衬底电极对丝网印刷CNT阴极场发射性能的影响

通过丝网印刷技术,将碳纳米管(carbon nanotube,CNT)浆料直接转移到CrCuCr薄膜衬底电极、掺Sn的In_2O_3(indium tin oxides,ITO)透明导电薄膜衬底电极和Ag浆导电厚膜衬底电极上,高温烧结后得到CNT阴极,并对CNT阴极进行表面形貌和场发射性能的研究.结果表明,不同衬底电极对CNT阴极场发射性能的影响不一样,CrCuCr薄膜衬底电极CNT阴极、ITO透明导电薄膜衬底电极CNT阴极及Ag浆厚膜导电衬底电极CNT阴极场发射的开启电场分别为0.99、2.05和2.46V/μm;当电场为3.0V/μm时,它们的亮度分别为2472、1889、587cd/m~2.CrCuCr薄膜衬底电极CNT阴极的场发射性能最优,ITO透明导电薄膜衬底电极CNT阴极次之,Ag浆厚膜导电衬底电极CNT阴极最差,并根据金属-半导体理论模型分析了原因.     

碳纳米管场发射特性的研究

将ＣＶＤ方法制成的碳给米管沉积在钼针尖上，测试了这种材料的场发射特性。结果表明这种材料可作为一种新型高效的场发体。同时还将其与纯钼针在场发射方面进行了比较。     

碳纳米管场发射特性的研究

将CVD方法制成的碳纳米管沉积在钼针尖上 ,测试了这种材料的场发射特性。结果表明这种材料可作为一种新型高效的场发射体。同时还将其与纯钼针在场发射方面进行了比较     

利用场发射显微镜研究单壁碳纳米管的场发射特性

利用场发射显微镜研究了单壁碳纳米管（SWCNTs)的场发射特性。由于实验中所用的SWCNTs的长度基本一致，因此能同时观察到多根SWCNTs的场发射像。SWCNTs的场发射像随着热处理温度的升高而变化，直至热处理温度过高而塌缩。在一定的实验条件下，观察到了具有精细结构的单根碳纳米管顶端“帽子”的场发射像。电流－电压（I－U）曲线分析表明，SWCNTs的电流来源于场发射。     

电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究

基于电泳和半导体工艺,制备了图形化的碳纳米管场发射阴极。用较高的电场激活碳纳米管薄膜,使得碳纳米管的场发射特性有了很大的改善,讨论了这一激活过程的物理机制。研究表明,这一激活过程可能的物理机制一方面是由于碳纳米管薄膜表面形貌发生了变化,增大了碳纳米管的场增强因子;另一方面是由于碳纳米管表面吸附的气体脱附,降低了碳纳米管的表面功函数。电场激活处理后,碳纳米管薄膜的开启电场为2.1 V/μm,应用电场为6 V/μm时,电流密度达到1.19mA/cm2。该图形化的碳纳米管场发射阴极可以应用到高分辨率场发射显示器。     

利用场发射显微镜研究单壁碳纳米管的场发射特性

利用场发射显微镜研究了单壁碳纳米管(SWCNTs)的场发射特性.由于实验中所用的SWCNTs的长度基本一致,因此能同时观察到多根SWCNTs的场发射像.SWCNTs的场发射像随着热处理温度的升高而变化,直至热处理温度过高而塌缩.在一定的实验条件下,观察到了具有精细结构的单根碳纳米管顶端"帽子"的场发射像.电流-电压(I-U)曲线分析表明,SWCNTs的电流来源于场发射.     

碳纳米管的薄膜场发射

薄膜场发射特性是碳纳米管(CNT)研究的重要课题之一，它直接关系到CNT场发射阴极在将来的实际应用。本就CNT的场发射做一综合评述，主要涉及性能指标、结构模型、图形化方法和工艺等。     

有机溶剂高压气流法改善碳纳米管阴极场发射特性

针对丝网印刷碳纳米管阴极,提出有机溶剂高压气流法进行表面后处理,有效改善碳纳米管阴极场发射特性.利用表面轮廓仪、扫描电子显微镜及高分辨透射电子显微镜表征有机溶剂高压法处理前后CNT阴极表面形貌变化,并对处理前后CNT阴极进行场发射特性测试.结果表明,有机溶剂高压法处理后CNT阴极表面整洁无包覆,开启电场下降,场发射电流密度大幅度提升,发射点密度明显增大,均匀性提高,处理前后场增强因子比值为1:2.8.     

尖锐端头碳纳米管的制备与场发射特性

采用氢电弧法制备了尖锐端头的碳纳米管,获得了具有三种特殊形貌的尖端,即锥形、颈缩形和铅笔状尖端.该特殊彤貌的彤成可归因于在原料中加入硅粉进而形成的结构缺陷.研究了所得碳纳米管的场发射特性,发现其阈值电场较低,仅为3.75V/mm;场发射电流密度可高达～1.6×105A/cm2;且场发射稳定性好.以上优异的场发射性能归结于该碳纳米管具有良好的结构完整性和独特的尖端结构特征.

Abstract：

Carbon nanotubes (CNTs)with sharp tips were synthesized by a hydrogen arc discharge method. Three unusual morphologies,i.e. ,a cone-shaped tip,a suddenly-shrinking tip,and a pencil point-like tip were observed. These novel tip structures are considered to be related to the addition of a small amount of silicon powder in the raw material,which may introduce structural defects in the CNTs. The field emission properly of the sharp-tip CNTs was investigated,and a low threshold electric field of 3.75 V/m,a high field emission current density of ～1.6× 105 A/cm2,and a good emission stability were demonstrated. The superior field emission performance of the CNTs can be attributed to their good crystallinity and unique tip structures.     

碳纳米管场发射电子源

从实验和理论上研究单根碳纳米管(CNT)场发射电子源的稳定问题.利用透射电镜/扫描探针显微镜(TEM/SPM)和场发射显微镜/场离子显微镜(FEM/FIM)对CNTs的场发射特性进行了实验研究.同时从密度泛函理论出发,利用相关程序模拟计算了吸附对单壁碳纳米管(SWNTs)场发射的影响.发现SWNTs荷电体系的总能量与荷电电荷数量关系具有抛物线形式,先减小,达到最小值,之后增加.通常荷4个电子时达到最小值,即体系处于最稳定状态.表明SWNTs有很大的电负性,是容易发生凝聚和吸附分子的根源.进而计算了对氢、氧和水的吸附特性,讨论了吸附对场发射的影响.这些结果对CNTs的场发射特性和作为新型电子源的应用都是有重要意义的.     

表面覆铪改善碳纳米管膜发射性能

研究了表面沉积铪膜并进行后处理对碳纳米管膜场电子发射性能的影响.研究结果表明在适当的退火温度下碳纳米管表面形成了碳化铪,并显著提高了碳纳米管的发射电流密度、发射均匀性和发射稳定性.我们认为碳纳米管表面发射性能的提高归功于表面碳化铪膜良好的导电性、化学惰性和低逸出功.     

Improved field emission properties of thiolated multi-wall carbon nanotubes on a flexible carbon cloth substrate

In this paper we report the observation of enhanced field emission properties from thiolated multi-wall carbon nanotubes (MWCNTs) produced by a simple and effective two-step chemical surface modification technique. This technique implements carboxylation and thiolation on the MWCNTs synthesized by microwave plasma chemical vapor deposition (MPCVD) on the flexible carbon cloth substrate. The resulting thiolated MWCNTs were found to have a very low threshold field value of 1.25?V?μm(-1) and a rather high field enhancement factor of 1.93 × 10(4), which are crucial for applications in versatile vacuum microelectronics.     

Effect of patterned and aligned carbon nanotubes on field emission properties

The field emission (FE) properties of carbon nanotubes (CNTs) films with different morphologies were simulated and examined. Based on the FE mechanism of aligned CNTs’ emitter the theoretical analysis exhibited the following relations: the FE enhancement factor with the distance between the emitters, the electric field with work function, and the work function with FE enhancement factor. Using the structure-induced CNTs growing method and theoretical results the direction of aligned CNTs could be controlled and the special morphology with different aligned CNTs’ film could be fabricated. Comparing to the experimental results (the medium density and patterned CNTs’ emitters) with the theoretically calculating results the I-V curves had the same trend with only 0.05 mA deviation. Based on the better experimental methods and means the accurate of formula could be further improved by modified the FE properties (Φ, β).     

Improved field emission properties of carbon nanotubes by dual layer deposition

In this paper, we tried to increase the current density of carbon nanotubes (CNTs) by depositing double layer of CNTs instead of single layer. Both the layers of CNTs are deposited by the low pressure chemical vapour deposition technique on silicon substrate with Fe catalyst. Scanning electron microscopic images show the surface morphology of single and double layer of CNTs. Dual layer deposition of CNTs is a very simple and easy method to increase the current density of CNTs based field emitters than other conventional methods. Excellent field emission properties of double layer of CNTs are exhibited with large field enhancement factor and low turn-on voltage as compared to those for single layer of CNTs. High current density of CNTs is required for field-emission-based display devices associated with field enhancement factor and number of emitting electrons. Therefore, we may say that dual layer deposition of CNTs can be utilised as an alternative approach to improve the current density for field emitters. Stability measurement of the samples was also performed for 3 h (180 min) with current at constant applied voltage, and it was found that the stability of dual layer of CNTs is remarkable than that of single layer of CNTs.     

一种基于CVD法的纳米碳管微观分析及场致发射特性的研究

将化学气相沉积法（CVD）制备的纳米碳管提纯后，用透射电镜（TEM）观测了它的微观结构，通过实验对纳米碳管在不同温度下生长的结构特性进行了分析比较，得出了纳米碳管生长的最佳温度为750℃；并对纳米碳管粉体的拉曼（Raman）光谱进行了分析，得到了与透射电镜观测相一致的结论；最后测试了纳米碳管的场致发射特性．     

Enhancement of field emission characteristics of carbon nanotubes on oxidation

Vertically aligned multi-walled carbon nanotubes (CNTs) were grown on p-type silicon wafer using thermal chemical vapor deposition process and subsequently treated with oxygen plasma for oxidation. It was observed that the electron field emission (EFE) characteristics are enhanced. It showed that the turn-on electric field (E(TOE)) of CNTs decreased from 0.67 (untreated) to 0.26 V/microm (oxygen treated). Raman spectra showed that the numbers of defects are increased, which are generated by oxygen-treatment, and absorbed molecules on the CNTs are responsible for the enhancement of EFE. Scanning electron microscopy and Transmission electron microscopy images were used to identify the quality and physical changes of the nanotube morphology and surfaces; revealing the evidence of enhancement in the field emission properties after oxygen-plasma treatment.     

Electrical conductivity and field emission characteristics of hot-pressed sintered carbon nanotubes

A soft sinter of pure carbon nanotubes was fabricated by hot-pressing under the conditions of 2273K/25MPa/Ar/1h. Four-probe resistance measurements showed that the resistivity of the sinter was about (2∼3) × 10⁻⁴ Ω·cm. The temperature dependence of the electrical resistance was also studied. Field emission properties of the sinter indicate that it is a good candidate for practical field emission applications.     

碳纳米管场发射阴极的制备及其场发射特性

采用电泳法将碳纳米管组装到电化学淀积的银台阵列上作为场发射阴极并研究了它的场发射特性.场发射特性测试结果表明:该阴极具有优异的场发射特性,开启电场为2.8V/μm,在应用电场为5.5V/μm时,发射电流密度达到1.7mA/cm2.具有优异的发射性能的原因可以归结到银台的边缘和银台类山状的表面增强了碳纳米管的场致电子发射.该阴极制备工艺简单、发射特性优异,且容易实现大面积制备,可以应用到大面积场发射显示器件中.     

Fabrication of carbon nanotubes field emission cathode by composite plating

Carbon nanotubes (CNTs) have high aspect ratio and have great potential to be applied as the field emission cathode because of its large field enhancement factor. In this work, a high performance carbon nanotube field emission cathode (CNTFC) was fabricated by using a composite plating method. The CNTs were purified by acid solutions and then dispersed in electrobath with nickel ions at temperatures of 60, 70, or 80 degrees C for the electroless plating process on glass substrate. The resulting CNT-Ni composite film has strong adhesion on the glass substrate. The degree of graphitization and the microstructure of the CNTFCs were studied by Raman spectroscopy and scanning electron microscopy. The field emission properties of the CNTFCs show a low turn-on electric field E(on) of about 1.2 V/microm, and a low threshold electric field E(th) of about 1.9 V/microm. Such a composite plating method could be applied to the fabrication of large area CNT field-emission displays.     

Field emission of carbon nanotubes grown on nickel substrate

Carbon nanotubes (CNTs) have been synthesized directly on the electrically conducting nickel substrate without additional catalyst. Field emission properties of the as-prepared sample were characterized using parallel plate diode configurations. It was observed that the field emission qualitatively follows the conventional Fowler–Nordheim (F–N) theory from the straight line of ln(I/V²) versus 1/V plot at the high applied field region. The uniformity and stability of the electron emission have also been examined. The low electron turn-on field (E_to) and high emission current density indicates the potential applications of this new CNT-based emitter.