锗富集物中硫、砷及二氧化硅的控制

针对从高硫、砷、二氧化硅等劣质原料中提取锗的过程中出现的质量问题，进行了除硫、砷及硅的研究。结果表明，采用高温除硫、氧化除砷及二段除硅效果显著。从而确保了锗富集物的质量达标。     

锗富集物中硫、砷及二氧化硅的控制

对高硫、砷、二氧化硅等劣质原料提取锗进行了除硫、砷及硅的研究。结果表明,采用高温除硫、氧化除砷及二段除硅效果显著。从而确保了锗富集物的质量达标。     

缺氧磁化焙烧技术用于处理硫砷金精矿

介绍了缺氧磁化焙烧脱砷的原理及工艺,阐述了处理硫砷金精矿时各种除砷方法及技术指标。     

株冶从铟锗置换渣中提取锗的技术进步

介绍了株冶近几年来从湿法炼锌的铟锗置换中提取锗的技术进步。重点介绍了对锗萃取剂中Ｐ２０４与煤油的最佳配比和高温除硫的研究     

钴溶液硫化沉淀法除砷的热力学研究

进行了钴溶液硫化沉淀法除砷的热力学研究.研究了钴溶液中砷的各种配合物含量的变化,绘制了25℃时As-S-H2O系中含砷离子随pH值及硫用量[S]/[As]变化的分布曲线,考察了工艺参数对除砷的影响.研究表明：pH值和硫化剂的用量对溶液残砷量有重要影响,控制硫加入量能够使溶液中的含砷化合物较彻底地形成As2S3沉淀.     

硫次精矿除硫降砷活化剂试验研究

用武汉理工大学活化剂与硫酸铜对某硫次精矿进行除硫降砷活化剂对比试验研究。在使用水玻璃为脉石抑制剂、武汉理工大学活化剂为硫砷活化剂、丁基黄药为捕收剂、松醇油为起泡剂的条件下开展闭路试验，得到的尾矿含硫0.517%、硫率达到96.40%，含砷0.28%、脱砷率达91.69%；与使用硫酸铜相比硫含量低了0.127百分点、脱硫率高了0.91百分点，砷含量低了0.248百分点、脱砷率高了5.88百分点。试验结果表明，使用武汉理工大学活化剂能得到更好的脱硫降砷指标。     

中和沉淀法除锗的研究

本文在锌冶炼浸出过程中采用中和沉淀法处理某厂高锗锌焙砂重点考察了浸出液Ｆｅ／Ｇｅ摩耳比，温度及时间对除锗影响，随着Ｆｅ／Ｇｅ摩尔比的增加，随着温度的增加，上清液中锗的浓度急剧增大，时间对除锗影响不大。     

高铜粗锑火法精炼除铜研究

采用熔析———加硫除铜两段工艺研究了综合回收得到的高铜粗锑火法精炼除铜的反应机理 ,并确定了除铜的最佳条件。在略高于锑熔点温度 (6 5 0℃ )下 ,熔析可以除去粗锑中 90 %以上的铜 ,铜与砷形成Cu3 As、Cu5As2 化合物进入渣相 ,粗锑含砷量越高 ,熔析效果越好。加硫除铜反应由生锑与锑液间的扩散过程控制 ,通过改进加硫方式 ,能除去熔析后残余铜的 75 %。通过两段除铜 ,锑中铜含量降至 0 0 4 %。     

株冶锌浸出Ⅰ系统除锗的生产实践及措施

论述了湿法炼锌中锗对电解沉积的影响，锗在溶出时的行为，同时对株冶锌浸出Ⅰ系统除锗的影响因素、生产实践作了一定总结、探讨，提出了强化除锗的措施。     

含镓锗硫酸盐溶液中砷铁的高效脱除

砷和铁是湿法炼锌系统回收镓、锗工艺中主要的杂质元素,萃取分离工艺可实现砷铁的高效脱除,但得到的反萃液为高砷铁溶液,且含有少量镓、锗。为实现镓、锗的高效回收,采用中和沉淀法实现砷、铁与镓、锗的分离,考察沉淀终点pH、反应温度、反应时间、搅拌速度等参数对各金属离子沉淀率的影响。结果表明,在沉淀终点pH=2.5、反应温度25 ℃、反应时间1 h、搅拌速度240 r/min的最优条件下,铁和砷的脱除率分别为92.80%、98.13%,镓、锗的损失率分别为45.61%、7.35%。中和渣中损失的镓、锗可用弱酸溶液洗涤,酸洗液与中和后液共同返回到萃取系统回收镓和锗,提高综合回收过程中镓和锗的直收率。     

Thermodynamical Evaluation on Magnetocaloric Effect of Magnetic Refrigerating Materials Near Room Temperature

The relationship between isothermal magnetic entropy change △S and adiabatic temperature change △Tad was deduced according to the principles of thermodynamics. The MCE and the engineering application were discussed for Gd and several new kinds of magnetic refrigerating materials near room temperature, Gd5Si2Ge2, MnFeP0.45As0.55 and LaFe11.2Co0.7Si1.1. Isothermal entropy change is proportional to adiabatic temperature change with a factor of T/C (T is temperature, C is heat capacity). When the comparison of magnetacoloric effect is made for two different materials, we should consider isothermal entropy change as well as adiabatic temperature change.     

采用造渣酸洗法去除硅中硼和磷

对目前硅中硼、磷去除技术进行了综述，并针对生产高纯硅过程中硼、磷难除去的问题，提出采用熔炼造渣一酸洗的新工艺流程去除硼、磷。结果表明：通过熔炼造渣一酸洗处理之后，硼的含量可降至0．5μg/g以内，磷的含量可降至1．2／μg／g。该工艺除杂效果显著、流程简单、成本低、易实现产业化；可有效地处理硼、磷含量高的硅料，且除杂效果显著。     

Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.     

Validation of predicted precipitate compositions in Al-Si-Ge

Aged alloys of Al-0.5Si-0.5Ge (at. pct) contain diamond-cubic-A4 precipitates in a dispersion that is much finer than is found in alloys with Si or Ge alone. To help understand this aging behavior, the present work was undertaken to determine alloy composition as a function of aging temperature. The composition was estimated theoretically using a CALPHAD approach, and measured experimentally with energy-dispersive spectroscopy (EDS) in a high-resolution electron microscope. Theory and experiment are in reasonable agreement. As the aging temperature rises, the precipitates become enriched in Si, changing from 50 at. pct in the low-temperature limit to about 80 at. pct Si as the temperature approaches 433 °C, the high-temperature limit of the precipitate field.     

钼酸盐除硅技术在超高纯氧化钇生产工艺中的应用

介绍了采用钼酸盐／工业混合醇萃取法从超高纯YCl3溶液中除去微量硅的方法，并对影响萃取除硅效果的主要工艺因素进行了讨论。     

气态源分子束外延生长GexSi1-x/Si异质结合金

采用气态源分子束外延法成功地生长了ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金材料，所使用的气体分别是乙硅烷和锗烷。高能电子衍射被用于原位监控生长层的表面重构状态。在一定的生长温度下，ＧｅｘＳｉ１－ｘ合金组分ｘ取决于锗烷和乙硅烷的流量比。外延层的表面形貌与锗组分的大小、生长层的厚度及生长温度有关。结果表明，较大的锗组分和较高的生长温度利于由二维模式向三维模式转变的外延生长。     

ICP-AES Determination of Germanium in GdSiGe Series Alloys as Magnetic Refrigeration Material

The ICP-AES method for the determination of Ge in GdSiGe series alloys was studied.As the three main elements in the alloys,Gd,Si,and Ge differ greatly from each other in chemical properties,it was difficult to pretreat the sample.Two decomposition methods were compared,and a mixture of HNO3＋HF was used to decompose the sample and the effect of the HF amount on the sample decomposition was examined.The adsorption effect of GdF3 on Ge was discussed.Three GdSiGe series alloy samples were analyzed,and the RSDs of this method were in the range of 0.85%～2.66%.     

Composition dependence of ductility in boron-doped,nickel-base L12 alloys

The effect of boron doping on the ductility and fracture morphology of the Ni₃X (X = Al, Ga, Si, Ge) system has been examined. For the boron-doped binary alloys, the ductility varies as Ni₃Al ~ Ni₃Ga Ni₃SiNi₃Ge. The boron-doped ternary alloys follow the same trend of decreasing ductility with increasing Si and Ge content. The data is consistent with both the valency/size effect and electronegativity models for grain boundary cohesive strength.     

MnP_(1-x)M_x系列合金的磁热效应

研究了1∶1型MnP基系列合金MnP1-xMx(M=Si,Sb,Ge,Zn,Sn)(x=0,0.1)的结构及其磁热效应。室温X射线衍射表明该系列合金的主相结构均为正交MnP结构,空间群为Pnma。在用Ge,Sb,Zn,Sn作为替代元素的合金中存在少量第二相Mn5.64P3。磁性测量表明该系列合金MnP1-xMx(M=Si,Sb,Ge,Zn,Sn)(x=0,0.1)的存在由铁磁-顺磁的二级相变。其居里温度Tc分别为286,295,294,295,295K。通过磁化曲线计算了MnP1-xMx(M=Si,Sb,Ge,Zn,Sn)(x=0,0.1)合金的最大等温磁熵变-ΔSm,均在0.7～1.3J.kg-.1K-1之间。