防空信息战系统的灰色层次评价模型

针对防空信息战的特点,建立了评价指标体系。同时,将灰色关联分析与层次分析相结合,提出了灰色层次关联分析,并对防空信息战系统的效能评价进行了研究,给出了一种多指标评价的方法。该方法利用了待评方案的离差最大化原则和最大熵原理,建立了防空信息战系统的灰色层次关联评价模型。最后,通过实例计算表明模型的实用性和价值。     

防空信息战系统的灰色层次评价模型

针对防空信息战的特点，建立了评价指标体系。同时，将灰色关联分析与层次分析相结合．提出了灰色层次关联分析，并对防空信息战系统的效能评价进行了研究，给出了一种多指标评价的方法。该方法利用了待评方案的离差最大化原则和最大熵原理，建立了防空信息战系统的灰色层次关联评价模型。最后，通过实例计算表明模型的实用性和价值。     

一种新的通信信号识别方法研究

灰色关联分析的理论工具是序列间的灰色关联度,它是两个因素之间或者是两个系统之间关联的程度的量度,描述了系统发展过程中各因素间的相对变化情况。本文在原有香农熵权的灰色关联决策融合算法的基础上,提出了近似熵权的灰色关联决策融合算法,对于通信信号的仿真识别结果表明,近似熵权算法的效果最好。     

基于区间变权灰色关联法的集群目标威胁评估

以地面合成分队联合作战为背景,建立了基于集群目标的威胁评估指标体系;针对传统威胁评估方法中采用常权权重易导致状态失衡的问题,引入区间数理论确定指标区间常权,并结合作战态势利用变权理论确定指标区间变权权重,使权重能够随着战场变化而动态调整;将区间变权与灰色关联法相结合,构建出一种适用于区间数的最小二乘灰色关联威胁评估模型。最后通过实例仿真验证了模型和方法的有效性。     

雷达装备的保障能力评价

本文针对雷达装备的保障能力评价问题,综合分析了影响它的各方面因素,建立了评估指标体系,采用熵权法来改进层析分析法,并结合灰色模糊综合评判给出了综合评价模型,最后通过实例验证了模型的可行性和实用性。     

基于灰色关联算法的雷达反隐身性能评估

雷达反隐身的性能评估对现代空防战争具有重要意义。在深入分析雷达反隐身技术及相关基础理论基础上建立了雷达反隐身性能指标体系,提出了采用基于自适应熵权的灰色关联算法来进行雷达反隐身性能评估,解决了评价权重模糊问题,并结合经典最小二乘法和拉格朗日函数建立了优化评估模型,最后通过算例分析给出了该算法模型的应用过程,分析结果表明该算法能有效实现对雷达反隐身性能的排序和优选。     

基于熵权的信息系统运行质量评价模型及应用

针对信息系统运行质量评价中各指标的模糊性和不确定性,将信息论中的熵值理论应用于信息系统运行质量评价中,建立了信息系统运行质量评价指标体系。为合理地确定信息系统运行质量评价的指标权重,可将权重结构分为主观指标权重和客观指标权重,分别采用层次分析法和熵权法确定各指标权重,再用最小相对信息熵原理把它们综合为组合权重,从而建立信息系统运行质量的熵组合权重评价模型。该模型既可结合专家主观经验法,又可挖掘指标样本值的客观信息差异。应用供电公司信息系统实际数据测算结果验证了信息系统运行质量指标体系及其熵组合权重评价模型的有效性和实用性。     

灰色关联分析与支持向量机相融合的网络安全态势评价

为了提高网络安全态势的评价准确性,提出一种灰色关联分析与支持向量机相融合的网络安全态势评价模型.首先采用灰色关联分析对网络安全态势评价指标进行筛选,并根据对评价结果贡献赋予评价指标权值,然后将重要的评价指标作为支持向量机的输入向量,并采用社会力模型算法选择模型的参数,最后采用仿真实例分析了模型的评价性能.实验结果表明,本文模型通过灰色关联分析选择支持向量机的输入向量和社会力模型算法选择了最合理的型参数,可以准确描述网络安全态势与评价指标之间的变化关系,不仅提高了网络安全态势评价的正确率,加快了建模速度,而且获得比经典模更优的评价结果.     

基于AHP熵权法的信息化厂商评价模型及应用

针对信息化厂商综合评价中各指标的模糊性和不确定性,将信息论中的熵值理论应用于信息化厂商综合评价中,建立了信息化厂商综合评价指标体系。为了合理地确定信息化厂商综合评价的指标权重,可将权重结构分为主观指标权重和客观指标权重,分别采用层次分析法和熵权法确定各指标权重,再用最小相对信息熵原理把它们综合为组合权重,从而建立信息化厂商的熵组合权重评价模型。该模型既可结合专家主观经验法,又可挖掘指标样本值的客观信息差异。应用A公司信息化厂商的实际数据测算结果验证了信息化厂商指标体系及其熵组合权重评价模型的有效性和实用性。     

组合赋权的灰色关联法在便利店选址中的应用

针对南京市便利店的激烈竞争与亏损现象,以代表性的四家苏果便利为例,就便利店选址问题展开系统研究。为克服传统灰色关联法对评价指标影响程度考虑不足的情况,引入组合赋权方法进行综合性全面性的选址评价：根据指标值信息量大小而采用熵值法提高评价精度,根据指标值离散程度而运用离差最大化法确定各指标对评价结果的作用,最终求得各指标组合权重。在此基础上,运用灰色关联法对待决策方案与理想方案进行关联度计算,求得最优方案并得出改进后的灰色关联法优势。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.