Structure–property relationships in electrochromic WO3 films deposited by reactive sputtering

WO_x electrochromic (EC) films deposited by DC magnetron sputtering technique were investigated by XRD and STM measurements. The reversible microstructure changes of the WO_x film between the bleached and colored EC states were revealed. The study indicates that the amorphous as-deposited WO_x film (a-WO_x) is of amorphous microstructure both in bleached and colored states; however, the crystalline WO_x (c-WO_x) is stoichiometric triclinic lattice WO₃ in bleached state (the lattice parameters: a=7.2944 Å, b=7.4855 Å, c=3.7958 Å, α=89.38°, β=90.42°, γ=90.80°), and changes into nonstoichiometric tetragonal lattice WO_2.9 in colored state (a=b=5.336 Å, c=3.788 Å, α=β=γ=90°). The surface morphologies of the colored WO_x films are very different from those of the bleached WO_x films.     

Sol–gel derived CuCoMnOx spinel coatings for solar absorbers: Structural and optical properties

A novel black coloured coating with the composition CuCoMnO_x was prepared using sol–gel synthesis. The coatings were deposited using the dip-coating technique from alcoholic sols based on Mn-acetate and Co- and Cu-chloride precursors. Thermogravimetric analysis showed that xerogels become crystalline at 316°C while X-ray diffraction analysis revealed that the coatings and powders correspond predominantly to CuCoMnO_x spinels. Rutherford back scattering (RBS) and transmission electron microscopic (TEM) studies combined with energy dispersive X-ray spectroscopy (EDXS) measurements confirmed that Cu, Mn and Co are present in the films in stoichiometric ratios close to that in the initial sols. IR spectroscopy has been employed to study the formation of sols by following the changes in the vibrational bands of the acetate groups during both thermal hydrolysis and the ageing of sols to xerogels. It was found that ageing of xerogels was accompanied by the formation of −COO⁻ bridging units, which at 250°C are no longer visible in the IR spectra but substituted by the vibrational modes characteristic for CuCoMnO_x. The solar absorptance (a_s) and thermal emittance (e_T) of the coatings when deposited on an Al-substrate are a_s=0.9 and e_T=0.05, which rank deposited black sol–gel CuCoMnO_x spinels among the promising candidates for spectrally selective absorber coatings for solar collectors and solar facades.     

Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn_1−xGa_xSe₂ polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn_1−xGa_xSe₂ films had a smooth surface morphology and a single chalcopyrite phase.     

Electrochromic properties of NiOxHy thin films

NiO_xH_y films were prepared by DC magnetron sputtering in H₂/O₂ atmosphere. NiO_xH_y coatings with transparency and high electrochromic efficiency were obtained by changing H₂ content. A 60 nm thick NiO_xH_y film with transmittance of 0.57 (as-deposited state), 0.78 (bleached state) and 0.24 (coloured state) at wavelength of 550 nm was deposited in an atmosphere of H₂(60%)+O₂(40%). Analysis of infrared spectra (60002400 cm⁻¹) showed that the absorption peaks for bleached and colored states are associated with free ‘OH’ and OH stretching vibrations, respectively. XPS Ni2p core level spectra of colored NiO_xH_y film exhibited a peak at 856.2±0.2 eV which is attributed to Ni³⁺. Ni2p core level spectra of the bleached and as-deposited films exhibited two peaks at 856.4±0.2 and 854.6±0.2 eV which are attributed to Ni³⁺ and Ni²⁺.     

Sputtered Cd1−xZnxTe films for top junctions in tandem solar cells

Cd_1−xZn_xTe alloy films with 1.6 and 1.7 eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (1 1 1) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically 0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl₂ and ZnCl₂, in dry air or H₂/Ar ambient at 390 °C. The best performance of a Cd_1−xZn_xTe cell (, ) was found for treatment with vapors of the mixed CdCl₂+0.5%ZnCl₂ in an H₂/Ar ambient after pre-annealing at 520 °C in pure H₂/Ar.     

Highly transparent and conductive Zn0.85Mg0.15O:Al thin films prepared by pulsed laser deposition

Zn_1−xMg_xO:Al thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from room temperature to 500 °C by analyzing the structural, optical and electrical properties. The best sample deposited at 250 °C shows the lowest room-temperature resistivity of 5.16×10⁻⁴ Ω cm, and optical transmittance higher than 80% in the visible region. It is observed that the optical band gap decreases from 3.92 to 3.68 eV when the substrate temperature increases from 100 to 500 °C. The probable mechanism is discussed.     

Investigations on ZnxCd1−xO thin films obtained by spray pyrolysis

Zn_xCd_1−xO thin films were prepared on glass substrates by spray pyrolysis technique. The precursor solutions were obtained by varying the concentration of Zn(NO₃)₂·6H₂O and Cd(NO₃)₂·4H₂O in bi-distilled water. The structural properties have been studied using X-ray diffraction spectra. All the structures include the basic compounds, i.e. ZnO and CdO. The orientation and the crystalline phases of the deposited films were specified. With the addition of Zn to the precursor solution, we can observe the preferential orientation of the CdO in the [2 0 0] direction. The electrical measurements were performed using method of four contacts. Thin films transmittances, in the 1.5–4.3 eV range, for different compositions have been measured and the optical gaps have been determined. The variations are explained considering the gaps of the two pure films. The influence of increased Cd concentration in the films on the structural, electrical and optical properties is investigated in this study.     

Optical properties of polycrystalline AgxGa2−xSe2 (0.4x1.6) thin films

Polycrystalline thin films of Ag_xGa_2−xSe₂ (0.4x1.6) were prepared onto cleaned glass substrates by the stacked elemental layer (SEL) deposition technique. All the films were annealed in situ at 300 °C for 15 min. The compositions of the films were measured by energy-dispersive analysis of X-ray (EDAX) method. The structural and optical properties of the films were ascertained by X-ray diffraction (XRD) and UV–VIS–NIR spectrophotometry (photon wavelength ranging from 300 to 2500 nm), respectively. The influence of the composition on the optical properties of the material has been investigated. Microstructural perfection is quite evident from the abrupt descent around specific energy of photons in the transmittance spectra. Stoichiometric or slightly silver-deficient films show optimum electron transition energy and minimum sub-band gap absorption.     

Application of titanium containing amorphous hydrogenated carbon films (a-C:H/Ti) as optical selective solar absorber coatings

A combined PVD/PECVD process for the vacuum deposition of titanium containing amorphous hydrogenated carbon films is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-term stability of the plasma process has been demonstrated. Target poisening has not been observed. We have fabricated optical selective surfaces by the deposition of a-C:H/Ti multilayers onto aluminum substrates. Eventhough we have not optimized layer thicknesses and stoichiometries so far, the experimental results are promising: solar absorptance α_S of 0.876 and thermal emittance _100°C of 0.061 have been achieved yielding an optical selectivity sα_S/_100°C of 14.4. Accelerated aging tests of these coatings have demonstrated their aging stability: the service lifetime is predicted to amount to more than 25 years. Raman spectroscopy has been used to monitor changes in the structure of the aged coatings. Degradation mechanisms are being discussed.     

CuInxGa1−xSe2 thin films prepared by electron beam evaporation

CuIn_xGa_1−xSe₂ bulk compound of three different compositions x=0.75, 0.80 and 0.85 have been prepared using individual elements of copper, indium, gallium and selenium. Thin films of CuIn_xGa_1−xSe₂ have been deposited using the prepared bulk by electron beam evaporation method. The structural studies carried on the deposited films revealed that films annealed at 400 °C are crystalline in nature exhibiting chalcopyrite phase. The position of the (1 1 2) peak in the X-ray diffractogram corresponding to the chalcopyrite phase has been found to be dependent on the percentage of gallium in the films. The composition of the prepared bulk and thin films has been identified using energy dispersive X-ray analysis. The photoluminescence spectra of the CuIn_xGa_1−xSe₂ films exhibited sharp luminescence peaks corresponding to the band gap of the material.     

Electrochromism in NiOx and WOx obtained by spray pyrolysis

Electrochromic films of NiO_x and WO_x were produced by the spray pyrolysis technique. The nickel-oxide-based coatings were obtained from an aqueous solution of nickel nitrate. Those obtained below 300° C did not show any diffraction peak when subjected to X-ray diffraction analysis, and those obtained above 400° C showed a diffraction pattern corresponding to cubic NiO. Films obtained below 300° C showed an electrochromic effect with an electrochromic efficiency of 30 cm²/C.Tungsten-oxide-based coatings were obtained from a solution of H₂WO₄ in aqueous ammonia. The films were grown at 150° C, and they showed a diffraction pattern corresponding to monoclinic WO₃ when subjected to a post-heat treatment at 400° C during ten minutes. The WO_x films showed a noticeable electrochromism under cation insertion, and presented an electrochromic efficiency of 42 cm²/C. Both as-deposited and heat-treated samples showed good electrochromism.     

Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films

Polycrystalline thin films of CuIn_1−xGa_xTe₂ have been deposited by flash evaporation on Corning glass 7059 substrates at T_s=200°C. Hall and resistivity measurements have been carried out down to 77 K. These films are p-type and the variation of the resistivity may be linked to defects, disorder of the material or grain boundaries. The PL spectra of these films after annealing in argon atmosphere at T_a=450°C have showed a broad band emission between 0.98 and 1.12 eV in which the main peak appears at 1.05 eV (at 4.2 K).     

Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution

Electrical and optical characterisation of hydrogenated amorphous silicon–oxygen alloy thin films (a-SiO_x:H, x<2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 °C is presented. The samples were investigated by Fourier transform infrared spectroscopy (FTIR), optical transmission, the constant photocurrent method (CPM), conductivity and steady-state photoconductivity measurements. With increasing oxygen concentration, the Tauc gap increases from 1.69 to 2.73 eV. The sample with an oxygen concentration of 26.2 at% and a reasonably high bandgap of 2.18 eV shows photoconductivity comparable to that of pure a-Si:H films. The Urbach parameter (E₀) increases almost linearly with oxygen concentration whereas the dangling bond defect density is found to be saturating at a value of about 7.1×10¹⁶ cm⁻³. One of the highly alloyed samples with exhibited a detectable photosensitivity.     

Characterization of Pr1−xSrxCo0.8Fe0.2O3−δ (0.2 ≤ x ≤ 0.6) cathode materials for intermediate-temperature solid oxide fuel cells

Cathode materials consisting of Pr_1−xSr_xCo_0.8Fe_0.2O_3−δ (x = 0.2–0.6) were prepared by the sol–gel process for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The samples had an orthorhombic perovskite structure. The electrical conductivities were all higher than 279 S cm⁻¹. The highest conductivity, 1040 S cm⁻¹, was found at 300 °C for the composition x = 0.4. Symmetrical cathodes made of Pr_0.6Sr_0.4Co_0.8Fe_0.2O_3−δ (PSCF)–Ce_0.85Gd_0.15O_1.925 (50:50 by weight) composite powders were screen-printed on GDC electrolyte pellets. The area specific resistance value for the PSCF–GDC cathode was as low as 0.046 Ω cm² at 800 °C. The maximum power densities of a cell using the PSCF–GDC cathode were 520 mW cm⁻², 435 mW cm⁻² and 303 mW cm⁻² at 800 °C, 750 °C and 700 °C, respectively.     

Electrodeposition of CuInxGa1−xSe2 thin films

CuIn_xGa_1−xSe₂ (CIGS) polycrystalline thin films with various Ga to In ratios were grown using a new two-step electrodeposition process. This process involves the electrodeposition of a Cu–Ga precursor film onto a molybdenum substrate, followed by the electrodeposition of a Cu–In–Se thin film. The resulting CuGa/CuInSe bilayer is then annealed at 600°C for 60 min in flowing Argon to form a CIGS thin film. The individual precursor films and subsequent CIGS films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and Auger electron spectroscopy. The as-deposited precursor films were found to be crystalline with a crystal structure matching that of CuGa₂. The annealed bi-layers were found to have the same basic chalcopyrite structure of CuInSe₂, but with peak shifts due to the Ga incorporation. Energy dispersive spectroscopy results show that the observed shifts correlate to the composition of the films.     

Chemical bath deposition and electrochromic properties of NiOx films

Nickel oxide (NiO_x) thin films were prepared by the chemical deposition method (solution growth) on two kinds of substrates: (1) glass and (2) glass/SnO₂ : F. Films were thermally treated at 200°C for 10 min in atmosphere. The texture, microstructure and composition were examined by optical microscopy, X-ray diffraction patterns (XRD) and X-ray photoelectron spectroscopy (XPS) analysis of the surface layer. The films exhibited anode electrochromism. The optical properties of the bleached and colored state were examined with transmittance spectroscopy in the visible region and reflectance FTIR spectroscopy. An electrochromic test device (ECTD), consisting of SnO₂/NiO_x/NaOH–H₂O/SnO₂, was assembled and tested by cyclic voltammetry combined with a simultaneous recording of the change of transparency at λ=670 nm. The coloration efficiency was evaluated to be 24.3 cm²/C. The spontaneous ex-situ change of coloration with time of the colored and bleached NiO_x/SnO₂/glass was also examined.     

Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds

Cu₂Se/In_xSe(x≈1) double layers were prepared by sequentially evaporating In₂Se₃ and Cu₂Se binary compounds at room temperature on glass or Mo-coated glass substrates and CuInSe₂ films were formed by annealing them in a Se atmosphere at 550°C in the same vacuum chamber. The In_xSe thickness was fixed at 1 μm and the Cu₂Se thickness was varied from 0.2 to 0.5 μm. The CuInSe₂ films were single phase and the compositions were Cu-rich when the Cu₂Se thickness was above 0.35 μm. And then, a thin CuIn₃Se₅ layer was formed on the top of the CuInSe₂ film by co-evaporating In₂Se₃ and Se at 550°C. When the thickness of CuIn₃Se₅ layer was about 150 nm, the CuInSe₂ cell showed the active area efficiency of 5.4% with V_oc=286 mV, J_sc=36 mA/cm² and FF=0.52. As the CuIn₃Se₅ thickness increased further, the efficiency decreased.     

Preparation of In2O3:F thin films grown by spray pyrolysis technique

Transparent conducting fluorine doped indium oxide (In₂O₃:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (T_s=300 °C) showed no peaks of In₂O₃:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly [400]. For the 4500 Å thick In₂O₃:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.     

Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

A simple spray method for the preparation of pyrite (FeS₂) thin films has been studied using FeSO₄ and (NH₄)₂S_x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H₂S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10¹⁶–10²⁰ cm⁻³ and a Hall mobility (μ_H) in the range 200–1 cm²/V s. The best electrical properties (p=7×10¹⁶ cm⁻³, μ_H=210 cm²/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO₄ solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.     

High-temperature optical properties and stability of AlxOy–AlNx–Al solar selective absorbing surface prepared by DC magnetron reactive sputtering

Al_xO_y–AlN_x–Al selective absorbing surface was prepared by DC magnetron reactive sputtering with aluminum alloy (LY13)¹ in air and argon. The studies were carried out to access the high-temperature (400°C–600°C) optical properties and stability of the coatings. The coatings were found to withstand heating at 600°C for 30 min in 4.5×10⁻³ Pa vacuum with absorptance 0.94 and emittance 0.07 after annealing. After heating at 450°C for 10 h, the specimen still had good performance whose absorptance and emittance was 0.93 and 0.07, respectively. Auger electron spectroscopy was used to analyse the structure of the solar selective surface before and after annealing.