用于MICROMEGAS的电荷灵敏前放芯片研究

介绍了一种用于MICROMEGAS气体探测器的电荷灵敏前放ASIC设计,重点介绍了电路结构,详细分析了电荷灵敏前放的噪声.针对探测器的应用,实现了一种新型电荷灵敏前置放大芯片MMCSA的设计.MMCSA芯片采用Chartered 0.35μm工艺制作,测得的输入电荷范围为2～ 350 fC,噪声为小于1000 e-.     

一种低噪声快电荷灵敏前置放大器的研制

简要介绍了新型低噪声快电荷灵敏前置放大器。这种电荷灵敏前置放大器采用新的设计方法案，该前放主要采用低噪声场效应晶体管和集成运算放大器构成，其等效输入噪声≤2．2keV。该前放具有电路结构简单、体积小、输出信号上升时间快、噪声低、稳定性好等特点。     

改进的CMOS电荷灵敏前放噪声优化设计方法

CMOS专用集成电荷灵敏前放的噪声性能对于辐射探测非常关键.提出了一种改进的CMOS电荷灵敏前放低噪声设计方法,通过实例计算得到的噪声结果比现有方法都有不同程度的提高.     

一种新型的8路电荷灵敏前置放大器

本文介绍了一种新型专用的多路电荷灵敏前置放大器,其路数最多为八路,这种电荷灵敏置放大器采用新的设计方案,该前放主要采用低噪声场效应晶体管和集成运算放大器构成,其等效输入噪声小于等于2．2 keV。该前放具有电路结构简单、体积小、输出信号上升时间快、噪声低、稳定性好等特点。并对它的设计以及特点作了较详细的阐述。     

低噪声电荷灵敏前置放大器关键技术的现状与发展

电荷灵敏前置放大器因其输出增益稳定、噪声低和性能良好在高分辨率能谱测量系统中得到了广泛应用。根据电荷灵敏前置放大器的基本原理及其噪声来源,分析了降低其噪声的关键技术,并结合国内外研究现状阐述了这些技术的实际应用。指出了为满足人们对未知世界的探索,未来前放将向极低噪声、极低功耗、高度集成、高灵敏度、宽带宽的ASIC芯片方向发展。     

小尺寸电荷灵敏前置放大器

介绍了一种应用于半导体探测器的小尺寸电荷灵敏前置放大器的实例，并分析了测量其噪声的方法，给出了降低前放噪声的几种手段。     

用于CZT探测器信号读出的低噪声电荷灵敏前放A250

本文测量和分析了电荷灵敏前放A250的电子学噪声对CZT探测器能谱展宽的影响.在成形时间下1 μs下A250的零电容噪声为104.8 e,噪声电容斜率为4.18 e/pF.测得241Am 59.5 kev全能峰能量分辨率为4.08%.     

用于GaAs半导体探测器的电荷灵敏前置放大器的设计

介绍了一种用于GaAs半导体探测器,以场效应管和集成运放为主要器件的低噪声的电荷灵敏前置放大器的设计.设计性能指标达到:电荷灵敏度2×1012 V/C,等效噪声电荷＜100(电子-空穴),上升时间＜10 ns.     

多通道低噪声前置放大器设计

为满足硅微条探测器研制的需求,本文研制了一款多通道低噪声电荷灵敏前放ASIC芯片。设计完成电荷灵敏前置放大电路和极零相消电路;并分析电路的积分非线性、噪声斜率、可靠性等指标参数。该电荷灵敏前放输入动态范围20~830 f C时,等效输入噪声为685.73+32.37 e-rms/p F。     

基于示波器和数字滤波的电荷灵敏前放噪声测量

本文提出了一种新的电荷灵敏前放的噪声测试方法,利用数字示波器和数字滤波对信号进行采样处理.与传统模拟测量系统相比,该方法具有参数可调,方便高效的优点.试验结果与传统测试结果基本吻合.     

Design and Optimization of Low-Noise Wide-Bandwidth Charge Preamplifiers for High Purity Germanium Detectors

Design criteria for low-noise wide-bandwidth charge-sensitive preamplifiers for highly-segmented HPGe detectors are presented. The attention is focused on the optimization of the preamplifier noise, long-term gain stability, and bandwidth. The charge-sensitive preamplifiers of AGATA, i.e., the Advanced GAmma Tracking Array detector for next generation nuclear physics experiments, have been designed, realized and optimized using the proposed techniques. The circuit, in conjunction with the detector, provided an Equivalent Noise Charge of 101 electrons r.m.s., a rise time of ~ 8.3 ns, no appreciable line shift in long term acquisitions, a dynamic range of as much as 92 dB. An analytical study of the circuit is made. Computer simulations and experimental results are shown and critically discussed.     

一种新型的电流灵敏前置放大器

低噪声，数字化，集成度高的数据采集系统是当今辐射成像测量中的关键技术之一，针对这些要求提出了一种不同传统的阻容反馈式的前置放大器电路形式。     

Monolithic junction field-effect transistor charge preamplifier forcalorimetry at high luminosity hadron colliders

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based on them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described. Tests have demonstrated that the noise behavior of the preamplifier is close to that which would be expected if the total noise referred at the preamplifier input were the thermal noise in the input JFET device; that is, the monolithic circuit approaches the noise performances of a hybrid preamplifier using discrete JFETs     

基于ORCAD/PSPICE的电荷灵敏前置放大器仿真分析

使用电路仿真软件ORCAD/PSPICE,对电荷灵敏前置放大器的灵敏度、频率响应、噪声和温度效应等主要特性进行了仿真分析,仿真结果与理论结果相符合.这为分析、优化前置放大器的性能提供了一种便捷可靠的方法.     

An HEMT input charge preamplifier for nanoseconds signal processingtime

The capabilities of the high electron mobility transistor (HEMT) as front end device in charge preamplifiers for radiation detectors have been experimentally tested. We present the design and performance of a fast low-noise charge preamplifier having an HEMT as input transistor. An equivalent noise charge of 139 rms electrons, i.e., 1.13 keV FWHM in silicon detectors, has been measured at room temperature with 10 ns RC-CR shaping and 1 pF input capacitance     

Integrated low-noise low-power fast charge-sensitive preamplifierfor avalanche photodiodes in JFET-CMOS technology

To take advantage of the compactness of avalanche photodiode (APD) arrays, low-noise power-efficient fast charge-sensitive preamplifier chips with differential current drivers have been developed. A 16-channel and a single-channel version are available. The chips were adapted for low-capacitance 4×8 APD arrays produced by Hamamatsu, Japan. A mixed junction field-effect transistor (JFET)-CMOS production process yielded high-quality integrated JFETs for the input stage of the amplifier's folded cascade. Thus, the 1/f-noise corner is kept at 4 kHz. The JFET has a transconductance of 11 mS at a drain current of 3 mA. The serial noise of the input transistor was found to be 0.8 nV/√(Hz). The signal rise time of the driver outputs is 20 ns. The rms noise of the preamplifier was found to be 480 e^- with a 25 e^- /pF noise slope for a shaping time of 50 ns. The serial input noise of the preamplifier is about 1.4 nV/√(Hz) from 200 kHz up to 40 MHz, and the 1/f-noise corner is at 70 kHz. The power consumption is 30 mW per preamplifier, including the differential driver. The linearity is better than 1.3% over 48 dB dynamic range. For the 16-channel chip, the channel-to-channel gain variation is less than 3.5%. Performance similar to photomultiplier tubes can be achieved with APDs in combination with this integrated preamplifier chip     

A low-noise current-sensitive preamplifier for X-ray computed tomography with applying a charge-sensitive preamplifier

ABSTRACT

A low-noise current-sensitive preamplifier was developed for aiming low-dose X-ray computed tomography with applying a charge-sensitive preamplifier. We compared the number of X-ray photons needed for current measurement with the new preamplifier with that needed with a conventional preamplifier. Also, the dose rates for above conditions were measured by a commercial dose rate meter. Results show that the new preamplifier reduced the number of X-ray photons needed by two orders of magnitude compared with the conventional one.     

Signal Coupling from a Semiconductor Detector to a Cold Resistance Preamplifier Through a Cable or a Delay - Line Transformer

The behavior of a charge-sensitive preamplifier exhibiting a stabilized cold resistance at the input port is analyzed in view of its application as a low-noise termination for a cable or a delay-line transformer. Its use in conjuction with a remote semiconductor detector of large capacitance is discussed. Results obtained with different values of cable length, detector capacitance and shaping time constants are given. It is concluded that such a preamplifier can be successfully employed in several circumstances associated with silicon live targets in high-energy experiments.     

Multisim仿真软件在分析电荷灵敏前置放大器中的应用

利用电子电路仿真设计软件Multisim对核电子学中的典型电路电荷灵敏前置放大器进行了仿真测试。在结合理论分析的基础上,仿真分析了前放的一些基本特性如输出增益、输出脉冲上升时间、噪声、输入输出阻抗和带宽等,得出了与理论分析相符合的结果,对理论分析有较大的帮助和参考价值。     

A Generalized Analysis of Zero Cross over Timing Systems for Semiconductor Detectors

A generalized analysis of zero cross-over timing systems is developed and applied to the case of germanium planar detectors to determine operating parameters which give smallest timing dispersion under the constraints of available charge-sensitive preamplifier risetimes. Charts are given using normalized values to indicate these parameters. The conclusions are verified by experimental results published elsewhere.