共查询到18条相似文献,搜索用时 125 毫秒
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使用三维电磁场模拟的方法对相同硅衬底结构下不同布图结构的螺旋电感进行了模拟和分析.通过改变电感匝数、电感金属的宽度和间隔以及电感的内径,模拟和分析了电感性能的变化.给出了引起电感性能变化的原因.结果表明优化电感的几何参数可以有效地改善电感性能.得出了一些实用的设计原则,可有效地指导射频集成电路中集成电感的设计. 相似文献
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RF集成电感的设计与寄生效应分析 总被引:5,自引:0,他引:5
分析了体硅 CMOS RF集成电路中电感的寄生效应 ,以及版图参数对电感品质因数 Q的影响 ,并通过Matlab程序模拟了在衬底电阻、金属条厚度、氧化层厚度改变时电感品质因数的变化 ,分析了不同应用频率时版图参数在寄生效应中所起的作用 ,得出了几条实用的设计原则并进行了实验验证 ,实验结果与模拟值符合得很好 ,表明此模拟方法与所得结论均可有效地用于指导射频 (RF)集成电路中集成电感的设计 相似文献
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采用三维全波电磁场模拟软件HFSS作为分析工具,对八边形差分对称结构电感和单端结构电感进行对比研究,提出利用多层金属并联布线、渐变线宽和图案接地屏蔽(PGS)等结构与差分对称结构集成来提高片上电感性能的设计方案.此方案能与标准硅基CMOS工艺兼容.仿真结果表明,该方案能有效提高集成电感的Q值. 相似文献
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分析了E类功放的非理想因素,其中着重分析寄生电感对系统性能的影响,采用伪差分E类功放结构有效地抑制寄生电感的影响。最后基于理想的设计方程和Load Pull技术,采用 0.18 μm CMOS工艺,设计出高效率的差分E类功率放大器。在电源电压1.8 V,温度25 ℃,输入信号0 dBm条件下,具有最大输出功率26.1 dBm,PAE为60.2%。 相似文献
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Scuderi A. Biondi T. Ragonese E. Palmisano G. 《IEEE transactions on circuits and systems. I, Regular papers》2004,51(6):1203-1209
A lumped scalable model for spiral inductors in silicon bipolar technology has been developed. The effect of three different cross sections on inductor performance was first investigated by comparing experimental measurements. Using both the results of this analysis and three-dimensional electromagnetic simulation guidelines, several circular inductors were integrated on a radial patterned ground shield for model validation purposes. The model employs a novel equation for series resistance with only one fitting parameter extracted from experimental measurements. All other model elements were related to technological and geometrical data by using rigorous analytical equations. The model was validated using one- and two-port measured performance parameters of 45 integrated inductors, and excellent agreement was found for all considered geometries up to frequencies well above self-resonance. 相似文献
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Dan Zhao Kiat Seng Yeo Manh Anh Do Chirn Chye Boon 《Analog Integrated Circuits and Signal Processing》2011,66(1):67-79
This paper discusses the impacts of key geometrical parameters on the performance of interleaved transformers in CMOS radio
frequency integrated circuits (RFICs). It also presents a compact circuit model for the transformer based on the “2-π” model
of on-chip spiral inductors. All the RLC circuit elements can be calculated from the transformer’s geometrical and process
parameters. Verification with accurately calibrated electromagnetic (EM) simulation data demonstrates accurate performance
prediction and good scalability for a wide range of transformers’ layout. 相似文献
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This paper proposes a hybrid methodology for the evaluation of integrated inductors sensitivity against technological/geometrical parameters variation. The obtained results are used in an optimization-based design environment for integrated inductors, as a way of guaranteeing that obtained solutions are robust against parameter variation. For the inductor characterization, a lumped element model is used, where each element value is evaluated through physics based equations. The sensitivity of the inductor characterization to parameter variations is evaluated at two levels. At the physical level, the sensitivity of the model element values to technological/geometrical parameters variations is computed through an equation-based strategy. Then, the sensitivity of the inductor characterization to the model parameter variations is obtained through a simulation-based approach, where the Richardson extrapolation technique is used for the calculation of the partial derivatives. Several examples considering the evaluation of sensitivity of both inductance and quality factor of two inductors in UMC130 technology are presented. Obtained results are compared against Monte-Carlo simulations. 相似文献
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The analytical optimization of several spiral inductors with different inner diameters, line widths, coil spacing, turn numbers, ring shapes, metal thicknesses, and substrates was performed by the measurement-derived inductance and Q-factor. Through the analytical optimization, a thick electroplated Cu/Au metal process and an additional sputter-etching strategy on a 200 μm finished SI-GaAs substrate with the suitable layout parameters have been proposed in order to obtain the higher performance and yield for the spiral inductors. The proposed physical layouts and fabrication parameters are an optimal solution for manufacturing spiral inductors in the integrated passive device (IPD) process that require high performance, stringent size, and volumetric efficiency. 相似文献
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To meet requirements in mobile communication and microwave integrated circuits, miniaturization of the inductive components that many of these systems require is of key importance. At present, active circuitry is used which simulates inductor performance and which has high Q-factor and inductance; however, such circuitry has higher power consumption and higher potential for noise injection than passive inductive components. An alternate approach is to fabricate integrated inductors, in which lithographic techniques are used to pattern an inductor directly on a substrate or a chip. However, integrated inductors can suffer from low Q-factor and high parasitic effects due to substrate proximity. To expand the range of applicability of integrated microinductors at high frequency, their electrical characteristics, especially quality factor, should be improved. In this work, integrated spiral microinductors suspended (approximately 60 μm) above the substrate using surface micromachining techniques to reduce the undesirable effect of substrate proximity on the inductor performance are investigated. The fabricated inductors have inductances ranging from 15-40 nH and Q-factors ranging from 40-50 at frequencies of 0.9-2.5 GHz. Microfilters based on these inductors are also investigated by combining these inductors with integrated polymer filled composite capacitors 相似文献