Photocatalytic properties of porous TiO2/Ag thin films

In this study, nanocrystalline TiO₂/Ag composite thin films were prepared by a sol-gel spin-coating technique. By introducing polystyrene (PS) spheres into the precursor solution, porous TiO₂/Ag thin films were prepared after calcination at a temperature of 500 °C for 4 h. Three different sizes (50, 200, and 400 nm) of PS spheres were used to prepare porous TiO₂ films. The as-prepared TiO₂ and TiO₂/Ag thin films were characterized by X-ray diffractometry (XRD) and by scanning electron microscopy to reveal structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation.When PS spheres of different sizes were introduced after calcination, the as-prepared TiO₂ films exhibited different porous structures. XRD results showed that all TiO₂/Ag films exhibited a major anatase phase. The photodegradation of porous TiO₂ thin films prepared with 200 nm PS spheres and doped with 1 mol% Ag exhibited the best photocatalytic efficiency where ∼ 100% methylene blue was decomposed within 8 h under UV exposure.     

Enhancement of photosensitivity by annealing in Bi2S3 thin films grown using SILAR method

Bi₂S₃ thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. The as prepared thin film were annealed at 250 °C in air for 30 min. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurement systems. The X-ray diffraction patterns reveal that Bi₂S₃ thin film have orthorhombic crystal structure. SEM images showed uniform deposition of the material over the entire glass substrate. The optical energy band gap observed to be decreased from 1.69 to 1.62 eV for as deposited and annealed films respectively. The I–V measurement under dark and illumination condition (100 W) show annealed Bi₂S₃ thin film gives good photoresponse as compared to as deposited thin film and Bi₂S₃ thin film exhibits photoconductivity phenomena suggesting its useful in sensors device. The thermo-emf measurements of Bi₂S₃ thin films revealed n-type electrical conductivity.     

Nanocrystalline TiO2 thin films for NH3 monitoring: microstructural and physical characterization

Nanocrystalline titanium oxide thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH₃ gas-sensing technology. In particular, spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of titanium oxide thin films. The structure and the morphology of such material have been investigated by X ray diffraction, Scanning microscopy, high resolution electron microscopy and selected area electron diffraction. The X-ray diffraction measurements confirmed that the films grown by this technique have good crystalline tetragonal mixed anatase and rutile phase structure. The HRTEM image of TiO₂ thin film showed grains of about 50–60 nm in size with aggregation of 10–15 nm crystallites. Selected area electron diffraction pattern shows that the TiO₂ films exhibited tetragonal structure. The surface morphology (SEM) of the TiO₂ film showed that the nanoparticles are fine with an average grain size of about 50–60 nm. The optical band gap of TiO₂ film is 3.26 eV. Gas sensing properties showed that TiO₂ films were sensitive as well as fast in responding to NH₃. A high sensitivity for ammonia indicates that the TiO₂ films are selective for this gas.     

Activation energy for formation of nickel-aluminide thin film on nanocrystalline and microcrystalline nickel

In this paper, activation energy and time needed for formation of Al₃Ni₂ thin film with thickness of ∼1 μm on nanocrystalline (NC) nickel was investigated and compared with microcrystalline (MC) nickel. NC and MC samples were prepared by electrodeposition and annealing, respectively. The samples were aluminized by pack cementation method in the temperature range of 475–600 °C. The surface morphology and cross section of coated specimens were characterized by means of optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). It was observed that the time needed for formation of Al₃Ni₂ thin film on NC samples was shorter than that for MC specimens at all investigated temperatures. In addition, for both, time needed for formation of the thin film was decreased by increasing temperature according to exp (Q/RT). It was found that activation energy for formation of the thin film on NC samples was 35% lower than that for MC specimens. Activation energy for formation of thin film of Al₃Ni₂ were ∼50% and ∼ 120% lower than the activation energy for growth of thick layer of aluminide coating on MC and NC nickel, respectively.     

Structural and electrical characteristics of chemical solution derived (Bi3.2La0.4Nd0.4)Ti3O12 thin films

(Bi_3.2La_0.4Nd_0.4)Ti₃O₁₂ (BLNT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by using chemical solution deposition technique, and the effects of annealing temperatures in the range of 550-750 °C on structure and electrical properties of the thin films were investigated. X-ray diffraction analysis shows that the thin films have a bismuth-layered perovskite structure with preferred (117) orientation. The surface morphology observation by field-emission scanning electron microscopy confirms that films are dense and smooth with uniformly distributed grains. The grain size of the thin films increases with increasing annealing temperature; meanwhile, the structural distortion of the thin films also increases. It was demonstrated that the thin films show good electrical properties. The dielectric constant and dielectric loss are 191 and 0.028, respectively, at 10 kHz for the thin film annealed at 600 °C, and the 2Pr value of the thin film annealed at 700 °C is 20.5 μC/cm² at an electric field of 500 kV/cm.     

The effect of sputtering gas pressure on structure and photocatalytic properties of nanostructured titanium oxide self-cleaning thin film

Titanium oxide thin films were deposited by DC reactive magnetron sputtering on ZnO (80 nm thickness)/soda-lime glass and SiO₂ substrates at different gas pressures. The post annealing on the deposited films was performed at 400 °C in air atmosphere. The results of X-ray diffraction (XRD) showed that the films had anatase phase after annealing at 400 °C. The structure and morphology of deposited layers were evaluated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface grain size and roughness of TiO₂ thin films after annealing were around 10-15 nm and 2-8 nm, respectively. The optical transmittance of the films was measured using ultraviolet-visible light (UV-vis) spectrophotometer and photocatalytic activities of the samples were evaluated by the degradation of Methylene Blue (MB) dye. Using ZnO thin film as buffer layer, the photocatalytic properties of TiO₂ films were improved.     

Synthesis and properties of epitaxial SnO2 films deposited on MgO (100) by MOCVD

Epitaxial tin oxide (SnO₂) thin films have been prepared on MgO (100) substrates at 500-600 °C by metalorganic chemical vapor deposition method. Structural and optical properties of the films have been investigated in detail. The obtained films were pure SnO₂ with the tetragonal rutile structure. An in-plane orientation relationship of SnO₂ (110) [010]//MgO (200) [110] between the film and substrate was determined. Two variant structure of SnO₂ were analyzed. The structure of the film deposited at 600 °C was investigated by high-resolution transmission electron microscopy, and an epitaxial structure was observed. The absolute average transmittance of the SnO₂ film at 600 °C in the visible range exceeded 90%. The optical band gap of the film was about 3.93 eV.     

Formation of TiO2 domains in Poly (9-vinylcarbazole) thin film by hydrolysis-condensation of a metal alkoxide

New organic-inorganic hybrid thin films based on Poly (9-vinylcarbazole) (P9VK) and Dioxide titanium (TiO₂) bulk-heterojunction were obtained by a hydrolysis-condensation (H-C) process of titanium (IV) isopropoxide in thin film. The TiO₂ distribution in the film was investigated by scanning electron microscopy. The results indicated that homogeneous TiO₂ particles around 100 nm were formed on the surface of the polymer thin film. Photoluminescence spectroscopy has been used to study the charge transfer efficiency in the photoactive layer and results were compared with a simplest elaboration route, the dispersion of TiO₂ anatase in a P9VK solution before spin coating. Results showed that TiO₂ elaborated by H-C exhibits a competitive quenching effect with TiO₂ anatase.     

Effect of oxygen on the surface morphology of CuGaS2 thin films

Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS₂ thin films by two different types. In this study, CuGaS₂ thin films were deposited by vacuum thermal evaporation of CuGaS₂ powder on heated glass substrates at 200 °C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 °C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS₂ material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS₂ thin films. It was found that annealing of CuGaS₂ film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.     

Electrochemical properties of LiCoO2 thin film electrode prepared by ink-jet printing technique

LiCoO₂ thin film electrodes with a thickness of about 1.2 μm were fabricated by an improved ink-jet printing method. LiCoO₂ powder was synthesized via a modified sol-gel method. The LiCoO₂ ink could be easily prepared by an ultrasonic dispersion technique using a commercially available surfactant. The jet printing LiCoO₂ thin films were characterized by X-ray diffraction and Raman spectroscopy, scanning electron microscopy, cyclic voltammetry, charge/discharge cycling and electrochemical impedance spectroscopy. Experimental results showed that the LiCoO₂ thin film electrodes present excellent cycling performance at high discharge rate. At discharge current density of 180 μA/cm² (at this current density, the battery can be fully discharged in 12 min), the initial discharge capacity was 120 mAh/g, and after 100 charge-discharge cycles, the capacity loss was only 5%. It can be even charge-discharged at the current density as high as 384 μA/cm².     

Effect of annealing temperature on the microstructural and electrical properties of epitaxial Ga-doped ZnO film deposited on c-sapphire substrate

4 wt. % Ga-doped ZnO (GZO) film has been prepared on c (0001)—sapphire (Al₂O₃) substrate by Pulse Laser Deposition method. The effect of annealing temperature on the microstructural and electrical properties of the GZO thin film was investigated. X-ray diffraction and High-Resolution Transmission electron microscopy (HR–TEM) studies showed that the electrical and defects properties of GZO thin film were greatly influenced by annealing temperature. The crystallinity and electrical properties of the film can be improved by annealing at 800 °C. However, at a too high annealing temperature of 1,000 °C, the newly processing defects such as extended dislocations and a new nanoscale stacking fault were formed. Consequently, the crystallinity and electrical properties of the film annealed at 1,000 °C were degraded. The study was useful to acquire optimal annealing conditions to improve the properties of film.     

Chemical fabrication of p-type Cu2O transparent thin film using molecular precursor method

A transparent p-type Cu₂O thin film of 50 nm thickness was successfully fabricated by means of a solution-based process involving the thermal reaction of molecular precursor films spin-coated on a Na-free glass substrate. The precursor solution was prepared by the reaction of an isolated Cu²⁺ complex of ethylenediamine-N, N, N′, N′-tetraacetic acid with dibutylamine in ethanol. The Cu₂O thin films resulting from heat treatment of the precursor film at 450 °C for 10 min in Ar gas at a flow rate of 1.0 L min⁻¹ were characterized by X-ray diffraction which indicated a precise cubic lattice cell parameter of a = 0.4265(2) nm, with a crystallite size of 8(2) nm. X-ray photoelectron spectroscopy peaks, attributable to the O 1s and Cu 2p_3/2 level of the Cu₂O film were found at 532.6 eV and 932.4 eV, respectively. An average grain size of the deposited Cu₂O particles of ca. 200 nm was observed via field-emission scanning electron microscopy. The optical band edge evaluated from the absorption spectrum of the Cu₂O transparent thin film was 2.3 eV, assuming a direct-transition semiconductor. Hall Effect measurements of the thin film indicated that the single-phase Cu₂O thin film is a typical p-type semiconductor, with a hole concentration of 1.7 × 10¹⁶ cm⁻³ and hole mobility of 4.8 cm² V⁻¹ s⁻¹ at ambient temperature. The activation energy from the valence band to the acceptor level determined from an Arrhenius plot was 0.34 eV. The adhesion strength of the thin film on the Na-free glass substrate was also determined as a critical load (Lc1) of 2.0 N by means of a scratch test. The method described is the first example of fabrication and characterization of a p-type Cu₂O transparent thin film by a wet process.     

Microstructure-Property relationships in thin film ITO

Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) with an ITO (In₂O₃-10 wt.% SnO₂) target and deposited on borosilicate glass substrates. By changing independently the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. These different microstructures were mainly investigated not only by transmission electron microscopy (TEM) with cross-section and plan-view electron micrographs, but also by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction. Composition changes in ITO thin films grown under different deposition conditions were characterized by energy dispersive X-ray spectroscopy (EDX). The optical and electrical properties were studied respectively by UV-visible spectrophotometry and a four-point probe. The best compromise in terms of high transmittance (T) in the visible range and low resistivity (ρ) was obtained for films deposited between 0.66 and 2 Pa oxygen pressure (P_O2) at 200 °C substrate temperature (T_s). The influence of P_O2 and T_s on the microstructure and ITO film properties is discussed.     

Preparation of N-methylaniline capped mesoporous TiO2 spheres by simple wet chemical method

Pure anatase mesoporous TiO₂ nanospheres were synthesized by simple wet chemical treatment and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet–visible spectroscopy (UV–vis), Fourier transform infrared spectroscopy (FTIR) and powder X-ray diffraction (XRD). The results revealed that the surface morphology of the TiO₂ spheres could be controlled by adjusting the concentration of N-methylaniline and that the average diameter of the TiO₂ spheres was 600 nm. FTIR results confirmed the formation of N-methylaniline capped TiO₂ nanospheres.     

Synthesis of Eu2O3 hollow submicrometer spheres through a sol–gel template approach

Submicrometer-sized hollow Eu₂O₃ spheres with a shell thickness of about 75 nm and inner diameter about 690 nm have been synthesized through a sol–gel method using PS/PE microspheres as templates. X-ray powder diffraction (XRD), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), Field emission scanning electron microscopy (FESEM), and photoluminescence (PL) spectroscopy have been used for the characterization of the obtained hollow Eu₂O₃ spheres. The PL peak is obviously broadened compared with that of bulk Eu₂O₃. The mechanism of the formation of the hollow Eu₂O₃ spheres was discussed.     

Hydrothermal synthesis of PbWO4 uniform hierarchical microspheres

In this work, hierarchical PbWO₄ spheres assembled by nanorods were successfully synthesized through a tri-potassium citrate assisted hydrothermal process. The samples were studied by powder X-ray diffraction pattern (XRD), field scanning electron microscopy (SEM), and transmission electron microscopy (TEM). It was found that citrate played a key role on the morphology of PbWO₄ products. By adjusting concentration of citrate, PbWO₄ octahedrons, hierarchical spheres, hierarchical ellipses could be obtained. Based on time-dependent experiments, we found the growth of the hierarchical spheres followed a self-assembly process. The most interesting part was that the hierarchical spheres/ellipses showed a blue emission peak at 440 nm, which differs from the typical green one at 500 nm as reported.     

Optical,structural and electrochromic behavior studies on nanocomposite thin film of aniline,o-toluidine and WO3

In the field of materials for electrochromic (EC) applications much attention was paid to the derivatives of aniline. We report on the optical, structural and electrochromic properties of electrochromic thin film based on composite of WO₃ nanoparticles and copolymer of aniline and o-toluidine prepared by electrochemical polymerization method on fluorine doped tin oxide (FTO) coated glass. The thin film was studied by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy. The morphology of prepared thin film was characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and the thermal gravimetric analysis (TGA) as well. The optical spectra of nanocomposite thin film were characterized in the 200–900 nm wavelength range and EC properties of nanocomposite thin film were studied by cyclic voltammetry (CV). The calculation of optical band gaps of thin film exhibited that the thin film has directly allowed transition with the values of 2.63 eV on first region and 3.80 eV on second region. Dispersion parameters were calculated based on the single oscillator model. Finally, important parameters such as dispersion energy, oscillator energy and lattice dielectric constant were determined and compared with the data from other researchers. The nonlinear optical properties such as nonlinear optical susceptibility, nonlinear absorption coefficient and nonlinear refractive index were extracted. The obtained results of nanocomposite thin film can be useful for the optoelectronic applications.     

Manganese oxide thin films prepared by pulsed laser deposition for thin film microbatteries

Manganese oxide thin films with various oxidation states (MnO, Mn₃O₄ and Mn₂O₃) have been prepared by pulsed laser deposition using a Mn target at different oxygen partial pressures. The structural and morphological features of the as-deposited thin films are characterized by X-ray diffraction, Raman, field emission scanning electron microscopy (FESEM). The oxidation states of Mn in different thin films are investigated by X-ray photoelectron spectroscopy for both Mn 2p and 3s levels. It is found that the structure, surface morphology, and Mn oxidation state of the thin films can be tuned by oxygen partial pressure during the deposition. As anode for thin film lithium-ion microbatteries, the Mn₃O₄ thin film electrode exhibits the largest reversible capacity up to 800 mAh g⁻¹ with good cycling stability and excellent rate capability. The promising electrochemical performance of the Mn₃O₄ thin film electrode indicates the potential application of Mn₃O₄ thin film anode in all solid-state thin film microbatteries.     

Effect of Li doping on the structural, optical and electrical properties of spray deposited SnO2 thin films

Studies on spray deposited transparent conducting Li doped SnO₂ thin films are scarce. Li (0 to 5 wt.%) doped SnO₂ thin films spray deposited onto glass substrates at 773 K in air from chloride precursors were studied for their structural, optical and temperature dependent electrical behaviors. X-ray diffraction patterns indicated single phase with polycrystalline nature. Systematic variation in surface morphology on Li doping was examined by scanning electron microscopy and atomic force microscopy. Film thickness, optical band gap (direct and indirect), sheet resistance and figure of merit were computed from spectral transmittance and temperature dependent resistivity data. Lithium doping was found to decrease the value of sheet resistance by an order in magnitude. Activation energy was computed from temperature dependent electrical resistivity data measured in the range 300 to 448 K. The 4 wt.% Li doped SnO₂ film was found to have a high value of figure of merit among other films. The results are discussed.     

Biaxial CdTe/CaF2 films growth on amorphous surface

A continuous and highly biaxially textured CdTe film was grown by metal organic chemical vapor deposition on an amorphous substrate using biaxial CaF₂ nanorods as a buffer layer. The interface between the CdTe film and CaF₂ nanorods and the morphology of the CdTe film were studied by transmission electron microscopy (TEM) and scanning electron microscopy. Both the TEM and X-ray pole figure analysis clearly reveal that the crystalline orientation of the continuous CdTe film followed the {111}<121> biaxial texture of the CaF₂ nanorods. A high density of twin faults was observed in the CdTe film. Furthermore, the near surface texture of the CdTe thin film was investigated by reflection high-energy electron diffraction (RHEED) and RHEED surface pole figure analysis. Twinning was also observed from the RHEED surface pole figure analysis.