光电子薄膜器件

本文介绍了光电导，场致发光，和电致变色等光电子功能薄膜及器件，着重于应用于大屏幕显示和可见－红外动态图象转换系统的液晶光阀空间光调制器，电致发光以及场致变色薄膜器的原理，制作及特性等。     

《光电子技术》征稿简则北大核心

《光电子技术》由南京电子器件研究所主办,系学术性和技术性刊物,大16开,全年4期。《光电子技术》主要刊登国内外光电子领域的学术论文、研究报告和综述文章,及时报道该领域的新工艺、新材料、新产品以及有关器件、整机的应用。     

光电子技术与器件

~~光电子技术与器件     

EOM波长相关性对相位编码光模数转换系统的影响北大核心CSCD

理论分析了调制器波长相关性对多波长相位编码光模数转换器性能的影响,并进行了仿真验证。分析了系统有效比特位数与通道数、通道间隔以及调制器臂长差之间的关系。     

“光子和光电子集成”专题征文通知北大核心

光子和光电子集成技术是古老的光学学科的新兴前沿领域,它一方面通过光纤联系常规应用,另一方面正逐步走向集成芯片的未来。光子和光电子集成技术重点研究建立在各种材料平台上的光波导和微纳器件及其集成,包括波导和器件的设计、加工工艺、材料、集成方法等等,核心目标是实现更小、更快、更强的微纳光学功能器件、模块或芯片。光子和光电子集成技术是未来高速计算机和量子计算机等的关键技术。     

用于人工智能的硅基光电子芯片

提出了利用硅基光电子芯片进行人工神经网络计算处理的方法。硅基光电子芯片凭借光子的独特性质,能够在人工神经网络的计算处理中发挥高带宽、低时延等优势。在处理深度学习中大量的矩阵计算的乘加任务时,硅基光电子芯片拥有更高的处理速度和更低的能耗,从而有利于深度学习中的人工神经网络计算速度和性能的提升。     

迎接新世纪的光电子技术

60年代第一台红宝石激光器的出现,宣告光电子学的真正到来。经过近50年的开拓,作为一门新兴的技术科学一光电子学已经成熟。进入21世纪,这门技术科学的应用在走向广度的同时,将更加突出应用深度。强光与小信号光的应用将“分道扬根’;光信息通信将全面发挥经济和社会效益;光盘将迅速进入家庭而与计算机融合成信息家电应用激光设备将成为生产线的饺使者;军用光电子装备将成为主角;光机电微型化趋向将促使微机械光电子和技术产品的诞生一总之,技术先进的国家将从光电子技术中获取深度效益,发展中国家将不得不做出发展光电子技术的选…     

用于光控相控阵雷达的空间光调制器

空间光调制器是光信息处理机的基本结构单元,它能根据电驱动信号或光驱动信号,随时修正与空间和时间有关的读出光束的偏振、相位和幅度.介绍了适用于光控相控阵雷达系统的空间光调制器,包括它们的结构、原理和性能.     

量子点光电子器件及其研究进展

作为未来新型光电子器件的有源区材料,采用能带工程形成的各种半导体量子点,以其所具有的许多独特光电特性而日益显示出潜在的重要应用。着重评述了量子点激光器、量子点红外光探测器和量子点单光子发射器件在近3至5年内取得的最新进展,并对存在的问题进行了分析和讨论。最后,提出了进一步改善器件性能的几种可能途径。     

AIN膜及其在半导体光电器件中的应用

本文报道溅射AlN膜及其应用于半导体光电器件的实验研究结果。测定了不同条件下溅射的AlN膜厚度、淀积速率、折射率和击穿电场强度。首次用AlN膜做器件的端面保护和减反射膜以及表面钝化膜均获得成功。几种常用介质膜的实验数据对比分析表明AlN膜在半导体光电器件领域将有广阔应用前景。     

Optoelectronic Synapses and Photodetectors Based on Organic Semiconductor/Halide Perovskite Heterojunctions: Materials,Devices, and Applications

Both photodetectors (PDs) and optoelectronic synaptic devices (OSDs) are optoelectronic devices converting light signals into electrical responses. Optoelectronic devices based on organic semiconductors and halide perovskites have aroused tremendous research interest owing to their exceptional optical/electrical characteristics and low-cost processability. The heterojunction formed between organic semiconductors and halide perovskites can modify the exciton dissociation/recombination efficiency and modulate the charge-trapping effect. Consequently, organic semiconductor/halide perovskite heterojunctions can endow PDs and OSDs with high photo responsivity and the ability to simulate synaptic functions respectively, making them appropriate for the development of energy-efficient artificial visual systems with sensory and recognition functions. This article summarizes the recent advances in this research field. The physical/chemical properties and preparation methods of organic semiconductor/halide perovskite heterojunctions are briefly introduced. Then the development of PDs and OSDs based on organic semiconductor/halide perovskite heterojunctions, as well as their innovative applications, are systematically presented. Finally, some prospective challenges and probable strategies for the future development of optoelectronic devices based on organic semiconductor/halide perovskite heterojunctions are discussed.     

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si - based optoelectronic devices and integrated circuits can be achieved, it will lead to a new irtformational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si- based optoelectronic devices, such as light- emitting diodes, optical waveguides devices, Si photonic bandgap crystals, and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.     

有机半导体薄膜的光学和电学性质研究

采用真空热蒸镀技术制备了NPB有机半导体薄膜和单层夹心结构器件,通过透射谱测量研究了薄膜的光学能隙、折射率和消光系数等光学性质,结果表明有机半导体薄膜具有直接带隙半导体的光学性质,并且其折射率色散性质遵循单振子模型.另外,通过分析器件的电流-电压特性研究了薄膜的电导率、载流子迁移率和载流子浓度等电学性质.这些实验结果对于有机光电子器件的结构设计具有一定的参考价值.     

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low-Dimensional Semiconductors

Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low-dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light-matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two-terminal neuromorphic memristors, three-terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low-dimensional materials is prospected.     

ICP刻蚀技术及其在光电子器件制作中的应用

简单介绍了ICP(inductively coupled plasma)刻蚀设备的结构和刻蚀机理，报道了ICP刻蚀硅、二氧化硅和Ⅲ—Ⅴ族材料的一些最新进展，重点介绍ICP刻蚀技术在光电子器件制作方面的进展和应用前景。     

噪声测量作为筛选光电耦合器件的一种方法

本文针对目前用于光电耦合器件筛选方法的不足，提出了用测量耦合器件噪声功率谱的方法来筛选掉噪声值大的器件，给出一批光电耦合器件的测量统计结果及在不同工作点时的噪声功率谱，并给出相应的筛选标准，实验结果表明，这种方法是有效、可行的。     

光电耦合器件低频噪声特性与可靠性老化研究

在宽的输入偏置电流范围条件下,开展了光电耦合器件低频噪声特性测试与功率老化和高温老化的可靠性试验研究。结果表明,光电耦合器件的低频噪声主要是内部光敏晶体管1/f噪声,并随输入偏置电流的增大呈现先增大后减小的规律,这与器件的工作状态密切相关。功率老化试验后,高输入偏置电流条件下的低频噪声有所增大,这归因于电应力诱发的有源区缺陷。高温老化试验后,整个器件线性工作区条件下的低频噪声都明显增大,说明温度应力能够更多地激发器件内部的缺陷。相对于1/f噪声幅度参量,低频噪声宽带噪声电压参量可以更灵敏准确地进行器件可靠性表征。     

GaN基短波光电器件的研究进展

介绍了GaN基发光器件、电子器件以及GaN基紫外光(UV)探测器的研制和发展概况,描述了GaN基短波光电器件的研究进展并对其应用前景进行了展望。