High-pressure studies of superconductivity in $$\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}$$

\(\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}\) crystallizes in tetragonal CeOBiS\(_{2}\) structure (S. G. P4/nmm). We have investigated the effect of pressure on magnetization measurements. Our studies suggest improved superconducting properties in polycrystalline samples of \(\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}\). The \(T_{\mathrm{c}}\) in our sample is 5.3 K, at ambient pressure, which is marginal but definite enhancement over \(T_{\mathrm{c}}\) reported earlier (= 5.1 K). The upper critical field \(H_{\mathrm{c}2}\)(0) is greater than 3 T, which is higher than earlier report on this material. As determined from the M–H curve, both \(H_{\mathrm{c}2}\) and \(H_{\mathrm{c}1}\) decrease under external pressure P (0 \(\le P \le \) 1 GPa). We observe a decrease in critical current density and transition temperature on applying pressure in \(\hbox {BiO}_{0.75}\hbox {F}_{0.25}\hbox {BiS}_{2}\).     

Resistance-switching properties of Bi-doped $$\hbox {SrTiO}_{3}$$ films for non-volatile memory applications with different device structures

\(\hbox {SrTiO}_{3}\) and Bi-doped \(\hbox {SrTiO}_{3}\) films were fabricated with different device structures using the sol–gel method for non-volatile memory applications, and their resistance-switching behaviour, endurance and retention characteristics were investigated. \(\hbox {SrTiO}_{3}\) and \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt have the same phase structure, morphologies and grain size; however, the grain size of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si is slightly larger than those of the \(\hbox {SrTiO}_{3}\) films grown on Si and the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Pt. The \(\hbox {SrTiO}_{3}\) or \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films grown on Si or Pt all exhibit bipolar resistive-switching behaviour and follow the same conductive mechanism; however, the \(\hbox {Ag}/\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}/\hbox {Si}\) device possesses the highest \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of \(10^{5}\) and the best endurance and retention characteristics. The doping of Bi is conducive to enhance the \(R_{\mathrm{HRS}}{/}R_{\mathrm{LRS}}\) of the \(\hbox {SrTiO}_{3}\) films; meanwhile, the Si substrates help improve the endurance and retention characteristics of the \(\hbox {Sr}_{0.92}\hbox {Bi}_{0.08}\hbox {TiO}_{3}\) films.     

Characterization and optical properties of $$\hbox {Pr}_{2}\hbox {O}_{3}$$-doped molybdenum lead-borate glasses

\(\hbox {Pr}^{3+}\) doped molybdenum lead-borate glasses with the chemical composition 75PbO?[25–(x \(+\) y)\(\hbox {B}_{2}\hbox {O}_{3}]\)–\(y\hbox {MoO}_{3}\)–\(x\hbox {Pr}_{2}\hbox {O}_{3}\) (where \(x = 0.5\) and 1.0 mol% and \(y = 0\) and 5 mol%) were prepared by conventional melt-quenching technique. Thermal, optical and structural analyses are carried out using DSC, UV and FTIR spectra. The physical parameters, like glass transition \((T_{\mathrm{g}})\), stability factor \((\Delta T)\), optical energy band gap \((E_{\mathrm{gopt}})\), of these glasses have been determined as a function of dopant concentration. The \({T}_{\mathrm{g}}\) and optical energy gaps of these glasses were found to be in the range of 290–350\({^{\circ }}\hbox {C}\) and 2.45–2.7 eV, respectively. Stability of the glass doped with \(\hbox {Pr}^{3+}\) is found to be moderate (\(\sim \)40). The results are discussed using the structural model of Mo–lead-borate glass.     

Inhomogeneous Superconducting Behaviour in $$\hbox {La}_{5}\hbox {Ni}_{2}\hbox {Si}_{3}$$

The superconducting phase transition at \(T_\mathrm{c} = 2.3\) K was observed for the electrical resistivity \(\rho ({T})\) and magnetic susceptibility \(\chi (T)\) measurements in the ternary compound La\(_{5}\hbox {Ni}_{2}\hbox {Si}_{3}\) that crystallizes in the hexagonal-type structure. Although a single-phase character with the nominal stoichiometry of the synthesized sample was confirmed, a small trace of the La–Ni phase was found, being probably responsible for the superconducting behaviour in the investigated compound. The magnetization loop recorded at \({T} = 0.5\) K resembles a star-like shape which indicates that the density of the critical current can be strongly suppressed by a magnetic field. The low-\(T _{\rho }(T)\) and specific heat \({C}_\mathrm{p}({T})\) data in the normal state reveal simple metallic behaviour. No clear evidence of a phase transition to any long- or short-range order was found for \(C_\mathrm{p}(T)\) measurements in the T-range of 0.4–300 K.     

A first-principle investigation into effect of B- and BN-doped $$\hbox {C}_{60}$$ in lowering dehydrogenation of $$\hbox {MXH}_{4}$$MXH4 (where M $$=$$= Na,Li and X $$=$$= Al,B)

The present paper reports the effect of B- and BN-doped \(\hbox {C}_{60}\) as catalysts for lowering the dehydrogenation energy in \(\hbox {MXH}_{4}\) clusters (M = Na and Li, X = Al and B) using density functional calculations. \(\hbox {MXH}_{4}\) interacts strongly with B-doped \(\hbox {C}_{60}\) and weakly with BN-doped \(\hbox {C}_{60}\) in comparison with pure \(\hbox {C}_{60}\) with binding energy 0.56–0.80 and 0.05–0.34 eV, respectively. The hydrogen release energy \((E_{\mathrm{HRE}})\) of \(\hbox {MXH}_{4}\) decreases sharply in the range of 38–49% when adsorbed on B-doped \(\hbox {C}_{60}\); however, with BN-doped \(\hbox {C}_{60}\) the decrease in the \(E_{\mathrm{HRE}}\) varies in the range of 6–20% as compared with pure \(\hbox {MXH}_{4}\) clusters. The hydrogen release energy of second hydrogen atom in \(\hbox {MXH}_{4}\) decreases sharply in the range of 1.7–41% for BN-doped \(\hbox {C}_{60}\) and decreases in the range of 0.2–11.3% for B-doped \(\hbox {C}_{60}\) as compared with pure \(\hbox {MXH}_{4}\) clusters. The results can be explained on the basis of charge transfer within \(\hbox {MXH}_{4}\) cluster and with the doped \(\hbox {C}_{60}\).     

Effect of annealing temperature and $$\hbox {CdCl}_{2}$$ treatment on the photo-conversion efficiency of $$\hbox {CdTe/Zn}_{0.1}$$CdTe/Zn0.1$$\hbox {Cd}_{0.9}$$Cd0.9S thin film solar cells

We report the effects of annealing in conjunction with \(\hbox {CdCl}_{2}\) treatment on the photovoltaic properties of \(\hbox {CdTe/Zn}_{0.1}\hbox {Cd}_{0.9}\)S thin film solar cells. CdTe layer is subjected to dry \(\hbox {CdCl}_{2}\) treatment by thermal evaporation method and subsequently, heat treated in air using a tube furnace from 400 to \(500{^{\circ }}\hbox {C}\). AFM and XRD results show improved grain size and crystallographic properties of the CdTe film with dry \(\hbox {CdCl}_{2}\) treatment. This recrystallization and grain growth of the CdTe layer upon \(\hbox {CdCl}_{2}\) treatment translates into improved photo-conversion efficiencies of \(\hbox {CdTe/Zn}_{0.1}\hbox {Cd}_{0.9}\)S cell. The results of dry \(\hbox {CdCl}_{2}\) treatment were compared with conventional wet \(\hbox {CdCl}_{2}\) treatment. Photo-conversion efficiency of 5.2% is achieved for dry \(\hbox {CdCl}_{2}\)-treated cells in comparison with 2.4% of wet-treated cell at heat treatment temperature of \(425{^{\circ }}\hbox {C}\).     

Elastic and thermodynamic properties of zirconium- and hafnium-doped $$\hbox {Rh}_{3}\hbox {V}$$ intermetallic compounds: potential aerospace material

Structural, electronic, mechanical and thermodynamic properties of \(\hbox {Rh}_{3}\hbox {Zr}_{x}\hbox {V}_{1-x}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{x}\hbox {V}_{1-x}\) (\(x = 0\), 0.125, 0.25, 0.75, 0.875 and 1) combinations are investigated by means of first-principles calculations based on the density functional theory within the generalized gradient approximation. Here, \(\hbox {Rh}_{3}\hbox {V}\) is chosen as the parent binary compound and the doping elements are zirconium and hafnium with the above-mentioned concentrations. The calculated lattice parameters and elastic modulus of binary \(\hbox {Rh}_{3}\hbox {Hf}\), \(\hbox {Rh}_{3}\hbox {V}\) and \(\hbox {Rh}_{3}\hbox {Zr}\) are in good agreement with the available experimental and other theoretical results. In this study, the following ternary materials viz., \(\hbox {Rh}_{3}\hbox {Zr}_{0.75}\hbox {V}_{0.25}\), \(\hbox {Rh}_{3}\hbox {Hf}_{0.25}\hbox {V}_{0.75}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) are found to be brittle/more brittle than the parent binary compound \(\hbox {Rh}_{3}\hbox {V}\), whereas the other ternary combinations, namely \(\hbox {Rh}_{3}\hbox {Zr}_{0.125}\hbox {V}_{0.875}\), \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\), \(\hbox {Rh}_{3}\hbox {Zr}_{0.875}\hbox {V}_{0.125}\), \(\hbox {Rh}_{3}\hbox {Hf}_{0.125}\hbox {V}_{0.875}\) and \(\hbox {Rh}_{3}\hbox {Hf}_{0.875}\hbox {V}_{0.125}\) are found to be more ductile than \(\hbox {Rh}_{3}\hbox {V}\). The more brittle ternary combination, namely \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) (\(B = 229.32\,\hbox {GPa}\)) has the maximum Young’s modulus, shear modulus and hardness values; whereas the more ductile ternary \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\) combination (\(B = 243.54\,\hbox {GPa}\)) is found to have the least values of Young’s modulus, shear modulus and hardness. The band structure, density of states histograms and charge density plots are drawn and discussed. Computed Debye temperature (\(\theta _{\mathrm{D}}\)), Grüneisen parameter (\(\zeta \)) and melting temperature (\(T_{\mathrm{m}})\) of the parent binary compound \(\hbox {Rh}_{3}\hbox {V}\), the more brittle \(\hbox {Rh}_{3}\hbox {Hf}_{0.75}\hbox {V}_{0.25}\) combination and the more ductile \(\hbox {Rh}_{3}\hbox {Zr}_{0.25}\hbox {V}_{0.75}\) combination are given by (895 K, 1.3491, 2788 K), (790 K, 1.2701, 2736 K) and (698 K, 1.7972, 2529 K), respectively.     

Influence of Thermal Annealings in Argon on the Structural and Thermochromic Properties of $$\mathrm{MoO}_{3}$$ Thin Films

The effect of thermal annealing in an inert atmosphere (argon) on the structural and thermochromic properties of \(\hbox {MoO}_{3}\) thin films was investigated. \(\hbox {MoO}_{3}\) thin films were deposited by thermal evaporation in vacuum of \(\hbox {MoO}_{3}\) powders. X-ray diffraction patterns of the films showed the presence of the monoclinic Magneli phase \(\hbox {Mo}_{9}\hbox {O}_{26}\) for annealing temperatures above \(250\,{^{\circ }}\hbox {C}\). Absorbance spectra of the films annealed in argon indicated that their thermochromic response increases with the annealing temperature in the analyzed range (23 \({^{\circ }}\hbox {C}\)–300 \({^{\circ }}\hbox {C}\)), a result opposite to the case of thermal annealings in air, for which case the thermochromic response shows a maximum value around 200 \({^{\circ }}\)C–225 \({^{\circ }}\)C and decreases for higher temperatures. These results are explained in terms of a higher density of oxygen vacancies formed upon thermal treatments in inert atmospheres.     

Fabrication and enhanced photoluminescence properties of $$\hbox {NaLa}(\hbox {MoO}_{4})_{2}$$: $$\hbox {Sm}^{3+}$$Sm3+, $$\hbox {Bi}^{3+}$$Bi3+ phosphors with high efficiency white-light-emitting

The tetragonal scheelite-type \(\hbox {Sm}^{3+}\hbox {/Bi}^{3+}\) ions co-doped with \(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\) phosphors were synthesized by a facile sol–gel and combustion process using citric acid as complexing agent. The crystal structure and morphology of these as-prepared samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Furthermore, UV-absorption and the photoluminescence (PL) properties of these phosphors were systematically investigated and the PL of the phosphors shows strong white light emissions. Efficient energy transfer from the \(\hbox {MoO}_{4}^{2-}\) group or \(\hbox {Bi}^{3+}\) ions to \(\hbox {Sm}^{3+}\) ions was established by PL investigation excited at 405 nm. The PL intensity of the studied materials was investigated as a function of different \(\hbox {Sm}^{3+}\) and \(\hbox {Bi}^{3+}\) concentrations. The PL investigations revealed that the phosphors exhibit apparent characteristic emissions, which is ascribed to the transition from the ground state energy level \(^{4}\hbox {G}_{5/2}\) to excited state energy levels \(^{6}\hbox {H}_{\mathrm{J}}\) (\(J= 5/2, 7/2, 9/2\)) and the \(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\) and \(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\), 8 mol% \(\hbox {Bi}^{3+}\) present white emissions with the CIE coordinates of (0.350, 0.285) and (0.285, 0.229), respectively. The absolute quantum efficiencies of the phosphors are 40% (\(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\)) and 52% (\(\hbox {NaLa}(\hbox {MoO}_{4})_{2}\): 4 mol% \(\hbox {Sm}^{3+}\), 8 mol% \(\hbox {Bi}^{3+}\)), respectively.     

Study of optical properties of potassium permanganate ($$\hbox {KMnO}_{4}$$) doped poly(methylmethacrylate) (PMMA) composite films

We have developed films of pure polymethylmethacrylate (PMMA) (0.5, 1, 2 and 5%) and potassium permanganate \((\hbox {KMnO}_{4})\)-doped PMMA composite films of thickness (\(\sim 100\, \upmu \hbox {m}\)) using the solution-cast technique. To identify the possible change that happen to the PMMA films due to doping, the optical properties were investigated for different concentrations of \(\hbox {KMnO}_{4}\) by recording the absorbance (A) and transmittance (\(T\%\)) spectra of these films using UV–Vis spectrophotometer in the wavelength range of 300–1100 nm. From the data obtained from the optical parameters viz. absorption coefficient (\(\alpha \)), extinction coefficient (\(\kappa \)), finesse coefficient (F), refractive index (\(\eta \)), real and imaginary parts of dielectric constant (\(\varepsilon _{\mathrm{r}}\) and \(\varepsilon _{\mathrm{i}})\) and optical conductivity (\(\sigma \)) were calculated for the prepared films. The indirect optical band gap for the pure and the doped-PMMA films were also estimated.     

Structural,dielectric and piezoelectric study of Ca-, Zr-modified $$\hbox {BaTiO}_{3}$$ lead-free ceramics

We prepared a lead-free ceramic (\(\hbox {Ba}_{0.85}\hbox {Ca}_{0.15})(\hbox {Ti}_{1-x}\hbox {Zr}_{x})\hbox {O}_{3}\) (BCTZ) using the conventional mixed oxide technique. The samples were prepared by an ordinary mixing and sintering technique. In this study we investigated how small amounts of \(\hbox {Zr}^{4+}\) can affect the crystal structure and microstructure as well as dielectric and piezoelectric properties of \(\hbox {BaTiO}_{3}\). X-ray diffraction analysis results indicate that no secondary phase is formed in any of the BCTZ powders for \(0 \le x \le 0.1\), suggesting that \(\hbox {Zr}^{4+}\) diffuses into \(\hbox {BaTiO}_{3}\) lattices to form a solid solution. Scanning electron microscopy micrographs revealed that the average grain size gradually increased with \(\hbox {Zr}^{4+}\) content from 9.5 \(\upmu \!\hbox {m}\) for \(x = 0.02\) to 13.5 \(\upmu \!\hbox {m}\) for \(x = 0.1\); Curie temperature decreased due to the small tetragonality caused by \(\hbox {Zr}^{4+}\) addition. Owing to the polymorphic phase transition from orthorhombic to tetragonal phase around room temperature, it was found that the composition \(x = 0.09\) showed improved electrical properties and reached preferred values of \(d_{33} = 148\) pC \(\hbox {N}^{-1}\) and \(K_{\mathrm{p}} = 27\%\).     

Effect of annealing treatment on optical properties and microstructural variation of $$\hbox {WO}_{3}/\hbox {Ag}/\hbox {WO}_{3}$$ multilayer nano-films

Structural and optical properties of \(\text {WO}_{3}/\text {Ag}/\text {WO}_{3}\) nano-multilayer composites were investigated for heat mirror applications. \(\text {WO}_{3}/\text {Ag}/\text {WO}_{3}\) thin films were fabricated through a physical vapour deposition method by using electron-beam evaporation at the vacuum chamber at 10\(^{-5}\) Torr. \(\text {WO}_{3}\) nano-layer was fabricated at 40 nm. Annealing treatment was carried out at 100, 200, 300 and 400\(^{\circ }\)C for 1 h after the deposition of first layer of \(\text {WO}_{3}\) on the glass. On \(\text {WO}_{3}\) film, Ag nano-layers with 10, 12 or 14 nm thickness were deposited. Individual layers morphology was investigated using atomic force microscopy (AFM) and deduced that a smoother layer can be achieved after the annealing at 300\(^{\circ }\)C. Ellipsometry analysis was executed to determine both layers, Ag film thickness and inter-diffusion between the \(\text {WO}_{3}\)–Ag–\(\text {WO}_{3}\) layers. It was inferred that there was almost no interfering among the \(\text {WO}_{3}\)–\(\text {WO}_{3 }\) layers in the samples with 12 and 14 nm Ag thickness; while silver was deposited on the annealed \(\text {WO}_{3}\) layer at 300\(^{\circ }\)C. UV–visible spectrophotometer showed that the annealing treatment of the first \(\text {WO}_{3}\) layer enhanced the transparency of films in the visible region. The innovations of the present study have been based on the annealing of the films and finding an optimum thickness for the Ag film at 12–14 nm. Heat mirrors efficiency was assessed according to the principle of their optical behaviour and optimum performance obtained for 14 nm of Ag film, deposited on annealed tungsten oxide at 300\(^{\circ }\)C.     

Evaluation of the elastic properties of monovalent oxides using $$\hbox {TeO}_{2}$$-based glasses

Quaternary tellurite glasses with composition \(75\hbox {TeO}_{2}\)–\(5\hbox {WO}_{3}\)–\(15\hbox {Nb}_{2} \hbox {O}_{5}\)–\(5\hbox {M}_{x} \hbox {O}_{y}\) in mol%, where \(\hbox {M}_{x}\hbox {O}_{y}\) = (\(\hbox {Na}_{2}\hbox {O}, \, \hbox {Ag}_{2}\hbox {O}\), ZnO, MgO, CuO, NiO, \(\hbox {TiO}_{2}\), \(\hbox {MnO}_{2}\)), were prepared by the normal melt-quenching method. The ultrasonic velocities (longitudinal and shear) were measured in these glasses using the pulse-echo technique at room temperature. Their elastic moduli, microhardness and Debye temperature were calculated and discussed in terms of the modifier’s ionicity and quantitatively in terms of number of bonds per unit volume and the cross-link density. In this study, the values of ultrasonic velocities, elastic moduli, Debye temperature and microhardness were found to be strongly dependent on three factors, namely: (i) modifier’s ionicity; (ii) trigonal pyramid (\(\hbox {TeO}_{3}\))/trigonal bipyramid (\(\hbox {TeO}_{4}\)) ratio; and (iii) glass transition temperature \(T_\mathrm{g}\). We used the Makishima and Mackenzie’s model to calculate the theoretical elastic moduli and to indicate that the experimental values were in good agreement with the theoretical values.     

Temperature and Heat Flow Rate Calibration of a Calvet Calorimeter from $$0\,{^{\circ }}\hbox {C}$$ to $$190 \,{^{\circ }}\hbox {C}$$19

This study describes the temperature and heat flow rate calibrations of a Calvet calorimeter (SETARAM, BT2.15) in the temperature range of 0–190 \({^{\circ }}\hbox {C}\). Temperature calibration is carried out using three reference materials, namely water, gallium, and indium, as specified in the International Temperature Scale of 1990 (ITS-90). The sample temperature of the Calvet calorimeter is corrected by the obtained mean value, \(-0.489 \,{^{\circ }}\hbox {C}\), of the measured extrapolated peak onset temperature (\(T_{e})\) when the heating rate (\(\upbeta )\) is zero (\(\Delta T_\mathrm{corr }(\upbeta ~=~0\))). The heat flow rate is calibrated using a reference material with a known heat capacity, namely SRM 720 \(\alpha \)-\(\hbox {Al}_{2}\hbox {O}_{3}\) (synthetic sapphire), which is traceable to the National Institute of Standards and Technology. From the heat flow rate measurements of the blank baseline and SRM 720, the proportional calibration factor, \(\hbox {K}_{\Phi }\), in the 0–190\( \,{^{\circ }}\hbox {C}\) temperature range was determined. The specific heat capacity of copper was measured with the obtained calibration values, and the measured data show consistency with the reference value.     

Rectifying resistance-switching behaviour of Ag/SBTO/STMO/$$\hbox {p}^{+}$$-Si heterostructure films

The \(\hbox {Sr}_{0.88}\hbox {Bi}_{0.12}\hbox {TiO}_{3}/\hbox {SrTi}_{0.92}\hbox {Mg}_{0.08}\hbox {O}_{3}\) (SBTO/STMO) heterostructure films were prepared on \(\hbox {p}^{+}\hbox {-Si}\) substrates by sol–gel spin-coating technique, and the films had good crystallinity and uniform grain distribution. The heterostructure films with a structure of Ag/SBTO/STMO/\(\hbox {p}^{+}\hbox {-Si}\) exhibited a bipolar, remarkable resistance-switching characteristic, and \(R_{\mathrm{HRS}}/R_{\mathrm{LRS}}\,\,{\sim }10^{4}\). More importantly, the heterostructure films showed rectifying characteristic in the low resistance state (LRS), and the rectification ratio can reach \(10^{2 }\) at \(\pm 1\hbox { V}\). The dominant resistive-switching conduction mechanism of high resistance state (HRS) was Ohmic behaviour, and the LRS changed to space charge-limited current (SCLC).     

Superconducting epitaxial $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\delta }$$ on $$\hbox {SrTiO}_{3}$$SrTiO3-buffered Si(001)

Thin films of optimally doped(001)-oriented \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) are epitaxially integrated on silicon(001) through growth on a single crystalline \(\hbox {SrTiO}_{3}\) buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the \(\hbox {SrTiO}_{3}\) buffer enables high quality \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick \(\hbox {SrTiO}_{3}\) buffer, 50-nm thick \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) films that exhibit a transition temperature of \(\sim \)93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\updelta }\) on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.     

Microwave hydrothermal synthesis and upconversion luminescence properties of $$\hbox {Yb}^{3+}$$/$$\hbox {Tm}^{3+}$$Tm3+ co-doped $$\hbox {NaY}(\hbox {MoO}_{4})_{2}$$NaY(MoO4)2 phosphor

Tetragonal \(\text {NaY}(\text {MoO}_{4})_{2}\) (NYM) phosphors co-doped with \(\hbox {Yb}^{3+}\) and \(\hbox {Tm}^{3+}\) ions were synthesized through microwave hydrothermal method followed by calcining treatment. Powder X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and photoluminescence spectra were used to characterize the properties of as-prepared samples. The results show that \(\hbox {Yb}^{3+}\)/\(\hbox {Tm}^{3+}\) co-doped NYM displayed bright blue emission near 472 and 476 nm (\(^{1}\hbox {G}_{4}\rightarrow {}^{3}\hbox {H}_{6}\) transition), strong near-infrared upconversion (UC) emission around 795 nm (\(^{3}\hbox {H}_{4}\rightarrow {}^{3}\hbox {H}_{6}\) transition). The optimum doping concentrations of \(\hbox {Yb}^{3+}\) and \(\hbox {Tm}^{3+}\) for the most intense UC luminescence were obtained, and the related UC mechanism of \(\hbox {Yb}^{3+}\)/\(\hbox {Tm}^{3+}\) co-doped NYM depending on pump power was studied in detail.     

Thermo-transport properties of Zn-substituted layered Li-nickel oxide, $$\hbox {LiNiO}_{2}$$

The layered Li-TM-\(\hbox {O}_{2}\) materials have been investigated extensively due to their application as cathodes in Li batteries. The electrical properties of these oxides can be tuned or controlled either by non-stoichiometry or substitution. Hence the thermo-transport properties of Zn-substituted \(\hbox {LiNi}_{1-x}\hbox {Zn}_{x}\hbox {O}_{2}\) for \(0 \le x \le 0.16\) have been investigated in the temperature range of 300–900 K for potential application as a high-temperature thermoelectric material. For \(x < 0.08\), the compounds were of single phase belonging to the space group R-3mH while for \(x > 0.08\) an additional minority phase, ZnO forms together with the main layered phase. All the compounds exhibit a semiconducting behaviour with electrical resistivity, varying in the range of  \(\sim 10^{-4}\) to \(10^{-2}\,\,\Omega \hbox {m}\) between 300 and 900 K. The electrical resistivity is found to increase with increasing Zn-substitution predominantly due to a decrease in the charge carrier hole mobility. The activation energy remains constant, \(\sim \)10  meV, with Zn-substitution. The Seebeck coefficient of the compounds is found to decrease with increasing temperature and increase with increasing Zn-substitution. The Seebeck coefficient decreases from \(\sim \)95 to \(35\ \upmu \hbox {V K}^{-1}\) and the corresponding power factor is \(\sim \)12\(\ \upmu \hbox {W m}^{-1}\ {\hbox {K}}^{-2}\) for the \(x = 0.16\) compound.     

Synthesis,characterization and electrochemical performance of $$\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}$$ cathode materials for lithium ion batteries

\(\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}\) (\(x = 0\), 0.2, 0.4, 0.6, 0.8 and 1) samples were prepared by a sol–gel process. The crystal structure of prepared samples of \(\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}\) was characterized using an X-ray diffractometer. Different crystallographic parameters such as crystallite size and lattice cell parameters have been calculated. Scanning electron microscopy and Fourier transform infrared spectroscopy investigations were carried out, which reveal the morphology and function groups of the synthesized samples. Furthermore, electrochemical impedance spectra measurements are performed. The obtained results indicated that the highest conductivity is achieved for the \(\hbox {Li}_{2}\hbox {Ni}_{0.4}\hbox {Fe}_{0.6}\hbox {SiO}_{4}\) electrode compound. It was observed that Li–\(\hbox {Li}_{2}\hbox {Ni}_{0.4}\hbox {Fe}_{0.6}\hbox {SiO}_{4}\) battery has initial discharge capacity of 164 mAh \(\hbox {g}^{-1}\) at 0.1C rate. The cycle life performance of all \(\hbox {Li}_{2}\hbox {Ni}_{x}\hbox {Fe}_{1-x}\hbox {SiO}_{4}\) batteries ranged between 100 and 156 mAh \(\hbox {g}^{-1}\) with coulombic efficiency range between 70.9 and 93.9%.     

Microwave-hydrothermal synthesis of mesoporous $$\upgamma $$-$$\hbox {Al}_{2}\hbox {O}_{3}$$Al2O3 and its impregnation with AgNPs for excellent catalytic oxidation of CO

Mesoporous \(\upgamma \)-alumina was synthesized by the microwave-hydrothermal process with a shorter duration time at 150\({^{\circ }}\)C/2 h followed by calcination at 550\({^{\circ }}\)C/1 h. Ag nanoparticles (AgNPs) were impregnated into \(\upgamma \)-alumina under a reducing atmosphere at 450\({^{\circ }}\)C. The synthesized product was characterized by X-ray diffraction (XRD), thermogravimetric (TG)/differential thermal analysis (DTA), X-ray photoelectron spectroscopy (XPS), \(\hbox {N}_{2}\) adsorption–desorption study, field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The BET surface area values of \(\upgamma \)-alumina and Ag-impregnated \(\upgamma \)-alumina were found to be 258 and 230 m\(^{2}\) g\(^{-1}\), respectively. FESEM images showed the formation of grain-like particles of 50–70 nm in size with a flake-like microstructure. The XRD, XPS and TEM studies confirmed the presence of Ag in the synthesized product. Catalytic properties of the product for CO oxidation was studied with the \(T_{50}\) (50% conversion) and \(T_{100}\) (100% conversion) values of 118 and 135\({^{\circ }}\)C, respectively; the enhanced values were compared with the literature reported values.