Melting Properties of Bi2O3-ZnO-Nb2O5-Based Dielectric Ceramics

Cubic-pyrochlore-structure α-phase and low-symmetry-structure ß-phase are the basic phases of dielectric ceramics that are based on Bi₂O₃-ZnO-Nb₂O₅ (BZN). In this paper, the melting behaviors of the α-phase and the ß-phase have been explored using differential thermal analysis and X-ray diffractometry. The results show that BZN-based α-phase is a congruent compound; its congruent melting point is 1190°C. BZN-based ß-phase is an incongruent compound that dissociates to form α-phase and a liquid phase, with an absorption of heat, at its incongruent melting point (peritectic temperature) of 1100°C. Upon cooling, the α-phase reacts with the liquid phase to form the ß-phase via peritectic reaction. Upon quenching, the BZN-based cubic-fluorite phase precipitates from the liquid phase.     

Phase Structure and Dielectric Properties of Bi2O3-ZnO-Nb2O5-Based Dielectric Ceramics

Phase structures and dielectric properties of the compounds with formulas BixZn_2/3Nb_4/3O_4+3x/2 (group M), Bi_xZn_8/3-x Nb_4/3O_6+x/2 (group V), and Bi_xZn_2-2x/3Nb_2-x/3O₇ (group W) have been investigated. Initial results indicate that a cubic pyrochlore structure is the predominant phase of these compound. Most of the measured ceramic specimens exhibit dielectric properties suitable as temperatures-stable and temperature-compensating dielectrics in the capacitor industry. The values of the dielectric constant K are 80-160, while those of the temperature coefficient are–500 to + 160 ppm/°C. The composition limits of the single pyrochlore phase are determined mainly by Bi₂O₃ additives.     

Phase Relations and Dielectric Properties in the Bi2O3–ZnO–Ta2O5 System

Dielectric properties and phase formation of Bi-based pyrochlore ceramics were evaluated for the Bi₂O₃–ZnO–Ta₂O₅ system. The compositional range r Bi₂(Zn_1/3Ta_2/3)₂O₇· (1− r )(Bi_3/2Zn_1/2)(Zn_1/2Ta_3/2)O₇ (0 ≤ r ≤ 1) in Bi₂O₃–ZnO–Ta₂O₅ was investigated to determine the relative solubility of BZT cubic (α-BZT, r = 0) and the pseudo-orthorhombic (β-BZT, r = 1) end members. It was found that extrinsic factors, such as kinetically limited phase formation and bismuth loss, contribute to apparent phase boundaries in addition to thermodynamic stability of each phase. Considering this, the locations of true phase boundaries were r < 0.30 and r ≥ 0.74 for α and β phases, respectively. Dielectric constants between 58 and 80 and low dielectric loss (tan δ < 0.003) were measured for the complete compositional range. The temperature coefficient of capacitance was controlled by composition, which was found to be <30 ppm/°C at the edge of β-phase solid solution. In addition to the excellent dielectric properties these materials can be sintered at low temperatures, which make Bi-based pyrochlores promising candidates for high-frequency electronic applications.     

Defect Structure of Ta2O5

Electrical conductivity, thermoelectric power, and weight change were measured for polycrystalline Ta₂O₅ from 900° to 1400°C. The predominant ionic and electronic defects in this temperature range are oxygen vacancies and electrons. The oxygen-vacancy and electron mobilities are 8.1 × 10³exp (−1.8 eV/ k T) and ∼0.05 cm²/V-s, respectively. At O₂ partial pressures near 1 atm, the ionic-defect concentration is essentially fixed by the presence of lower-valence cation impurities, and the total electrical conductivity is predominantly ionic, whereas at low P _o2's the conductivity is electronic and proportional to P P _o2^−1/6.     

Tape Casting and Dielectric Properties of Zn2Te3O8-Based Ceramics with an Ultra-Low Sintering Temperature

The suitability of dielectric ceramics made of zinc tellurate (Zn₂Te₃O₈) and titanium dioxide (TiO₂) with an ultra-low sintering temperature (650°C) for tape casting and thus for the multimodule technique with Al electrodes was investigated. The properties of the tape before and after sintering as well as the amount of organic additives for the casting process and a thermal analysis of the tape up to 1000°C are reported. In addition, electrodes on a multilayer module made on stacked tapes were prepared using Al paste and postfiring, followed by relative permittivity and loss tangent measurements to verify the electrical performance of the whole structure. The dielectric properties of the stacked module without any electrodes were also measured. The results show that the composition is well suited for the tape process but extra care should be taken especially with the proper sintering temperature for optimized electrical performance.     

Nanopowder Preparation and Dielectric Properties of a Bi2O3–Nb2O5 Binary System Prepared by the High-Energy Ball-Milling Method

The high-energy ball-milling (HEM) method was used to synthesize the compositions of BiNbO₄, Bi₅Nb₃O₁₅, and Bi₃NbO₇ in a Bi₂O₃–Nb₂O₅ binary system. Reagent Bi₂O₃ and Nb₂O₅ were chosen as the starting materials. The X-ray diffraction patterns of the three compositions milled for different times were studied. Only the cubic Bi₃NbO₇ phase, Nb₂O₅, and amorphous matters were observed in powders after being milled for 10 h. After heating at proper temperatures the amorphous matters disappeared and the proleptic phases of BiNbO₄ and Bi₅Nb₃O₁₅ could be obtained. The Scherrer formula was used to calculate the crystal size and the results of nanopowders are between 10 and 20 nm. The scanning electron microscopy photos of Bi₃NbO₇ powders showed drastic aggregation, and the particle size was about 100 nm. The dielectric properties of ceramics sintered from the nanopowders prepared by HEM at 100–1 MHz and the microwave region were measured. Bi₃NbO₇ ceramics showed a good microwave permittivity ɛ_r of about 80 and a Q × f of about 300 at 5 GHz. The triclinic phase of BiNbO₄ ceramics reached its best properties with ɛ_r=24 and Q × f =14 000 GHz at about 8 GHz.     

Microwave Dielectric Properties of 5Li2O–0.583Nb2O5–3.248TiO2 Ceramics with V2O5

The effects of V₂O₅ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O–0.583Nb₂O₅–3.248TiO₂ (LNT) ceramics have been investigated. With addition of low-level doping of V₂O₅ (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V₂O₅ addition. The addition of V₂O₅ does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the excellent microwave dielectric properties of ɛ_r=21.5, Q × f =32 938 GHz, and τ_f=6.1 ppm/°C could be obtained for the 1 wt% V₂O₅-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.     

Ta2O5/Nb2O5 and Y2O3 Co-doped Zirconias for Thermal Barrier Coatings

Zirconia doped with 3.2–4.2 mol% (6–8 wt%) yttria (3–4YSZ) is currently the material of choice for thermal barrier coating topcoats. The present study examines the ZrO₂-Y₂O₃-Ta₂O₅/Nb₂O₅ systems for potential alternative chemistries that would overcome the limitations of the 3–4YSZ. A rationale for choosing specific compositions based on the effect of defect chemistry on the thermal conductivity and phase stability in zirconia-based systems is presented. The results show that it is possible to produce stable (for up to 200 h at 1000°–1500°C), single (tetragonal) or dual (tetragonal + cubic) phase chemistries that have thermal conductivity that is as low (1.8–2.8W/m K) as the 3–4YSZ, a wide range of elastic moduli (150–232 GPa), and a similar mean coefficient of thermal expansion at 1000°C. The chemistries can be plasma sprayed without change in composition or deleterious effects to phase stability. Preliminary burner rig testing results on one of the compositions are also presented.     

Microcracking of Eu2O3=Ta2O5 Bodies

Europium sesquioxide is of interest as a control material for reactors because it has several large-cross-section isotopes which form successively on neutron capture. Pure monoclinic Eu₂O₃ tends to grow large grains during sintering, causing microcracks to develop and leading to anomalous mechanical properties. The effect of doping the Eu₂O₃ with the grain growth suppressant Ta₂O₃ was determined using studies of the elastic properties and internal friction by the sonic resonance technique. Compositions with <3 at.% Ta cation substitution had anomalously low room temperature elastic moduli values and showed a hysteresis on thermal cycling. These specimens also had high internal frictions. The finer-grained specimens which resulted when the dopant level exceeded 3 at.% Ta did not show these anomalous characteristics.     

Characterization and Microwave Dielectric Properties of M2+Nb2O6 Ceramics

This paper details the investigation of the quality factor ( Q ), dielectric permittivity (ɛ_r) and temperature coefficient of resonant frequency (τ_f) of the TE_01δ mode of the columbite binary niobate ceramics, with the formula MNb₂O₆ where M=²⁺ cation, in relation to their degree of sintering, microstructure and phase composition. The ceramics were made from a mixed oxide preparative route and fired over a range of temperatures from 800° to 1400°C, and most formed the columbite structure. A comprehensive study was made of the niobates containing the transition metal cations M=Mn²⁺, Co²⁺, Ni²⁺, Cu²⁺, and Zn²⁺, and the group II metal cations M=Mg²⁺, Ca²⁺, Sr²⁺, and Ba²⁺. All columbite niobates were found to have ɛ_r between 17 and 22 and negative τ_f values between –45 and –76 ppm/°C, and ZnNb₂O₆, MgNb₂O₆, CaNb₂O₆, and CoNb₂O₆ had high Q f values of 84 500, 79 600, 49 600, and 41 700 GHz, respectively. The Q f of MgNb₂O₆ was found to rise to over 95 000 GHz when heated at 1300°C for 50 h.     

Microwave Dielectric Properties of Low Firing Temperature Bi2W2O9 Ceramics

Phase stability, sinterability, and microwave dielectric properties of Bi₂W₂O₉ ceramics and their cofireability with Ag, Cu, and Au electrodes have been investigated. Single-phase Bi₂W₂O₉ powder was synthesized by solid-state reaction in air at 800°C for 3 days. X-ray powder diffraction data show Bi₂W₂O₉ to have an orthorhombic crystal structure described by the noncentrosymmetric space group Pna 2₁, with lattice parameters a =5.4401(8), b =5.4191(8), c =23.713(4) Å. Ceramics fired at temperatures up to 865°C remain single-phase but above this temperature ferroelectric Bi₂WO₆ appears as a secondary phase. The measured relative permittivity of Bi₂W₂O₉ ceramics increases continuously from 28.6 to 40.7 for compacts fired between 860° and 885°C. The bulk relative permittivity of Bi₂W₂O₉ corrected for porosity was calculated as 41.3. Bi₂W₂O₉ ceramics fired up to 875°C exhibit moderate quality factors, Q × f _r, ∼7500–7700 GHz and negative temperature coefficient of resonant frequency, ∼−54 to −63 ppm/°C. Chemical compatibility experiments show Bi₂W₂O₉ ceramics to react with both Ag and Cu electrodes, but to form good contacts with Au electrodes.     

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

The formation process and microwave dielectric properties of the Mg₂V₂O₇ ceramics were investigated. The MgV₂O₆ phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg₂V₂O₇ phase. Finally, this monoclinic Mg₂V₂O₇ phase was changed to a triclinic Mg₂V₂O₇ phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg₂V₂O₇ ceramics. In particular, the Mg₂V₂O₇ ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛ_r=10.5, Q × f =58 275 GHz, and τ_f=−26.9 ppm/°C.     

Electronic Conductivity and Related Properties of Amorphous and Crystallized V2O5-Based Glasses

Crystallization of V₂O₃ from V₂O₃P₂O₃, glasses containing 0 to 9 mol% B₂O₃, during heat treatment in the range 220° to 410°C, caused progressive micro structural changes which dramatically affected the electronic conductivity (γ), the activation energy for conduction ( W ), and the resistance to chemical attack. All compositions were ≊83% crystalline after heating to 410°C. As a result, the values of γ and W were almost identical to those observed for pure polycrystalline V₂O₅.     

Influence of V2O5 Additions to 5Li2O–1Nb2O5–5TiO2 Ceramics on Sintering Temperature and Microwave Dielectric Properties

The effects of the addition of V₂O₅ on the sintering behavior, microstructure, and microwave dielectric properties of 5Li₂O–1Nb₂O₅–5TiO₂ (LNT) ceramics have been investigated. With low-level doping of V₂O₅ (≤3 wt%), the microstructure of the LNT ceramic changed from a special two-level intergrowth structure into a two-phase composite structure with separate grains. And the sintering temperature of the LNT ceramics could be lowered to around 900°C by adding a small amount of V₂O₅ without much degradation in microwave dielectric properties. Typically, better microwave dielectric properties of ɛ_r=41.7, Q × f =7820 GHz, and τ _f =45 ppm/°C could be obtained for the 1 wt% V₂O₅-doped ceramics sintered at 900°C.     

Formation and Transformation of Solid Solutions in the System Nb2O5–Ta2O5

In the system Nb₂O₅–Ta₂O₅, a continuous series of δ-Nb₂O₅ (δ-Ta₂O₅) solid solutions with a hexagonal cell is formed while heating amorphous materials prepared by the simultaneous hydrolysis of niobium and tantalum alkoxides. The lattice parameters a and c change linearly with increasing Ta₂O₅ content; the former value increases from 0.3604 to 0.3620 nm, and the latter value decreases from 0.3923 to 0.3883 nm. They transform to γ-Nb₂O₅ (β-Ta₂O₅) solid solutions with an orthorhombic cell at higher temperatures. The changes in lattice parameters a and c as functions of composition are the same as those of hexagonal solid solutions, whereas parameter b is relatively constant.     

Microwave Dielectric Properties and Chemical Resistance of Low-Temperature-Sintered CaZrB2O6 Ceramics

Dolomite-type borate ceramics consisting of CaZrB₂O₆ were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi₂O₃–CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB₂O₆ ceramics with 3 wt% Bi₂O₃–CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛ_r=10.55, Q × f =87,350 GHz, and τ_f=+2 ppm/°C. The chemical resistance test result showed that both CaZrB₂O₆- and Bi₂O₃–CuO-added CaZrB₂O₆ ceramics were durable in basic solution but were degraded in acid solution.     

Formation and Transformation of δ-Ta2O5 Solid Solution in the System Ta2O5-Al2O3

In the system Ta₂O₃-Al₂O₅ solid solutions of metastable δ-Ta₂O₅ (hexagonal) are formed up to 50 mol% Al₂O₃ from amorphous materials prepared by the simultaneous hydrolysis of tantalum and aluminum alkoxides. The values of the lattice parameters decrease linearly with increasing Al₂O₃, content. The to β-Ta₂O₅ (orthorhombic, low-temperature form) transformation occurs at ∼950°C. The solid solution containing 50 mol% Al₂O₃ transforms at 1040° to 1100°C to orthorhombic TaAlO₄. Orthorhombic TaAlO₄ contains octahedral TaO₆ groups in the structure.     

Tailoring the Microwave Dielectric Properties of MgNb2O6 and Mg4Nb2O9 Ceramics

The columbites MgNb₂O₆, MgTa₂O₆, and corundum-type Mg₄Nb₂O₉ ceramics were prepared by the conventional solid-state ceramic route. The structure and microstructure of the sintered samples were investigated by X-ray diffraction and scanning electron microscopic techniques. The microwave dielectric properties of the samples were measured by the resonance method in the frequency range 4–6 GHz. The dielectric properties have been tailored by forming a solid solution between MgNb₂O₆ and MgTa₂O₆ and by the substitution of TiO₂ for Nb₂O₅ in both MgNb₂O₆ and Mg₄Nb₂O₉ ceramics. The Mg(Nb_0.7Ta_1.3)O₆ has ɛ_r=29, Q _u× f =67 800 GHz, and τ_f=0.8 ppm/°C and the MgO–(0.4)Nb₂O₅–(1.5)TiO₂ composition has ɛ_r=34.5, Q _u× f =81 300 GHz, and τ_f=−2 ppm/°C.