共查询到19条相似文献,搜索用时 125 毫秒
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为了评价弹道武器装备的战绩效能,采用三台同步高速相机研究基于图像的多基站定点交会测量技术,构建多基站定点交会测量模型和基于Levenberg-Marquardt算法的多基站标定模型,并充分考虑应用环境、相机同步、相机温漂、成像质量以及标定点定位等引入的误差,通过蒙特卡罗模拟仿真方法对不同作用距离交会测量精度进行仿真分析,仿真实验结果表明,在2 km时各坐标分量测量不确定度均小于0.66 m,在1 km时各坐标分量测量不确定度均小于0.45 m,在500 m时各坐标分量测量不确定度均小于0.28 m,完全满足靶场测量应用要求。 相似文献
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杨文静 《电子产品可靠性与环境试验》2013,(4):14-17
对于用电感耦合等离子体-原子发射光谱法(ICP-OES)测定焊料中的金属元素铅含量的不确定度来源进行了分析和计算。测量不确定度主要来源于测量重复性、回收率、试样称量、标准溶液配制、校准曲线拟合和样品体积。依据不确定度评定的步骤,计算得到了各分量标准不确定度及合成标准不确定度。 相似文献
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阐述了用内标法在扫描电子显微镜上测定固体颗粒直径的方法﹑实验﹑计算方法和测量不确定度评估。并通过对测量不确定度评估的讨论,认为用内标法在扫描电子显微镜上测量微小物质长度是一种操作方便,可以获得较小的测量不确定度的方法。 相似文献
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Markov-reward models are often used to analyze the reliability and performability of computer systems. One difficult problem therein is the quantification of the model parameters. If they are available, e.g., from measurement data collected by manufacturers, they are: (a) generally regarded as confidential; and (b) difficult to access. This paper addresses two ways of dealing with uncertain parameters: (1) sensitivity analysis, and (2) Monte Carlo uncertainty analysis. Sensitivity analysis is relatively fast and cheap but it correctly describes only the local behavior of the model outcome uncertainty as a result of the model parameter uncertainties. When the uncertain parameters are dependent, sensitivity analysis is difficult. The authors extend the classical sensitivity analysis so that the results conform better to those of the Monte Carlo uncertainty analysis. Monte Carlo uncertainty analysis provides a global view. Since it can include parameter dependencies, it is more accurate than sensitivity analysis. By two examples they demonstrate both approaches and illustrate the effects uncertainty and dependence can have 相似文献
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由于被测对象相距较远,高精度的公共测量基准难以建立,因此大尺寸空间角测量的难度较大。为了解决大尺寸条件下空间角的现场测量问题,提出一种基于惯性基准的大尺寸空间角测量方法。首先,阐述了大尺寸空间角的测量原理并且设计了测量系统。然后,对测量系统中基于二维振镜的光轴指向不确定度进行了研究,重点分析了各类误差对光轴指向不确定度的影响。最后,利用蒙特卡洛仿真对各项误差所引起的光轴指向不确定度进行评定,为光轴跟踪装置的误差分配及其指向精度的现场评估等工作奠定了基础。 相似文献
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Zhi-Jie Pan Ya-Chuan Tai 《Reliability, IEEE Transactions on》1988,37(4):421-423
The authors present an algorithm to compute variance importance, a measure of uncertainty importance for system components. A simple equation has been derived for the measure, and Monte Carlo simulation is used to obtain numerical estimates. The algorithm overcomes NP-difficulty (non-polynomial difficulty) which exists in earlier methods for computing uncertainty importance, and is simpler, more accurate, and more practical. Moreover, it shows the direct relationship between probabilistic importance and uncertainty importance. An example illustrates the evaluation of Monte Carlo variance importance for a sample system 相似文献
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Mauro Ciappa Alexander Koschik Maurizio Dapor Wolfgang Fichtner 《Microelectronics Reliability》2010,50(9-11):1407-1412
Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects. 相似文献
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《Electron Device Letters, IEEE》1981,2(11):295-297
Some important consequences of the uncertainty principle on Monte Carlo simulations of very high field transport are discussed. It is shown that recent values of the phonon scattering rates reported for GaAs by Shichijo and Hess lead to an unrealistically high collisional broadening (0.3-0.6eV) of the electronic states, thus rendering questionable any attempt to relate transport properties to the band structure, and invalidating the semiclassical Boltzmann transport picture used in the Monte Carlo simulation. These considerations are important in the modeling of very high field transport properties in semiconductor devices. 相似文献
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Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs 总被引:1,自引:0,他引:1
Gilson I. Wirth Roberto da Silva Ralf Brederlow 《Electron Devices, IEEE Transactions on》2007,54(2):340-345
This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results 相似文献
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《Electron Devices, IEEE Transactions on》1972,19(11):1190-1198
The frequency characteristic of the shot-noise reduction factor (R2) of the "O "-type diode is investigated by three methods: the first is a Monte Carlo calculation following the approach of Tien and Moshman and changing the pseudorandom numbers; the second is a computer simulation of the reduction of the modulated electrons at the potential minimum; and the third is the experimental measurement of shot-noise reduction using photoemission electrons produced by a mode-locked ruby laser. It is found by the Monte Carlo calculation that the original results of Tien and Moshman are not characteristic of the general situation, especially with regard to the peak at the plasma frequency of the potential minimum, and with regard to the dip commonly called the Tien dip. Calculations of the shot-noise reduction factor both by the Monte Carlo method and by the computer simulation approach show a rather smooth high-pass frequency characteristic. This result is verified by the photoemission experiments where the measurement accuracy has been enhanced through the use of mode locking. 相似文献
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根据蒙特卡罗仿真方法基本思想,分析了加性高斯噪声和单频干扰条件下的QPSK信号相位分布模型及其相关检测方法;讨论了加性噪声和单频干扰模型,建立了相关检测系统蒙特卡罗仿真模型,模型通过动态系统仿真软件SystemView的二次开发方法实现;进行了仿真电路设计与应用系统性能分析。 相似文献
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使用MonteCarlo模拟方法和器件振荡特性测试研究了异质谷间转移电子器件的直流隧穿特性和射频振荡性能与器件结构参数之间的关系.理论计算结果与实验数据间吻合得很好.在此基础上提出了通过电性能测试来分析器件结构参数的新方法.使用逐层化学腐蚀C-V测试测定了有源层的掺杂分布.通过低场电阻测量确定了量子阱的宽度.最后从器件振荡特性与MonteCarlo模拟曲线的对照中得出了掺杂接口的浓度.由此建立了器件结构参数的一套完整的测试分析方法.使用这套测试监控方法,已成功地研制出MBE和MOCVD工艺的高效、大功率振 相似文献