Improvement of organic solar cell efficiency by solution-processed doping of pentacene in PEDOT:PSS layer

In the current research, organic solar cells (OSCs) with various concentrations of pentacene in Poly(ethylenedioxythiopene):Poly(styrenesulfonate) (PEDOT:PSS) interface layer were investigated for better hole extraction. The ITO/Pentacene?+?PEDOT:PSS/P3HT:PCBM/Al-fabricated solar cell fabricated via brush coating provides superior photovoltaic, electrical and optical characteristics when compared with the ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell. The ITO/Pentacene?+?PEDOT:PSS/P3HT:PCBM/Al solar cells deliver a V_OC ~350?mV and 2.57% efficiency. It is observed that the optimized concentration of pentacene doping in PEDOT:PSS layer, along with an active layer of P3HT and PC₆₀BM, doubles the efficiency of the device, when compared with pristine PEDOT:PSS layer. The degradation studies of the fabricated bulk heterojunction OSCs reveal that the degrading abilities of ITO/Pentacene?+?PEDOT:PSS/P3HT:PCBM/Al solar cells are 60% more better than those of ITO/PEDOT:PSS/P3HT:PCBM/Al devices. Thus, this work will ultimately contribute toward fully solution processed painted device, which will provide low-cost manufacturing and improved stability of pentacene-based organic photovoltaics.     

Effect of 8-hydroxyquinolatolithium buffer layer on the performance of polymer photovoltaic cells

Photovoltaic performance of bulk heterojunction polymer solar cells (PSCs) based on poly(3-hexylthiophene) as donor and [6,6]-phenyl-C₆₁-buytyric acid methyl ester as acceptor was improved by using a thin 8-hydroxyquinolatolithium (Liq) interlayer between polymer active layer and Al counter-electrode. By using 1.0 nm Liq, power conversion efficiency (PCE) of the PSC significantly increased to 3.20%, in comparison with a PCE of 2.40% for the PSC without Liq buffer layer. The PCE enhancement was primarily beneficial from the obviously increased short circuit current density, open circuit voltage and fill factor. This improvement is ascribed to the interfacial dipole effect, a better ohmic conductivity and the suppression of leakage current, which are all introduced by the Liq buffer layer.     

MoO3 buffer layer effect on photovoltaic properties of interpenetrating heterojunction type organic solar cells

Photovoltaic cells, with a conducting polymer/fullerene (C₆₀) interpenetrating heterojunction structure fabricated by spin-coating a conducting polymer onto a C₆₀ thin film, have been investigated and demonstrated a high efficiency as solar cells based on organic materials. The photovoltaic properties of the solar cells with a structure of indium-tin-oxide (ITO)/C₆₀/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of a molybdenum trioxide (VI) (MoO₃) layer as a cathode buffer layer. In the solar cells with the structure of ITO/C₆₀/PAT6/MoO₃/Au, the energy conversion efficiency has been improved to 1.15% under AM1.5 (100 mW/cm²) illumination.     

Improvement of the short-circuit current density and efficiency in micromorph tandem solar cells by an anti-reflection layer

An anti-reflection layer has been fabricated and applied in micromorph tandem (a-Si:H/μc-Si:H) solar cells. In this work, the porous anti-reflection layers are produced on glass substrates by plasma enhanced chemical vapor deposition using a CF₄ and O₂ gas mixture. The process is simple and easily controlled. The tandem solar cells with the anti-reflection layer show the increased short-circuit current density of the solar cells due to increased light transmittance from air/glass interface. With the anti-reflection layer, the short-circuit current density of the tandem cell increases by 0.29 mA/cm². Meanwhile, the solar cell efficiency increases from 11.15% to 11.55% (3.5% in relative) which allows us to develop more efficient a-Si based solar cells.     

Investigation on effect of blocking layer in perovskite sensitized pure and aluminium doped ZnO photoanode solar cell

ZnO is a promising candidate as low cost, porous semiconductor material for photoanodes in a dye sensitized solar cell. In this work, we investigate the performance of pure ZnO nanoparticles (ZNPs), Al₂O₃ doped ZnO (Al@ZNPs) and ZnO/Nb₂O₅ core–shell structure of photoanode material. These electrodes were sensitized with a pervoskite CH₃NH₃SnCl₃ sensitizer. To study the effect of the Al₂O₃, Nb₂O₅ treatment with ZnO, the J–V and EIS parameters, the current density (Jsc),Open circuit voltage (Voc), fill factor (FF), electron life time (τ_n), electron mobility (µ) and charge collection efficiency (?_cc) are calculated for the fabricated solar cells and the results are compared. It was found that the Al₂O₃ doped ZnO with the sensitizer CH₃NH₃Sncl₂ showed the highest efficiency of 9.41% under 100 mW/cm² irradiation. The electron impedance spectroscopy revealed that the charge collection efficiency (?_cc) of the solar cells is in the order of PSSC3?>?PSSC4?>?PSSC2?>?PSSC1. In this work, the effect of blocking layer (Ta₂O₅) is also discussed. From the J–V and EIS analysis, the effect of blocking layer is appreciable and it is useful to increase the efficiency of the solar cell by the way of reducing the recombination of charge carriers process. Therefore, the increase of photocurrent is mainly due to the combined effect of the sensitizer competence and blocking layer.     

Advanced light trapping materials: Double layer ZnO:B based transparent conductive oxide

We present double layer structures consisting of ZnO:B/ZnO:B (BZO) and In₂O₃:Mo (IMO)/BZO films. The structure offers the unique opportunity of separating the conductivity of transparent conductive oxides from their light scattering behavior and allows their optimization for use in thin film solar cells. The layers serve as carrier transport and light trapping layers, respectively. BZO films were prepared by mid-frequency magnetic sputtering from a ZnO:B₂O₃ ceramic target. In order to enhance the conductivity of the BZO films, hydrogen was introduced into the sputtering atmosphere. Introducing hydrogen increased the mobility of the BZO-based double layer films to near 30 cm²/V•s. Efficient scattering was achieved by etching the film in dilute hydrochloric acid. IMO films were also tested as the transport layer. An unconventional surface morphology was obtained by etching the IMO/BZO double layer film. Using this cascading multilayer structure IMO/BZO film as the front contact in a-Si:H solar cell, 20.4% and 7.4% enhancements in short circuit current density were obtained compared to smooth IMO films and textured single layer BZO films.     

Effects of atomic layer deposited HfO2 compact layer on the performance of dye-sensitized solar cells

The performance of dye-sensitized solar cells (DSSCs) is limited by the back-reaction of photogenerated electrons from the photoelectrode back into liquid electrolyte. An atomic layer deposited (ALD) hafnium oxide (HfO₂) ultra thin compact layer was grown on the surface of the transparent conducting oxide (TCO) and its effects on the DSSC performance were studied with dark and illuminated current-voltage and electrochemical impedance spectroscopy measurements. It was found that this compact layer was effectively blocking the back-reaction of electrons from TCO to the liquid electrolyte, resulting in the overall photoconversion efficiency being enhanced by 66% compared to a DSSC with a conventional sol-gel processed TiO₂ compact layer. Reasons for the improved photovoltaic performance were attributed to passivation of the TCO surface, better electronic quality of the compact layer material and the higher compactness, shown by atomic force microscopic images, obtained from gas-based deposition methods. Also, an increased short-circuit current density suggests that the interfacial resistance for the injection of electrons from the porous nanoparticle network to TCO was reduced. Further, the theory of electron recombination at the TCO/compact layer/electrolyte interface was developed and used to explain the improved DSSC performance with an ALD HfO₂ compact layer.     

Solution-processed inverted organic solar cell using V2O5 hole transport layer and vacuum free EGaIn anode

In this study, the sol–gel V₂O₅ derived by a hydrothermal method to replace the PEDOT:PSS which is a hole transport layer between organic active layer and two different anodes in inverted organic solar cells with TiO₂ as an electron transport layer was investigated. The power conversion efficiencies of inverted organic photovoltaic cells increased approximately twofold with using V₂O₅ instead of PEDOT:PSS on top of the photoactive layer. It was demonstrated that the power conversion efficiencies of inverted organic solar cells prepared with V₂O₅ solution which was diluted with isopropanol in certain proportions by volume were decreased by increasing ratio of isopropanol in total volume. It was reported for the first time that the inverted organic photovoltaic cells prepared using V₂O₅ interlayer and Eutectic Gallium–Indium alloy which was prepared using vacuum free simple brush-painted method and can be used as anode electrode as Ag electrode.     

Polymer solar cells with a TiO2:Ag layer

Photovoltaic (PV) polymer solar cells with Ag and titanium dioxide were fabricated to improve the PV performance by increasing the amount of Ag in TiO₂ (by 3, 5, 7, and 10%). Sol–gel method was used to obtain amorphous or crystalline form of titanium dioxide layers. The solar cells with poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester active layer in two various positions of titanium dioxide in device were tested. Higher PV performance was received by introducing TiO₂ with 5% of Ag between ITO and PEDOT:PSS in device and by heating the layer at 130 °C. The viscosity of applied PEDOT:PSS strongly influences the values of power conversion efficiency of the constructed polymer devices with titanium dioxide.     

Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer

In this work, the performance of p–i–n hydrogenated amorphous silicon thin film solar cells by adopting n-type silicon carbide (n-SiC_x:H) layer was investigated. By varying CH₄/SiH₄ gas flow ratio, refractive index and electrical conductivity of n-SiC_x:H thin films were changed in the range of 3.4 to 3.8 and 1.48E?5 to 1.24 S/cm, respectively. Compared with solar cells with n-Si:H/Ag configuration, short-circuit current density (J _sc ) of solar cells with n-SiC_x:H/Ag configuration was improved up to 8.4%, which was comparable with that of solar cells with n-Si:H/ZnO/Ag configuration. Improved J _sc was related with enhanced spectral response at long wavelength of 500–800 nm. It was supposed that the decreased refractive index of n-SiC_x:H layer resulted in the increased back reflectance, which contributed to the improved J _sc. Our experiments demonstrated that n-SiC_x:H thin films were attractive choice because they functioned both as n-layer and interlayer in back reflector, and their deposition method was compatible with preparation process of solar cells.     

Dependence of photovoltaic performance of solvothermally prepared CdS/CdTe solar cells on morphology and thickness of window and absorber layers

In the present work a new strategy for straightforward fabrication of CdS/CdTe solar cells, containing CdS nanowires and nanoparticles as a window layer and CdTe nanoparticles and microparticles as an absorber layer, are reported. CdS and CdTe nanostructures were synthesized by solvothermal method. X-ray diffraction analysis revealed that highly pure and crystallized CdS nanowires and nanoparticles with hexagonal structure and CdTe nanoparticles with cubic structure were obtained. Atomic force microscope and field emission scanning electron microscope images showed that CdS nanowires with length of several μm and average diameter of 35 nm, CdS nanoparticles with average particle size of 32 nm and CdTe nanoparticles with average particle size of 43 nm, were uniformly coated on the substrate by the homemade formulated pastes. Based on ultraviolet–visible absorption spectra, the band gap energies of CdS nanowires, CdS nanoparticles and CdTe nanoparticles were calculated 2.80, 2.65 and 1.64 eV, respectively. It was found that, the photovoltaic performance of the solar cells depends on thickness of CdTe and CdS films, reaching a maximum at a specific value of 6 μm and 225 nm, respectively. For such cell made of CdS nanowires and CdTe nanoparticles the V_OC, J_SC, fill factor and power conversion efficiency were calculated 0.62 V, 6.82 mA/cm², 59.7 and 2.53 %, respectively. Moreover, photovoltaic characteristics of the solar cells were dependent on CdTe and CdS morphologies. CdS/CdTe solar cell made of CdTe and CdS nanoparticles had the highest cell efficiency (i.e., 2.73 %) amongst all fabricated solar cells. The presented strategy would open up new concept for fabrication of low-cost CdS/CdTe solar cells due to employment of a simple chemical route rather than the vapor phase methods.     

Efficiency enhancement of polymer solar cells with Ag nanoparticles incorporated into PEDOT:PSS layer

In this study, large-sized silver nanoparticles (Ag NPs) (average size: 80 nm) have been introduced into the anodic buffer poly-(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer (thickness: about 55 nm) of poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester bulk heterojunction polymer solar cells. The results showed that the short-circuit current density can increase from 8.73 to 11.36 mA/cm², and power conversion efficiency increases from 2.28 to 2.65 % when 0.1 wt% Ag NPs was incorporated in PEDOT:PSS layer, corresponding to an efficiency improvement of 16.2 %. Absorption spectrums of the active layers indicate that large-sized Ag NPs have no clear contribution to optical absorption improvement. By measuring the conductivity of PEDOT:PSS films without and with Ag NPs and analyzing device structure of this polymer solar cell, it was founded that the improvements in power conversion efficiency was originated from higher conductivity of PEDOT:PSS layer incorporated with Ag NPs and the shorter routes for holes to travel to the anode.     

Transmittance enhancement of micro-grating structure sapphire with high-refractive index Y2O3 layer

The theoretical analysis of micro-grating structure sapphire (sapphire MGS) with Y₂O₃ layer using the finite-difference time-domain method is presented. The results show that the total transmittance and reflectance of Y₂O₃/sapphire MGS have a close relationship with the thickness of Y₂O₃ layer, where about 300 nm is the ideal thickness. According to the simulant results, 300 and 600 nm of thicknesses of Y₂O₃ layer deposited onto sapphire MGS substrate by reactive magnetron sputtering method are studied experimentally. The experimental results agree well with the calculated data and further have better optical properties because of the rough surface of Y₂O₃ layer. It illustrates that the 300-nm Y₂O₃/sapphire MGS exhibits the best increase in the total transmittance and diffuse transmittance due to the greater graded refractive index profile than sapphire MGS. The results of this paper have potential applications in solar cells and diffraction grating.     

Nanostructured solar cell by spray pyrolysis: Effect of titania barrier layer on the cell performance

ZnO nanostructured solar cells with CuInS₂ absorber layer were prepared by chemical spray method. In order to increase chemical stability of ZnO nanorods against dissolution in the next steps of the cell preparation, and reduce the electrical shorts between the front and back contacts, an amorphous TiO₂ layer was deposited on ZnO nanorods by ALD or sol-gel spray technique. The thicknesses of the layer (≤ 5 nm by spray and ≤ 1 nm by ALD), which did not impede the collection of carriers, were determined. TiO₂ thicknesses above these optimal values led to s-shaped I-V curves, causing the decrease in solar cell efficiency from 2.2 to 0.7% due to the formation of an additional junction blocking charge carrier transport in the device under forward bias. Nanostructured cells suffered from somewhat higher interface recombination but showed still two times higher current densities (~ 10 mA/cm²) than the planar devices did.     

CdTe-CdS solar cells — Production in a new baseline and investigation of material properties

In this paper, we describe our new baseline for CSS-CdTe-CdS solar cells on 10 × 10 cm² substrates. The deposition of the p-n junction and all the following steps were performed at the Institut für Festkörperphysik (IFK) in Jena. Using the new baseline, we are already able to produce solar cells with similar properties as commercial ones. In the batch type process, all manufacturing steps can be investigated separately. We employ Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and external quantum efficiency (EQE) measurements to characterise the structure of the bulk materials and interfaces. It is demonstrated that by RBS the front contact becomes accessible for thinned CdTe films. At the back contact, RBS spectra show a tellurium accumulation which is due to etching. This tellurium rich layer is confirmed by XRD with Rietveld refinement. The intermixing at the CdS-CdTe interface caused by the activation step is quantified by a bandgap determination based on EQE measurements. From the bandgap energy of the CdTe_1 − xS_x compound, we calculated the sulphur fraction x at the interface. XRD measurements imply that the activation step induces a (111) texture in CdTe. With regard to an improved manufacturing process, our cells are compared to industrial cells produced by Antec Solar Energy.     

Efficient bulk heterojunction solar cells based on D–A copolymers as electron donors and PC70BM as electron acceptor

Two low band gap conjugated polymers P1 (alternating phenylenevinylene containing thiophene and pyrrole rings) and P2 (alternating phenylenevinylene with dithenyl (thienothiadiazole) segments) having optical band gap 1.65 eV and 1.74 eV, respectively, were used as electron donor along with the PC₇₀BM as electron acceptor for the fabrication of bulk heterojunction solar cells. The power conversion efficiency (PCE) of BHJ devices based on P1:PC₇₀BM and P2:PC₇₀BM cast from THF solvent is about 2.84% and 2.34%, respectively, which is higher than the BHJ based on PCBM as electron acceptor. We have investigated the effect of mixed (1-chloronaphthalene (CN)/THF) solvent, modification of PEDOT:PSS layer and inserting of TiO₂ layer, on the photovoltaic performance of polymer solar cell. We have achieved power conversion efficiency of 5.07% for the polymer solar cells having structure ITO/PEDOT:PSS (modified)/P1:PC₇₀BM (CN/THF cast)/TiO₂/Al. The effect of solvent used for spin coating, modification of PEDOT:PSS layer and inclusion of TiO₂ layer has been discussed in detail.     

CuGaSe2 solar cells using atomic layer deposited Zn(O,S) and (Zn,Mg)O buffer layers

The band gap of Zn(O,S) and (Zn,Mg)O buffer layers are varied with the objective of changing the conduction band alignment at the buffer layer/CuGaSe₂ interface. To achieve this, alternative buffer layers are deposited using atomic layer deposition. The optimal compositions for CuGaSe₂ solar cells are found to be close to the same for (Zn,Mg)O and the same for Zn(O,S) as in the CuIn_0.7Ga_0.3Se₂ solar cell case. At the optimal compositions the solar cell conversion efficiency for (Zn,Mg)O buffer layers is 6.2% and for Zn(O,S) buffer layers it is 3.9% compared to the CdS reference cells which have 5-8% efficiency.     

Effect of solution processed salt layers on the device performances of polymer solar cells

We report the solution processed Li salt layers (i.e. LiBF₄, and LiTFSI) in poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methylester (PCBM) bulk heterojunction solar cells, which facilitate electron injection at the interface between active layer and Al electrode. The Li salt layers are deposited on top of P3HT:PCBM active layer by simple drop-casting combined with controlled evaporation process. The solar cells employing Li salt layers exhibit the increase of short-circuit current (J_SC) and fill factor (FF) by 10% when compared with devices without such an injection layer, resulting in about 28% increase of power conversion efficiency. The effect of Li salt layers on the device performances is investigated with current–voltage (J–V) characteristics and impedance spectroscopy measurements.     

Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

The effect of ultrasonic waves on the spectral sensitivity of solar energy converters based on AlGaAs/GaAs heterostructures has been studied. Ultrasonic treatment of a zinc-doped graded-gap Al_xGa_1−x As film leads to the formation of a surface layer sensitive to electromagnetic radiation in the wavelength range λ < 0.551 μm. It is established that this layer is formed as a result of the acoustostimulated inward diffusion of zinc from the surface to the bulk of the graded-gap layer. The observed expansion of the short-wavelength sensitivity range and an increase in the efficiency of nonequilibrium charge carrier collection in AlGaAs/GaAs solar cells are due to improvement of the crystal defect structure and the dopant redistribution under the action of ultrasound.     

Influence of anode roughness and buffer layer nature on organic solar cells performance

Fluorine doped transparent conductive tin oxide thin films (FTO) of different surface roughness have been deposited by chemical vapor deposition (FTO_SOL), classical chemical spray pyrolysis (FTO_CSP), and spray pyrolysis onto heated substrates using infra red irradiation (FTO_IRSP); the three deposition methods inducing different surface roughness. It was found that the different FTOs presented similar electrical properties while their structural, morphological and optical properties were related to surface properties. These FTO films have been used as anode in multilayer organic solar cells, based on coupled donor/acceptor-copper phthalocyanine/fullerene. To improve solar cell performance, buffer layers of different natures have been tried at the anode/organic material interface. Deposition of a thin molybdenum oxide film onto FTO smooth films afforded reproducible devices with performance similar to those obtained with indium tin oxide anodes. However, cell efficiency decreased as FTO surface roughness increased. The degree of degradation depended on the nature of the buffer layer. We show that it is necessary to use buffer layer material that allows consistency and completeness of the electrode coverage.