掺氮ZnSe外延层的光致发光研究

报导了掺氮ＺｎＳｅ外延层的光致发光,研究了与氮受主有关的发光峰随温度和激发强度的变化关系．１０Ｋ下施主－受主对发光峰随激发强度的增加向高能方向移动,且峰强呈现饱和趋势．在１０～３００Ｋ温度范围光致发光谱表明,随着温度增加,由于激子在受主束缚激子态和施主束缚激子态之间转移,施主束缚激子发光峰强度相对受主束缚激子发光峰强度增加     

GaAs-GaAlAs多量子阱结构发光的激子性质和温度特性

本文详细研究了GaAs-GaAlAs多量子阱结构发光的激子性质和温度特性.高质量的量子阱材料在低温下具有窄的激子发光谱线,且在宽广的温度范围内保持激子发光特性.本文首次报道了同一样品中来自宽阱和窄阱的发光谱线在不同温度下的竞争现象.     

准二维强耦合激子能量的温度依赖性

采用线性组合算符法和LLP变分法研究了晶格热振动和极化子效应对量子阱中激子与界面光学(IO)声子强耦合又与体纵光学(LO)声子弱、中耦合体系的基态和激发态的影响,推导出作为量子阱宽和温度函数的激子基态能量的移动和第一内部激发态能量的移动的表达式,以AgCl/AgBr/AgCl量子阱为例进行了数值计算.结果表明,由激子IO声子强耦合所产生的激子基态能量移动和第一内部激发态能量移动随温度的升高而增大,而由激子-LO声子弱、中耦合所产生的激子基态能量移动和第一内部激发态能量移动随温度的升高而减小.     

准二维强耦合激子能量的温度依赖性

采用线性组合算符法和LLP变分法研究了晶格热振动和极化子效应对量子阱中激子与界面光学(IO)声子强耦合又与体纵光学(LO)声子弱、中耦合体系的基态和激发态的影响,推导出作为量子阱宽和温度函数的激子基态能量的移动和第一内部激发态能量的移动的表达式,以AgCl/AgBr/AgCl量子阱为例进行了数值计算.结果表明,由激子IO声子强耦合所产生的激子基态能量移动和第一内部激发态能量移动随温度的升高而增大,而由激子-LO声子弱、中耦合所产生的激子基态能量移动和第一内部激发态能量移动随温度的升高而减小.     

Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity

采用量子光学和极化子正则变换的方法研究了有限温度下半导体微腔中单量子点的激子动力学行为,并解析得到了激子真空拉比分裂随温度变化的函数关系.     

纳米微晶结构氧化锌中激子发光的研究进展

由于ZnO具有大的激子束缚能,有利于在室温下获得高效稳定的紫外辐射.因此,对ZnO激子发光的研究极有希望解决半导体照明、紫外半导体激光器等多种技术面临的瓶颈问题.综述了ZnO中激子的典型光致发光谱、激子的结构及复合发光过程.重点介绍了温度、激发功率、量子限域效应以及激光辐照等因素对ZnO激子发光的影响.     

ZnSe—ZnS应变层超晶格的激子发光和强激发效应

利用光致发光和吸收光谱测量研究了ZnSe—ZnS 多量子阱(MQW)应变层超晶格(SLS)的激子特性,这种 MQW SLS 是用低压有机金属化学汽相沉积技术在(100)ZnS 和 GaAs 衬底上制备的。用氮分子脉冲激光器增加激发强度,发现主要的激子带向更高光子能量的方向偏移。为了了解激子的分离机制,测量了温度与线宽及强激发下发射强度的关系。根据激子散射所起的作用,从三个方面分析了线宽与温度的关系;这三种激子散射分别与 LO、声预声子和施主杂质有关。激子热释放的激活能量约为71meV,该值非常接近于4E_B,D(块状 ZnSe的结合能 E_B,D=19meV)。     

GaAs/GaAlAs多量子阱激子吸收谱

在10K至292K温度范围内测量了GaAs/GaAlAs多量子阱结构的激子吸收谱.观察到轻、重空穴对应的激子吸收峰(LH和HH)及台阶状态密度.研究了轻、重空穴激子吸收峰的能量间隔及激子吸收峰的温度特性.发现多量子阱样品的LO声子展宽系数为6.1meV,比体GaAs的展宽系数略小.样品用国产MBE设备生长,采用化学选择腐蚀技术除去GaAs衬底.     

掺施主和受主的GaP:N发光的热猝灭

对GaP:N(Te,Zn)中束缚激子发光热猝灭的测量和分析表明,中性Te原子以“俄歇阻断”作用,在NN对发光猝灭温度相对于不掺施主和受主的GaP:N有所降低方面起了关键的影响。掺Te后孤立N发光峰的猝灭温度提高,则是由于增加了N原子上电子分布的几率。这支持了N束缚激子的Hopfield-Thomas-Lyneh模型。受主Zn的作用是使自由激子发光随温度升高而缓慢增强,对A峰猝灭的减缓可能也有贡献。     

用光电导研究不同厚度未掺杂MOCVD GaAs外延层自由激子

用光电导测定厚度为４￣３０μｍ的未掺杂ＧａＡｓ ＭＣＶＤ外延层中自由激子跃迁特性，发现当外延层厚度增加时，结合能Ｒｘ增大，ｎ＝１自由激子峰位略向低能区漂移，而激子的高激子态强度的寿命τ都减小，这些效应主要归因子外延层表面的缺陷和电场的作用，最后，讨论了光致发光和测量温度对它的影响。     

子集和问题的量子中间相遇搜索算法

子集和问题是NP完全问题,该问题是背包公钥的基础.现有最优的经典算法求解规模为n的子集和问题需要O(n2n/2)步运算.本文提出了基于时空折衷思想的量子中间相遇搜索算法,该算法可以在O(n2n/3)步求解规模为n的子集和问题,其存储复杂性为O(2n/3).由于NP完全问题可以在多项式时间内可相互归约,所以,在存储复杂性...     

Calculation of transient response

Given the rational algebraic function X(s) = an?1Sn?1+an?2Sn?2+?+a1s+a0/sn+bn?1sn?1+?+b1s+b0 it is shown that the corresponding time function is expressed simply by the linear combination x(t) = an?1qn?1(t)+an?2qn?2(t) +? +a1q1(t) + a0q0(t) where functions qt(t) are the last column elements of the transition matrix M(t) = exp (At).     

Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot

The energy eigenvalues and eigenfunctions have been obtained for a core-shell CdSe/ZnS quantum dot structure under effective-mass approximation. The electric transition dipole moment is calculated for the 1s-2s electronic transition. The optical nutation signal of the transition of electrons has been calculated numerically based on optical Bloch equations. Particularly, we have investigated the quantum size, the core's radius and the shell's thickness, dependent optical nutation. It is shown from calculation results that the optical nutation signal is sensitive to the size and structure change. And the reasons for the variation of the Rabi frequency have been discussed based on the theory of the quantum size confined effect (QSCE).     

量子突发纠错乘积码的构造

量子突发纠错码是以CSS量子码的纠错原理和构造技术为基础,在量子计算和量子通信中有着十分重要的作用。首次利用GF(q)上的任意线性码C1=〖JB([〗n,k1,d1q和满足对偶包含关系的BCH码C2=〖JB([〗n,k2,d2q,来构造乘积码C1C2和(C1C2)⊥,当满足n2>2k1k2时,在CSS构造的基础上便可构造参数为[[n2,n2－n]]的量子突发纠错乘积码,并给出其突发纠错能力。     

有限域上常循环厄密特对偶包含码及其应用

该文研究了有限域GF(q2)上长度为(q2m-1)/(q2-1)的常循环码。给出一类常循环码是厄米特对偶包含码的一个充要条件,并确定了这类常循环厄米特对偶包含码的参数。利用厄米特构造,得到了比量子BCH码参数更好的量子纠错码。     

激光场作用下原子系统中光学烧孔和慢光效应

在四能级N模型原子系统中,当一束饱和光和一束探测光同向传播并且两束耦合光反向传播时,由于饱和光与探测光不能处于相消多普勒状态,可以同时在吸收光谱中观测到五个下凹,均为相干光学烧孔。通过缀饰态理论,计算了烧孔的位置,发现中间深而窄的烧孔是由两个相干光学烧孔叠加而成。通过参考系数的合理调节以及改变饱和光的拉比频率,可以改变烧孔形成的深度;通过改变耦合光的拉比频率,可以改变烧孔形成的位置。最后通过数值模拟得出饱和光的拉比频率在相干光学烧孔中实现光速减慢起到重要作用。这些结论对未来的光量子存储、光量子信息都有着重要的应用价值。     

Kerr效应和虚光场对"两个二能级原子-单模光场"系统原子占居态几率的影响

研究Rerr介质中，非旋波近似下两个二能级原子与单模光场相互作用系统的原子占居态几率的时间演化，讨论了Rerr效应和虚光场效应对原子占居态几率的影响。结果表明：虚光场的影响使原子占居态几率的时间演化曲线中出现量子噪声，光场频率ω的增大使量子噪声减小，原子间耦合系数g的增大使各能级原子占居态几率曲线的振幅减小，Rerr介质常量μ的增大使原子停留在初始状态的几率增大。     

The shape of self-assembled InAs islands grown by molecular beam epitaxy

We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with {136} bounding facets. This shape is characterized by C_2v symmetry and a parallelogram base, which is elongated along the direction. Cross-sectional transmission electron microscopy images taken along the [110] and directions as well as atomic force microscopy images strongly support the {136} shape. Furthermore, polarization-resolved photoluminescence spectra show strong in-plane anisotropy, with emission predominantly polarized along the direction, consistent with the proposed quantum dot shape.     

Rabi oscillations for subpicosecond pulses in quantum-well optical amplifiers: interplay of carrier heating, nonlinear, and spectral effects

Using the Foreman effective mass Hamiltonian for strained In/sub x/Ga/sub 1-x/As--In/sub y/Ga/sub 1-y/As/sub z/P/sub 1-z/ quantum wells, the propagation of subpicosecond pulses in a 1.55-/spl mu/m optical amplifier was calculated. The multisubband carrier dynamics as well as the polarization dynamics were taken into account. Carrier heating and coherent light-carrier interactions as well as the interplay of these nonlinear processes and the amplifier dispersion are studied. Strong Rabi oscillations occur in the optical field of a propagated pulse, its frequency chirp, as well as in the carrier density and temperature. While the Rabi oscillation imposes negative frequency chirp and hence red-shifts the pulse spectrum, positive frequency chirp can occur due to the local gain dispersion, where the higher frequency components of the pulse have larger gain. Due to the Rabi oscillation, the spectrum of the amplified pulse is considerably distorted and sidebands emerge. For a linearly chirped input pulse, the spectrum of the output pulse can be either red-shifted or blue-shifted with respect to its center frequency, depending on its initial chirp. For strong pulse propagation, a pronounced pulse break up occurs when a 175-fs pulse propagates in the gain regime, while a significant pulse compression occurs when the pulse propagates at the transparency point.     

Fast evaluation of logarithms in fields of characteristic two

A method for determining logarithms in GF(2^{n})is presented. Its asymptotic running time isO(exp (cn^{1/3} log^{2/3} n))for a small constantc, while, by comparison, Adleman's scheme runs in timeO(exp (c^{'}n^{1/2} log^{1/2} n )). The ideas give a dramatic improvement even for moderate-sized fields such as GF(2^{127}), and make (barely) possible computations in fields of size around2^{400}. The method is not applicable to GF(q)for a large primeq.