Quasi-optical millimeter-wave band-pass filters using high-Tc superconductors

Quasioptical millimeter-wave band-pass filters using YBa₂ Cu₃O₇ high-T_c superconducting films were fabricated on MgO and LaAlO₃ substrates. Transmitted power through the filter was investigated in the 75 GHz to 110 GHz frequency range at temperatures ranging from 15 to 300 K. At 15 K the measured center frequency and the bandwidth of the superconducting filter were 92 GHz and 0.85 GHz, respectively. Measurements of YBa₂Cu₃O₇ filters were compared with similar filters fabricated using gold. At 15 K and 92 GHz, an improvement of 75% in the quality factor of the superconducting filter was obtained compared with a similar gold filter     

K-band MMIC active band-pass filters

Two K-band active band-pass filters using 0.15-/spl mu/m GaAs pHEMT technology, with one fixed-frequency and the other tunable, are designed, fabricated, and tested. The fixed-frequency filter has its central frequency at 22.6 GHz, with 900-MHz bandwidth (4%). The tunable filter can be tuned from 19.5 to 21.5 GHz with the same bandwidth. Both circuits have a common size of 1 mm /spl times/ 1 mm. To our knowledge, the tunable filter is the highest frequency tunable active filter ever reported.     

Log-domain high-order low-pass and band-pass filters

Continuous time current-mode high-order low-pass and band-pass filters based on the log-domain concept are presented in this paper. The passive RLC ladder networks are used as the prototype to achieve the proposed filter by simulating the RLC network synthesis method. The achieved filters have inherited the good sensitivity performance from the RLC passive prototype. Fifth-order RLC ladder low-pass filter and sixth-order RLC ladder band-pass filter are used as prototypes and the signal flow graph (SFG) technique is used for the synthesis. The SFG can identify group of integrators and several signal paths. Log-domain lossy and lossless integrators based on BJT technology are deployed to achieve the integrators for realization of proposed filters. The simulations were carried out and the results exhibited several features which are in agreement with the RLC prototype. The frequency response of filters along 100 kHz to 10 MHz can be electronically tuned through 5–500 µA of bias currents. The THD lower than 1% of LP and BP filters were measured at 10 MHz input. The multi-tone tested was included in the paper for verifying the performance of proposed LP and BP filters. The intermodulation distortions around −50 dB and −60 dB were also investigated for the proposed LP and BP filters.     

Tunable bandpass microwave filters based on defect commandable photonic bandgap waveguides

A new type of tunable filter based on a commandable defect in the bandgap of a periodic CPW structure is proposed. The defect level is tuned either mechanically by adding a covering slab over the device or electrically by polarising diodes located at the defect. The validity of this concept is experimentally demonstrated at 4 GHz. This kind of filter is well suited for applications in the 10 to 60 GHz frequency range.     

Quasi-planar filters for millimeter-wave applications

A variety of quasi-planar low-pass, bandpass, and bandstop filters suitable for millimeter-wave applications is reviewed. The emphasis is on ladder-shaped E-plane bandpass filters to highlight their advantages as well as limitations in terms of design, performance, and manufacturing. To extend their range of application it is suggested that E-plane filters be cascaded for better passband separation. A modified finline filter is presented to improve the performance and manufacturing of filters in waveguides below cutoff. It is shown that plated through-holes can simplify filter housing fabrication and that surface-metallized composite housings are a lightweight and low-cost alternative to metal housings     

高阶带通滤波器设计研究

本文详细讨论了FIR线性相位滤汉器幅频特性与神经网络算法之间的关系,证明了神经网络的收敛性条件,给出了FIR高阶带通滤波器的设计实例,研究结果表明该算法在高阶带通滤波器的优化设计中的有效性和优异性能。     

Tunable high-frequency Gm-C filters

We consider known, modified, and new transistor circuits for transconductors and some theory on their application in integrated tunable Gm-C or transconductor-eapacitor filters for high frequencies. The circuits are balanced and mostly complementary. They use bipolar (NPN and VPNP) and/or CMOS transistors. The low delay and low input capacitance of the newer circuits makes them particularly suitable for very high frequencies, in the hundreds of megahertz. The relatively high power efficiency and low noise lead to a low power consumption in combination with a high signal-to-noise ratio. Their simplicity results in a small chip area and hence in low cost. The partly new theory is on noise, sensitivities, quality factors, linearization, power and power efficiencies     

基于波纹耦合微带线的可调谐带通滤波器

设计了一种紧凑5阶双零点可调谐带通滤波器。通过在传统梳状线滤波器中引入波纹耦合微带线结构,该滤波器可以在中心频率调谐过程中保持绝对带宽恒定,同时尺寸相较于传统方法可减小50%。谐振器中引入分布式补偿电容利于滤波器应用于高介电常数衬底的微带线结构。基于源与负载间的耦合,引入两个传输零点来提高滤波器的衰减特性。HFSS仿真结果显示,当加载的电容值为2.43 pF时,滤波器的中心频率为1.48 GHz,带宽为194 MHz,插入损耗为1.36 dB。随着加载电容值从2.15 pF增加到2.93 pF,滤波器的中心频率从1.55 GHz减小至1.37 GHz。保持绝对带宽恒定的情况下,通带内的插入损耗小于1.5 dB。     

Design and performance of millimeter-wave end-coupled bandpass filters

The design and performance of millimeter-wave microstrip/suspended-stripline end-coupled bandpass filters are presented. Filters in Ka-band (26.5 to 40 GHz) and W-band (75 to 110 GHz) using suspended-stripline and microstrip have been designed. Good agreement between the experimental results and those predicted theoretically was observed. Measured passband insertion losses of less than 1 and 0.5 dB have been achieved in W- and Ka-band, respectively. An extremely wideband waveguide-to-microstrip transition with an insertion loss of 0.25 dB over the full W-band is also presented.     

Circulators for microwave and millimeter-wave integrated circuits

The requirements for circulators for use in combination with microwave and millimeter-wave integrated circuits are reviewed, with special emphasis on modules for phased-array antennas. Recent advances in broadbanding and in miniaturization are summarized. Novel types of circulators that are fabricated by attaching a ferrite disc and a suitable coupling structure to the surface of a dielectric of semiconductor substrate (quasimonolithic integration) are described. Methods for achieving complete monolithic integration are also discussed     

AlInAs-GaInAs HEMT for microwave and millimeter-wave applications

The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best lattice-matched devices with 0.1-μm gate length had a transconductance g_m=1080 mS/mm and a unity current gain cutoff frequency f_T=178 GHz, whereas similar pseudomorphic HEMTs had g_m=1160 mS/mm and f_T=210 GHz. Single-stage V-band amplifiers demonstrated 1.3- and 1.5-dB noise figures and 9.5- and 8.0-dB associated gains for the lattice-matched and pseudomorphic HEMTs, respectively. The best performance achieved was a minimum noise figure of F_min=0.8 dB with a small-signal gain of G_a=8.7 dB     

Graphical design of millimeter-wave finline bandpass filters

A very simple yet accurate design procedure for the finline bandpass filters at millimeter wavelengths is presented. The technique enables the geometry of finline bandpass filters to be obtained accurately from simple closed-form equations and curves. Using this graphical approach, various millimeter-wave finline bandpass filters have been designed. Results in V-band (50 to 75 GHz) and W-band (75 to 110 GHz) are presented and indicate a good agreement between the calculated and measured performances.     

Ferrite films for microwave and millimeter-wave devices

For microwave and millimeter-wave applications, there is increasing interest in using films rather than bulk ferrites. In some cases, such as magnetostatic wave devices, films provide definite performance advantages. In other cases, films may provide lower cost, smaller size, and enhanced compatibility with planar circuit designs such as monolithic microwave integrated circuits (MMIC). The author reviews some of the progress that has been made in development of single-crystal and polycrystalline ferrite films. He describes some of the ideas that are currently being considered for making these ferrites compatible with MMICs. The materials considered include garnets, spinels, and hexagonal ferrites     

1D linear-phase band-pass multiplierless FIR Hilbert transformers and filters

An original analytical method, based on modified Christoffel–Darboux formula, is used in the paper in order to synthesise a linear-phase band-pass finite impulse response (FIR) filter function that can have an effect of Hilbert transformer. New structure of the band-pass FIR filter in recursive realisation, together with the corresponding difference equation, is presented providing the efficient filter solution without multipliers. Several examples of filter types for different parity of two real free integer parameters, including a particular solution of Hilbert transformer, are considered in terms of required number of adders and values of cut-off frequencies of the pass and stop bands. A comparison of the proposed band-pass filter characteristics with those of a classical filter solution is provided in the paper.     

Microwave active resonator band-pass filters in various mmic technologies

In this article, two topologies of L-C parallel active resonators are presented. These circuits are realized in MMIC technology, using three transistors which could be MESFET, hemt or HBT. The survey of these resonators shows the possibility, by controling the values of a resistor and/or a capacitor, on the one hand, to tune the resonance frequency of these circuits, and on the other hand, to cancel out their losses so as to obtain negative conductance. Compact, lossless and narrow-band filters are then implemented using previous active resonators. To date, the use of mesfet technology has reduced the synthesis of such active filters in S-band and at X-band low frequencies. Now, however, hemt and HBT technologies allow the extension of their implementation to the whole X-band. This survey is illustrated by the simulated response of a 10 GHz filter with a 500 MHz 3 dB bandwidth. The mmic technology is a 0.2 μm hemt one. The simulated performances of this filter achieve a mean transmission gain of 0. 5 dB, with a reflection loss higher than 10 dB at 10 GHz,     

Tunable polymer double micro-ring filters

Based on the vernier effect, widely tunable polymer double micro-ring filters using the thermooptic effect or the electrooptic effect are demonstrated. A tuning enhancement factor of 40 was achieved at wavelengths near 1550 nm. The tuning rate for the thermooptic device is 120 GHz/mW and for the electrooptic device is 120 GHz/12 V. A tunable laser with a side-mode suppression ratio greater than 30 dB was demonstrated using this filter and erbium-doped fiber amplifier gain. Thermal tuning over 35 nm was achieved.     

基于光子学方法的负系数微波带通滤波器

光通信中,为了实现具有负系数特性的基于光子学方法的微波滤波器,采用了一种基于位相调制到强度调制转换的新颖而简单的方法。一个系数可转化的双抽头负系数全光微波带通滤波器得到了验证。结果表明,该滤波器不仅实现了负系数,其各项特性也得到了改善。     

一维光子晶体异质结结构偏振带通滤波器

利用一维光子晶体(PC)异质结结构带边峰值叠加的方法设计了一种偏振带通滤波器,在实现p偏振分量带通滤波的同时实现了禁带范同的展宽.给出了设计方法,讨论了这种带通滤波器的通带特性和禁带特性.所设计的偏振带通滤波器具有宽通带、宽禁带、膜层较少、小型化和类矩形通带等特点,制作简单,具有实际应用价值.     

Tunable, temperature-compensated dielectric resonators and filters

A thermal and electromagnetic model of a tunable hybrid-mode dielectric double resonator is introduced and analyzed by the mode-matching technique. Results of the analysis show the temperature sensitivity of the structure as a function of the center frequency as well as the other resonator parameters. A simple optimization procedure which allows the design of the resonator to have both a wide tunability range and good thermal stability of the resonant frequency is described. A circuit model is presented for a tunable four-pole dual-mode filter. The model exhibits interesting dual passbands, separated by a very-high-attenuation stopband. Measured results obtained from an experimental four-pole dual-mode dielectric resonator filter designed using the tunable hybrid-mode resonators showed excellent tunability range (200 MHz at C-band) and good agreement with the circuit model