白色荧光粉ZnWO4:Dy3+,Eu3+的制备及发光性能

采用高温固相法合成系列以ZnWO₄基质、Dy ³⁺,Eu³⁺作为激发离子的白色荧光粉, 并通过X射线衍射(XRD)、荧光光谱对荧光粉的物相结构和发光性能进行了研究。在 387nm波长激 发下,Dy³⁺的2F₉→⁶H15/2跃迁的蓝光发射及²F₉→ 6H13/2的黄光发射最强。随着Dy³⁺的浓度 增大荧光粉ZnWO₄:Dy³⁺的色坐标由黄光到白光移动,Dy³⁺的最佳掺杂浓度 是12%,此 时荧光粉的色坐标为(0.321,0.341)。在ZnWO₄:Dy³⁺中加入Eu³⁺可以使 荧光粉的色 坐标更接近于标准白光并向暖白光区移动,当Dy³⁺的浓度为12%时,加入浓度1~8%的 Eu³⁺,其色坐标都在白光区且当其浓度等于2%时色坐标(0.346,0.339)最接近标准白光(0.33,0.33),并可观察到Dy³⁺向Eu³⁺的能量传递。     

YPO4:Dy3+,Eu3+荧光粉的水热合成及白光发射

采用水热法,合成了YPO₄:xDy³⁺,0.06Eu³⁺系列荧光粉。通过X射线衍射(XRD )、扫 描电子显微镜(SEM)、电子散射能谱(EDS)、光致发光(PL)谱和长余辉光谱,分别对样品的物 相、结构和PL进行了表征。 XRD检测表明,合成的样品属四方晶系;荧光光谱测试表明,在234nm紫外光激发下, YPO₄:xDy³⁺,0.06Eu³⁺的 发射光谱呈现Eu3+ 的⁵D₀→⁷F₁(592nm,橙光)和 ⁵D₀→ ⁷F₂(618nm,红光) 的发光峰;而在354nm的激发波长下,YPO₄:0.06Dy³⁺,0.06Eu³⁺的发射光谱 呈现Dy³⁺的4F9/2→⁶H15/2(486nm、蓝 光)和⁴F9/2→⁶H13/2(575nm、黄光)的发光 峰,以及Eu³⁺的⁵D₀→⁷F₁(592nm、 橙光)和⁵D₀→⁷F₂(619nm、红光 )的发光峰。对荧光 衰减谱的双参数拟合证实了Dy³⁺→Eu³⁺能量 传递的存在。色坐标图显示,在234nm紫外光激发下,YPO₄:0.05Dy ³⁺,0.06Eu3+ 是很好的近紫外光激发下的白色荧光粉。     

白色荧光粉Gd2(MoO4)3:Dy3+,Tm3+的制备及发光性能

采用高温固相法合成了一系列Gd₂(MoO₄)₃:D y³⁺, Tm³⁺白色荧光粉。通过XRD衍射、荧光光谱分析对荧光粉的物相结构以及发光性能进 行了研究,且通过色坐标监测样品的发 光颜色。发射光谱显示荧光粉Gd2－x(MoO₄)₃:xDy 3+在387nm激发下,Dy³⁺的²F₉→⁶H15/2跃 迁的蓝光发射及²F₉→⁶H13/2跃迁的黄光发射最强,随着Dy³⁺浓度增加 ,色坐标由白光向黄 光转移。在Gd₂(MoO₄)₃:Dy³⁺,Tm³⁺的发射光谱中,在361nm激发下,可以同时看到Dy³⁺的 黄光发射和Tm³⁺的蓝光发射,即Dy³⁺的²F9/2→⁶H13/2黄光 跃迁和Tm³⁺的¹D₂→³F₄蓝光跃 迁,因此,通过调节Dy³⁺,Tm³⁺的浓度可以使样品发出白光。当Dy³⁺浓 度为12%,Tm³⁺ 浓度为7～14%时,样品皆在白光区。当Dy³⁺,Tm³⁺浓度均为12%时,样品的色 坐标为(0.338,0.329 )最接近标准白光(0.33)。同时,在 Dy³⁺与Tm³⁺共掺的体系中,可以看到Tm³⁺向Dy³⁺的能量传递。     

Tb3＋掺杂高Lu-Gd氟氧化物玻璃的制备及其光谱性能

通过高温熔融法制备了10组Tb3＋掺杂高 Lu-Gd氟氧化物玻璃样品,测试了样品的密度、透射光谱、激发光 谱、紫外激发发射光谱、X射线激发发射光谱和Tb³⁺、Gd³⁺的荧光寿命。着重 研究了Gd₂O₃和Lu₂O₃对Tb³⁺发光的影响,Tb³⁺的浓度猝灭效应以及Gd³⁺与Tb³⁺的能量 传递。结果表明,样品的密度 很高,部分样品密度已经超过6g/cm³;Tb³⁺的浓度猝灭效 应使得350～450nm范围内的荧光强度下降, 但是使得480～650nm范围内的发光强度增强;Lu₂O₃对Tb3+ 的紫外激发荧光强度几乎没有影响,但是 对X射线激发的发光强度有较大的影响;Gd₂O₃对Tb³⁺的发光具有促进作用, 两者 之间存在着能量传递,并通过Dexter理论验证了Gd³⁺与Tb³⁺间的能量传递是无 辐射能量传递。     

K2MgSiO4:Eu3+红色荧光粉的制备与发光性能

采用高温固相反应合成了适合近紫外光-蓝光激 发的K₂MgSiO₄:Eu³⁺红色荧光粉,并对其发光特性进行了研究。X射线衍 射(XRD)测试结果表明,合成样品为纯相晶体。样品激发光谱由O2-→Eu³⁺电 荷迁 移带波长为(200～350nm)和Eu³⁺的特征激发峰(波长为350～500nm) 组成,主峰位于396nm波长处,次级峰位于466nm波长处。在396nm和466nm波长分别激发 下,样品发射峰均由Eu³⁺的⁵D₀→⁷FJ(J=0,1,2,3,4)能级跃迁产生,其中619nm波长处发射强度最大。 随着Eu³⁺掺杂浓度的增加,荧光粉的发光强度增大。在实验测定的浓度范 围内,未出现浓度猝灭现象。样品的色坐标位于红光区,且非常接近NTSC标准。样品发光强 度随温度增加出现温度猝灭现象,发 射峰位置并未出现明显红移。样品中,Eu³⁺在⁵D₀能 级上的荧光寿命约为0.535ms。     

Ag纳米颗粒对Er3+/Yb3+共掺铋锗酸盐玻璃上转换发光性能的影响

采用熔融退火法制备了Er³⁺/Yb³⁺共 掺复合银(Ag)纳米颗粒的铋锗酸盐玻璃,对玻璃样品 进行物理性质、透射电镜(TEM)图像和光谱性能测试,分析了铋锗酸盐玻璃样品中Er³⁺的上转换 发光机理。研究表明:随着退火温度的增加,Ag纳米颗粒不断析出,绿光(527nm波长 )和红光(661nm波长)发光强度都得到了较大增强,在420℃时,上转换发光强度分别为未掺 杂AgCl时的4.45和4.22倍。其上转换发光增强的原因归结于Ag 纳米颗粒表面等离子体共振(SPR)导致局域场电场增强和Ag⁰→Er³⁺的能量转移。     

新型红色荧光粉Ca0.5Sr0.5MoO4:Sm3+的制备及光学性能

为了得到发光效率较好的长波长红色荧光粉,采用 高温固相法成功地合成了适合紫外激发的红色荧光粉 Ca0.5－xSr0.5MoO₄:xSm³⁺,研究了其晶体结构和发 光性质。X射线衍射(XRD)测量结果显示,制备的样品为纯相Ca0.5Sr0.5MoO₄晶体。其激发 光谱包括一个宽带峰和一系列尖峰,通过不同波长激发的发射谱和与Ca0. 5－xSr0.5MoO₄:xEu³⁺的发射 谱比较分析得出激 发宽带为最有效激发带,归属于Mo⁶⁺－O2－的电荷迁移跃迁。在275nm的激发 下,发射峰由峰值为564nm(⁴G5/2→⁶H 5/2)、 606nm(4G5/2→⁶H7/2) 、647nm (⁴G5/2→⁶H9/2)、707nm(4G5/2→⁶H11/2)的4个峰组成,最大发射 峰位于647nm处,呈现红光 发射。Sm³⁺掺杂高于6%时Ca0.5－xSr0.5Mo O₄:xSm³⁺出现浓度猝灭,分析表明,其猝灭机 理是最邻近离子间的能量传递。同时,添加电荷补偿剂可增强材料的发射强度,以添加Na +的效果最明显。     

纳米Au增强掺Er3＋铋酸盐玻璃近红外发光特性

研究了掺Er³⁺含Au纳米颗粒铋酸盐玻璃在波 长为980nm的LD抽运下1.53μm波长处的发光 特性。测试得到表征 Au纳米颗粒存在的表面等离子体共振(SPR)峰位于565～586nm波长 之间,透射电镜(TEM)图像中观察到密集分布形状各 异的Au纳米颗粒,尺寸约为5～16nm。研究表明,随着AuCl含量增加 ,1.53μm波长处荧光强度呈现先增强后减弱 的趋势,在AuCl掺杂浓度为0.2wt%时取得最大值,为未掺杂时的4.3倍;荧光增强原因归结于Au纳米颗粒SPR引起的局域场增强以及Au 0→Er³⁺的能量转移,荧光淬灭原因归结于Er³⁺→Au⁰的能量反向转移。     

用于白光LED的KNaCa2(PO4)2:Eu2+蓝色荧光粉的发光特性

采用高温固相法合成了蓝色荧光粉KNaCa₂(PO₄)₂:Eu²⁺,利用X射线衍射(XRD)和光谱技术等表征了材料的性能。结果显示,少量Eu 2+的掺入并没有影响KNaCa₂(PO₄)₂的晶体结构。 在399nm近紫外光激发下,KNaCa₂(PO₄)₂:Eu²⁺材料发 射蓝光,发射光谱为400～600nm, 主发射峰位于471nm,对应Eu²⁺的4f^65d1→ 4f⁷跃迁发射;471nm发射峰,对应的激发光 谱为250～450nm,主激发峰位于399nm,与近紫外芯片匹配很好。 以365nm近紫外光作为 激发源时,KNaCa₂(PO₄)₂:Eu²⁺材料的发射强度约为商用蓝色荧光粉BAM:Eu 2+的85%;而以 399nm近紫外光作为激发源时,相较于BAM:Eu²⁺,KNaCa₂(P O₄)₂:Eu²⁺材料具有更强的发射强 度。此外,KNaCa₂(PO₄)₂:Eu²⁺和BAM:Eu²⁺的CIE色坐标接近,均位于蓝 色区域,色坐标分别 为(0.154,0.154)和(0.141,0.112)。研究结果 表明,KN aCa₂(PO₄)₂:Eu²⁺是一种在三基色白光LED中有应用前景的蓝色荧光粉。     

近紫外基白光LEDs用NaY(MoO4)2:Eu3+材料的发光特性

采用固相法于550℃灼烧4h,合成了Eu³⁺ 单掺杂的NaY(MoO₄)₂材料,研究了材料的 发光特性。X射线衍射(XRD)结果显示,掺杂少量杂质的材料仍为纯相的NaY(MoO₄)₂。以 393nm波长 近紫外光作为激发源时,NaY(MoO₄)₂:Eu³⁺可以发射主峰位于616nm波长的红色光,对应Eu³⁺的 ⁵D₀-⁷F₂跃迁发射。研究发现,增大Eu³⁺掺杂量 时,对应材料的发射强度会逐渐增大,但是 未发现浓度猝灭现象,通过相应的衰减曲线解释了此结果。测量不同Eu³⁺掺杂量下 , NaY(MoO₄)₂:Eu³⁺的色坐标结果显示,色坐标基本不变,位于红色区域。上述 结果表明, NaY(MoO₄)₂:Eu³⁺在白光LEDs领域有一定的应用潜力。     

Ce3+对掺Er3+碲铌锌钠玻璃光谱性质的影响

用高温熔融法制备了摩尔组分百分比为75TeO₂- 10Nb₂O₅-10ZnO-5Na₂O-0.5Er₂O₃-xCe₂O₃(x=0.00、0.25、 0.50、0.75、1.00)的碲酸盐玻璃样品。测量了玻璃样品的吸收光谱、上转换 光谱、拉曼光谱和 荧光光谱。结合Judd-Ofelt(J-O)理论计算了玻璃样品的强度参数Ω_t(t=2、4、6)、自发辐射跃迁几率A、荧光分支比β和辐射寿命 τrad,并用McCumber理论计算得到了Er³⁺的受激发射截面。比 较了玻璃样品中Er³⁺的放大器带宽 品质因子(σpeak_e×FWHM)和增 益品质因子(σpeak_e×τm),分 析了Er³⁺/Ce³⁺间能量转移(ET)机 理以及Ce³⁺对上转换发光的抑制作用。研究表明,适量Ce³⁺的引入对于掺Er ³⁺碲铌锌钠玻璃的光谱特性有一定的提高作用。     

A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium

In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.     

Optimal design of APD biasing circuit

This paper proposes a control method for avalanche photodiode(APD) reverse bias with temperature compensation and load resistance compensation. The influence of background light and load resistance on APD detection circuit is analyzed in detail. A theoretical model of temperature compensation and load resistance compensation is established,which is used for APD biasing circuit designing. It is predicted that this control method is especially suitable for LD laser range finder used on vehicles. Experimental results confirm that the design proposed in this paper can considerablely improve the performance of range finder.     

Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition

ZnS films were deposited on porous Si(PS) substrates with different porosities by pulsed laser deposition. The photolumi-nescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films,the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity,a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films,and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction,showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface,some cracks appear in ZnS films,which could be seen from scanning electron microscope images.     

Effect of different processing methods for the hole transporting layer on the performance of double layer organic light-emitting devices

The hole transporting layer （HTL） of organic light-emitting device （OLED） was processed by vacuum deposition and spin coating method, respectively, where N,N＇-biphenyl-N, N＇-bis（3-methylphenyl）- 1, l＇-biphenyl-4,4＇ -diamine （TPD） and poly （vinylcarbazole） （PVK） acted as the hole-transport materials. Tris-（8-hydroxyquinoline）- aluminum （Alq3） was utilized as both the light-emitting layer and the electron transporting layer. The basic structure of the device cell was： indium-tin-oxide （1TO）/PVK ： TPD/Alq3/Mg：Ag. The electroluminescent （EL） characteristics of devices were characterized. The results showed that the peak of EL spectra was located at 530 nm, which conformed to the characterizing spectrum of Alq3. Compared with using vacuum deposition method, the green emission with a maximum luminance up to 26135 cd/m2 could be achieved at a drive voltage of 15 V by selecting proper solvent using spin-coating technique, and its maximum lumi nance efficiency was 2.56 lm/W at a drive voltage of 5.5 V.     

Visible blind p-π-n-n ultraviolet photodetectors based on 4H-SiC homoepilayers

p⁺-π-n⁻-n⁺ ultraviolet photodetectors based on 4H-SiC homoepilayers have been presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetectors was 300×300 μm². The dark and illuminated I-V characteristics had been measured at reverse biases form 0 to 20 V at room temperature, and the illuminated current was at least two orders of magnitude than that of dark current below 13 V bias. The peak value zones of the photoresponse were located at 280-310 nm at different reverse biases, and the peak value located at 300 nm was 100 times greater than the cut-off response value in 380 nm at a bias of 10 V, which showed the device had good visible blind performance. A small red-shift about 5 nm on the peak responsivity occurred when reverse bias increased from 5 to 15 V.     

Ablation pressure of the shock wave generated by laser interaction with solid targets

The time evolution process of the plasma generated by laser pulse interaction with solid target in air is observed by optical shadowgraph imaging technique. The ablation pressure of the shock wave generated with the plasma is calculated analytically. It is found that plasma expansion in perpendicular and lateral directions are both proportional to t2/5 with t as delay time, and the ablation pressure reaches 10~8 Pa.     

Er3+、Eu3+双掺杂LaOF荧光粉的光学性能研究及防伪应用

有机发光材料可能对人体或环境造成影响,除此之外还有生产成本高、发光易淬灭、发光强度与颜色不易于控制的缺点,因此探索性能优越的稀土发光材料并寻找其应用价值是具有重要意义的。本文基于水热辅助固相法制备出Er³⁺、Eu³⁺离子共掺杂LaOF荧光粉,通过X射线衍射仪(X-ray diffractometer, XRD)、扫描电镜(scanning electron microscope, SEM)和荧光分析仪对不同Er³⁺掺杂浓度下的LaOF∶Eu³⁺荧光粉体的相组成、粒径尺寸、形貌及荧光光谱进行表征与分析。结果表明：在900℃的温度下煅烧,物相由前驱体LaF₃转变为四方相LaOF,且随着Er³⁺掺杂浓度的升高,在365 nm与393 nm波长激发下均呈现出多色可调谐的发光特性,其中365 nm激发下呈现自橙色光向黄色光的转变,而在393 nm光辐射下则由橙色光向品红色光过渡。将Er³⁺、Eu³⁺共掺杂LaOF荧光粉制成...     

Effects of Ge/Ge preamorphization combined with sub-keV boron implantation in pMOSFET fabrication

The reduction of transient enhanced diffusion (TED) and suppression of short-channel effect (SCE) are very critical for the formation of ultra shallow junctions required for deep sub-micron devices. This article reports the nanoscale gate length of p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) technology using ⁷²Ge/⁷⁴Ge germanium preamorphization implantation (Ge PAI) upon the (1 0 0)-oriented silicon substrates. It is demonstrated that the channeling can be eliminated by the formation of a Ge-implantation induced thin amorphous layer near the surface prior to boron implantation. Optimizing the amorphous layer thickness by controlling a high ⁷²Ge/⁷⁴Ge ratio, the device performance of pMOSFETs can be enhanced. In addition, the optimum conditions of Ge PAI would help the confinement of boron ions to avoid the channeling phenomenon. It is also found that the thin Ge PAI amorphous layer formed by a low ⁷²Ge/⁷⁴Ge ratio would cause the degradation of threshold voltage (V_th) roll-off characteristics, I_on/I_off ratio and the fluctuation of 62.14% in gain factor, as compared to that formed by a high ⁷²Ge/⁷⁴Ge ratio. It is attributed to a thinner Ge amorphous layer that has a weak ability to suppress the channeling tail of boron, as compared to a thicker Ge amorphous layer at the same implanted doses and acceleration energies among various ⁷²Ge/⁷⁴Ge ratios.     

A robust method to measure residual stress in micro-structure

An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectros- copy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics.