基于DSA-ph的高效蓝色有机电致发光器件

以NPBX掺杂3%的DSA-ph作为发光层,BCP或TAZ作为空穴阻挡层,Alq3或Bphen作为电子传输层制作了一组蓝色有机电致发光器件。通过调整不同的空穴阻挡层与电子传输层之间的组合,得到了一组高效的蓝光OLED。测试结果表明,当空穴阻挡层为TAZ,电子传输层为Bphen时,器件的性能最优。当驱动电压为5V时,器件最大电流效率为4.59cd/A。在12V时亮度最大,为6 087cd/m2。     

MgF2缓冲层对蓝光OLED性能的影响

为了提高蓝光有机电致发光器件(OLED)的发光性能,将MgF2缓冲层插入ITO阳极与空穴传输层NPB之间,通过优化MgF2的厚度,制备了结构为ITO/MgF2(x nm)/NPB(50nm)/DPVBi:DSA-ph(30nm)/Alq3(30nm)/LiF(0.6nm)/Al(100nm)的高性能蓝光器件。实验结果表明,MgF2厚为1.0nm时,器件性能最佳,对应的器件最大电流效率达到5.51cd/A,最大亮度为23 290cd/m2(10.5V),与没有MgF2缓冲层的标准器件相比,分别提高47.3%和25.2%。对ITO表面的功函数测量结果表明,MgF2缓冲层可以有效修饰ITO表面,降低ITO与NPB之间的势垒高度差,改善空穴的注入效率,从而导致电子和空穴的注入更加平衡,激发机制更高效,实现了高性能的蓝光发射,为实现高效而稳定的全彩显示和白光照明奠定了基础。     

微腔结构顶发射有机白光器件

结合微腔效应,通过调节不同发光层的厚度制作了顶发射有机白光器件.器件结构为Si/Ag/Ag2O/m-MTDATA/NPB/DPVBi/DCJTB:Alq3/Alq3/LiF/Al/Ag,其中DPVBi,DCJTB与Alq3的掺杂层分别作为蓝光和红光发光层,在选定490 nm的谐振波长时,通过调节DPVBi和掺杂层的厚度来实现对器件发光色度的调节.当DPVBi厚度为1 nm,电压为9 V时,器件的色坐标为(0.33,0.34),非常接近白光等能点.此项工作为利用微腔效应制作高效率高亮度顶发射白光器件奠定了基础.     

基于ADN:TBPe发光层的蓝光OLED器件

全色显示是有机电致发光显示(OLED)器件发展的目标,而高性能蓝色发光器件,也是目前有机电致发光显示研究的热点。以NPB和Alq3分别作为空穴传输层和电子传输层,制作了结构为ITO/CuPc(150nm)/NPB(500nm)/ADN(300nm)∶TBPe(30nm)/Alq3(350nm)/RbF(20nm)/Al(1000nm)的蓝光OLED器件,发光亮度达8600cd/m2,发光效率达2.669cd/A,色坐标(X=0.1315,Y=0.1809)。研究发现ADN∶TBPe发光层体系的引入大大改善了蓝光器件的发光效率和性能。     

空穴传输层NPB中掺杂Alq3制备高性能的蓝光器件

研究了在空穴传输层NPB中掺杂Alq3制备高性能的蓝光有机电致发光器件（OLED）。采用传统的材料和结构，在空穴传输层NPB中掺杂Alq3，在掺杂浓度为3％时，OLED的色坐标为（0．17，0．19）、亮度为10770cd／m^2（在13V时）和最大效率为4．1cd／A。在同等条件下，Alq3掺杂降低了开启电压，在7V时亮度达到了118．8cd／m^2。研究分析表明，OLED性能的提高是由于NPB的HOMO能级比Alq3的HOMO能级高，掺杂剂Alq3对空穴有散射作用，阻挡了部分空穴的传输，降低了空穴的迁移率；而Alq3又是很好的电子传输材料，Alq3掺杂提高了空穴和电子在发光层中的注入平衡，有利于激子的形成，从而提高了器件的性能。     

调整有机层厚度制作高效率的电致蓝光器件

介绍利用优化有机膜厚度的方法,制作了发光效率较高的有机电致蓝光器件.器件的结构为:ITO/2T-NATA/NPB/DPVBi/TPBi/Alq3/LiF/Al,当2T-NATA,NPB,DPVBi,TPBi,Alq3,LiF的厚度分别为15 nm,10nm,20 nm,15 nm,25 nm,0.6 nm时,器件的性能最好.在电压为12 V,电流密度为537 mA/cm2时·亮度达到最大为13 540 cd/m2.在电压为7 V,电流密度为22 mA/cm2时,器件的最大电流效率为4.48 cd/A.且器件的开启电压较低,在4 V工作电压下,亮度达到4.82 cd/m2.电压在5～12 V的范围内,发光色度几乎不随驱动电压或电流密度的改变而改变,稳定在x=0.17,y=0.16附近,处于蓝光中心区域.     

具有微腔结构的有机顶发射电致发光器件的光谱分析

摘要: 制做了具有微腔结构的蓝色和白色有机顶发射电致发光器件。利用TBADN:3%DSAPh和Alq3:DCJTB/TBADN:TBPe/Alq3:C545材料为发光层,在玻璃基片上,依次制备薄膜：Ag为阳极反射层, CuPc作为空穴注入层,NPB作为空穴传输层,ITO为光程调节层; Al/Ag作为半透明阴极,电极的透射率在30%左右。通过改变ITO层的厚度,TBADN:3%DSAPh器件获得了深蓝色发光光谱,色坐标为(0.141, 0.049),半高宽为17nm发光光谱,实现了窄带发射,Alq3:DCJTB/TBADN:TBPe/Alq3:C545器件得到了不同颜色（红、蓝、绿）的发光光谱,实现了对光谱的调节作用。文章对微腔顶发射器件的发射强度和发光光谱半高宽的结果进行了分析。     

阻挡层结构的蓝色有机发光二极管

制备了ITO／CuPc/NPB/TPBi/Alq3/MgAg有机发光二极 管,由于阻挡层TPBi对空穴的阻挡作用,器件的电致发光为NPB特征光谱,实现了蓝色发光。器件最大亮度和最大流明效率分别为3700cd/cm^2和0.78 lm/W,CIE色坐标为x=0.110 ,y=0.085,色度纯正。然而器件显现出较差的稳定。利用器件的能级结构,分析了器件的光学特性和影响稳定性的因素。     

利用DPVBi的空穴阻挡和发光特性而制作的白光器件

介绍了结构为:ITO/m-MTDATA(40 nm)/NPB(5 nm)/DPVBi(10～12 nm)/Rubrene(0.5 nm)/DPVBi(20～18 nm)/Alq(50 nm)/LiF(0.5 nm)/Al的白光器件.该器件采用了两个DPVBi层中间夹一个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光、Alq的绿光和Rubrene的黄光,从而使器件发射性能较好的白光.当第一层的DPVBi和第二层的DPVBi的厚度分别是11 nm和19 nm时,其他层的厚度保持不变,该器件在15 V电压下,最大亮度为11 290 cd/m2 ,对应的效率为1.71 cd/A,色坐标为(0.25,0.27),属于白光发射;在6 V时,其最大效率为3.18 cd/A.     

基于FHQZn发光的色度稳定的有机白光器件

研究了一种新型发光材料(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinolato-Zinc的发光性能,利用它的空穴传输和发光特性制备了有机白光器件,器件的结构为:ITO/2T-NATA(15nm)/FHQZn(38nm)/NPB(25nm)/BCP(10nm)/Alq(30nm)/LiF(0.5nm)/Al,其中,(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinoato-Zinc(FHQZn)作为空穴传输层和黄橙色发射层,N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine(NPBX)作为蓝光发射层。器件最大的电流效率为1.68cd/A(at7V),最大的亮度为4624cd/m2(at12V),此时色坐标为(0.28,0.25)。器件的色坐标由7V(66.83cd/m2)时的(0.27,0.29)到12V(4624cd/m2)时的(0.28,0.25)几乎不变,是一个基于新型材料的色度较稳定的有机白光器件。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first