一种内含D/A转换器的铁氧体驱动器的正向设计

介绍了一种用于相控阵雷达的低功耗铁氧体驱动器和功率MOS管的电路设计，工作在9V时，其功耗小于18mW。该电路内含D／A转换器、双路比较器、触发器和组合逻辑电路。     

功率MOS管的设计与保护

对功率MOS管和功率双极管的优缺点进行比较,介绍功率MOS管的安全工作区（SOA）,重点分析了影响功率MOS管安全工作的原因以及为避免这些不利因素而采用的保护技术,对斜率控制、过温、过压、过流等保护措施进行了详细的说明。     

最新技术的PTIGBT和功率MOS的比较

最近由于降低了导通和开关损耗，PT IGBT的性能已在200～300V的额定范围超越了功率MOS管。本文比较了300V的IGBT和300V的功率MOS的所有性能。IGBT的电导调制使导通电压大幅度减少，总的开关损耗几乎与MOS一样。由于有效地控制了少子寿命，这些PT IGBT适于高频电源的应用。硬开关电路的测试表明，300V的IGBT比功率MOS的成本低，性能更好。     

一种抗辐射加固RS485驱动器的设计

RS485通信协议要求：RS485驱动器输出短路至-7~12 V时,短路电流应小于250 mA。常规短路保护电路采用高压MOS实现,由于高压MOS栅极氧化层厚度很大,无法满足抗总剂量辐射加固的要求。提出了一种新型的驱动器输出短路保护电路,该电路利用5 V低压MOS管实现,通过合理设计线路、版图,实现了良好的短路保护效果和抗总剂量辐射能力。电路采用0.8 μm SOI CMOS工艺设计实现,常规及辐照测试结果证明了设计的正确性。     

电源软启动电路MOS管失效原因分析

MOS管具有体积小、导通电阻低等优点，在大功率电源的软启动电路中被大量地使用。以某大功率电源在工作过程中发生软启动电路MOS管损坏为案例，通过开封检查，确定该MOS管为过功率损坏。首先，建立了软启动仿真电路，分析了电路启动波形，得出了MOS管过功率损坏过程；然后，通过实验验证了仿真结果的正确性，定位到外部供电电源异常导致MOS管损坏；最后，提出了规避电源软启动电路MOS管失效的思路，对于提高电源软件启动电路MOS管的质量与可靠性具有重要的意义。     

国内新闻

正赛米控为90kW工业电机驱动器、太阳能逆变器和电源应用推出MiniSKiiPDual模块用户友好的弹簧技术用于电源和控制端子以及简单、具有成本效益且无焊接单螺丝安装的电路板、散热器及模块-这些都是电力电子制造商赛米控所生产的MiniSKiiP系列产品的主要优势。MiniSKiiP主要用于工业电机驱动器、太阳能逆变器和电源。除了原先最高40kW的功率,现在有了功率高达90kW的MiniSKiiP。新的MiniSKiiPDual组合包括150A-600A/650V、150A-300A/1200V和100A-300A/1700V。这是首次     

美国国际整流器公司（IR）推出带有多种保护功能的新款600V高压集成电路

国际整流器公司（International Rectifier,简称IR）日前推出一系列新一代600V高压集成电路（HVIC）。这个600V单通道栅极驱动器系列IRS212x适用于低、中和高压马达控制应用以及不同电路拓扑．包括三相转换器、H-桥,和其它采用MOS栅极功率组件的拓扑。     

基于IR2101最大功率跟踪逆变器的设计与实现

为解决直流逆变交流的问题,有效地利用能源,让电源输出最大功率,设计了高性能的基于IR2101最大功率跟踪逆变器,并以SPMC75F2413A单片机作为主控制器.高电压、高速功率的MOSFET或IGBT驱动器IR2101采用高度集成的电平转换技术,同时上管采用外部自举电容上电,能够稳定高效地驱动MOS管.该逆变器可以实现DC/AC的转换,最大功率点的跟踪等功能.实际测试结果表明,该逆变器系统具有跟踪能力强,稳定性高,反应灵敏等特点,该逆变器不仅可应用于普通的电源逆变系统,而且可应用于光伏并网发电的逆变系统,具有广泛的市场前景.     

SKHI 22A／BH4型混合双IGBT驱动器

SKHI 22A、SKHI 22B、SKHI 21A是新一代驱动器，由可以直接安装在PCB上的混合电子元件组成。在这种驱动器中，集成了驱动、电源、误差监控和电位分离所必需的全部器件。为了使这种驱动器适用于功率模块，只需要少量的附加布线。IGBT的正向电压用集成化短路保护电路检测，当超过一定阈值电压时，保护电路就会使功率模块关断。短路或电源电压太低时，集成化误差存储器就会工作，产生一个误差信号。该驱动器与 15V的受控电源连接。输入信号电平分别是0V／15V(SKHI 22A／21A)和0V／5V(SKHI 22B)。     

600V/5A场控横向光激双向可控硅开关

SIPMOS(西门子功率MOS)工艺,除用于制造MOS管外,还可制造集双极与MOS功能为一体的器件,如场效应管控制的三端双向可控硅光激开关。该器件有两个反并联的横向闸流管,采用纵向MOS管驱动,高灵敏的光电晶体管为MOS管提供栅压。横向闸流管通过互联的指型结构得以有效地利用芯片面积。 这种光激开关器件的芯片面积为4×4mm~2。正、反向阻断电压均高于600V,2mA的发光二极管(LED)电流即可触发开关,持续电流为5A,电流传输比达2500:1     

High-voltage technology offers new solutions for interface integrated circuits

A BIMOS IC technology improving the design of interface circuits that require either high-voltage (up to 120 V) of current (up to a few amperes per output) has been developed. Both bipolar and MOS complementary components are processed together on the same chip for low- and high-voltage applications. Various BIMOS power interface circuits are now in production, e.g., a motor driver, a high-voltage plasma display driver, and a printer head driver. This paper describes the BIMOS technology and the characteristics of its components. As applications, two circuits are presented: the UEB 4732 (plasma display driver) with complementary MOS push-pull output stages (120 V), and the UAA 2081 (stepper motor driver) with power bipolar transistors (1 A per output). Both circuits have a logical part designed with low-voltage CMOS (5-12 V).     

High-voltage DIMOS driver circuit

High-voltage output driver circuits realized with double-implanted MOS (DIMOS) transistors are presented. Breakdown voltages exceed 100 V. Dynamic bootstrap techniques resulted in circuits combining low power (5 mW) and fast switching times (150 ns) at typical operating conditions of 5 V/50 V, 50 pF, and 16 kHz.     

Dynamic back bias CMOS driver for low-voltage applications

A high performance CMOS driver scheme for low-voltage applications is proposed. The threshold voltage of the MOS devices is electrically controlled in order to achieve high-speed operation during the transitions without increasing the static power dissipation. The V_TH control scheme has been applied to the pull-up section of the driver and simulations at 0.9 V and at 50 MHz have shown that the proposed driver exhibits a speed advantage of 40% during pull-up transitions over a conventional CMOS driver, without leading to a serious increase in the power dissipation     

一种混合集成DC/DC电源调制器的设计

介绍了一种混合集成DC/DC电源调制器的设计,并给出了实验结果。该电路包含延时电路、逻辑运算电路、驱动电路和输出电路,其主要功能是对输入的TTL控制信号进行逻辑运算和延时处理;通过驱动电路后,对 3.3 V、 5 V、 6 V、 12 V电源进行调制,可实现按规定时序为系统供电。     

Low-power CMOS/BiCMOS drivers and receivers for on-chipinterconnects

Novel low-voltage swing CMOS and BiCMOS driver/receiver circuits for low-power VLSI applications are proposed. Interconnect wire drivers with low output signal swing are employed. Special receivers provide single and double level conversion while minimizing the total driver/receiver transmission delay. These level converters have no DC power dissipation. At 3.3 V power supply voltage, the proposed circuits consume less power without delay penalty. The power saving is observed to be as high as 30%. At lower supplies further power and delay improvements are observed     

基于STM32的多功能LED驱动电源

目前大功率LED照明灯具的驱动电源主要使用集成电路作为电源驱动芯片,其扩展性能差、功能少。针对这些问题,作者基于STM32开发了一种多功能LED驱动电源,通过编程可以实现无级调光与自动温控散热两个扩展功能。测试结果表明：在额定电压为30V、额定电流为3.3A的负载下,输入电压从90V~264V变化时,驱动电源输出电压的波动范围为±1.5V,而输出电流波动范围为±0.11A,恒流特性较好,驱动电源的功率因数均值在0.95以上。     

Design of SCR‐Based ESD Protection Circuit for 3.3 V I/O and 20 V Power Clamp

In this paper, MOS‐triggered silicon‐controlled rectifier (SCR)–based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR‐based ESD protection circuits with floating diffusion regions for inverter and light‐emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded‐gate NMOS (ggNMOS) in the MOS‐triggered SCR‐based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P‐well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the floating diffusion region. The trigger voltage was improved by the partial insertion of a P‐body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low‐ and high‐voltage applications were designed using 0.18 µm Bipolar‐CMOS‐DMOS technology, with 100 µm width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS‐6008).     

一种16位1 GS/s电流舵型DAC的设计

设计了一种基于UMC 0.18μm CMOS工艺的16位1GS/s的电流舵型D/A转换器。该DAC采用7+4+5分段结构,1.8V/3V双电源供电,满摆幅输出电流为20mA。采用四开关结构、限幅开关驱动电路、两个cascode管的单位电流源以及两层结构的逻辑译码器,实现了优异的性能。在1GHz采样率、101.07MHz输入信号下,无杂散动态范围(SFDR)达到78.06dB。     

Low-power BiCMOS circuits for high-speed interchip communication

A universal BiCMOS low-voltage-swing transceiver (driver/receiver) with low on-chip power consumption is reported. Using a 3.3 V supply, the novel transceiver can drive/receive signals from several low-voltage-swing transceivers with termination voltages ranging from 5 V down to 2 V and frequencies well above 1 GHz. Measured results of test circuits fabricated in 0.8-μm BiCMOS technology are also presented