个PMOS管驱动,从而构成自恢复容SEU的结构。在45 nm工艺下,使用Hspice仿真工具进行仿真,结果表明,与现有的加固方案FERST[1]结构相比,在具备相同面积开销和单粒子翻转容忍能力的情况下,提出的锁存器不仅适用于时钟门控电路,而且节省了61.38%的功耗-延迟积开销。     

纳米级低开销SEU免疫型XC Domino动态门

在纳米级工艺条件下,高速运算单元核心部件XC Domino动态门面临严重的软错误问题.本文提出一种适用SEU类软错误容错设计的免疫型XC Domino动态门,此免疫型动态门借鉴了锁存器单元稳定结构,对于动态门的输出端实施P-type扩散区隔离以完成SEU的防护.通过Spectre电路仿真,验证了SEU免疫型动态门能够实现对于高达2倍Vdd振幅电压脉冲干扰的SEU类软错误容错；另外,与传统XC Domino动态门容错设计方案相比,免疫型动态门能够降低13.64％的门延时,并能在减少47.37％面积开销的同时降低75.54％功耗开销.     

一种低开销的抗SEU锁存器

随着微电子技术的不断进步,集成电路工艺尺寸不断缩小,工作电压不断降低,节点的临界电荷越来越小,空间辐射引起的单粒子效应逐渐成为影响芯片可靠性的重要因素之一。针对辐射环境中高能粒子对锁存器的影响,提出了一种低开销的抗SEU锁存器(LOHL)。该结构基于C单元的双模冗余,实现对单粒子翻转的防护,从而降低软错误发生的概率。Spice模拟结果显示,与其他相关文献中加固锁存器相比,LOHL在电路面积、延迟和延迟-功耗积上有优势。     

改进DICE结构的D触发器抗SEU设计

基于DICE结构主-从型D触发器的抗辐照加固方法的研究,在原有双立互锁存储单元(DICE)结构D触发器的基础上改进电路结构,其主锁存器采用抗静态、动态单粒子翻转(SEU)设计,从锁存器保留原有的DICE结构。主锁存器根据电阻加固与RC滤波的原理,将晶体管作电阻使用,使得电路中存在RC滤波,通过设置晶体管合理的宽长比,使其与晶体管间隔的节点的电平在SEU期间不变化,保持原电平状态,从而使电路具有抗动态SEU的能力。Spectre仿真结果表明,改进的D触发器既具有抗动态SEU能力,又保留了DICE抗静态SEU较好的优点,其抗单粒子翻转效果较好。     

反熔丝和Flash FPGA对造成器件功能故障具有免疫能力

在设计高可靠性系统时,无论是陆地、航空或太空应用,设计人员都必须非常小心地选择器件技术。如果选择不当会导致FIT(FailuresInTime)大幅度提高,即使基站应用也不例外。军事和航空设计人员认识到半导体器件存在单事件翻转(SingleEventUpset;SEU)效应,以及基于SRAM技术器件的相关软错误率(SoftErrorRate;SER)。SEU的发生是由于带电的亚原子粒子撞击触发器或SRAM单元,这个进入的粒子会沉积足够的电荷,导致触发器或存储器单元的状态改变,以致损坏所存储的数据。因为这种现象不会永久损坏存储单元,SEU常被称为软错误。在太空应用…     

设计和表征一个65nm抗辐射标准单元库

提出了一个基于商用65nm工艺在晶体管级设计抗辐射数字标准单元库的方法。因为当C单元的两个输入是不同的逻辑值时输出会进入高阻模式,并保持输出逻辑电平不变,而当输入端有相同的逻辑值时,C单元的功能就像一个反相器的特性。因此它有把因为辐射粒子引起的单粒子翻转（SEU）效应或单粒子传输（SET）效应所产生的毛刺滤除掉的能力。在这个标准单元库中包含了在晶体管级使用C单元设计了抗辐射的触发器,以便于芯片设计者可以使用这个库来设计具有更高抗辐射能力和减小面积、功耗和延迟的芯片。在最后为了能表征标准单元在硅片上的延迟特性,一个基于环形振荡器的芯片结构用来测量每个单元的延迟,以及验证抗辐射能力。延迟测量结果跟版图后仿真结果偏差在10％以内。     

0.18 μm SOI工艺抗辐照触发器性能研究

随着集成电路制造工艺尺寸不断减小、集成度不断提高,集成电路在太空环境应用中更容易受到单粒子辐照效应的影响,可靠性问题越发严重。特别是对高频数字电路而言,单粒子翻转效应(SEU)及单粒子瞬态扰动(SET)会导致数据软错误。虽然以往的大尺寸SOI工艺,具有很好的抗单粒子性能,但仍需要对深亚微米SOI电路进行辐照效应研究。文中通过对4种触发器链进行抗辐照设计,用0.18μm SOI工艺进行了流片验证,并与体硅CMOS工艺对比分析。1.8V电源电压条件下的触发器翻转阈值可以达到41.7MeV·cm2/mg,抗辐射性能比0.18μm体硅CMOS工艺提升了约200%。     

基于时序优先的电路容错混合加固方案

为了有效降低容忍软错误设计的硬件和时序开销,该文提出一种时序优先的电路容错混合加固方案。该方案使用两阶段加固策略,综合运用触发器替换和复制门法。第1阶段,基于时序优先的原则,在电路时序松弛的路径上使用高可靠性时空冗余触发器来加固电路;第2阶段,在时序紧张的路径使用复制门法进行加固。和传统方案相比,该方案既有效屏蔽单粒子瞬态(SET)和单粒子翻转(SEU),又减少了面积开销。ISCAS89电路在45 nm工艺下的实验表明,平均面积开销为36.84%,电路平均软错误率降低99%以上。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.