Thermodynamic Properties of YbRhO<Subscript>3</Subscript> and Phase Relations in the System Yb-Rh-O

Thermodynamic properties of the ternary oxide YbRhO₃ were determined by using a solid-state electrochemical cell incorporating calcia-stabilized zirconia as the solid electrolyte in the temperature range from 900 to 1300 K. The standard Gibbs energy of formation of YbRhO₃ from component binary oxides Yb₂O₃ with C-rare earth type structure and Rh₂O₃ with orthorhombic structure can be represented by the equation,

$$\Delta_{\text{f(ox)}} G^{\text{o}} ( \pm 130)/{\text{J/mol}} = - 43164 + 3.436\,({\text{T/K}}).$$

Standard enthalpy of formation of YbRhO₃ from elements in their normal standard states is ?1153.18(±3) kJ/mol and its standard entropy is 100.93(±0.6) J/K/mol at 298.15 K. The decomposition temperature of YbRhO₃ is 1671(±3) K in pure oxygen, 1566(±3) K in air and 1047(±3) K at an oxygen partial pressure of \(\left( {P_{{{\text{O}}_{2} }} /{\text{P}}^{\text{o}} } \right) = 10^{ - 6}\), where P^o = 0.1 MPa is the standard pressure. Decomposition temperature was confirmed by DTA/TGA. Phase diagrams for the system Yb-Rh-O are computed using the thermodynamic data.

     

Development of x-ray mask fabrication process using w-sputtering

Properties of DC magnetron sputter-deposited W and WNx absorber films were investigated for x-ray mask applications. Low stress film (5 x 10⁸ dyne/cm² tensile stress) is difficult to obtain with pure Ar gas as the film stress changes from highly compressive to highly tensile with pressure change. The variation of stress with pressure is significantly reduced with N₂/Ar mixture gas, and a reasonable tensile stress and stress stability were obtained with 5% N₂ at 3.5 mTorr. Film density decreases with increasing sputtering pressure and N₂/Ar + N₂ ratio. XRD patterns for films deposited at 3.5 mTorr show crystalline α-W structure for Ar sputtered film but amorphous structure for 5% N₂-sputtered film. Surface smoothness is very good at 5% N₂ but further increase of N₂/Ar+N₂ ratio results in a surface roughening and this is also confirmed by TEM analysis. At this sputtering condition (5% N₂, 3.5 mTorr), film stress stability during air-exposure and annealing was also superior, suggesting a optimum process condition for W-based absorber films.     

Pulsed laser deposition of anatase and rutile TiO2 thin films

The investigation deals with the preparation of both anatase and rutile thin films from a sintered rutile target of TiO₂ by pulsed laser ablation technique. Microstructural characterization of the sintered target was carried out using X-ray diffraction and AC impedance spectroscopy. Thin films of titania were deposited on (111) Si substrates at 673 K in the laser energy range 200-600 mJ/pulse at two different conditions: (i) deposition at 3.5 × 10^− 5 mbar of oxygen, and (ii) deposition at an oxygen partial pressure of 0.1 mbar. The influence of laser energy and oxygen addition on the film growth has been studied. X-ray diffraction analysis of the films indicated that the films are single phasic and nano crystalline. Titania films deposited in the energy range 200-600 mJ/pulse at a base pressure of 5 × 10^− 5 mbar are rutile with particle sizes in the range 5-10 nm, whereas the films formed at the oxygen partial pressure 0.1 mbar are anatase with particle sizes in the range 10-24 nm. In addition, at higher energies, a significant amount of particulates of titania are found on the surface of the films. The change in the microstructural features of the films as a function of laser energy and oxygen addition is discussed in relation with the interaction of the ablated species with the background gas.     

Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition

An amorphous Bi₄Ti₃O₁₂ phase was formed when films were grown at <400 °C while Bi₂Ti₂O₇ and Bi₂Ti₄O₁₁ transient phases were developed when films were grown at 400–500 and 600 °C, respectively. A homogeneous Bi₄Ti₃O₁₂ crystalline phase was formed in the film grown at 700 °C. The high leakage current density (5 × 10^?7 A cm^?2 at 0.2 MV cm^?1) of the film grown at 300 °C under 100 mTorr oxygen partial pressure (OPP) decreased to 2 × 10^?8 A cm^?2 for the film grown at 200 mTorr OPP, due to the decreased number of intrinsic oxygen vacancies. However, when OPP exceeded 200 mTorr, the electrical properties were deteriorated due to the formation of oxygen interstitial ions. Mn-doping at a suitable level improved the electrical properties of the films by producing extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies. Schottky emission was suggested as the leakage current mechanism of the Bi₄Ti₃O₁₂ film.     

Preparation of ZrO<Subscript>2</Subscript> dielectric layers by subsequent oxidation after Zr film deposition with negative substrate bias voltage

ZrO₂ dielectric layers were prepared by a two-step process, a deposition of pure Zr film with and without a negative substrate bias voltage and a subsequent oxidation of the Zr films. We focused on the effect of the negative substrate bias voltage on the Zr film deposition and the subsequent oxidation of the Zr films. As a result, the Zr film deposited at the substrate bias voltage of −50 V (Vs = −50 V) was found to have a high intensity peak of Zr (100) and a uniform and smooth surface. From the capacitance-voltage and current-voltage measurements of the ZrO₂ films, a high dielectric constant of 21 and the equivalent oxide thickness (EOT) of 2.6 nm were obtained on the oxidation layer of the Zr film deposited at Vs = −50 V. On the other hand, a low dielectric constant of 15 and the EOT of 3.6 nm was obtained on that of the Zr film deposited at Vs = 0 V. The leakage current density of the ZrO₂ film (Vs = −50 V) was 5.69×10⁻⁴ A/cm², and this value was much lower than the 1.21×10⁻⁴ A/cm² for the ZrO₂ film (Vs = 0 V). It was found that the two-step process by subsequent oxidation after film deposition using a negative substrate bias voltage is useful for obtaining high-quality dielectric layers.     

Reaction Time and Film Thickness Effects on Phase Formation and Optical Properties of Solution Processed Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> Thin Films

Copper-zinc-tin-sulfide (Cu₂ZnSnS₄ or CZTS) is a promising p-type semiconductor material as absorber layer in thin film solar cells. The sulfides of copper and tin as well as zinc and sulfur powders were dissolved in hydrazine. The effect of chemical reaction between precursor species, at room temperature, was assessed for 6 to 22 h. For 22 h reaction time, the effect of spin coated film thickness on the resulting composition, after annealing under N₂ flow at 500 °C for 1 h, was investigated. The morphology, composition, and optical properties of the annealed films were determined by means of x-ray diffraction, scanning electron microscope, and spectrophotometer studies. It was found that, for less than optimal reaction time of 22 h or film thickness below 1.2 µm, other ternary phases namely Cu₄SnS₄, Cu₅Sn₂S₇, and ZnS co-exist in different proportions besides CZTS. Formation of phase-pure CZTS films also exhibited a tendency to minimize film cracking during annealing. Depending on the processing conditions, the band gap (E _g) values were determined to be in the range of 1.55 to 1.97 eV. For phase-pure annealed CZTS film, an increase in the E _g value may be attributed to quantum confinement effect due to small crystallite size.     

VO<Subscript>2</Subscript> thin films: Defect mediation in room temperature ferromagnetic switching characteristics

Vanadium dioxide (VO₂) has tremendous potential in multifunctional device applications related to spintronics, switching, and magnetic recording. We have discovered that the room temperature ferromagnetism (RTFM) in undoped vanadium oxide epitaxial films can be switched on and off by altering the cooling ambient conditions which exhibit a sharp electrical transition at 341 K. By correlating the structural and ferromagnetic properties in VO₂, we envisage the potential for creation of novel multifunctional solid-state devices. High-quality epitaxial VO₂ thin films were grown on c-sapphire (0001) substrates, under different ambient conditions via the domain matching epitaxy paradigm. The observed RTFM has its origin in the valence charge defects with unpaired electrons in V⁺³ in VO₂ thin films, where the concentration of the defects could be varied with oxygen partial pressure. The VO₂ films-with a high ferro- to paramagnetic transition (Curie) temperature around 500 K estimated by fitting the magnetization data to the Bloch’s T^3/2 law, a saturated magnetization of 18 emu/cm³, and with a finite coercivity of 40 Oe at 300 K-can be useful for integrated smart sensors operable at room temperature.     

Epitaxial SrRuO3 thin films deposited on SrO buffered-Si(001) substrates for ferroelectric Pb(Zr0.2Ti0.8)O3 thin films

SrRuO₃ thin film electrodes are epitaxially grown on SrO buffered-Si(001) substrates by pulsed laser deposition. The optimum conditions of the SrO buffer layers for epitaxial SrRuO₃ films are a deposition temperature of 700 °C, deposition pressure of 1 × 10^?6 Torr, and thickness of 6 nm. The 100 nm thick-SrRuO₃ bottom electrodes deposited above 650 °C on SrO buffered-Si (001) substrates have a rms (root mean square) roughness of approximately 5.0 Å and a resistivity of 1700 µω-cm, exhibiting an epitaxial relationship. The 100 nm thick-Pb(Zr_0.2Ti_0.8)O₃ thin films deposited at 575 °C have a (00l) preferred orientation and exhibit 2P_r of 40 µC/cm², E_c of 100 kV/cm, and leakage current of about 1 × 10^?7 A/cm² at 1 V. The silicon oxide phase which presents within PZT and SrRuO₃ films, influences the crystallinity of the PZT films and the resistivity of the SrRuO₃ electrodes.     

Heterojunction Fe2O3-SnO2 Nanostructured Photoanode for Efficient Photoelectrochemical Water Splitting

Hierarchically organized nanostructures were fabricated by growing SnO₂ nanoparticles on a fluorine-doped tin oxide/glass substrate via a laser ablation method. Cauliflower-like clusters consisting of agglomerated nanoparticles were deposited and aligned with respect to the substrate with a large internal surface area and open channels of pores. The morphological changes of SnO₂ nanostructured films were investigated as a function of the oxygen working pressure in the range of 100–500 mTorr. A nanostructured scaffold prepared at an oxygen working pressure of 100 mTorr exhibited the best photoelectrochemical (PEC) performance. A Ti:Fe₂O₃-SnO₂ nanostructured photoanode showed the photocurrent that was 34% larger than that of a Ti:Fe₂O₃ flat photoanode when the amount of Ti:Fe₂O₃ sensitizer was identical for the two photoanodes. The larger surface area and longer electron lifetime of the Ti:Fe₂O₃-SnO₂ nanostructured photoanode explains its improved PEC performance.     

Fabrication of GdBa2Cu3O7−x films by TFA-MOD process

GdBa₂Cu₃O_7−x (GdBCO) films have been deposited on LaAlO₃ (LAO) (0 0 l) single crystal substrates by trifluoroacetate metal organic deposition (TFA-MOD) method. The effects of oxygen partial pressure and firing temperature on microstructure and critical properties of GdBCO films were discussed. The phase formation, texture and microstructure of films were characterized by X-ray diffraction and scanning electron microscopy. The oxygen partial pressure was considered to play a great role for formation of impurity phase and a-axis oriented grains. The degree of c-axis orientation was also influenced by the firing temperature. The highly c-axis oriented GdBCO film obtained at 815 °C under an oxygen partial pressure of 100 ppm has a high performance critical current density J_c (77 K, self field) = 1.8 MA/cm².     

Electrochemical Behavior Assessment of Micro- and Nano-Grained Commercial Pure Titanium in H<Subscript>2</Subscript>SO<Subscript>4</Subscript> Solutions

In this study, the electrochemical behavior of commercial pure titanium with both coarse-grained (annealed sample with the average grain size of about 45 µm) and nano-grained microstructure was compared by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), and Mott-Schottky analysis. Nano-grained Ti, which typically has a grain size of about 90 nm, is successfully made by six-cycle accumulative roll-bonding process at room temperature. Potentiodynamic polarization plots and impedance measurements revealed that as a result of grain refinement, the passive behavior of the nano-grained sample was improved compared to that of annealed pure Ti in H₂SO₄ solutions. Mott-Schottky analysis indicated that the passive films behaved as n-type semiconductors in H₂SO₄ solutions and grain refinement did not change the semiconductor type of passive films. Also, Mott-Schottky analysis showed that the donor densities decreased as the grain size of the samples reduced. Finally, all electrochemical tests showed that the electrochemical behavior of the nano-grained sample was improved compared to that of annealed pure Ti, mainly due to the formation of thicker and less defective oxide film.     

Fabricating TiO2 Photocatalysts by rf Reactive Magnetron Sputtering at Varied Oxygen Partial Pressures

Titanium dioxide (TiO₂) thin films were fabricated onto non-alkali glass substrates by rf reactive magnetron sputtering at room temperature using Ti-metal target at varied oxygen partial pressure [O₂/(Ar + O₂)]. The sputtering deposition was performed under an rf power of 200 W. The target to substrate distance was kept at 80 mm, and the total gas pressure was 10 mTorr after 2 h of deposition. It was found that the crystalline structure, surface morphology, and photocatalytic activities of the TiO₂ thin films were affected by the oxygen partial pressure during deposition. The XRD patterns exhibited a broad-hump shape indicating the amorphous structure of TiO₂ thin films. The thin films deposited at a relatively high value of oxygen partial pressure (70%) had a good photo-induced decomposition of methylene blue (MB), photo-induced hydrophilicity, and had a small grain size.     

Experimental Study and Thermodynamic Re-optimization of the FeO-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> System

Phase equilibria and thermodynamic data in the FeO-Fe₂O₃-SiO₂ system were critically reviewed. New experiments were undertaken to resolve discrepancies found in previous data. The liquid oxide/slag phase was described using the modified quasichemical model. New optimized parameters of the thermodynamic models for the Gibbs energies of slag and other phases in the selected system were obtained. The new parameters reproduce all available phase equilibria and thermodynamic data within the experimental error limits from 298 K (25 °C) to above the liquidus temperatures at all compositions and oxygen partial pressures from metal saturation to 1 atm of O₂. This study was carried out as part of the development of a self-consistent thermodynamic database for the Al-Ca-Cu-Fe-Mg-Si-O-S multi-component system.     

Room temperature ferroelectric property of BiMnO<Subscript>3</Subscript> thin film with double SrTiO<Subscript>3</Subscript> buffer layers on Pt/Ti/SiO<Subscript>2</Subscript>/Si substrate

We fabricated high quality BiMnO₃ thin films with double SrTiO₃ buffer layers on Pt/Ti/SiO₂/Si substrates, in which the SrTiO₃ buffer layers were used for the reduction of leakage current in BiMnO₃ thin films. We chose an SrTiO₃ thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO₃ thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO₃ thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm².     

Effects of defects generated in ALD TiO<Subscript>2</Subscript> films on electrical properties and interfacial reaction in TiO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/Si system upon annealing in vacuum

Thin TiO₂ layers grown at 130°C on SiO₂-coated Si substrates by atomic layer deposition (ALD) using TTIP and H₂O as precursors were annealed, and the effects of the annealing temperature on the resulting electrical properties of TiO₂ and the interface properties between a Pt electrode and TiO₂ were examined using transmission line model (TLM) structures. The as-deposited TiO₂ thin film had an amorphous structure with OH groups and a high resistivity of 6×10³Ω-cm. Vacuum annealing at 700 °C transformed the amorphous film into an anatase structure and reduced its resistivity to 0.04Ω-cm. In addition, the vacuum-annealing of the TiO₂/SiO₂ structure at 700°C produced free silicon at the TiO₂-SiO₂ interface as a result of the reaction between the Ti interstitials and SiO₂. The SiO₂ formed on the TiO₂ surface caused a Schottky contact, which was characterized by the TLM method. The use of the TLM method enabled the accurate measurement of the resistivity of the vacuum-annealed TiO₂ films and the characterization of the Schottky contacts of the metal electrode to the TiO₂.     

Dielectric properties of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films deposited onto Ti and TiO<Subscript>2</Subscript> layer

The present study describes the dielectric properties of RF sputtered Ta₂O₅ thin films as a function of the buffer layer and annealing condition. The buffer layers were Ti or TiO₂. And the thin film was annealed in various conditions. The X-ray pattern results showed that the phase of the RF sputtered Ta₂O₅ thin films was amorphous and this state was kept stable to RTA (rapid thermal annealing) even at 700°C. Measurements of the electrical and dielectric properties of the reactive sputtered Ta₂O₅ fabricated in two simple metal insulator semiconductor (MIS) structures, (Cu/Ta₂O₅/Ti/Si/Cu and Cu/Ta₂O₅/TiO₂/Si/Cu) indicated that the amorphous Ta₂O₅ grown on Ti possesses a high dielectric constant (30–70) and high leakage current (10⁻¹–10⁻⁴ A/cm²), whereas a relatively low dielectric constant (−10) and low leakage current (−10⁻¹⁰ A/cm²) were observed in the amorphous Ta₂O₅ deposited on the TiO₂ buffer layer. In addition, the leakage current mechanisms of the two amorphous Ta₂O₅ thin films were investigated by plotting the relation of current density (J) vs. applied electric field (E). The Ta₂O₅/Ti film exhibited three dominant conduction mechanism regimes contributed by the Ohmic emission at low electrical field, by the Schottky emission at intermediate field and by the Poole-Frenkel emission at high field. In the case of Ta₂O₅/TiO₂ film, the two conduction mechanisms, the Ohmic and Schottky emissions, governed the leakage current density behavior. The conduction mechanisms at various electric fields applied were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated capacitors.     

Microstructure and Electron Energy-Loss Spectroscopy Analysis of Interface Between Cu Substrate and Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Film Formed by Aerosol Deposition Method

Aerosol deposition method is a technique to form dense films by impacting solid particles on a substrate at room temperature. To clarify the bonding mechanism between AD films and substrates, TEM observation and electron energy-loss spectroscopy (EELS) analysis of the interface between Al₂O₃ AD films and Cu substrates were conducted. The Al₂O₃ film was directly adhered to the Cu substrate without any void or crack. The film was composed of randomly oriented α-Al₂O₃ crystal grains of about 10-20 nm large. At the Al₂O₃/Cu interface, the lattice fringes of the film were recognized, and no interfacial layer with nanometer-order thickness could be found. EELS spectra near O-K edge obtained at the interface had the pre-peak feature at around 528 eV. According to previously reported experiments and theoretical calculations, this suggests interactions between Cu and O in Al₂O₃ at the interface. It is inferred that not only the anchoring effect but also the ionic bonding and covalent bonding that originates from the Cu-O interactions contribute to the bonding between Al₂O₃ AD films and Cu substrates.     

Preparation of CuInSe<Subscript>2</Subscript> films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

The CuInSe₂ compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CuInSe₂ films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). It is indicated that ideal stoichiometric CuInSe₂ films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm². Single-phase CuInSe₂ is formed in the selenization process, and it exhibits preferred orientation along the (112) plane. The CuInSe₂ films with smooth surface can be obtained under the pressure of 500 MPa at 60°C.     

Effects of dopant content on optical and electrical properties of In<Subscript>2</Subscript>O<Subscript>3</Subscript>: W transparent conductive films

The In2O3:W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1. 0× 10-3 Ω· cm, highest carrier mobility of 43. 7 cm2. W-1. s-1 and carrier concentration of 1. 4× 1020 cm-3 was obtained at the content of 2. 8 wt. ％. The average optical transmittance from 300 nm to 900 nm reached 87. 6％.     

Dual-Layer Oxidation-Protective Plasma-Sprayed SiC-ZrB<Subscript>2</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-Carbon Nanotube Coating on Graphite

Graphite is used in high-temperature gas-cooled reactors because of its outstanding irradiation performance and corrosion resistance. To restrict its high-temperature (>873 K) oxidation, atmospheric-plasma-sprayed SiC-ZrB₂-Al₂O₃-carbon nanotube (CNT) dual-layer coating was deposited on graphite substrate in this work. The effect of each layer was isolated by processing each component of the coating via spark plasma sintering followed by isothermal kinetic studies. Based on isothermal analysis and the presence of high residual thermal stress in the oxide scale, degradation appeared to be more severe in composites reinforced with CNTs. To avoid the complexity of analysis of composites, the high-temperature activation energy for oxidation was calculated for the single-phase materials only, yielding values of 11.8, 20.5, 43.5, and 4.5 kJ/mol for graphite, SiC, ZrB₂, and CNT, respectively, with increased thermal stability for ZrB₂ and SiC. These results were then used to evaluate the oxidation rate for the composites analytically. This study has broad implications for wider use of dual-layer (SiC-ZrB₂/Al₂O₃) coatings for protecting graphite crucibles even at temperatures above 1073 K.