玻璃微珠表面镀Fe_2O_3彩色薄膜

采用隔离剂法在煅烧温度850℃、保温时间30min条件下对60~80目废碎玻璃粉原料进行煅烧制备微珠样品。制备出的微珠样品经过酸碱处理后,利用化学沉积法在其表面镀Fe_2O_3薄膜。镀膜时以FeCl_3溶液浓度、尿素浓度、反应温度为因素作L_9(3~4)规格正交试验。结果表明,最佳镀膜条件为FeCl_3浓度0.3mol/L,尿素浓度1.5mol/L,反应温度70℃。在该条件下微珠样品镀铁膜后,珠光效果最为明显,所制备的微珠放射光主波长为600nm,呈鲜艳的棕红色。     

二氧化钛包覆空心玻璃微珠的制备及表征

以硫酸钛为钛源,氢氧化钠为沉淀剂,采用非均相沉淀法制得了二氧化钛包覆空心玻璃微珠,用扫描电镜(SEM)和X射线衍射仪等表征了所得产品。分析了不同温度、pH值、煅烧温度、硫酸钛用量等各种工艺参数对产物的调控作用。实验结果表明,反应温度和pH等参数对产物的形貌和结构有重要影响。水解温度等于60℃,pH等于6～7,煅烧温度为700℃时成功地在空心玻璃微珠表面均匀包覆了一层锐钛型二氧化钛。硫酸钛溶液用量为40g时,产物表面包覆厚度大约为0.3μm,隔热效果最好。     

用锰铁渣和废碎玻璃制备泡沫玻璃的工艺研究

以锰铁渣和碎玻璃为主要原料,碳粉为发泡剂,硼砂为助熔剂,采用粉体烧结研制出了泡沫玻璃。对泡沫玻璃的表观密度和吸水率进行了测定。研究结果表明,当锰铁矿渣用量在12.5%~20%时,控制好工艺参数,可以制备出表观密度为407 kg/m3的泡沫玻璃。     

用锰铁渣和废碎玻璃制备泡沫玻璃的工艺研究

以锰铁渣和碎玻璃为主要原料,碳粉为发泡剂,硼砂为助熔剂,采用粉体烧结研制出了泡沫玻璃。对泡沫玻璃的表观密度和吸水率进行了测定。研究结果表明,当锰铁矿渣用量在12.5%~20%时,控制好工艺参数,可以制备出表观密度为407 kg/m3的泡沫玻璃。     

在不同玻璃基板上制备的二氧化钛薄膜光催化活性的评价

采用溶胶-凝胶浸渍提拉法在不同玻璃基板上制备二氧化钛(TiO2)薄膜,并用UV-vis、XRD对其光的吸收性能和晶型结构进行表征.以甲基蓝为目标降解物,使其浸渍吸附在TiO2薄膜上,以高压汞灯为光源,用UV-vis测定甲基蓝的吸光度的变化来评价其光催化活性.结果表明,在相同条件下,以石英玻璃为基板制备的TiO2薄膜的活性最佳.这可能与其锐钛矿含量为100%,热稳定性较好,且表面离子扩散很少有关.     

离子辅助沉积对TiO2薄膜应力的影响

对在离子辅助沉积（IAD）和常规工艺条件下镀制的TiO2薄膜的应力进行了试验研究，并探讨了利用台阶仪测量镀膜前后基板表面曲率的方法。结果表明，当基板温度低于100 ℃时，在离子辅助沉积工艺条件下镀制的TiO2薄膜的应力略大于在常规工艺条件下镀制的薄膜的应力；随着薄膜厚度的增加，TiO2薄膜应力逐渐减小，从125 nm的392 MPa下降到488 nm的30 MPa；离子源阳极电压对薄膜应力影响较大，在100 V时薄膜应力为164 MPa，当电压升高到190 V时，应力下降到75 MPa。     

Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition

ZnO has attracted much attention recently due to its large band gap n-type semiconductor exhibiting, c-orientation, transparent conductivity, optical and luminescence properties[1]. There has been a surge of interest in the growth of high quality thin films of ZnO for its wide applications[2]. Thin films of c-axis oriented zinc oxide have been prepared using various deposition techniques, including sputtering, pulsed laser, ion-beam assisted deposition and atomic layer epitaxy[3]. However, al…     

Preparation of TiO_2 thin film by the LPD method on functionalized organic self-assembled monolayers

In this paper, uniform titania (TiO2) films have been formed at 50℃ on silanol SAMs by the liquid-phase deposition (LPD) method at a temperature below 100℃. OTS (Octadecyltrichloro-Silane) selfassembled monolayers (SAMs) on glass wafers were used as substrates for the deposition of titanium dioxide thin films. This functionalized organic surface has shown to be effective for promoting the growth of films from titanic aqueous solutions by the LPD method at a low temperature below 100℃. The crystal phase composition, microstructure and topography of the as-prepared films were characterized by various techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results indicate that the as-prepared thin films are purely crystallized anatase TiO2 constituted by nanorods after being annealed at 500℃. The pH values, concentration of reactants, and deposition temperatures play important roles in the growth of TiO2 thin films.     

CVD法制备Sb掺杂SnO2薄膜的结构与性能研究

采用化学气相沉积法（CVD）制备了Sb掺杂SnO2薄膜（ATO），研究了Sb掺杂量对ATO薄膜结构和性能的影响。利用X射线衍射（XRD）、扫描电镜（SEM）、X射线光电子能谱（XPS）等分析手段对所制得薄膜的结构、形貌、成分等进行了表征，XRD结果表明在基板温度为665 ℃时能够制得结晶性能较好的多晶薄膜，XPS分析确定掺杂后的Sb以Sb5+离子形式存在。讨论了Sb掺杂量对方块电阻、透射率和反射率等薄膜性质的影响，结果表明,当Sb掺杂量为2%时取得最小方块电阻为7.8 Ω/□,在可见光区薄膜的透射率和反射率随着Sb掺杂量的增加呈下降趋势。最后探讨了Sb掺杂SnO2薄膜的显色特性，认为Sb5+离子的本征吸收是薄膜显色的主要原因。     

Self-cleaning glass coated with Fe~(3 )-TiO_2 thin film

1　INTRODUCTIONTheinfluenceofvariouschemicalsontheenvi ronmentisoneofthemostimportantsocialproblems .Therearemanywaystoabatethepollutionfromthechemicals .Oneofthemostpromisingtechniquesistooxidesuchchemicalsbyphotocatalysis .SinceFranketalreportedthepossibilityofusingTiO2 todecom posecyanideinwaterin 1977[1] ,therehasalsobeenincreasinginterestinenvironmentalapplicationsoftheoxide[2 4 ] .Althoughthemechanismoftitaniumdioxidephotocatalysishasbeenclarified ,therehavebeenfewsuccessfulindustr…     

Self-cleaning glass coated with Fe^3＋ -TiO2 thin film

The self-cleaning glass coated with Fe^3 -TiO2 photocatalytic thin film was prepared by sol-gel process from the system Ti(OC4H9),-NH(C2H4OH)2-C2H5OH-H2O containing FeCl3. The microstructure and properties of the film were studied using differential thermal analysis-thermogravimetry(DTA-TG), X-ray diffration (XRD) and scanning electron microscope(SEM). The transmittance of the self-cleaning glass was measured by using UV-Vis spectrometer. The effects of content of Fe^3 and the thickness of Fe^3 -TiO2 thin film on the photocatalytic ac-tivity were examined. The results show that the photocatalytic thin films are mainly composed of Fe3O4 and TiO2 particles within 10-100 nm. The appropriate amount of Fe^3 is effective for improving the photocatalytic activities of TiO2. The best photocatalytic activity is obtained when the molar ratio of Fe^3 to TiO2 is 0. 005 and the glass is coated with 9 layers.     

Characterization and Electrochemical Properties of LiMn2O4 Thin Films Prepared by Solution Deposition

1 IntroductionThin-filmlithium-ion batteries have attracted greatattention of researchfor possible use inimplantable medi-cal devices , CMOS-based integrated circuits ,radio fre-quency (RF) identification tags for inventory control andanti-theft protection[1],etc. Li Mn2O4thin films , aspromising cathode materials for thin-filmlithium-ion bat-teries, have been prepared by a few methods such aspulsedlaser deposition[2 ,3],electrospraying[4-9],RF mag-netron sputtering[10], laser ablation[11]…     

Synthesis of the CulnSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thinfilm for solar cells.The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time.The experiments were carried out according to an L18(2137) table.An X-ray diffractometer (XRD) and a scanning electron microscope (SEM) were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment.The results showed that the CuInSe2phase was deposited with a preferred plane (112) parallel to the substrate surface.The optimum parameters are as follows:currentdensity,7 mA/cm2;CuCl2 concentration,10 raM;FeCl3 concentration,50 raM;H2SeO3 concentration,15 mM;TEA amount,0 mL;pH value,1.65;deposition time,10 min;and annealing temperature,500℃.     

Synthesis of the CuInSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time. The experiments were carried out according to an L18(2137) table. An X-ray diffractometer(XRD) and a scanning electron microscope(SEM) were respectively used to analyze the phases and observe the microstruct...