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1.
采用溶胶 -凝胶 (Sol- Gel)技术 ,以硝酸铋、硝酸镧和钛酸丁酯为原料 ,制备了掺镧钛酸铋 (Bi3.6 ,L a0 .4)Ti3O1 2 (简记为 BL T) )粉体。利用 DTA、XRD以及激光光散射粒度分析等手段分析了粉体的固相反应、结构和颗粒度。结果表明 ,BL T初始粉体在 730°C左右发生固相反应 ,生成 BL T颗粒 ;730°C以下烧结的粉体为含立方 (Bi,L a) 1 2 Ti O2 0 相和正交 (Bi3.6 ,L a0 .4) Ti3O1 2 相的混合物 ,平均颗粒度为 6 0 nm左右 ;730°C以上烧结的粉体为完全正交结构的 BL T多晶颗粒体 ,平均颗粒度约为 5 0 0 nm;利用 Sol- Gel技术 ,可以制备纳米级、分散良好、分布一致的BL T粉体 ,这对 BL T新型压电陶瓷的制备具有重要意义 相似文献
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(Bi4-x,Lax)Ti3O12铁电陶瓷性能研究 总被引:2,自引:0,他引:2
采用溶胶-凝胶(Sol-Gel)技术制备了(Bi4-x,Lax)Ti3O12(BLT)干凝胶粉体,并用此粉体制备了陶瓷。利用XRD、SEM等手段分析表征了陶瓷的结构、表面形貌及介电性能。结果表明,采用本文工艺技术制备的陶瓷为类钙钛矿结构,表面致密,陶瓷的极化场强约为4.5kV/mm;BLT陶瓷介电性能为:介电常数ε=425(1kHz),介电损耗tanδ=0.05(1kHz)。掺杂量的研究表明,当x≥0.4时,La的引入对介电常数和介电损耗有较大的影响,即使介电常数升高,介电损耗降低。 相似文献
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以Bi(NO3)3·5H2O、TiCl4和La(NO3)3·6H2O为原料,KOH为矿化剂,采用微波水热法合成了镧掺杂钛酸铋(Bi4Ti3O12)粉体.借助XRD、SEM和EDS对粉体的组成、形貌作了分析.当确定微波水热釜的填充比为30%或40%,将前驱物在200℃反应110 min,可得到单一组成的镧掺杂Bi4Ti3O12粉体;当填充比减小为20%,而其他条件不变,只得到Bi4Ti3O12粉体.SEM结果表明,镧掺杂Bi4Ti3O12的形貌为纳米晶须状,而Bi4 Ti3O12为板片状结构.EDS分析结果表明,镧掺杂Bi4Ti3O12的化学组成为B13.5La0.5 Ti3O12. 相似文献
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以Bi(NO3)3·5H2O、TiCl4和La(NO3)3·6H2O为原料,KOH为矿化剂,采用微波水热法合成了镧掺杂钛酸铋(Bi4Ti3O12)粉体.借助XRD、SEM和EDS对粉体的组成、形貌作了分析.当确定微波水热釜的填充比为30%或40%,将前驱物在200℃反应110 min,可得到单一组成的镧掺杂Bi4Ti3O12粉体;当填充比减小为20%,而其他条件不变,只得到Bi4Ti3O12粉体.SEM结果表明,镧掺杂Bi4Ti3O12的形貌为纳米晶须状,而Bi4 Ti3O12为板片状结构.EDS分析结果表明,镧掺杂Bi4Ti3O12的化学组成为B13.5La0.5 Ti3O12. 相似文献
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采用固相烧结法制备了不同掺La量、不同烧结工艺的铋层化合物 Bi4-xLaxTi3O12(x=0,0.25,0.5,0.75,1)介电陶瓷。利用宽频LCR数字电桥和XRD、 SEM分析了Bi4-xLaxTi3O12介电陶瓷的晶相和微观结构对其介电性能的影响。研究表明,1050℃烧结温度保温4h的Bi3.5La0.5Ti3O12介电陶瓷,致密性好、晶粒均匀、具有良好的综合介电性能。 相似文献
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Bi2O3过量对熔盐法制备Bi4Ti3O12粉体的影响 总被引:1,自引:0,他引:1
以NaCl-KCl熔盐法制备了各向异性的Bi4Ti3O12粉体,研究了w(Bi2O3过量)对粉体的影响,优化了制备Bi4Ti3O12粉体的工艺参数。结果表明:w(Bi2O3过量)为7.5%,1100℃烧结2h所得到的Bi4Ti3O12粉体微观形貌最佳,并探讨了Bi4Ti3O12粉体在熔盐中的生长机理。 相似文献
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以二氧化钛(TiO2)和氢氧化钠(NaOH)为原料,经水热反应成功合成钛酸钠(Na2Ti3O7)晶体纤维。以合成的钛酸钠和五水硝酸铋(Bi(NO3)3·5H2O)为原料,NaOH为矿化剂,进行二次水热反应制备钛酸铋钠(Na0.5Bi0.5TiO3)粉体。通过X线衍射仪(XRD)和扫描电子显微镜(SEM)对反应制备的粉体进行物相分析,结果表明,通过二步水热反应,可制备出颗粒尺寸均匀的Na0.5Bi0.5TiO3聚集球。 相似文献
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采用柠檬酸盐法合成了钙钛矿相的Na0.5Bi0.5TiO3粉体,利用TG-DTA、XRD、SEM及激光粒度仪对Na0.5Bi0.5TiO3粉体进行了分析表征,讨论了前驱体溶液pH值对合成粉体的影响。结果表明,当前驱体溶液pH=8.5,柠檬酸与金属离子摩尔比r(C/Mn+)=1.25,水浴温度为80℃,煅烧温度为600℃时,所制备出的Na0.5Bi0.5TiO3晶体呈球形,其颗粒细小,粒径为100~200 nm。相同条件下,当pH=2.5时产物主要是富含Na、Ti、O的棒状物质。pH=6.5时所得粉体主要是Na0.5Bi0.5TiO3相,粉体颗粒呈球状,粒径为500~600 nm,其中存在少量的块状颗粒,粒径分布不均匀。pH=10.5时产物中含有较多Bi3Ti4O12杂相,粒径较大。 相似文献
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《Microelectronics Journal》1992,23(8):665-669
The high-Tc superconducting material YBa2 Cu3 Oy, well known as a 1–2–3 compound, shows other very interesting properties. One of them is very strong conductivity-oxygen content dependence. On the basis of our previous measurements, an investigation of dilatation synthesis, X-ray diffraction (XRD) analysis and conductivity measurements were performed. The results on quenched and slowly cooled samples show a phase transition region and an obvious interdependence between conductivity, unit cell volume and oxygen content. 相似文献
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The impact of various rapid thermal annealing used during the integration on the La2O3/HfO2 and HfO2/La2O3 stacks deposited by Atomic Layer deposition was analyzed. The consequences of lanthanum localization in such stacks on the evolution of the films during the rapid thermal annealing are investigated in term of morphology, crystalline structure, silicate formation and film homogeneity as a function of the depth. It appeared that the La2O3 location has an impact on the temperature of the quadratic phase formation which could be linked to the formation of SiOHfLa silicate and the resistance of the films to dissolution in HF 0.05 wt%. 相似文献
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Takeyasu Saito Yukihiro Shimogaki Katsuro Sugawara Shinji Nagata Hiroshi Komiyama 《Microelectronic Engineering》2006,83(10):1994-2000
This paper describes reaction kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2, focusing on the effect of added H2, SiH4, and Si2H6 as an active reaction initiator. Our studies indicate that the temperature at which film formation is extinguished, Tex, can be lowered by introducing H2 instead of the standard Ar carrier gas. For a SiH2Cl2/WF6 pressure ratio of 20, H2 addition changed the deposition mode from selective W deposition to blanket WSix deposition. The added H2 also improved the step-coverage profile for substrate temperatures below 600 °C. Measured step coverage profiles indicate that the activation energy of deposition species was 147 kJ/mol. Adding either SiH4 or Si2H6 can assist the film-forming reactions to achieve acceptable Si/W atomic composition ratios. Under these conditions, the residual fluorine concentration remained at acceptably low levels that are typical of conventional WF6/SiH2Cl2 CVD processes. 相似文献
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用XeF激光的351毫米微来激励Na_2(x~1Σ_g~ )得到c~1Π_u→2~1Σ_g~ 跃迁范围内三条受激发射谱线及b~3Σ_g~ →x~3Σ_u~ 830毫微米至900毫微米准连续发射谱。文中讨论了这两个跃迁的关联并估计了产生激光振荡的可能性。 相似文献
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以钛酸丁酯和乙酸钡为起始原料,采用液相法制备了纳米钛酸钡。研究了纳米钛酸钡和碳酸锰的掺杂对普通亚微米级钛酸钡的形貌及介电性能的影响。结果表明,在普通钛酸钡中加入一定量的纳米钛酸钡可以促进晶粒的生长,同时提高陶瓷的介电常数。而在普通钛酸钡中加入一定量的碳酸锰则可以抑制晶粒的生长。但同时添加碳酸锰和纳米钛酸钡,碳酸锰对晶粒生长的抑制作用将居于主导地位,并且此时钛酸钡陶瓷的介电常数温度特性曲线与单独添加锰离子时的走势基本相同,室温附近的介电常数峰将由于钛酸钡陶瓷的细晶效应而弥散。 相似文献
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Horng Nan Chern Chung Len Lee Tan Fu Lei 《Electron Device Letters, IEEE》1993,14(3):115-117
It is reported for that H2 plasma followed by O2 plasma is more effective for passivating grain boundary states in polysilicon thin film. Polysilicon thin-film transistors (TFTs) made after H2/O2 plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I on/I off over 1×108, and an electron mobility of 40.2 cm2 /V-s 相似文献
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E. Atanassova N. Novkovski D. Spassov A. Paskaleva A. Skeparovski 《Microelectronics Reliability》2014
The Time-Dependent-Dielectric Breakdown (TDDB) characteristics of MOS capacitors with Hf-doped Ta2O5 films (8 nm) have been analyzed. The devices were investigated by applying a constant voltage stress at gate injection, at room and elevated temperatures. Stress voltage and temperature dependences of hard breakdown of undoped and Hf-doped Ta2O5 were compared. The doped Ta2O5 exhibits improved TDDB characteristics in regard to the pure one. The maximum voltage projected for a 10 years lifetime at room temperature is −2.4 V. The presence of Hf into the matrix of Ta2O5 modifies the dielectric breakdown mechanism making it more adequate to the percolation model. The peculiarities of Weibull distribution of dielectric breakdown are discussed in terms of effect of three factors: nature of pre-existing traps and trapping phenomena; stress-induced new traps generation; interface layer degradation. 相似文献
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TiO_2/SiO_2、ZrO_2/SiO_2多层介质膜光学损耗及激光损伤研究 总被引:9,自引:0,他引:9
以TiO_2/SiO_2及ZrO_2/SiO_2多层介质膜为例,测试了不同工艺条件及不同膜系结构下薄膜样品的光学损耗及激光损伤阈值,同时对实验结果作了初步的分析讨论. 相似文献
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Ren F. Kuo J.M. Hong M. Hobson W.S. Lothian J.R. Lin J. Tsai H.S. Mannaerts J.P. Kwo J. Chu S.N.G. Chen Y.K. Cho A.Y. 《Electron Device Letters, IEEE》1998,19(8):309-311
We have demonstrated the first Ga2O3(Gd2O3) insulated gate n-channel enhancement-mode In0.53Ga0.47As MOSFET's on InP semi-insulating substrate. Ga2O3(Gd2 O3) was electron beam deposited from a high purity single crystal Ga5Gd3O12 source. The source and drain regions of the device were selectively implanted with Si to produce low resistance ohmic contacts. A 0.75-μm gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFETs. The current gain cutoff frequency, ft, and the maximum frequency of oscillation, fmax, of 7 and 10 GHz were obtained, respectively, for a 0.75×100 μm2 gate dimension device at a gate voltage of 3 V and drain voltage of 2 V 相似文献